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1. 发明授权

US06800499B2 Process for preparing a hydrogen sensor 有权
标题翻译：氢传感器的制备方法
公开(公告)号：US06800499B2
公开(公告)日：2004-10-05
申请号：US10157251
申请日：2002-05-28
申请人： Huey-Ing Chen , Wen-Chau Liu , Yen-I Chou , Chin-Yi Chu , Hsi-Jen Pan
发明人： Huey-Ing Chen , Wen-Chau Liu , Yen-I Chou , Chin-Yi Chu , Hsi-Jen Pan
IPC分类号： H01L2100
CPC分类号： G01N33/005 , H01L21/28581
摘要： A high-sensitivity Pd/InP hydrogen sensor was made by a) forming an n-type or p-type semiconductor film on a semiconductor substrate; b) forming a patterned first metal electrode on the semiconductor film, wherein the first metal electrode forms an Ohmic contact with the semiconductor film; and c) forming a second metal electrode on the semiconductor film, the second metal electrode being isolated from the first metal electrode, wherein the second metal electrode forms a Schottky contact with the semiconductor film, wherein a thickness of the second metal electrode and a material of which the second metal electrode is made enable a Schottky barrier height of the Schottky contact to decrease when hydrogen contacts the second metal electrode. The second metal electrode can be physical vapor deposited or electroless plated.
摘要翻译：通过a）在半导体衬底上形成n型或p型半导体膜来制造高灵敏度Pd / InP氢传感器; b）在所述半导体膜上形成图案化的第一金属电极，其中所述第一金属电极与所述半导体膜形成欧姆接触; 以及c）在所述半导体膜上形成第二金属电极，所述第二金属电极与所述第一金属电极隔离，其中所述第二金属电极与所述半导体膜形成肖特基接触，其中所述第二金属电极和材料的厚度其中第二金属电极被制成使得当氢接触第二金属电极时，肖特基接触的肖特基势垒高度降低。第二金属电极可以物理气相沉积或化学镀。

2. 发明授权

US08330169B2 Multi-gas sensor and method of fabricating the sensor 有权
标题翻译：多气体传感器和制造传感器的方法
公开(公告)号：US08330169B2
公开(公告)日：2012-12-11
申请号：US13177551
申请日：2011-07-06
申请人： Wen-Chau Liu , Huey-Ing Chen , Tsung-Han Tsai , Tai-You Chen , Chung-Fu Chang , Chi-Hsiang Hsu
发明人： Wen-Chau Liu , Huey-Ing Chen , Tsung-Han Tsai , Tai-You Chen , Chung-Fu Chang , Chi-Hsiang Hsu
IPC分类号： H01L29/66
CPC分类号： G01N27/125
摘要： The present invention is a multi-gas sensor and a method for fabricating the multi-gas sensor.The multi-gas sensor comprises a substrate, an epitaxial layer, a metal oxide layer, a first metal layer, a second metal layer and multiple third metal layers.The method for fabricating the multi-gas sensor comprises steps of forming an epitaxial layer on a substrate; etching the epitaxial layer to form a first epitaxial structure and a second epitaxial structure a fixed distance from the first epitaxial structure; forming a metal oxide layer on the first epitaxial structure; forming a first metal layer that has at least two metal layers on the second epitaxial structure; forming a second metal layer a fixed distance from the first metal layer on the second epitaxial structure; forming third metal layers respectively on the metal oxide layer, the first metal layer and the second metal layer.
摘要翻译：本发明是一种多气体传感器和多气体传感器的制造方法。多气体传感器包括衬底，外延层，金属氧化物层，第一金属层，第二金属层和多个第三金属层。制造多气体传感器的方法包括在基板上形成外延层的步骤; 蚀刻所述外延层以形成与所述第一外延结构固定距离的第一外延结构和第二外延结构; 在所述第一外延结构上形成金属氧化物层; 在所述第二外延结构上形成具有至少两个金属层的第一金属层; 在所述第二外延结构上形成与所述第一金属层固定距离的第二金属层; 在金属氧化物层，第一金属层和第二金属层上分别形成第三金属层。

3. 发明申请

US20110284931A1 transistor device and manufacture method 审中-公开
标题翻译：晶体管器件及制造方法
公开(公告)号：US20110284931A1
公开(公告)日：2011-11-24
申请号：US13112804
申请日：2011-05-20
申请人： Wen-Chau Liu , Huey-Ing Chen , Li-Yang Chen , Chien-Chang Huang
发明人： Wen-Chau Liu , Huey-Ing Chen , Li-Yang Chen , Chien-Chang Huang
IPC分类号： H01L29/772 , H01L21/338
CPC分类号： H01L29/475 , H01L29/2003 , H01L29/452 , H01L29/66462 , H01L29/66863 , H01L29/7787
摘要： A transistor device sequentially comprises a semiconductor substrate, a drain, a source, a gate metal seed layer and a gate Schottky contact. The gate metal seed layer comprises a gelatinous substance layer and multiple metal seed crystals. A manufacture method comprises steps of providing a semiconductor substrate; forming a drain and a source; forming a patterned photoresist layer with a photolithography to define a gate area on the semiconductor substrate; forming a gate metal seed layer on the semiconductor substrate with a sensitization process and an activation process; and forming a gate Schottky contact on the gate metal seed layer with an electroless plating approach.
摘要翻译：晶体管器件依次包括半导体衬底，漏极，源极，栅极金属晶种层和栅极肖特基接触。栅极金属种子层包含凝胶状物质层和多种金属晶种。一种制造方法，包括提供半导体衬底的步骤; 形成排水和源; 通过光刻法形成图案化的光致抗蚀剂层以限定半导体衬底上的栅极区域; 在所述半导体衬底上形成具有致敏过程和激活过程的栅极金属种子层; 以及通过化学镀方法在栅极金属籽晶层上形成栅极肖特基接触。

4. 发明授权

US06969900B2 Semiconductor diode capable of detecting hydrogen at high temperatures 失效
标题翻译：能够在高温下检测氢的半导体二极管
公开(公告)号：US06969900B2
公开(公告)日：2005-11-29
申请号：US10797863
申请日：2004-03-10
申请人： Wen-Chau Liu , Huey-Ing Chen , Kun-Wei Lin , Chun-Tsen Lu
发明人： Wen-Chau Liu , Huey-Ing Chen , Kun-Wei Lin , Chun-Tsen Lu
IPC分类号： G01N27/00 , G01N33/00
CPC分类号： G01N33/005
摘要： A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element different from X, and Z is a Group V element, a semiconductor contact-enhancing layer formed on the active layer and made from a compound having the formula MN, in which M is a Group III element, and N is a Group V element, an ohmic contact layer formed on the semiconductor contact-enhancing layer, and a Schottky barrier contact layer formed on the active layer. The Schottky barrier contact layer is made from a metal that is capable of dissociating a hydrogen molecule into hydrogen atoms.
摘要翻译：具有氢检测能力的半导体二极管包括半导体衬底，形成在衬底上并由具有式XYZ的化合物制成的掺杂半导体有源层，其中X是III族元素，Y是与X不同的另一III族元素， Z是V族元素，形成在有源层上并由具有式MN的化合物制成的半导体接触增强层，其中M是III族元素，N是V族元素，欧姆接触层形成在半导体接触增强层上的肖特基势垒接触层，形成在有源层上的肖特基势垒接触层。肖特基势垒接触层由能够将氢分子解离成氢原子的金属制成。

5. 发明授权

US6160278A Hydrogen-sensitive palladium (PD) membrane/semiconductor schottky diode sensor 有权
标题翻译：氢敏钯（PD）膜/半导体肖特基二极管传感器
公开(公告)号：US6160278A
公开(公告)日：2000-12-12
申请号：US321535
申请日：1999-05-28
申请人： Wen-Chau Liu , Huey-Ing Chen , Shiou-Ying Cheng
发明人： Wen-Chau Liu , Huey-Ing Chen , Shiou-Ying Cheng
IPC分类号： G01N27/00 , H01L29/872 , H01L23/58
CPC分类号： G01N33/005 , H01L29/872
摘要： In this invention, a new, simple and small-size hydrogen-sensitive palladium (Pd) membrane/semiconductor Schottky diode sensor has been developed and fabricated. First, a high quality undoped GaAs buffer layer and an n-type GaAs epitaxial layer with the carrier concentration of 2.times.10.sup.17 cm.sup.31 3 is grown by molecular beam epitaxy (MBE) on a semi-insulated GaAs substrate. Then a thin Pd membrane is evaporated on the surface of the n-type GaAs epitaxial layer by the vacuum evaporation technique. It is well-known that palladium metal has excellent selectivity and sensitivity on hydrogen gas. When hydrogen gas diffuses to the Pd membrane surface, the hydrogen molecules will dissociate into hydrogen atoms. Some of the hydrogen atoms diffuse through the thin metal layer and form the palladium hydride near the metal-semiconductor interface. The hydride may effectively lower the work function of Pd metal. The lowering of work function results in the reduction of Schottky barrier height at the Pd metal-GaAs semiconductor interface and the modification in the measured current-voltage characteristics of the studied device. Experimental results reveal that, during the hydride formation process, the forward- and reverse-biased currents are increased by the increase of hydrogen concentration. It also demonstrates that the Schottky barrier height is indeed decreased with increasing the hydrogen concentration. Therefore, the studied device can be used in fabricating a high-performance hydrogen-sensitive sensor.
摘要翻译：在本发明中，开发并制造了新的简单和小尺寸的氢敏感钯（Pd）膜/半导体肖特基二极管传感器。首先，通过半绝缘GaAs衬底上的分子束外延（MBE）生长载流子浓度为2×10 17 cm -3 3的高质量未掺杂的GaAs缓冲层和n型GaAs外延层。然后通过真空蒸发技术在n型GaAs外延层的表面上蒸发薄的Pd膜。众所周知，钯金属对氢气具有优异的选择性和灵敏度。当氢气扩散到Pd膜表面时，氢分子将解离成氢原子。一些氢原子通过薄金属层扩散并在金属 - 半导体界面附近形成钯氢化物。氢化物可有效降低Pd金属的功能。工作功能的降低导致Pd金属 - GaAs半导体界面处的肖特基势垒高度的降低以及所研究器件的测量电流 - 电压特性的改变。实验结果表明，在氢化物形成过程中，正向和反向偏置电流由于氢浓度的增加而增加。这也表明肖特基势垒高度确实随着氢浓度的增加而降低。因此，研究的器件可用于制造高性能氢敏感测器。

6. 发明授权

US06293137B1 Hydrogen sensor 有权
标题翻译：氢传感器
公开(公告)号：US06293137B1
公开(公告)日：2001-09-25
申请号：US09564742
申请日：2000-05-04
申请人： Wen-Chau Liu , Huey-lng Chen , Hsi-Jen Pan
发明人： Wen-Chau Liu , Huey-lng Chen , Hsi-Jen Pan
IPC分类号： G01N700
CPC分类号： G01N33/005 , H01L21/28581
摘要： In this invention, we propose a high-sensitivity Pd/InP hydrogen sensor. First, a n-type InP semiconductor membrane is grown on a semi-insulating InP substrate. The concentration and thickness of this membrane are 2×1017cm−3 and 3000 Å, respectively. Then, Pd metal and AuGe alloy are evaporated on the surface of the membrane as the anode and cathode electrodes, respectively. Due to the catalytic performance of Pd metal, the adsorbed hydrogen molecules on the surface of the Pd metal are dissociated into hydrogen atoms. The hydrogen atoms diffuse and pass through the Pd metal and form a dipole layer at the interface between the Pd metal and the n-type InP membrane. This dipole layer will decrease the depletion width of the n-type InP membrane and further lower the metal-semiconductor Schottky barrier height. Therefore, the current-voltage (I-V) characteristics will be modulated after the introduction of hydrogen gas.
摘要翻译：在本发明中，我们提出了一种高灵敏度Pd / InP氢传感器。首先，在半绝缘InP衬底上生长n型InP半导体膜。该膜的浓度和厚度分别为2x1017cm-3和3000。然后，分别在膜的表面上分别蒸镀Pd金属和AuGe合金作为阳极和阴极。由于Pd金属的催化性能，Pd金属表面上吸附的氢分子被解离成氢原子。氢原子扩散并通过Pd金属，并在Pd金属和n型InP膜之间的界面处形成偶极子层。该偶极子层将降低n型InP膜的耗尽宽度并进一步降低金属 - 半导体肖特基势垒高度。因此，在引入氢气之后，电流 - 电压（I-V）特性将被调制。

7. 发明申请

US20120007099A1 MULTI-GAS SENSOR AND METHOD OF FABRICATING THE SENSOR 有权
标题翻译：多气体传感器和传感器的制作方法
公开(公告)号：US20120007099A1
公开(公告)日：2012-01-12
申请号：US13177551
申请日：2011-07-06
申请人： Wen-Chau Liu , Huey-Ing Chen , Tsung-Han Tsai , Tai-You Chen , Chung-Fu Chang , Chi-Hsiang Hsu
发明人： Wen-Chau Liu , Huey-Ing Chen , Tsung-Han Tsai , Tai-You Chen , Chung-Fu Chang , Chi-Hsiang Hsu
IPC分类号： H01L29/66 , H01L21/20
CPC分类号： G01N27/125
摘要： The present invention is a multi-gas sensor and a method for fabricating the multi-gas sensor.The multi-gas sensor comprises a substrate, an epitaxial layer, a metal oxide layer, a first metal layer, a second metal layer and multiple third metal layers.The method for fabricating the multi-gas sensor comprises steps of forming an epitaxial layer on a substrate; etching the epitaxial layer to form a first epitaxial structure and a second epitaxial structure a fixed distance from the first epitaxial structure; forming a metal oxide layer on the first epitaxial structure; forming a first metal layer that has at least two metal layers on the second epitaxial structure; forming a second metal layer a fixed distance from the first metal layer on the second epitaxial structure; forming third metal layers respectively on the metal oxide layer, the first metal layer and the second metal layer.
摘要翻译：本发明是一种多气体传感器和多气体传感器的制造方法。多气体传感器包括衬底，外延层，金属氧化物层，第一金属层，第二金属层和多个第三金属层。制造多气体传感器的方法包括在基板上形成外延层的步骤; 蚀刻所述外延层以形成与所述第一外延结构固定距离的第一外延结构和第二外延结构; 在所述第一外延结构上形成金属氧化物层; 在所述第二外延结构上形成具有至少两个金属层的第一金属层; 在所述第二外延结构上形成与所述第一金属层固定距离的第二金属层; 在金属氧化物层，第一金属层和第二金属层上分别形成第三金属层。

8. 发明申请

US20110290003A1 GAS SENSOR WITH A ZINC-OXIDE NANOSTRUCTURE AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：具有氧化锌纳米结构的气体传感器及其制造方法
公开(公告)号：US20110290003A1
公开(公告)日：2011-12-01
申请号：US13115696
申请日：2011-05-25
申请人： Wen-Chau Liu , Huey-Ing Chen , Tai-You Chen , Tsung-Han Tsai , I-Ping Liu , Chi-Hsiang Hsu
发明人： Wen-Chau Liu , Huey-Ing Chen , Tai-You Chen , Tsung-Han Tsai , I-Ping Liu , Chi-Hsiang Hsu
IPC分类号： G01N33/00 , B05D5/12 , B82Y30/00
CPC分类号： C30B7/10 , B82Y30/00 , C30B29/16 , C30B29/602 , G01N27/127
摘要： A gas sensor includes a substrate; a seed layer positioned on the substrate; a zinc-oxide nanostructure formed on the seed layer; a metal nanoparticle formed on the zinc-oxide nanostructure; a first electrode positioned on the zinc-oxide nanostructure; and a second electrode positioned on the zinc-oxide nanostructure apart from the first electrode to electrically connect to the first electrode.
摘要翻译：气体传感器包括基板; 位于所述基底上的种子层; 形成在种子层上的氧化锌纳米结构; 形成在氧化锌纳米结构上的金属纳米颗粒; 位于氧化锌纳米结构上的第一电极; 以及第二电极，其位于距离第一电极的氧化锌纳米结构上，以电连接到第一电极。

9. 发明授权

US5789771A Camel-gate field-effect transistor with multiple modulation-doped channels 失效
标题翻译：具有多个调制掺杂通道的骆驼门场效应晶体管
公开(公告)号：US5789771A
公开(公告)日：1998-08-04
申请号：US761977
申请日：1996-12-11
申请人： Wen-Chau Liu , Wen-Shiung Lour , Jung-Hui Tsai
发明人： Wen-Chau Liu , Wen-Shiung Lour , Jung-Hui Tsai
IPC分类号： H01L29/10 , H01L29/80 , H01L29/72
CPC分类号： H01L29/1066 , H01L29/1058 , H01L29/80
摘要： The invention relates to the structure of the camel-gate field-effect transistor with multiple modulation-doped channels. The device structure, from the bottom to the top in succession, includes the substrate, the buffer layer, the multiple modulation-doped channels, the thin and complete depletion layer, and the ohmic contact layer. The transistor is characterized by a camel-gate diode, which is composed of the multiple modulation-doped channels, the thin and complete depletion layer and the ohmic contact layer. The gate structure may achieve the high potential height between the gate electrode and the source electrode as well as the high breakdown voltage performance. Furthermore, the use of multiple modulation-doped channels, made of n-type GaAs materials with different thickness and doped concentration, can exhibit excellent properties of high output current, large and linear transconductances.
摘要翻译：本发明涉及具有多个调制掺杂通道的骆驼门场效应晶体管的结构。从底部到顶部的器件结构连续地包括衬底，缓冲层，多个调制掺杂沟道，薄而完整的耗尽层和欧姆接触层。晶体管的特征在于由多个调制掺杂沟道，薄而完整的耗尽层和欧姆接触层组成的骆驼栅极二极管。栅极结构可以实现栅电极和源电极之间的高电位高度以及高的击穿电压性能。此外，使用由具有不同厚度和掺杂浓度的n型GaAs材料制成的多个调制掺杂沟道可以表现出高输出电流，大的和线性跨导的优异性能。

10. 发明授权

US06197622B1 Structure of metal-insulator-semiconductor-like multiple-negative-differential-resistance device and fabrication method thereof 有权
标题翻译：金属绝缘体半导体样多负 - 差分电阻器件的结构及其制造方法
公开(公告)号：US06197622B1
公开(公告)日：2001-03-06
申请号：US09128051
申请日：1998-08-03
申请人： Wen-Chau Liu , Lih-Wen Laih
发明人： Wen-Chau Liu , Lih-Wen Laih
IPC分类号： H01L21335
CPC分类号： H01L29/8618
摘要： The present invention provides a structure of a metal-insulator-semiconductor (MIS)-like multiple-negative-differential-resistance (MNDR) device and the fabrication method thereof. The device of the present invention has the characteristics of dual-route and MNDR at low temperatures. These characteristics result from the successive barrier-lowering and potential-redistribution effect when conducting carriers fall into a quantum well. MNDR devices have excellent potential in multiple-value logic circuitry applications and are capable of reducing circuitry complexity.
摘要翻译：本发明提供金属 - 绝缘体半导体（MIS）状多负 - 差分电阻（MNDR）器件的结构及其制造方法。本发明的装置在低温下具有双路和MNDR的特点。当导电载流子落入量子阱时，这些特征是由连续的势垒降低和电位再分配效应引起的。 MNDR器件在多值逻辑电路应用中具有极好的潜力，并且能够降低电路复杂度。

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