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1. 发明授权

US06531031B1 Plasma etching installation 有权
标题翻译：等离子刻蚀安装
公开(公告)号：US06531031B1
公开(公告)日：2003-03-11
申请号：US09623734
申请日：2000-11-22
申请人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
发明人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
IPC分类号： H01L2100
CPC分类号： H01J37/321
摘要： A plasma processing system for etching a substrate using a highly dense plasma in a reactor. An ICP coil having a first coil end and a second coil end generating a high-frequency electromagnetic alternating field in the reactor which acts on a reactive gas and, as an inductively coupled plasma source, produces the highly dense plasma from reactive particles and ions. The two coil ends each communicate via a feed point with a high-frequency infeed, which applies in each case a high-frequency a.c. voltage of the same frequency to the first coil end and to the second coil end (21, 21′). The two high-frequency a.c. voltages applied at the two coil ends are connected to a symmetrical, capacitive network via a &lgr;2 -delay line linking the first feed point and the second feed point and are, at least nearly in phase opposition to one another, and have at least nearly the same amplitudes.
摘要翻译：一种用于在反应器中使用高密度等离子体蚀刻衬底的等离子体处理系统。具有第一线圈端和第二线圈端的ICP线圈，其在反应器中产生作用于反应气体的高频电磁交变场，并且作为电感耦合等离子体源，从反应性粒子和离子产生高密度等离子体。两个线圈端各自通过馈电点与高频电源进行通信，每种情况都适用于高频电源。相同频率的电压到第一线圈端和第二线圈端（21,21'）。两个高频a.c. 施加在两个线圈端处的电压通过连接第一馈电点和第二馈电点的lambd2 - 线路连接到对称的电容网络，并且至少几乎相互相反地并且具有至少接近于相同的幅度。

2. 发明授权

US06720273B1 DEVICE AND METHOD FOR THE HIGH-FREQUENCY ETCHING OF A SUBSTRATE USING A PLASMA ETCHING INSTALLATION AND DEVICE AND METHOD FOR IGNITING A PLASMA AND FOR PULSING THE PLASMA OUT PUT OR ADJUSTING THE SAME UPWARDS 有权
标题翻译：使用等离子体蚀刻安装的基板的高频蚀刻的装置和方法以及用于点燃等离子体并用于脉冲等离子体输出或调整相同UPWARDS的方法
公开(公告)号：US06720273B1
公开(公告)日：2004-04-13
申请号：US09763138
申请日：2001-04-20
申请人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
发明人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
IPC分类号： H01L213065
CPC分类号： H01J37/32174 , C30B33/12 , H01J37/32082 , H01L21/3065 , H01L21/30655 , H01L21/3085 , H01L21/3086
摘要： A device and a method capable of being carried out therewith for, preferably, anisotropically etching a substrate (10), in particular, a patterned silicon body, with the assistance of a plasma (14), is proposed. In the process, the plasma (14) is produced by a plasma source (13) to which a high-frequency generator (17) is connected for applying a high-frequency power. Moreover, this high-frequency generator is in communication with a first means which periodically changes the high-frequency power applied to the plasma source (13). Besides, provision is preferably made for a second means which adapts the output impedance of the high-frequency generator (17) to the prevailing impedance of the plasma source (13) which changes as a function of the high-frequency power. The proposed anisotropic etching method is carried out in separate and alternating etching and polymerization steps, a higher high-frequency power of up to 5000 watts being, at least temporarily, applied to the plasma source (13) during the etching steps than during the deposition steps. The proposed device is also suitable for igniting a plasma (14) and for adjusting upward or pulsing a plasma power from a starting value to up to 5000 watts.
摘要翻译：提出了一种借助于等离子体（14）能够进行优选地各向异性地蚀刻衬底（10）特别是图案化硅体的装置和方法。在该过程中，等离子体（14）由连接有高频发生器（17）的等离子体源（13）产生，以施加高频电力。此外，该高频发生器与周期性地改变施加到等离子体源（13）的高频功率的第一装置通信。此外，优选地对于将高频发生器（17）的输出阻抗适配为等离子体源（13）的主要阻抗（其随高频功率变化而变化）的第二装置进行设置。所提出的各向异性蚀刻方法在分离和交替的蚀刻和聚合步骤中进行，在蚀刻步骤期间至少暂时施加高达5000瓦特的高频功率至等离子体源（13）比在沉积期间更高脚步。所提出的装置还适用于点燃等离子体（14）并且用于将等离子体功率从起始值向上调节或脉冲至高达5000瓦特。

3. 发明授权

US06200822B1 Method for detecting the transition between different materials in semiconductor structures 失效
标题翻译：用于检测半导体结构中不同材料之间的转变的方法
公开(公告)号：US06200822B1
公开(公告)日：2001-03-13
申请号：US09269007
申请日：1999-06-17
申请人： Volker Becker , Franz Laermer , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： H01L2100
CPC分类号： H01J37/32963 , H01J37/32935 , H01L21/30655 , H01L22/26
摘要： A method for detecting the transition between different materials in semiconductor structures during alternating etching and covering steps for anisotropic depthwise etching of defined patterns performed using a plasma. Provision is made for ascertaining, by way of an intensity measurement of at least one specific substance contained in the plasma, the beginning of each etching step by the fact that a characteristic threshold is reached, this also being achievable by way of an external synchronization signal which indicates the beginning and end of each etching step; for then, when the threshold value is reached, starting a delay time which is longer than the course of a first concentration maximum; for a second concentration maximum then to be ascertained after the delay time has elapsed; and for the second concentration maxima of the etching steps to be monitored as to whether they exceed or fall below the predefined value, in order to detect a material transition.
摘要翻译：一种用于在交替蚀刻期间检测半导体结构中的不同材料之间的转变的方法以及使用等离子体进行的限定图案的各向异性深度蚀刻的覆盖步骤。提供了通过对等离子体中包含的至少一种特定物质的强度测量来确定通过达到特征阈值的事实开始每个蚀刻步骤，这也可以通过外部同步信号来实现其表示每个蚀刻步骤的开始和结束; 然后，当达到阈值时，启动比第一浓度最大值的过程更长的延迟时间; 对于第二浓度最大值，然后在延迟时间过去之后确定; 并且为了监测蚀刻步骤的第二浓度最大值是否超过或低于预定值，为了检测材料转变。

4. 发明授权

US07094706B2 Device and method for etching a substrate by using an inductively coupled plasma 有权
公开(公告)号：US07094706B2
公开(公告)日：2006-08-22
申请号：US10763010
申请日：2004-01-21
申请人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
发明人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： H01L21/302
CPC分类号： H01J37/321 , H01J37/3266 , H01L21/3065
摘要： A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.

5. 发明授权

US06911348B1 Device and method for determining the lateral undercut of a structured surface layer 失效
标题翻译：用于确定结构化表面层的横向底切的装置和方法
公开(公告)号：US06911348B1
公开(公告)日：2005-06-28
申请号：US09674984
申请日：2000-03-13
申请人： Volker Becker , Franz Laermer , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： B81C99/00 , H01L21/02 , H01L21/66 , H01L21/00
CPC分类号： H01L28/10 , B81C99/004 , H01L22/12
摘要： A device and a method for determining the extent of an at least locally lateral undercut of a structured surface layer on a sacrificial layer. The structured surface layer for this purpose locally has at least one passive electronic component, using which a physical measured quantity can be determined, which is proportional to the extent of the lateral undercut. The method for generating this device proposes, initially on the structured surface layer in a first etching method, to provide the surface layer at least locally with a structuring having trenches and, in a second etching method, proceeding from the trenches, to undertake at least locally a lateral undercut of the structured surface layer. In this context, in the first etching method on the surface layer, locally at least one passive electronic component is additionally delineated out, which in response to a subsequent undercutting of the surface layer is also undercut. The physical measured quantity is determined without contact, preferably by sending an electromagnetic emission into the passive component.
摘要翻译：用于确定牺牲层上的结构化表面层的至少局部侧向底切的程度的装置和方法。用于此目的的结构化表面层在本地具有至少一个无源电子部件，利用该被动电子部件可以确定与外侧底切的程度成比例的物理测量量。用于产生该装置的方法首先在第一蚀刻方法中在结构化表面层上提出至少局部地提供具有沟槽的结构的表面层，并且以第二蚀刻方法从沟槽进行至少承受局部地是结构化表面层的横向底切。在本文中，在表面层上的第一蚀刻方法中，局部地附加地描绘了至少一个无源电子部件，其响应于表面层的随后的底切也被切削。物理测量的数量是在不接触的情况下确定的，优选地通过向无源部件发送电磁辐射。

6. 发明授权

US06558559B1 Method of manufacturing micromechanical surface structures by vapor-phase etching 失效
标题翻译：通过气相蚀刻制造微机械表面结构的方法
公开(公告)号：US06558559B1
公开(公告)日：2003-05-06
申请号：US09019011
申请日：1998-02-05
申请人： Volker Becker , Franz Laermer , Michael Offenberg , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Michael Offenberg , Andrea Schilp
IPC分类号： C23F100
CPC分类号： B81C1/00
摘要： A method of sacrificial layer etching of micromechanical surface structures, in which a sacrificial layer is deposited on a heatable silicon substrate and is structured. A temperature difference between the substrate and the vapor phase of an etching medium is established in such a way that exposed metal contacts made of aluminum alloys are not attacked at the same time and are not subsequently exposed to any risk of corrosion.
摘要翻译：一种牺牲层蚀刻微机械表面结构的方法，其中牺牲层沉积在可加热的硅衬底上并被构造。蚀刻介质的衬底和气相之间的温度差异以这样的方式建立，使得由铝合金制成的暴露的金属触点不会同时受到冲击，并且不会随后暴露于任何腐蚀的风险。

7. 发明授权

US07052623B1 Method for processing silicon using etching processes 有权
标题翻译：使用蚀刻工艺处理硅的方法
公开(公告)号：US07052623B1
公开(公告)日：2006-05-30
申请号：US09581663
申请日：1999-09-22
申请人： Volker Becker , Franz Laermer , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： H01L21/00
CPC分类号： H01L21/30655 , B81C1/00571 , B81C2201/014
摘要： A method is proposed for etching a first silicon layer (15) that is provided with an etching mask (10) for defining lateral recesses (21). In a first plasma etching process, trenches (21′) are produced in the region of the lateral recesses (21) by anisotropic etching. The first etching process comes virtually to a standstill as soon as a separating layer (12, 14, 14′, 16), buried between the first silicon layer (15) and a further silicon layer (17), is reached. This separating layer is thereupon etched through in exposed regions (23, 23′) by a second etching process. A subsequent third etching process then etches the further silicon layer (17, 17′). In this manner, free-standing structures for sensor elements can be produced in a simple process which is completely compatible with the method steps in IC integration technology.
摘要翻译：提出了一种蚀刻第一硅层（15）的方法，第一硅层（15）设置有用于限定横向凹槽（21）的蚀刻掩模（10）。在第一等离子体蚀刻工艺中，通过各向异性蚀刻在横向凹槽（21）的区域中产生沟槽（21'）。一旦达到掩埋在第一硅层（15）和另一硅层（17）之间的分离层（12,14,14'，16），第一蚀刻工艺实际上就停滞了。然后通过第二蚀刻工艺在曝光区域（23,23'）中蚀刻该分离层。接下来的第三蚀刻工艺然后蚀刻另外的硅层（17,17'）。以这种方式，可以以与IC集成技术中的方法步骤完全兼容的简单过程来生产传感器元件的独立结构。

8. 发明授权

US06899817B1 Device and method for etching a substrate using an inductively coupled plasma 失效
标题翻译：使用电感耦合等离子体蚀刻衬底的装置和方法
公开(公告)号：US06899817B1
公开(公告)日：2005-05-31
申请号：US10031842
申请日：2000-06-06
申请人： Volker Becker , Franz Laermer , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/00 , B44C1/22
CPC分类号： H01J37/321 , H01J37/32623 , H01J37/3266 , H01L21/3065
摘要： A method and a suitable device for carrying out this method is proposed, for etching a substrate (10), especially a silicon element, with the aid of an inductively coupled plasma (14). For this purpose, a high frequency electromagnetic alternating field is generated, which produces an inductively coupled plasma (14) from reactive particles in a reactor (15). In this connection, the inductively coupled plasma (14) comes about by the action of the high frequency electromagnetic alternating field upon a reactive gas. Furthermore, a device, in particular a magnetic field coil (21) is provided which produces a static or timewise varying magnetic field between the substrate (10) and the ICP source (13). For this, the magnetic field is oriented in such a way that its direction is at least approximately or predominantly parallel to the direction defined by the line connecting the substrate (10) and the inductively coupled plasma (14).
摘要翻译：提出了一种用于执行该方法的方法和合适的装置，用于借助于电感耦合等离子体（14）蚀刻基板（10），特别是硅元件。为此，产生高频电磁交变场，其产生来自反应器（15）中的反应性颗粒的电感耦合等离子体（14）。在这方面，电感耦合等离子体（14）通过高频电磁交变场作用在反应气体上。此外，提供了一种装置，特别是磁场线圈（21），其在衬底（10）和ICP源（13）之间产生静态或时间变化的磁场。为此，磁场被定向成使得其方向至少大致或主要与由连接基板（10）和感应耦合等离子体（14）的线限定的方向平行。

9. 发明授权

US06709546B2 Device and method for etching a substrate by using an inductively coupled plasma 有权
标题翻译：通过使用电感耦合等离子体蚀刻衬底的装置和方法
公开(公告)号：US06709546B2
公开(公告)日：2004-03-23
申请号：US09871224
申请日：2001-05-31
申请人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
发明人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： H01L21306
CPC分类号： H01J37/321 , H01J37/3266 , H01L21/3065
摘要： A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.
摘要翻译：通过使用电感耦合等离子体来蚀刻衬底，特别是硅体的器件和方法。使用ICP源产生高频电磁交变场，通过反应气体中的高频电磁交变场的作用产生由反应性粒子构成的感应耦合等离子体。此外，在基板和ICP源之间产生静态或时间可变的磁场，为此目的提供了一个彼此排列的至少两个磁场线圈。所得磁场的方向也大致平行于连接衬底和电感耦合等离子体的连接线限定的方向。最后，利用第一磁场线圈产生第一分量磁场，并且利用第二磁场线圈产生同等强度的第二分量磁场，所述双分量磁场取向为相反方向。

10. 发明授权

US06214161B1 Method and apparatus for anisotropic etching of substrates 有权
标题翻译：用于各向异性蚀刻基板的方法和装置
公开(公告)号：US06214161B1
公开(公告)日：2001-04-10
申请号：US09129903
申请日：1998-08-06
申请人： Volker Becker , Franz Laermer , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： H01L21302
CPC分类号： H01J37/32623 , H01J2237/3345 , H01L21/3065
摘要： Method, apparatus and plasma processing system for anisotropic etching of a substrate using a plasma. A high-frequency alternating electromagnetic field is generated using an inductive coupled plasma source, and a reactive gas or reactive gas mixture is exposed to that high-frequency alternating electromagnetic field in order to generate the plasma. The electrically charged particles of the plasma are accelerated onto the substrate. An aperture having at least one effective surface for electron-ion recombination is inserted between the plasma source and the substrate.
摘要翻译：使用等离子体对基板进行各向异性蚀刻的方法，装置和等离子体处理系统。使用感应耦合等离子体源产生高频交变电磁场，并且将反应性气体或反应气体混合物暴露于该高频交变电磁场以产生等离子体。等离子体的带电粒子被加速到衬底上。具有至少一个用于电子 - 离子复合的有效表面的孔插入等离子体源和衬底之间。

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