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1. 发明授权

US6160278A Hydrogen-sensitive palladium (PD) membrane/semiconductor schottky diode sensor 有权
标题翻译：氢敏钯（PD）膜/半导体肖特基二极管传感器
公开(公告)号：US6160278A
公开(公告)日：2000-12-12
申请号：US321535
申请日：1999-05-28
申请人： Wen-Chau Liu , Huey-Ing Chen , Shiou-Ying Cheng
发明人： Wen-Chau Liu , Huey-Ing Chen , Shiou-Ying Cheng
IPC分类号： G01N27/00 , H01L29/872 , H01L23/58
CPC分类号： G01N33/005 , H01L29/872
摘要： In this invention, a new, simple and small-size hydrogen-sensitive palladium (Pd) membrane/semiconductor Schottky diode sensor has been developed and fabricated. First, a high quality undoped GaAs buffer layer and an n-type GaAs epitaxial layer with the carrier concentration of 2.times.10.sup.17 cm.sup.31 3 is grown by molecular beam epitaxy (MBE) on a semi-insulated GaAs substrate. Then a thin Pd membrane is evaporated on the surface of the n-type GaAs epitaxial layer by the vacuum evaporation technique. It is well-known that palladium metal has excellent selectivity and sensitivity on hydrogen gas. When hydrogen gas diffuses to the Pd membrane surface, the hydrogen molecules will dissociate into hydrogen atoms. Some of the hydrogen atoms diffuse through the thin metal layer and form the palladium hydride near the metal-semiconductor interface. The hydride may effectively lower the work function of Pd metal. The lowering of work function results in the reduction of Schottky barrier height at the Pd metal-GaAs semiconductor interface and the modification in the measured current-voltage characteristics of the studied device. Experimental results reveal that, during the hydride formation process, the forward- and reverse-biased currents are increased by the increase of hydrogen concentration. It also demonstrates that the Schottky barrier height is indeed decreased with increasing the hydrogen concentration. Therefore, the studied device can be used in fabricating a high-performance hydrogen-sensitive sensor.
摘要翻译：在本发明中，开发并制造了新的简单和小尺寸的氢敏感钯（Pd）膜/半导体肖特基二极管传感器。首先，通过半绝缘GaAs衬底上的分子束外延（MBE）生长载流子浓度为2×10 17 cm -3 3的高质量未掺杂的GaAs缓冲层和n型GaAs外延层。然后通过真空蒸发技术在n型GaAs外延层的表面上蒸发薄的Pd膜。众所周知，钯金属对氢气具有优异的选择性和灵敏度。当氢气扩散到Pd膜表面时，氢分子将解离成氢原子。一些氢原子通过薄金属层扩散并在金属 - 半导体界面附近形成钯氢化物。氢化物可有效降低Pd金属的功能。工作功能的降低导致Pd金属 - GaAs半导体界面处的肖特基势垒高度的降低以及所研究器件的测量电流 - 电压特性的改变。实验结果表明，在氢化物形成过程中，正向和反向偏置电流由于氢浓度的增加而增加。这也表明肖特基势垒高度确实随着氢浓度的增加而降低。因此，研究的器件可用于制造高性能氢敏感测器。

2. 发明授权

US06791126B2 Heterojunction bipolar transistor with zero conduction band discontinuity 失效
标题翻译：具有零导带不连续性的异质结双极晶体管
公开(公告)号：US06791126B2
公开(公告)日：2004-09-14
申请号：US10449941
申请日：2003-05-30
申请人： Wen-Chau Liu , Shiou-Ying Cheng
发明人： Wen-Chau Liu , Shiou-Ying Cheng
IPC分类号： H01L310328
CPC分类号： H01L29/66318 , H01L29/7371
摘要： A bipolar heterojunction transistor (HBT) includes a collector layer, a base layer formed on the collector layer, a first transition layer formed on the base layer, an emitter layer formed on the first transition layer, a second transition layer formed on the emitter layer, and an emitter cap layer formed on the second transition layer. Each of the first and second transition layers is formed of a composition that contains an element, the mole fraction of which is graded in such a manner that the conduction band of the HBT is continuous through the base layer, the first and second transition layers, the emitter layer and the emitter cap layer.
摘要翻译：双极异质结晶体管（HBT）包括集电极层，形成在集电极层上的基极层，形成在基极层上的第一过渡层，形成在第一过渡层上的发射极层，形成在发射极层上的第二过渡层以及形成在第二过渡层上的发射极帽层。第一和第二过渡层中的每一个由包含元素的组合物形成，该元素的摩尔分数以使得HBT的导带连续穿过基底层，第一和第二过渡层的方式分级，发射极层和发射极盖层。

3. 发明授权

US5828077A Long-period superlattice resonant tunneling transistor 失效
标题翻译：长周期超晶格谐振隧道晶体管
公开(公告)号：US5828077A
公开(公告)日：1998-10-27
申请号：US965659
申请日：1997-11-06
申请人： Wen-Chau Liu , Shiou-Ying Cheng
发明人： Wen-Chau Liu , Shiou-Ying Cheng
IPC分类号： H01L29/737 , H01L29/15 , H01L29/732
CPC分类号： B82Y10/00 , H01L29/7376
摘要： A new high-speed resonant tunneling device, namely, a long-period superlattice resonant tunneling transistor, is developed according to the invention. The structure of the proposed 20-period superlattice resonant tunneling transistor consists of an InP substrate, a buffer layer formed by GaInAs material on the substrate, a collector layer formed by GaInAs material on the buffer layer, a base layer formed by GaInAs material on the collector layer, an emitter layer formed by GaInAs material on the base, a 20-period superlattice resonant tunneling layer formed by AlInAs and GaInAs materials on the emitter layer, and an ohmic contact layer formed by GaInAs material on the 20-period superlattice resonant tunneling layer. Furthermore, the emitter region includes a 20-period AlInAs/GaInAs superlattice and an emitter layer. Due to the presence of an emitter-base homojunction, collector-emitter offset voltage (V.sub.CE,offset) can be reduced significantly. In addition, the valence band discontinuity (.DELTA.Ev) at the AlInAs/InGaAs heterojunction may be used as a barrier for holes injected from the base toward the emitter region. Therefore, the emitter injection efficiency and current gain can be increased. From the theoretical analysis and computer simulation, two subbands are observed in the superlattice region. Under the proper applied bias, the studied device will create n-type negative differential resistance (NDR). Consequently, the proposed device shows good promise for use in amplification, parity generator, and multiple-value logic circuit applications.
摘要翻译：根据本发明开发了一种新的高速谐振隧穿装置，即长周期超晶格谐振隧穿晶体管。所提出的20周期超晶格谐振隧穿晶体管的结构由InP衬底，衬底上的GaInAs材料形成的缓冲层，缓冲层上的GaInAs材料形成的集电极层，由GaInAs材料形成的基极层集电极层，由基底上的GaInAs材料形成的发射极层，由发射极层上的AlInAs和GaInAs材料形成的20周期超晶格谐振隧穿层，以及在20周期超晶格共振隧道上由GaInAs材料形成的欧姆接触层层。此外，发射极区域包括20周期的AlInAs / GaInAs超晶格和发射极层。由于存在发射极 - 基极同态，可以显着降低集电极 - 发射极偏移电压（VCE，偏移）。此外，AlInAs / InGaAs异质结的价带不连续性（DELTA Ev）可以用作从基极向发射极区域注入的空穴的势垒。因此，可以增加发射极注入效率和电流增益。从理论分析和计算机模拟，在超晶格区域观察到两个子带。在适当的施加偏压下，研究的器件将产生n型负差分电阻（NDR）。因此，所提出的器件在放大，奇偶校验发生器和多值逻辑电路应用中显示出良好的前景。

4. 发明授权

US06459103B1 Negative-differential-resistance heterojunction bipolar transistor with topee-shaped current-voltage characteristics 有权
标题翻译：负差动电阻异质结双极晶体管具有翘起形电流 - 电压特性
公开(公告)号：US06459103B1
公开(公告)日：2002-10-01
申请号：US09491441
申请日：2000-01-26
申请人： Wen-Chau Liu , Wei-Chou Wang , Shiou-Ying Cheng
发明人： Wen-Chau Liu , Wei-Chou Wang , Shiou-Ying Cheng
IPC分类号： H01L2973
CPC分类号： H01L29/7371
摘要： An InP/InGaAlAs heterojunction bipolar transistor with the characteristics of amplification and negative-differential-resistance phenomenon is presented in the invention. The 3-terminal current-voltage characteristics of the heterojunction bipolar transistor can be controlled by the applied base current. In the large collector current regime, the heterojunction bipolar transistor has the characteristics as similar to conventional bipolar junction transistors. However, in a small collector current regime, both the transistor active region and negative-differential-resistance loci are observed. The negative-differential-resistance phenomenon is caused by the insertion of a thin base layer and a &dgr;-doped sheet. Moreover, the use of a setback layer with a thickness of 50 Å added at the emitter-base junction can suppress the diffusion of doping impurity in the base and reduce the potential spike at emitter-base heterojunction so as to improve the confinement of holes injected from base to emitter.
摘要翻译：本发明提供具有放大特性和负差分电阻现象的InP / InGaAlAs异质结双极晶体管。异质结双极晶体管的3端电流 - 电压特性可以通过施加的基极电流来控制。在大集电极电流状态下，异质结双极晶体管具有与常规双极结型晶体管相似的特性。然而，在小的集电极电流状态下，观察到晶体管有源区和负微分电阻位点两者。负 - 差分电阻现象是由插入薄的基底层和δ-掺杂的片材引起的。此外，在发射极 - 基极结处添加厚度为Å的遏制层的使用可以抑制掺杂杂质在基极中的扩散，并减少发射极 - 基极异质结的电位尖峰，从而改善注入的空穴的限制从基地到发射。

5. 发明授权

US6118136A Superlatticed negative-differential-resistance functional transistor 失效
标题翻译：超级负差动电阻功能晶体管
公开(公告)号：US6118136A
公开(公告)日：2000-09-12
申请号：US126758
申请日：1998-07-31
申请人： Wen-Chau Liu , Shiou-Ying Cheng
发明人： Wen-Chau Liu , Shiou-Ying Cheng
IPC分类号： H01L29/08 , H01L29/737 , H01L31/072 , H01L31/0328 , H01L31/0336 , H01L31/109
CPC分类号： B82Y10/00 , H01L29/0895 , H01L29/7376
摘要： The invention is to develop a high-speed low power consumption resonant tunneling element--a superlatticed negative-differential-resistance (NDR) functional transistor. The proposed element exhibits amplification and obvious NDR phenomena simultaneously. In this element, the emitter region includes 5-period GaInAs/AlInAs super lattice resonant tunneling and emitter layers. Since the emitter--base interface is of homojunction, the collector--emitter offset voltage (V.sub.CE, offset) may be lowered down significantly. In addition, the produced infinitesimal potential (.DELTA.Ev) at GaInAs/AlInAs interface due to heterojunction in discrete valence bands may be applied as barriers to prohibit holes flow from base towards emitter. By doing so, the base current is remarkably depressed so as to elevate efficiency of emitter injection as well as current gain.
摘要翻译：本发明是开发一种高速低功耗谐振隧道元件 - 超级负差动电阻（NDR）功能晶体管。提出的元件同时展现放大和明显的NDR现象。在该元件中，发射极区域包括5周期GaInAs / AlInAs超晶格谐振隧穿和发射极层。由于发射极 - 基极接口是同相的，所以集电极 - 发射极偏移电压（VCE，偏移）可能会显着降低。此外，由于在离子价带中的异质结，在GaInAs / AlInAs界面处产生的无穷小电位（DELTA Ev）可被用作阻挡孔从基极向发射极流动的障碍。通过这样做，基极电流显着下降，以提高发射极注入的效率以及电流增益。

6. 发明授权

US6031256A Wide voltage operation regime double heterojunction bipolar transistor 有权
标题翻译：宽电压工作状态双异质结双极晶体管
公开(公告)号：US6031256A
公开(公告)日：2000-02-29
申请号：US225313
申请日：1999-01-05
申请人： Wen-Chan Liu , Shiou-Ying Cheng
发明人： Wen-Chan Liu , Shiou-Ying Cheng
IPC分类号： H01L29/737 , H01L31/0328
CPC分类号： H01L29/7371
摘要： Structure of a wide voltage operation regime double heterojunction bipolar transistor, specifically a modified InGaP/GaAs double heterojunction bipolar transistor featuring a very broad collector-emitter voltage operation range, an invention of high speed, low power consumption and high breakdown voltage rated microwave power transistor. Unique in the incorporation of In.sub.0.49 Ga.sub.0.51 P collector layer, GaAs delta-doping sheet and undoped GaAs spacer in the collector zone. The introduction of a spacer with a delta doping sheet into the effective base-collector heterojunction serves to eliminate potential spike from appearing at base-collector interfacing any more, thus effectively precludes electron blocking effect. In the emitter zone the inventive design comprises a five-period In.sub.0.49 Ga.sub.0.51 P/GaAs superlatticed confinement layer to GaAs emitter homojunction, with superlatticed confinement layer functioning as a containment layer for minority (hole), while the base-emitter homojunction homojunction serves to control the majority (electron) being emitted from the emitter into the base. That achieves an enhanced emitter injection efficiency and lowered offset voltage at the same time, as such, the invention transistor is very fit for application in digital as well as analogue circuits preconditioned by high speed, low power consumption, and high breakdown voltage performances.
摘要翻译：宽电压工作状态的结构双异质结双极晶体管，特别是具有非常宽的集电极 - 发射极电压工作范围的改进的InGaP / GaAs双异质结双极晶体管，本发明的高速，低功耗和高击穿电压的微波功率晶体管。在集电区内掺入In0.49Ga0.51P集电极层，GaAsδ-掺杂片和未掺杂的GaAs衬垫是独一无二的。将带有Δ掺杂片的间隔物引入到有效的基极 - 集电极异质结中用于消除在基极 - 集电极界面处出现的潜在尖峰，从而有效地排除了电子阻挡效应。在发射区中，本发明的设计包括与GaAs发射体同质结合的五周期In0.49Ga0.51P / GaAs超晶格限制层，其中超晶格限制层用作少数（空穴）的容纳层，而基极 - 发射极同相结合起作用以控制从发射器发射到基部的大部分（电子）。这实现了同时增强的发射极注入效率和降低的失调电压，因此，本发明晶体管非常适用于数字以及由高速，低功耗和高击穿电压性能预处理的模拟电路。

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