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1. 发明申请

US20120216156A1 Method of Pattern Selection for Source and Mask Optimization 有权
标题翻译：源和掩码优化的模式选择方法
公开(公告)号：US20120216156A1
公开(公告)日：2012-08-23
申请号：US13505286
申请日：2010-10-26
申请人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li , Jun Ye , Min-Chun Tsai , Youping Zhang , Yen-Wen Lu , Jiangwei Li
发明人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li , Jun Ye , Min-Chun Tsai , Youping Zhang , Yen-Wen Lu , Jiangwei Li
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70441 , G03F7/705 , G03F7/70666 , G06F17/50 , G06F17/5009
摘要： The present invention relates to a method of selecting a subset of patterns from a design, to a method of performing source and mask optimization, and to a computer program product for performing the method of selecting a subset of patterns from a design. According to certain aspects, the present invention enables coverage of the full design while lowering the computation cost by intelligently selecting a subset of patterns from a design in which the design or a modification of the design is configured to be imaged onto a substrate via a lithographic process. The method of selecting the subset of patterns from a design includes identifying a set of patterns from the design related to the predefined representation of the design. By selecting the subset of patterns according to the method, the selected subset of patterns constitutes a similar predefined representation of the design as the set of patterns.
摘要翻译：本发明涉及从设计中选择模式子集的方法，以及执行源和掩码优化的方法以及用于执行从设计中选择模式子集的方法的计算机程序产品。根据某些方面，本发明能够覆盖整个设计，同时降低计算成本，通过智能地从设计中选择图案子集，其中设计的设计或修改被配置为经由光刻成像到衬底上处理。从设计中选择图案子集的方法包括从与设计的预定义表示相关的设计中识别一组图案。通过根据该方法选择模式子集，所选择的模式子集构成与模式集合相似的设计表示。

2. 发明授权

US08739082B2 Method of pattern selection for source and mask optimization 有权
标题翻译：源和掩码优化的图案选择方法
公开(公告)号：US08739082B2
公开(公告)日：2014-05-27
申请号：US13505286
申请日：2010-10-26
申请人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li , Jun Ye , Min-Chun Tsai , Youping Zhang , Yen-Wen Lu , Jiangwei Li
发明人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li , Jun Ye , Min-Chun Tsai , Youping Zhang , Yen-Wen Lu , Jiangwei Li
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70441 , G03F7/705 , G03F7/70666 , G06F17/50 , G06F17/5009
摘要： The present invention relates to a method of selecting a subset of patterns from a design, to a method of performing source and mask optimization, and to a computer program product for performing the method of selecting a subset of patterns from a design. According to certain aspects, the present invention enables coverage of the full design while lowering the computation cost by intelligently selecting a subset of patterns from a design in which the design or a modification of the design is configured to be imaged onto a substrate via a lithographic process. The method of selecting the subset of patterns from a design includes identifying a set of patterns from the design related to the predefined representation of the design. By selecting the subset of patterns according to the method, the selected subset of patterns constitutes a similar predefined representation of the design as the set of patterns.
摘要翻译：本发明涉及从设计中选择模式子集的方法，以及执行源和掩码优化的方法以及用于执行从设计中选择模式子集的方法的计算机程序产品。根据某些方面，本发明能够覆盖整个设计，同时降低计算成本，通过智能地从设计中选择图案子集，其中设计的设计或修改被配置为经由光刻成像到衬底上处理。从设计中选择图案子集的方法包括从与设计的预定义表示相关的设计中识别一组图案。通过根据该方法选择模式子集，所选择的模式子集构成与模式集合相似的设计表示。

3. 发明授权

US08543947B2 Selection of optimum patterns in a design layout based on diffraction signature analysis 有权
$Selection of optimum patterns in a design layout based on diffraction signature analysis$
标题翻译：基于衍射特征分析在设计布局中选择最佳图案
公开(公告)号：US08543947B2
公开(公告)日：2013-09-24
申请号：US12914954
申请日：2010-10-28
申请人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li
发明人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70441 , G03F7/705 , G03F7/70666 , G06F17/50 , G06F17/5009
摘要： The present invention relates generally to selecting optimum patterns based on diffraction signature analysis, and more particularly to, using the optimum patterns for mask-optimization for lithographic imaging. A respective diffraction map is generated for each of a plurality of target patterns from an initial larger set of target patterns from the design layout. Diffraction signatures are identified from the various diffraction maps. The plurality of target patterns is grouped into various diffraction-signature groups, the target patterns in a specific diffraction-signature group having similar diffraction signature. A subset of target patterns is selected to cover all possible diffraction-signature groups, such that the subset of target patterns represents at least a part of the design layout for the lithographic process. The grouping of the plurality of target patterns may be governed by predefined rules based on similarity of diffraction signature. The predefined rules comprise coverage relationships existing between the various diffraction-signature groups.
摘要翻译：本发明一般涉及基于衍射特征分析来选择最佳图案，并且更具体地涉及使用用于光刻成像的掩模优化的最佳图案。从来自设计布局的初始较大的目标图案集合中的多个目标图案中的每一个生成相应的衍射图。从各种衍射图识别衍射特征。多个目标图案被分组成各种衍射签名组，具有相似衍射特征的特定衍射签名组中的目标图案。选择目标图案的子集以覆盖所有可能的衍射签名组，使得目标图案的子集代表光刻工艺的设计布局的至少一部分。多个目标图案的分组可以通过基于衍射签名的相似性的预定规则来管理。预定义的规则包括存在于各种衍射签名组之间的覆盖关系。

4. 发明申请

US20110107280A1 Selection of Optimum Patterns in a Design Layout Based on Diffraction Signature Analysis 有权
$Selection of Optimum Patterns in a Design Layout Based on Diffraction Signature Analysis$
标题翻译：基于衍射签名分析的设计布局中最优模式的选择
公开(公告)号：US20110107280A1
公开(公告)日：2011-05-05
申请号：US12914954
申请日：2010-10-28
申请人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li
发明人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70441 , G03F7/705 , G03F7/70666 , G06F17/50 , G06F17/5009
摘要： The present invention relates generally to selecting optimum patterns based on diffraction signature analysis, and more particularly to, using the optimum patterns for mask-optimization for lithographic imaging. A respective diffraction map is generated for each of a plurality of target patterns from an initial larger set of target patterns from the design layout. Diffraction signatures are identified from the various diffraction maps. The plurality of target patterns is grouped into various diffraction-signature groups, the target patterns in a specific diffraction-signature group having similar diffraction signature. A subset of target patterns is selected to cover all possible diffraction-signature groups, such that the subset of target patterns represents at least a part of the design layout for the lithographic process. The grouping of the plurality of target patterns may be governed by predefined rules based on similarity of diffraction signature. The predefined rules comprise coverage relationships existing between the various diffraction-signature groups.
摘要翻译：本发明一般涉及基于衍射特征分析来选择最佳图案，更具体地说，涉及使用用于光刻成像的掩模优化的最佳图案。从来自设计布局的初始较大的目标图案集合中的多个目标图案中的每一个生成相应的衍射图。从各种衍射图识别衍射特征。多个目标图案被分组成各种衍射签名组，具有相似衍射特征的特定衍射签名组中的目标图案。选择目标图案的子集以覆盖所有可能的衍射签名组，使得目标图案的子集代表光刻工艺的设计布局的至少一部分。多个目标图案的分组可以通过基于衍射签名的相似性的预定规则来管理。预定义的规则包括存在于各种衍射签名组之间的覆盖关系。

5. 发明授权

US07747978B2 System and method for creating a focus-exposure model of a lithography process 有权
标题翻译：用于创建光刻工艺的焦点曝光模型的系统和方法
公开(公告)号：US07747978B2
公开(公告)日：2010-06-29
申请号：US11461994
申请日：2006-08-02
申请人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

6. 发明申请

US20070031745A1 SYSTEM AND METHOD FOR CREATING A FOCUS-EXPOSURE MODEL OF A LITHOGRAPHY PROCESS 有权
标题翻译：用于创建光刻过程的聚焦曝光模型的系统和方法
公开(公告)号：US20070031745A1
公开(公告)日：2007-02-08
申请号：US11461994
申请日：2006-08-02
申请人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G03C5/00 , G03B27/42
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

7. 发明授权

US08887104B2 Correction for flare effects in lithography system 有权
标题翻译：光刻系统中光斑效应的校正
公开(公告)号：US08887104B2
公开(公告)日：2014-11-11
申请号：US13823685
申请日：2011-09-01
申请人： Hua-Yu Liu , Jiangwei Li , Luoqi Chen , Wei Liu , Jiong Jiang
发明人： Hua-Yu Liu , Jiangwei Li , Luoqi Chen , Wei Liu , Jiong Jiang
IPC分类号： G06F17/50 , G03F7/20
CPC分类号： G06F17/5045 , G03F7/705 , G03F7/70941 , G06F17/5009
摘要： A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare. Some of the system-specific effects included in the simulation are: a flare effect due to reflection from black border of a mask, a flare effect due to reflection from one or more reticle-masking blades defining an exposure slit, a flare effect due to overscan, a flare effect due reflections from a gas-lock sub-aperture of a dynamic gas lock (DGL) mechanism, and a flare effect due to contribution from neighboring exposure fields.
摘要翻译：描述了一种用于降低由用于将设计布局成像到基板上的光刻设备产生的火炬的影响的方法。通过将曝光场上的设计布局的密度图与点扩散函数（PSF）进行数学组合来模拟光刻设备的曝光区域中的耀斑图，其中可以在闪光图中对系统特定的影响模拟。通过使用确定的耀斑图计算设计布局的位置相关的光斑校正，从而减少了耀斑的影响。仿真中包括的一些系统特定效果是：由于掩模的黑色边缘的反射引起的耀斑效应，由于限定曝光狭缝的一个或多个掩模版掩模片的反射引起的耀斑效应，由于过扫描，来自动态气体锁（DGL）机构的气体锁定子孔的反射引起的闪光效应，以及由于来自相邻曝光场的贡献而产生的耀斑效果。

8. 发明授权

US08245160B2 System and method for creating a focus-exposure model of a lithography process 有权
标题翻译：用于创建光刻工艺的焦点曝光模型的系统和方法
公开(公告)号：US08245160B2
公开(公告)日：2012-08-14
申请号：US13244051
申请日：2011-09-23
申请人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

9. 发明申请

US20100229147A1 SYSTEM AND METHOD FOR CREATING A FOCUS-EXPOSURE MODEL OF A LITHOGRAPHY PROCESS 有权
标题翻译：用于创建光刻过程的聚焦曝光模型的系统和方法
公开(公告)号：US20100229147A1
公开(公告)日：2010-09-09
申请号：US12782666
申请日：2010-05-18
申请人： Jun YE , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun YE , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

10. 发明申请

US20130185681A1 CORRECTION FOR FLARE EFFECTS IN LITHOGRAPHY SYSTEM 有权
标题翻译：校正系统中的FLASH效应的校正
公开(公告)号：US20130185681A1
公开(公告)日：2013-07-18
申请号：US13823685
申请日：2011-09-01
申请人： Hua-Yu Liu , Jiangwei Li , Luoqi Chen , Wei Liu , Jiong Jiang
发明人： Hua-Yu Liu , Jiangwei Li , Luoqi Chen , Wei Liu , Jiong Jiang
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G03F7/705 , G03F7/70941 , G06F17/5009
摘要： A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare. Some of the system-specific effects included in the simulation are: a flare effect due to reflection from black border of a mask, a flare effect due to reflection from one or more reticle-masking blades defining an exposure slit, a flare effect due to overscan, a flare effect due reflections from a gas-lock sub-aperture of a dynamic gas lock (DGL) mechanism, and a flare effect due to contribution from neighboring exposure fields.
摘要翻译：描述了一种用于降低由用于将设计布局成像到基板上的光刻设备产生的火炬的影响的方法。通过将曝光场上的设计布局的密度图与点扩散函数（PSF）进行数学组合来模拟光刻设备的曝光区域中的耀斑图，其中可以在闪光图中对系统特定的影响模拟。通过使用确定的耀斑图计算设计布局的位置相关的光斑校正，从而减少了耀斑的影响。仿真中包括的一些系统特定效果是：由于掩模的黑色边缘的反射引起的耀斑效应，由于限定曝光狭缝的一个或多个掩模版掩模片的反射引起的耀斑效应，由于过扫描，来自动态气体锁（DGL）机构的气体锁定子孔的反射引起的闪光效应，以及由于来自相邻曝光场的贡献而产生的耀斑效果。

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