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    • 3. 发明申请
    • Nitride-based semiconductor light emitting diode
    • 氮化物半导体发光二极管
    • US20070096115A1
    • 2007-05-03
    • US11581757
    • 2006-10-17
    • Hyuk LeeIn PyeonHyun-Ju ParkHyun KimDong KimHyoun Shin
    • Hyuk LeeIn PyeonHyun-Ju ParkHyun KimDong KimHyoun Shin
    • H01L33/00H01L31/12H01L27/15H01L29/26
    • H01L33/38H01L33/20H01L33/32
    • A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a current spreading layer formed on the p-type nitride semiconductor layer; a p-electrode formed on the current spreading layer, the p-electrode having two p-type branch electrodes; and an n-electrode formed on the n-type nitride semiconductor layer on which the active layer is not formed, the n-electrode having one n-type branch electrode. The n-type branch electrode is formed so as to be inserted between two of the p-type branch electrodes, and a distance from the outermost side of a transparent electrode adjacent to the n-electrode to the p-electrode is identical at any position.
    • 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的电流扩散层; 形成在电流扩散层上的p电极,p电极具有两个p型分支电极; 以及形成在其上未形成有源层的n型氮化物半导体层上的n电极,n电极具有一个n型分支电极。 n型分支电极被形成为插入在两个p型分支电极之间,并且从与n电极相邻的透明电极的最外侧到p电极的距离在任何位置是相同的 。
    • 5. 发明申请
    • Nitride semiconductor light emitting device
    • 氮化物半导体发光器件
    • US20060220043A1
    • 2006-10-05
    • US11328196
    • 2006-01-10
    • Hyun KimHyoun ShinHyuk LeeIn PyeonChang Kim
    • Hyun KimHyoun ShinHyuk LeeIn PyeonChang Kim
    • H01L33/00
    • H01L33/38H01L33/20
    • The present invention relates to a nitride semiconductor light emitting device having a rectangular top view in which n-electrode and p-electrode structure is appropriately formed to improve propagation of currents and enhance luminance. The light emitting device includes an n-type nitride semiconductor layer formed on a substrate, and an n-electrode including an n-side bonding pad and a finger-type n-electrode extending away from the n-side bonding pad. The device further includes a mesa structure including an active layer and a p-type nitride semiconductor layer deposited in their order, an ohmic contact layer formed on a substantially entire upper surface of the mesa structure, and a p-electrode including a p-side bonding pad and a finger-type p-electrode extending away from the p-side bonding pad.
    • 本发明涉及一种具有矩形顶视图的氮化物半导体发光器件,其中适当地形成n电极和p电极结构以改善电流的传播和增强亮度。 发光器件包括形成在衬底上的n型氮化物半导体层,以及包括n侧接合焊盘和从n侧焊盘延伸的手指型n电极的n电极。 该器件还包括台阶结构,其包括依次沉积的有源层和p型氮化物半导体层,形成在台面结构的大致整个上表面上的欧姆接触层和包括p侧的p型 接合焊盘和远离p侧接合焊盘延伸的手指型p电极。