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1. 发明授权

US06214243B1 Process for producing a speed of rotation coriolis sensor 有权
标题翻译：生产旋转速度科里奥利传感器的方法
公开(公告)号：US06214243B1
公开(公告)日：2001-04-10
申请号：US09051878
申请日：1998-10-20
申请人： Horst Muenzel , Franz Laermer , Michael Offenberg , Andrea Schilp , Markus Lutz
发明人： Horst Muenzel , Franz Laermer , Michael Offenberg , Andrea Schilp , Markus Lutz
IPC分类号： B81B702
CPC分类号： G01C19/5747 , B81B3/0051 , B81B2201/0242 , B81B2203/058 , G01C19/5769
摘要： A process for the manufacture of a Coriolis rate-of-rotation sensor with oscillatory support masses spring-suspended on a substrate as well as driving means for the excitation of the planar oscillation of the oscillating masses and evaluation means for the determination of a Coriolis acceleration. Oscillating masses, driving means and integrated stops are structured in a common operation by means of plasma etching from a silicon-on-insulator (SOI) wafer.
摘要翻译：用于制造具有弹簧悬浮在基板上的振荡支撑质量的科里奥利旋转速度传感器的方法以及用于激发振荡块的平面振荡的驱动装置和用于确定科里奥利加速度的评估装置。通过从绝缘体上硅（SOI）晶片进行等离子体蚀刻，振荡质量，驱动装置和集成止动器通过共同的操作构成。

2. 发明授权

US5616523A Method of manufacturing sensor 失效
标题翻译：制造传感器的方法
公开(公告)号：US5616523A
公开(公告)日：1997-04-01
申请号：US627819
申请日：1996-04-02
申请人： Gerhard Benz , Jiri Marek , Frank Bantien , Horst Muenzel , Franz Laermer , Michael Offenberg , Andrea Schilp
发明人： Gerhard Benz , Jiri Marek , Frank Bantien , Horst Muenzel , Franz Laermer , Michael Offenberg , Andrea Schilp
IPC分类号： H01L21/306 , G01P15/08 , G01P15/125 , H01L29/84
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0817 , G01P2015/0828
摘要： A method for manufacturing sensors from a multilayer plate with upper and lower monocrystalline silicon layers and an etching layer between them. The upper silicon layer is structured by the introduction of troughs therein extending down to the etching layer. Sensor structures, such as a bending beam that is used in an acceleration sensor, are created by etching the etching layer beneath a part of the silicon layer structured in this manner.
摘要翻译：一种从具有上，下单晶硅层的多层板和它们之间的蚀刻层制造传感器的方法。上硅层通过引入其中向下延伸到蚀刻层的槽而构成。传感器结构，例如用于加速度传感器中的弯曲梁，通过蚀刻以这种方式构造的硅层的一部分下方的蚀刻层来产生。

3. 发明授权

US5542558A Method for manufacturing micro-mechanical components using selective anodization of silicon 失效
标题翻译：使用硅的选择性阳极氧化制造微机械部件的方法
公开(公告)号：US5542558A
公开(公告)日：1996-08-06
申请号：US308245
申请日：1994-09-19
申请人： Gerhard Benz , Jiri Marek , Martin Willmann , Frank Bantien , Horst Muenzel , Franz Laermer , Michael Offenberg , Andrea Schilp
发明人： Gerhard Benz , Jiri Marek , Martin Willmann , Frank Bantien , Horst Muenzel , Franz Laermer , Michael Offenberg , Andrea Schilp
IPC分类号： H01L29/84 , F16C11/06 , F16C23/04 , F16C33/10 , G01P15/08 , H01L21/3063 , H01L21/316 , H01L21/306
CPC分类号： G01P15/0802 , Y10S438/96
摘要： A method for manufacturing micro-mechanical components in which a structure is produced on a silicon layer, which is to be undercut in a further step. The silicon is selectively anodized for this undercutting operation. Thus, the method enables the manufacturing of micro-mechanical components that can be integrated together with bipolar circuit elements.
摘要翻译：一种制造微机械部件的方法，其中在另一步骤中将被切削的硅层上产生结构。对于该底切操作，硅被选择性地阳极氧化。因此，该方法能够制造可与双极电路元件集成在一起的微机械部件。

4. 发明授权

US6117701A Method for manufacturing a rate-of-rotation sensor 失效
标题翻译：旋转传感器的制造方法
公开(公告)号：US6117701A
公开(公告)日：2000-09-12
申请号：US907601
申请日：1997-08-08
申请人： Nicholas Buchan , Horst Muenzel , Franz Laermer , Michael Offenberg , Udo Bischof , Markus Lutz
发明人： Nicholas Buchan , Horst Muenzel , Franz Laermer , Michael Offenberg , Udo Bischof , Markus Lutz
IPC分类号： G01C19/56 , G01C19/5755 , G01C19/5769 , G01P15/08 , H01L29/84 , H01L41/08 , H01L21/00 , G01P15/00
CPC分类号： G01C19/5755 , G01C19/5769 , G01P15/0802 , G01P2015/0814
摘要： A rate-of-rotation sensor includes a three-layer system. The rate-of-rotation sensor and the conductor traces are patterned out of the third layer. The conductor traces are electrically insulated (isolated) by cutouts from other regions of the third layer and by a second electrically insulating layer from a first layer. Thus, a simple electrical contacting (configuration) is achieved that is patterned out of a three-layer system. Since the same etching process is used for the first and the third layer, an especially efficient manufacturing is possible.
摘要翻译：旋转速度传感器包括三层系统。转速传感器和导体迹线从第三层图案化。导体迹线通过从第三层的其它区域的切口和与第一层的第二电绝缘层的切口电绝缘（隔离）。因此，实现了由三层系统构图的简单的电接触（构造）。由于在第一和第三层使用相同的蚀刻工艺，所以可以进行特别有效的制造。

5. 发明授权

US06268232B1 Method for fabricating a micromechanical component 有权
标题翻译：微机械部件的制造方法
公开(公告)号：US06268232B1
公开(公告)日：2001-07-31
申请号：US09302224
申请日：1999-04-29
申请人： Helmut Skapa , Horst Muenzel , Franz Laermer , Michael Offenberg , Heinz-Georg Vossenberg
发明人： Helmut Skapa , Horst Muenzel , Franz Laermer , Michael Offenberg , Heinz-Georg Vossenberg
IPC分类号： H01L2100
CPC分类号： G01P15/0802 , B81B2201/0235 , B81C1/00571 , B81C2201/0109 , B81C2201/014 , B81C2201/056 , B81C2203/0109 , G01P1/023
摘要： A method for fabricating a micromechanical component, in particular a surface-micromechanical acceleration sensor, involves preparing a substrate and providing an insulation layer on the substrate, in which a patterned circuit trace layer is buried. A conductive layer, including a first region and a second region, is provided on the insulation layer, and a movable element is configured in the first region by forming a first plurality of trenches and by using an etching agent to remove at least one portion of the insulation layer from underneath the conductive layer. A contact element is formed and electrically connected to the circuit trace layer in the second region by configuring a second plurality of trenches, and the resultant movable element is encapsulated in the first region. The second plurality of trenches for forming the contact element in the second region is first formed after the encapsulation of the movable element formed in the first region.
摘要翻译：用于制造微机械部件，特别是表面微机械加速度传感器的方法涉及准备衬底并在衬底上提供绝缘层，其中掩埋有图案化的电路迹线层。包括第一区域和第二区域的导电层设置在绝缘层上，并且可移动元件通过形成第一多个沟槽而被构造在第一区域中，并且通过使用蚀刻剂去除至少一部分绝缘层从导电层下面。通过构造第二多个沟槽，形成接触元件并在第二区域中电连接到电路迹线层，并且所得到的可移动元件被封装在第一区域中。在第二区域中形成接触元件的第二多个沟槽首先在形成在第一区域中的可移动元件的封装之后形成。

6. 发明授权

US06558559B1 Method of manufacturing micromechanical surface structures by vapor-phase etching 失效
标题翻译：通过气相蚀刻制造微机械表面结构的方法
公开(公告)号：US06558559B1
公开(公告)日：2003-05-06
申请号：US09019011
申请日：1998-02-05
申请人： Volker Becker , Franz Laermer , Michael Offenberg , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Michael Offenberg , Andrea Schilp
IPC分类号： C23F100
CPC分类号： B81C1/00
摘要： A method of sacrificial layer etching of micromechanical surface structures, in which a sacrificial layer is deposited on a heatable silicon substrate and is structured. A temperature difference between the substrate and the vapor phase of an etching medium is established in such a way that exposed metal contacts made of aluminum alloys are not attacked at the same time and are not subsequently exposed to any risk of corrosion.
摘要翻译：一种牺牲层蚀刻微机械表面结构的方法，其中牺牲层沉积在可加热的硅衬底上并被构造。蚀刻介质的衬底和气相之间的温度差异以这样的方式建立，使得由铝合金制成的暴露的金属触点不会同时受到冲击，并且不会随后暴露于任何腐蚀的风险。

7. 发明授权

US6030850A Method for manufacturing a sensor 失效
标题翻译：制造传感器的方法
公开(公告)号：US6030850A
公开(公告)日：2000-02-29
申请号：US030414
申请日：1998-02-25
申请人： Juergen Kurle , Karsten Funk , Franz Laermer , Michael Offenberg , Andrea Schilp
发明人： Juergen Kurle , Karsten Funk , Franz Laermer , Michael Offenberg , Andrea Schilp
IPC分类号： G01L1/18 , B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , H01L29/84 , G01L1/00 , H01L21/461
CPC分类号： B81B7/007 , B81C1/0019 , G01P15/0802 , G01P15/125 , B81B2201/0235 , B81B2203/033 , B81C2201/0136 , B81C2203/0118 , G01P2015/0814
摘要： In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.
摘要翻译：在传感器和制造传感器的方法中，可移动元件被图案化为硅层并固定到基底。导电层被细分成彼此电绝缘的各个区域。通过布置在第一和第二绝缘层之间的导电层来建立硅层的各个区域之间的电连接。

8. 发明授权

US5756901A Sensor and method for manufacturing a sensor 失效
标题翻译：用于制造传感器的传感器和方法
公开(公告)号：US5756901A
公开(公告)日：1998-05-26
申请号：US718603
申请日：1996-09-24
申请人： Juergen Kurle , Karsten Funk , Franz Laermer , Michael Offenberg , Andrea Schilp
发明人： Juergen Kurle , Karsten Funk , Franz Laermer , Michael Offenberg , Andrea Schilp
IPC分类号： G01L1/18 , B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , H01L29/84 , G01L1/00
CPC分类号： B81B7/007 , B81C1/0019 , G01P15/0802 , G01P15/125 , B81B2201/0235 , B81B2203/033 , B81C2201/0136 , B81C2203/0118 , G01P2015/0814
摘要： In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.
摘要翻译：在传感器和制造传感器的方法中，可移动元件被图案化为硅层并固定到基底。导电层被细分成彼此电绝缘的各个区域。通过布置在第一和第二绝缘层之间的导电层来建立硅层的各个区域之间的电连接。

9. 发明授权

US06531031B1 Plasma etching installation 有权
标题翻译：等离子刻蚀安装
公开(公告)号：US06531031B1
公开(公告)日：2003-03-11
申请号：US09623734
申请日：2000-11-22
申请人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
发明人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
IPC分类号： H01L2100
CPC分类号： H01J37/321
摘要： A plasma processing system for etching a substrate using a highly dense plasma in a reactor. An ICP coil having a first coil end and a second coil end generating a high-frequency electromagnetic alternating field in the reactor which acts on a reactive gas and, as an inductively coupled plasma source, produces the highly dense plasma from reactive particles and ions. The two coil ends each communicate via a feed point with a high-frequency infeed, which applies in each case a high-frequency a.c. voltage of the same frequency to the first coil end and to the second coil end (21, 21′). The two high-frequency a.c. voltages applied at the two coil ends are connected to a symmetrical, capacitive network via a &lgr;2 -delay line linking the first feed point and the second feed point and are, at least nearly in phase opposition to one another, and have at least nearly the same amplitudes.
摘要翻译：一种用于在反应器中使用高密度等离子体蚀刻衬底的等离子体处理系统。具有第一线圈端和第二线圈端的ICP线圈，其在反应器中产生作用于反应气体的高频电磁交变场，并且作为电感耦合等离子体源，从反应性粒子和离子产生高密度等离子体。两个线圈端各自通过馈电点与高频电源进行通信，每种情况都适用于高频电源。相同频率的电压到第一线圈端和第二线圈端（21,21'）。两个高频a.c. 施加在两个线圈端处的电压通过连接第一馈电点和第二馈电点的lambd2 - 线路连接到对称的电容网络，并且至少几乎相互相反地并且具有至少接近于相同的幅度。

10. 发明授权

US5501893A Method of anisotropically etching silicon 失效
标题翻译：各向异性蚀刻硅的方法
公开(公告)号：US5501893A
公开(公告)日：1996-03-26
申请号：US284490
申请日：1994-08-05
申请人： Franz Laermer , Andrea Schilp
发明人： Franz Laermer , Andrea Schilp
IPC分类号： H01L21/302 , B81C1/00 , H01L21/3065 , H01L21/308 , C25F3/12 , B44C1/22
CPC分类号： H01L21/3085 , B81C1/00619 , H01L21/3065 , H01L21/30655 , B81C2201/0112 , Y10T428/24521
摘要： A method of anisotropic plasma etching of silicon to provide laterally defined recess structures therein through an etching mask employing a plasma, the method including anisotropic plasma etching in an etching step a surface of the silicon by contact with a reactive etching gas to removed material from the surface of the silicon and provide exposed surfaces; polymerizing in a polymerizing step at least one polymer former contained in the plasma onto the surface of the silicon during which the surfaces that were exposed in a preceding etching step are covered by a polymer layer thereby forming a temporary etching stop; and alternatingly repeating the etching step and the polymerizing step. The method provides a high mask selectivity simultaneous with a very high anisotropy of the etched structures.
摘要翻译： PCT No.PCT / DE93 / 01129 Sec。 371日期：1994年8月5日 102（e）日期1994年8月5日PCT提交1993年11月27日PCT公布。出版物WO94 / 14187 日期：1994年6月23日。一种通过使用等离子体的蚀刻掩模在其中提供横向限定的凹陷结构的硅的各向异性等离子体蚀刻的方法，所述方法包括在蚀刻步骤中的各向异性等离子体蚀刻，所述硅的表面通过与反应性蚀刻气体以从硅表面去除材料并提供暴露的表面; 在聚合步骤中将包含在等离子体中的至少一种聚合物前体聚合到硅的表面上，在该表面处，在前面的蚀刻步骤中暴露的表面被聚合物层覆盖，从而形成临时蚀刻停止; 并交替重复蚀刻步骤和聚合步骤。该方法与蚀刻结构的非常高的各向异性同时提供高掩模选择性。

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