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1. 发明申请

US20130185681A1 CORRECTION FOR FLARE EFFECTS IN LITHOGRAPHY SYSTEM 有权
标题翻译：校正系统中的FLASH效应的校正
公开(公告)号：US20130185681A1
公开(公告)日：2013-07-18
申请号：US13823685
申请日：2011-09-01
申请人： Hua-Yu Liu , Jiangwei Li , Luoqi Chen , Wei Liu , Jiong Jiang
发明人： Hua-Yu Liu , Jiangwei Li , Luoqi Chen , Wei Liu , Jiong Jiang
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G03F7/705 , G03F7/70941 , G06F17/5009
摘要： A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare. Some of the system-specific effects included in the simulation are: a flare effect due to reflection from black border of a mask, a flare effect due to reflection from one or more reticle-masking blades defining an exposure slit, a flare effect due to overscan, a flare effect due reflections from a gas-lock sub-aperture of a dynamic gas lock (DGL) mechanism, and a flare effect due to contribution from neighboring exposure fields.
摘要翻译：描述了一种用于降低由用于将设计布局成像到基板上的光刻设备产生的火炬的影响的方法。通过将曝光场上的设计布局的密度图与点扩散函数（PSF）进行数学组合来模拟光刻设备的曝光区域中的耀斑图，其中可以在闪光图中对系统特定的影响模拟。通过使用确定的耀斑图计算设计布局的位置相关的光斑校正，从而减少了耀斑的影响。仿真中包括的一些系统特定效果是：由于掩模的黑色边缘的反射引起的耀斑效应，由于限定曝光狭缝的一个或多个掩模版掩模片的反射引起的耀斑效应，由于过扫描，来自动态气体锁（DGL）机构的气体锁定子孔的反射引起的闪光效应，以及由于来自相邻曝光场的贡献而产生的耀斑效果。

2. 发明授权

US08887104B2 Correction for flare effects in lithography system 有权
标题翻译：光刻系统中光斑效应的校正
公开(公告)号：US08887104B2
公开(公告)日：2014-11-11
申请号：US13823685
申请日：2011-09-01
申请人： Hua-Yu Liu , Jiangwei Li , Luoqi Chen , Wei Liu , Jiong Jiang
发明人： Hua-Yu Liu , Jiangwei Li , Luoqi Chen , Wei Liu , Jiong Jiang
IPC分类号： G06F17/50 , G03F7/20
CPC分类号： G06F17/5045 , G03F7/705 , G03F7/70941 , G06F17/5009
摘要： A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare. Some of the system-specific effects included in the simulation are: a flare effect due to reflection from black border of a mask, a flare effect due to reflection from one or more reticle-masking blades defining an exposure slit, a flare effect due to overscan, a flare effect due reflections from a gas-lock sub-aperture of a dynamic gas lock (DGL) mechanism, and a flare effect due to contribution from neighboring exposure fields.
摘要翻译：描述了一种用于降低由用于将设计布局成像到基板上的光刻设备产生的火炬的影响的方法。通过将曝光场上的设计布局的密度图与点扩散函数（PSF）进行数学组合来模拟光刻设备的曝光区域中的耀斑图，其中可以在闪光图中对系统特定的影响模拟。通过使用确定的耀斑图计算设计布局的位置相关的光斑校正，从而减少了耀斑的影响。仿真中包括的一些系统特定效果是：由于掩模的黑色边缘的反射引起的耀斑效应，由于限定曝光狭缝的一个或多个掩模版掩模片的反射引起的耀斑效应，由于过扫描，来自动态气体锁（DGL）机构的气体锁定子孔的反射引起的闪光效应，以及由于来自相邻曝光场的贡献而产生的耀斑效果。

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