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1. 发明申请

US20200088860A1 COHERENT FMCW LIDAR SYSTEM 审中-公开
公开(公告)号：US20200088860A1
公开(公告)日：2020-03-19
申请号：US16618688
申请日：2019-04-29
申请人： Hyun-Ju PARK , INFOWORKS INC.
发明人： Hyun-Ju PARK
IPC分类号： G01S7/4911 , G01S7/4912 , G01S17/89 , G01S7/481 , G01S17/36
摘要： The present invention relates to a coherent frequency modulated continuous wave (FMCW) lidar system, and more particularly, to a coherent FMCW lidar system including: a lidar sensor unit configured to generate an amplified laser by interfering a first FMCW laser, which is reference light, and a second FMCW laser, which is transmitted over sea and reflected, in a coherent scheme, and detect a marine object information signal from the amplified laser; a control unit (200) configured to process the marine object information signal received from the lidar sensor unit (100) into an image; and a housing unit (10) configured to house the lidar sensor unit (100) and the control unit (200).

2. 发明授权

US07727787B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07727787B2
公开(公告)日：2010-06-01
申请号：US11976791
申请日：2007-10-29
申请人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L21/304
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

3. 发明申请

US20100313490A1 DOME TYPE STRUCTURE 审中-公开
标题翻译： DOME型结构
公开(公告)号：US20100313490A1
公开(公告)日：2010-12-16
申请号：US12521419
申请日：2007-12-17
申请人： Hyun Ju Park , Sa Jin Hong , Seung Jun Moon , Up Kim
发明人： Hyun Ju Park , Sa Jin Hong , Seung Jun Moon , Up Kim
IPC分类号： E04B7/08 , E04B1/32
CPC分类号： E04B1/3205 , E04B1/3211 , E04B2001/3276
摘要： Disclosed is a dome type structure induing main wall parts (10), forming four walls and a portion of a ceiling, each of which is provided with a lower end fixed to or buried under the ground in each of four directions and an upper end bent in a dome shape toward the center of the upper portion of the structure such that both edges of the upper ends of the neighboring main wall parts contact each other; corner wall parts (20) disposed at four corners of the structure between the neighboring main wall parts (10), and thus forming dome type corners; and a central ceiling part (30) closing a hole formed at the ceiling by connecting the main wall parts (10) such that the central ceiling part contacts the upper surfaces of the main wall parts (10), thereby being simply and rapidly assembled and disassembled.
摘要翻译：公开了一种引导主壁部分（10）的圆顶型结构，其形成四个壁和一部分天花板，每个天花板在四个方向中的每一个上设置有固定到或埋在地下的下端，并且上端弯曲朝向结构的上部的中心的圆顶形状，使得相邻主壁部分的上端的两个边缘彼此接触; 设置在相邻的主壁部（10）之间的结构的四个角处的角壁部（20），从而形成圆顶型的角部; 以及中央顶板部（30），其通过连接所述主壁部（10）而封闭形成在所述天花板处的孔，使得所述中心顶部与所述主壁部（10）的上表面接触，从而被简单且快速地组装，拆卸

4. 发明授权

US07571400B2 Chip design verifying and chip testing apparatus and method 失效
标题翻译：芯片设计验证和芯片测试仪器及方法
公开(公告)号：US07571400B2
公开(公告)日：2009-08-04
申请号：US11619334
申请日：2007-01-03
申请人： Hyun-Ju Park , Dong-goo Yun
发明人： Hyun-Ju Park , Dong-goo Yun
IPC分类号： G06F17/50
CPC分类号： G01R31/318357 , G01R31/3187 , G06F11/261 , G06F17/5022
摘要： A chip design verifying and chip testing apparatus includes a storing means for storing an application program verifying an operation of a designed chip and testing a manufactured chip having a plurality of blocks, an I/O file, and a test vector; an interface means controlling a data transmission between the storing means and the chip, and having a data applying means for applying the I/O file and/or the test vector outputted from the storing means and a data storing means for storing data outputted from the chip; and a computer including a CPU for performing and controlling the application program.
摘要翻译：芯片设计验证芯片测试装置包括存储装置，用于存储验证设计芯片的操作的应用程序，并测试具有多个块的制造芯片，I / O文件和测试矢量; 接口装置，控制存储装置和芯片之间的数据传输，并具有用于应用从存储装置输出的I / O文件和/或测试矢量的数据应用装置和用于存储从存储装置输出的数据的数据存储装置芯片; 以及包括用于执行和控制应用程序的CPU的计算机。

5. 发明申请

US20080105889A1 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20080105889A1
公开(公告)日：2008-05-08
申请号：US11976791
申请日：2007-10-29
申请人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

6. 发明授权

US6142020A Pressure and temperature sensor assembly for internal combustion engines 失效
标题翻译：用于内燃机的压力和温度传感器组件
公开(公告)号：US6142020A
公开(公告)日：2000-11-07
申请号：US101163
申请日：1998-07-02
申请人： Joo-Young Kim , Hyun-Ju Park , Sang-Jo Lee , Tae-Wook Park , Dae-Hyun Yu
发明人： Joo-Young Kim , Hyun-Ju Park , Sang-Jo Lee , Tae-Wook Park , Dae-Hyun Yu
IPC分类号： F02B77/08 , G01L9/00 , G01L19/00 , G01M15/00
CPC分类号： G01L19/0084 , F02B77/08 , G01L19/0092 , G01L19/143
摘要： A pressure and temperature sensor assembly for internal combustion engines is disclosed. The sensor assembly is formed by integrating a temperature sensor part with a conventional MAP sensor into a single structure. In the temperature sensor part, a temperature sensing rod (23) is formed by partially extending downward the bottom case (7) of a MAP sensor at a portion around the lower end of a pressure inlet port (9) of the bottom case (7). A temperature sensor chip (24) is interiorly installed in the temperature sensing rod (23) and is electrically connected to the connection terminals of the top case (1). The sensor assembly is commonly used for sensing both the internal pressure and inlet air temperature of a cylinder.
摘要翻译： PCT No.PCT / KR97 / 00208 Sec。 371日期：1998年7月2日 102（e）1998年7月2日PCT 1997年10月30日PCT公布。公开号WO98 / 20249 日期1998年5月14日公开了用于内燃机的压力和温度传感器组件。传感器组件通过将温度传感器部件与常规MAP传感器组合成单个结构而形成。在温度传感器部分中，通过在底壳（7）的压力入口（9）的下端周围的部分向下部分地向下延伸MAP传感器的底壳（7）而形成温度感测杆（23））。温度传感器芯片（24）内部安装在温度检测棒（23）中并电连接到顶壳（1）的连接端子。传感器组件通常用于检测气缸的内部压力和进气温度。

7. 发明授权

US5680065A Small computer system interface bus driving circuit with unique enable circuitry 失效
标题翻译：具有独特使能电路的小型计算机系统接口总线驱动电路
公开(公告)号：US5680065A
公开(公告)日：1997-10-21
申请号：US545966
申请日：1995-10-20
申请人： Hyun Ju Park
发明人： Hyun Ju Park
IPC分类号： G06F3/00 , G06F13/40 , H03K19/017 , H03K19/0175 , H04L25/02
CPC分类号： H04L25/028 , H03K19/01728 , H03K19/017545 , H04L25/029 , H04L25/0292
摘要： An improved SCSI bus driving circuit is capable of speedily transmitting a data irrespective of the length of a small computer system interface bus cable or the number of targets connected to a host computer. The circuit includes an output buffer for buffering the output signal of a data output terminal of a host computer; and an enabling circuit for detecting the output signal of the output buffer using a logic threshold voltage of a logic gate and logically combining the signal detected and the output signal of a mode selection terminal outputted from the host computer.
摘要翻译：改进的SCSI总线驱动电路能够快速地发送数据，而与小型计算机系统接口总线电缆的长度或连接到主计算机的目标数量无关。电路包括用于缓冲主计算机的数据输出端的输出信号的输出缓冲器; 以及启用电路，用于使用逻辑门的逻辑门限电压检测输出缓冲器的输出信号，并逻辑地组合从主计算机输出的模式选择终端的检测信号和输出信号。

8. 发明授权

US07803796B2 Homopiperazine compounds that inhibit ribosomal frameshifting by binding to RNA pseudoknot structure of SARS coronavirus 有权
标题翻译：通过结合SARS冠状病毒的RNA假结构结构抑制核糖体移码的高哌嗪化合物
公开(公告)号：US07803796B2
公开(公告)日：2010-09-28
申请号：US11961781
申请日：2007-12-20
申请人： Hyun-Ju Park , So-Jung Park , Yang-Gyun Kim
发明人： Hyun-Ju Park , So-Jung Park , Yang-Gyun Kim
IPC分类号： A61K31/426 , A61K31/381 , A61K31/215
CPC分类号： A61K31/551
摘要： Provided is a homopiperazine compound for inhibiting ribosomal frameshifting by binding to an RNA pseudoknot structure of SARS coronavirus. Particularly, the present invention provides a pharmaceutical composition for inhibiting synthesis of protein induced by −1 frameshifting by binding to an RNA pseudoknot structure specifically existing in SARS coronavirus. The composition includes a therapeutically effective amount of homopiperazine compound of following chemical formula 1 or a pharmaceutically accepted salt thereof, and a pharmaceutically accepted carrier or excipient.
摘要翻译：提供了通过结合SARS冠状病毒的RNA假结构结构来抑制核糖体移码的高哌嗪化合物。特别地，本发明提供了通过与特异性存在于SARS冠状病毒中的RNA假结构结构结合来抑制由-1位移移导致的蛋白质合成的药物组合物。该组合物包括治疗有效量的以下化学式1的高哌嗪化合物或其药学上可接受的盐，以及药学上可接受的载体或赋形剂。

9. 发明申请

US20100193823A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20100193823A1
公开(公告)日：2010-08-05
申请号：US12756528
申请日：2010-04-08
申请人： Tae Jun KIM , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun KIM , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L33/44
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

10. 发明申请

US20080207597A1 HOMOPIPERAZINE COMPOUNDS THAT INHIBIT RIBOSOMAL FRAMESHIFTING BY BINDING TO RNA PSEUDOKNOT STRUCTURE OF SARS CORONAVIRUS 有权
标题翻译：通过结合阻断非洲沙门氏菌的RNA PSEUDOKNOT结构抑制RIBOSOMAL FRAMESHIFTING的HOMOPIPERAZINE化合物
公开(公告)号：US20080207597A1
公开(公告)日：2008-08-28
申请号：US11961781
申请日：2007-12-20
申请人： Hyun-Ju PARK , So-Jung PARK , Yang-Gyun KIM
发明人： Hyun-Ju PARK , So-Jung PARK , Yang-Gyun KIM
IPC分类号： A61K31/551 , A61P31/12
CPC分类号： A61K31/551
摘要： Provided is a homopiperazine compound for inhibiting ribosomal frameshifting by binding to an RNA pseudoknot structure of SARS coronavirus. Particularly, the present invention provides a pharmaceutical composition for inhibiting synthesis of protein induced by −1 frameshifting by binding to an RNA pseudoknot structure specifically existing in SARS coronavirus. The composition includes a therapeutically effective amount of homopiperazine compound of following chemical formula 1 or a pharmaceutically accepted salt thereof, and a pharmaceutically accepted carrier or excipient.
摘要翻译：提供了通过结合SARS冠状病毒的RNA假结构结构来抑制核糖体移码的高哌嗪化合物。特别地，本发明提供了通过与特异性存在于SARS冠状病毒中的RNA假结构结构结合来抑制由-1位移移导致的蛋白质合成的药物组合物。该组合物包括治疗有效量的以下化学式1的高哌嗪化合物或其药学上可接受的盐，以及药学上可接受的载体或赋形剂。

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