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1. 发明授权

US06969900B2 Semiconductor diode capable of detecting hydrogen at high temperatures 失效
标题翻译：能够在高温下检测氢的半导体二极管
公开(公告)号：US06969900B2
公开(公告)日：2005-11-29
申请号：US10797863
申请日：2004-03-10
申请人： Wen-Chau Liu , Huey-Ing Chen , Kun-Wei Lin , Chun-Tsen Lu
发明人： Wen-Chau Liu , Huey-Ing Chen , Kun-Wei Lin , Chun-Tsen Lu
IPC分类号： G01N27/00 , G01N33/00
CPC分类号： G01N33/005
摘要： A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element different from X, and Z is a Group V element, a semiconductor contact-enhancing layer formed on the active layer and made from a compound having the formula MN, in which M is a Group III element, and N is a Group V element, an ohmic contact layer formed on the semiconductor contact-enhancing layer, and a Schottky barrier contact layer formed on the active layer. The Schottky barrier contact layer is made from a metal that is capable of dissociating a hydrogen molecule into hydrogen atoms.
摘要翻译：具有氢检测能力的半导体二极管包括半导体衬底，形成在衬底上并由具有式XYZ的化合物制成的掺杂半导体有源层，其中X是III族元素，Y是与X不同的另一III族元素， Z是V族元素，形成在有源层上并由具有式MN的化合物制成的半导体接触增强层，其中M是III族元素，N是V族元素，欧姆接触层形成在半导体接触增强层上的肖特基势垒接触层，形成在有源层上的肖特基势垒接触层。肖特基势垒接触层由能够将氢分子解离成氢原子的金属制成。

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