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1. 发明申请

WO2010024633A3 CONNECTOR HAVING CONNECTION PORTION WITH CONCAVO-CONVEX STRUCTURE AND METHOD FOR COUPLING CONNECTOR TO BUNDLE-TYPE BRAIDED SHIELD 审中-公开
标题翻译：具有连接部分和锥形凸起结构的连接器以及用于将连接器连接到束形编织屏蔽上的方法
公开(公告)号：WO2010024633A3
公开(公告)日：2010-06-24
申请号：PCT/KR2009004859
申请日：2009-08-31
申请人： LS CABLE LTD , YOON SEUNG-HOON , LEE BONG-YI , PARK KYUNG-HOON
发明人： YOON SEUNG-HOON , LEE BONG-YI , PARK KYUNG-HOON
IPC分类号： H01R4/22
CPC分类号： H01R9/034 , H01R13/6592 , H01R2201/26
摘要： A connector includes at least two concave lines formed along a circumferential direction in an outer periphery of a metal shield shell, and a shrink band installed to cover a bundle-type braided shield that covers the concave lines. The shrink band is compressed toward the concave lines due to an external force and thus deformed to match with the shape of the concave lines, thereby coupling the bundle-type braided shield to the metal shield shell.
摘要翻译：连接器包括沿着金属屏蔽外壳的外周中的圆周方向形成的至少两条凹线，以及安装为覆盖覆盖凹线的束型编织屏蔽的收缩带。收缩带由于外力而被压向凹线并因此变形以匹配凹线的形状，由此将束型编织屏蔽件耦合到金属屏蔽壳。

2. 发明申请

WO2010024633A2 CONNECTOR HAVING CONNECTION PORTION WITH CONCAVO-CONVEX STRUCTURE AND METHOD FOR COUPLING CONNECTOR TO BUNDLE-TYPE BRAIDED SHIELD 审中-公开
标题翻译：具有连接结构的连接器和CONVO-CONVEX结构以及用于将连接器连接到防爆型屏蔽的方法
公开(公告)号：WO2010024633A2
公开(公告)日：2010-03-04
申请号：PCT/KR2009/004859
申请日：2009-08-31
申请人： LS CABLE LTD. , YOON, Seung-Hoon , LEE, Bong-Yi , PARK, Kyung-Hoon
发明人： YOON, Seung-Hoon , LEE, Bong-Yi , PARK, Kyung-Hoon
IPC分类号： H01R4/22
CPC分类号： H01R9/034 , H01R13/6592 , H01R2201/26
摘要： A connector includes at least two concave lines formed along a circumferential direction in an outer periphery of a metal shield shell, and a shrink band installed to cover a bundle-type braided shield that covers the concave lines. The shrink band is compressed toward the concave lines due to an external force and thus deformed to match with the shape of the concave lines, thereby coupling the bundle-type braided shield to the metal shield shell.
摘要翻译：连接器包括在金属屏蔽壳的外周沿圆周方向形成的至少两个凹线，以及安装成覆盖覆盖凹线的束型编织屏蔽的收缩带。收缩带由于外力而朝向凹线压缩，因此变形以与凹线的形状匹配，从而将束型编织屏蔽件耦合到金属屏蔽壳体。

3. 发明申请

US20060273332A1 Nitride semiconductor light emitting device 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20060273332A1
公开(公告)日：2006-12-07
申请号：US11435892
申请日：2006-05-18
申请人： Pil Kang , Dong Jeon , Bong Yi , Tae Jang
发明人： Pil Kang , Dong Jeon , Bong Yi , Tae Jang
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： The present invention relates to a nitride semiconductor light emitting device. The nitride semiconductor light emitting device includes a substrate; an n-type nitride semiconductor layer that is formed on the substrate; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; a transparent electrode that is formed on the p-type nitride semiconductor layer; a p-type bonding electrode that is formed to be connected on the transparent electrode; and an n-type electrode that is formed of a compound containing aluminum or silver and is formed on the n-type nitride semiconductor layer.
摘要翻译：本发明涉及一种氮化物半导体发光器件。氮化物半导体发光器件包括衬底; 形成在所述基板上的n型氮化物半导体层; 形成在n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成为连接在透明电极上的p型接合电极; 以及由含有铝或银的化合物形成并形成在n型氮化物半导体层上的n型电极。

4. 发明申请

US20060231854A1 Flip chip type nitride semiconductor light emitting device 有权
标题翻译：倒装芯片型氮化物半导体发光器件
公开(公告)号：US20060231854A1
公开(公告)日：2006-10-19
申请号：US11319343
申请日：2005-12-28
申请人： Seung Chae , Suk Yoon , Kun Ko , Hyun Shim , Bong Yi
发明人： Seung Chae , Suk Yoon , Kun Ko , Hyun Shim , Bong Yi
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42
摘要： The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.
摘要翻译：本发明涉及具有p型和n型氮化物半导体层的倒装芯片型氮化物半导体发光器件及其间的有源层。本发明还具有形成在p型氮化物半导体层上的欧姆接触层，形成在欧姆接触层上的透光性导电氧化物层和形成在透光性导电氧化物层上的高反射金属层。

5. 发明申请

US20060054909A1 Light emitting diode improved in luminous efficiency 审中-公开
标题翻译：发光二极管的发光效率提高
公开(公告)号：US20060054909A1
公开(公告)日：2006-03-16
申请号：US10993371
申请日：2004-11-22
申请人： Hyoun Shin , Bong Yi , Jae Ro , In Pyeon
发明人： Hyoun Shin , Bong Yi , Jae Ro , In Pyeon
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： The present invention relates to an LED, in which an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer and a p-electrode are formed in their order on a sapphire substrate. A high reflectivity material layer containing Cu and Si is deposited on a remaining partial region of the n-doped semiconductor layer. An n-electrode is formed on the high reflectivity material layer. The high reflectivity material layer formed between the n-electrode and the partial region of the underlying n-doped semiconductor layer can reflect light toward a substrate, thereby improving the luminous efficiency of the LED.
摘要翻译：本发明涉及一种LED，其中在蓝宝石衬底上依次形成n掺杂半导体层，有源层，p掺杂半导体层和p电极。包含Cu和Si的高反射率材料层沉积在n掺杂半导体层的剩余部分区域上。在高反射率材料层上形成n电极。形成在n电极和下面的n掺杂半导体层的部分区域之间的高反射率材料层可以将光朝向衬底反射，从而提高LED的发光效率。

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