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1. 发明授权

US07747978B2 System and method for creating a focus-exposure model of a lithography process 有权
标题翻译：用于创建光刻工艺的焦点曝光模型的系统和方法
公开(公告)号：US07747978B2
公开(公告)日：2010-06-29
申请号：US11461994
申请日：2006-08-02
申请人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

2. 发明申请

US20070031745A1 SYSTEM AND METHOD FOR CREATING A FOCUS-EXPOSURE MODEL OF A LITHOGRAPHY PROCESS 有权
标题翻译：用于创建光刻过程的聚焦曝光模型的系统和方法
公开(公告)号：US20070031745A1
公开(公告)日：2007-02-08
申请号：US11461994
申请日：2006-08-02
申请人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G03C5/00 , G03B27/42
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

3. 发明授权

US08245160B2 System and method for creating a focus-exposure model of a lithography process 有权
标题翻译：用于创建光刻工艺的焦点曝光模型的系统和方法
公开(公告)号：US08245160B2
公开(公告)日：2012-08-14
申请号：US13244051
申请日：2011-09-23
申请人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

4. 发明申请

US20100229147A1 SYSTEM AND METHOD FOR CREATING A FOCUS-EXPOSURE MODEL OF A LITHOGRAPHY PROCESS 有权
标题翻译：用于创建光刻过程的聚焦曝光模型的系统和方法
公开(公告)号：US20100229147A1
公开(公告)日：2010-09-09
申请号：US12782666
申请日：2010-05-18
申请人： Jun YE , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun YE , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

5. 发明申请

US20120017183A1 System and Method for Creating a Focus-Exposure Model of a Lithography Process 有权
标题翻译：用于创建光刻过程聚焦曝光模型的系统和方法
公开(公告)号：US20120017183A1
公开(公告)日：2012-01-19
申请号：US13244051
申请日：2011-09-23
申请人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

6. 发明授权

US08065636B2 System and method for creating a focus-exposure model of a lithography process 有权
标题翻译：用于创建光刻工艺的焦点曝光模型的系统和方法
公开(公告)号：US08065636B2
公开(公告)日：2011-11-22
申请号：US12782666
申请日：2010-05-18
申请人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

7. 发明申请

US20120216156A1 Method of Pattern Selection for Source and Mask Optimization 有权
标题翻译：源和掩码优化的模式选择方法
公开(公告)号：US20120216156A1
公开(公告)日：2012-08-23
申请号：US13505286
申请日：2010-10-26
申请人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li , Jun Ye , Min-Chun Tsai , Youping Zhang , Yen-Wen Lu , Jiangwei Li
发明人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li , Jun Ye , Min-Chun Tsai , Youping Zhang , Yen-Wen Lu , Jiangwei Li
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70441 , G03F7/705 , G03F7/70666 , G06F17/50 , G06F17/5009
摘要： The present invention relates to a method of selecting a subset of patterns from a design, to a method of performing source and mask optimization, and to a computer program product for performing the method of selecting a subset of patterns from a design. According to certain aspects, the present invention enables coverage of the full design while lowering the computation cost by intelligently selecting a subset of patterns from a design in which the design or a modification of the design is configured to be imaged onto a substrate via a lithographic process. The method of selecting the subset of patterns from a design includes identifying a set of patterns from the design related to the predefined representation of the design. By selecting the subset of patterns according to the method, the selected subset of patterns constitutes a similar predefined representation of the design as the set of patterns.
摘要翻译：本发明涉及从设计中选择模式子集的方法，以及执行源和掩码优化的方法以及用于执行从设计中选择模式子集的方法的计算机程序产品。根据某些方面，本发明能够覆盖整个设计，同时降低计算成本，通过智能地从设计中选择图案子集，其中设计的设计或修改被配置为经由光刻成像到衬底上处理。从设计中选择图案子集的方法包括从与设计的预定义表示相关的设计中识别一组图案。通过根据该方法选择模式子集，所选择的模式子集构成与模式集合相似的设计表示。

8. 发明授权

US08739082B2 Method of pattern selection for source and mask optimization 有权
标题翻译：源和掩码优化的图案选择方法
公开(公告)号：US08739082B2
公开(公告)日：2014-05-27
申请号：US13505286
申请日：2010-10-26
申请人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li , Jun Ye , Min-Chun Tsai , Youping Zhang , Yen-Wen Lu , Jiangwei Li
发明人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li , Jun Ye , Min-Chun Tsai , Youping Zhang , Yen-Wen Lu , Jiangwei Li
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70441 , G03F7/705 , G03F7/70666 , G06F17/50 , G06F17/5009
摘要： The present invention relates to a method of selecting a subset of patterns from a design, to a method of performing source and mask optimization, and to a computer program product for performing the method of selecting a subset of patterns from a design. According to certain aspects, the present invention enables coverage of the full design while lowering the computation cost by intelligently selecting a subset of patterns from a design in which the design or a modification of the design is configured to be imaged onto a substrate via a lithographic process. The method of selecting the subset of patterns from a design includes identifying a set of patterns from the design related to the predefined representation of the design. By selecting the subset of patterns according to the method, the selected subset of patterns constitutes a similar predefined representation of the design as the set of patterns.
摘要翻译：本发明涉及从设计中选择模式子集的方法，以及执行源和掩码优化的方法以及用于执行从设计中选择模式子集的方法的计算机程序产品。根据某些方面，本发明能够覆盖整个设计，同时降低计算成本，通过智能地从设计中选择图案子集，其中设计的设计或修改被配置为经由光刻成像到衬底上处理。从设计中选择图案子集的方法包括从与设计的预定义表示相关的设计中识别一组图案。通过根据该方法选择模式子集，所选择的模式子集构成与模式集合相似的设计表示。

9. 发明授权

US08589829B2 Three-dimensional mask model for photolithography simulation 有权
公开(公告)号：US08589829B2
公开(公告)日：2013-11-19
申请号：US13736929
申请日：2013-01-08
申请人： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
发明人： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/705 , G06F17/5009
摘要： A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

10. 发明授权

US07117478B2 System and method for lithography simulation 有权
公开(公告)号：US07117478B2
公开(公告)日：2006-10-03
申请号：US11037988
申请日：2005-01-18
申请人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
发明人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
IPC分类号： G06F17/50 , G03F1/00 , G21K5/00 , G06F19/00
CPC分类号： G06F17/5009 , G03F1/00 , G03F7/004 , G03F7/705 , G03F7/70666 , G06F17/5081 , G06F19/00 , G06F2217/12 , G06F2217/14 , G06T7/0004 , G06T2207/30148 , G21K5/00
摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.

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