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1. 发明申请

WO2002083327A1 LAYERED STACKS AND METHODS OF PRODUCTION THEREOF 审中-公开
标题翻译：分层堆叠及其生产方法
公开(公告)号：WO2002083327A1
公开(公告)日：2002-10-24
申请号：PCT/US2002/011927
申请日：2002-04-16
申请人： HONEYWELL INTERNATIONAL INC. , THOMAS, Michael , DANIELS, Brian , APEN, Paul , NAMAN, Ananth , IWAMOTO, Nancy , KOROLEV, Boris , LI, Bo
发明人： THOMAS, Michael , DANIELS, Brian , APEN, Paul , NAMAN, Ananth , IWAMOTO, Nancy , KOROLEV, Boris , LI, Bo
IPC分类号： B05D7/00
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02362 , H01L21/312 , H01L21/3122 , H01L21/31695 , H01L21/76807 , H01L21/76828 , H05K1/0313
摘要： Low dielectric constant layered materials and a methof for making said layered materials comprising the steps of: a) providing a surface ; b) spinning a dielectric material on to the surface; c) curing the dielectric material to form a dielectric layer; d) spinning a low dielectric constant material on to the dielectric layer; and e) curing the low dielectric constant material to form a low dielectric constant layer. Each layer can be spun-on to the layered component and subsequently cured before additional layers are added or all layers can be spun-on to the layered component and then the entire stack is cured at once.
摘要翻译：低介电常数层状材料和制造所述层状材料的方法包括以下步骤：a）提供表面; b）将介电材料旋转到表面上; c）固化电介质材料以形成电介质层; d）将低介电常数材料旋转到介电层上; 以及e）固化所述低介电常数材料以形成低介电常数层。每个层可以旋涂到层状部件上，随后在添加另外的层之前固化，或者所有层可以旋涂到层状部件上，然后整个堆叠立即固化。

2. 发明申请

WO2004101651A1 MINIMIZATION OF COATING DEFECTS FOR COMPOSITIONS COMPRISING SILICON-BASED COMPOUNDS AND METHODS OF PRODUCING AND PROCESSING 审中-公开
标题翻译：包含硅基化合物的组合物的涂层缺陷的最小化以及生产和加工方法
公开(公告)号：WO2004101651A1
公开(公告)日：2004-11-25
申请号：PCT/US2004/014317
申请日：2004-05-07
申请人： HONEYWELL INTERNATIONAL INC. , BEDWELL, William , XIE, Songyuan , SEPA, Jelena , DUONG, Anh , IWAMOTO, Nancy , APEN, Paul , LEUNG, Roger
发明人： BEDWELL, William , XIE, Songyuan , SEPA, Jelena , DUONG, Anh , IWAMOTO, Nancy , APEN, Paul , LEUNG, Roger
IPC分类号： C08G77/06
CPC分类号： C08J3/091 , C08J2383/04
摘要： Polymer solutions are described herein that comprise: a) at least one silicon-based polymer having high molecular weight species and low molecular weight species after solvation with a compatible primary solvent, wherein the low molecular weight species crystallize in or precipitate out of the polymer solution; b) a primary solvent that solvates the high molecular weight species in the solution; and c) at least one additional solvent that solvates the low molecular weight species in the solution. Methods of producing a polymer solution are also described herein that comprise: a) providing at least one silicon-based polymer having high molecular weight species and low molecular weight species after solvation with a compatible primary solvent, wherein the low molecular weight species crystallize in or precipitate out of the polymer solution; b) providing a primary solvent that solvates the high molecular weight species in the solution; c) providing at least one additional solvent that solvates the low molecular weight species in the solution; and d) blending the at least one silicon-based polymer, the primary solvent and the at least one additional solvent to form the polymer solution. Methods of processing a polymer solution include: a) providing a filtration method or device, b) providing a polymer solution comprising high molecular weight species and low molecular weight species, wherein the low molecular weight species are in the form of crystals or precipitates, and c) utilizing the filtration method or device to filter the low molecular weight species out from the polymer solution.
摘要翻译：本文描述了聚合物溶液，其包含：a）至少一种具有高分子量物质和低分子量物质的硅基聚合物，在用相容的主要溶剂溶剂化之后，其中低分子量物质在聚合物溶液中结晶或沉淀出聚合物溶液 ; b）溶解溶液中高分子量物质的主要溶剂; 和c）溶解溶液中低分子量物质的至少一种另外的溶剂。本文还描述了生产聚合物溶液的方法，其包括：a）在用相容的主要溶剂溶剂化后，提供至少一种具有高分子量物质和低分子量物质的硅基聚合物，其中低分子量物质在从聚合物溶液中沉淀出来; b）提供溶解溶液中的高分子量物质的主要溶剂; c）提供溶解溶液中低分子量物质的至少一种另外的溶剂; 和d）共混所述至少一种硅基聚合物，所述主要溶剂和所述至少一种另外的溶剂以形成所述聚合物溶液。处理聚合物溶液的方法包括：a）提供过滤方法或装置，b）提供包含高分子量物质和低分子量物质的聚合物溶液，其中低分子量物质是晶体或沉淀物的形式，以及 c）利用过滤方法或装置从聚合物溶液中过滤低分子量物质。

3. 发明申请

WO2005010071A1 ORGANIC COMPOSITIONS 审中-公开
标题翻译：有机成分
公开(公告)号：WO2005010071A1
公开(公告)日：2005-02-03
申请号：PCT/US2003/041533
申请日：2003-12-30
申请人： HONEYWELL INTERNATIONAL INC , LI, Bo , LAU, Kreisler , APEN, Paul
发明人： LI, Bo , LAU, Kreisler , APEN, Paul
IPC分类号： C08G61/00
CPC分类号： C07C17/10 , C07C13/615 , C07C13/64 , C07C17/269 , C07C2603/74 , C07C2603/90 , C08G61/06 , C07C23/46 , C07C25/22
摘要： Compositions and methods of forming and using those compositions are provided herein where the composition comprises at least one oligomer or polymer of Formula I wherein E is a cage compound; each Q is the same or different and selected from aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; A is substituted or unsubstituted aryl with substituted or unsubstituted arylalkynyl group (substituents include hydrogen, halogen, alkyl, phenyl or substituted aryl; and aryl includes phenyl, biphenyl, naphthyl, terphenyl, anthracenyl, polyphenylene, polyphenylene ether, or substituted aryl); h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1.
摘要翻译：本文提供了组合物和形成和使用这些组合物的方法，其中组合物包含至少一种式I的低聚物或聚合物，其中E是笼形化合物; 每个Q相同或不同，选自芳基，支链芳基和取代芳基，其中取代基包括氢，卤素，烷基，芳基，取代的芳基，杂芳基，芳基醚，烯基，炔基，烷氧基，羟基烷基，羟基芳基，羟基烯基，羟基炔基，羟基或羧基; A是取代或未取代的具有取代或未取代的芳基炔基的芳基（取代基包括氢，卤素，烷基，苯基或取代的芳基;芳基包括苯基，联苯基，萘基，三联苯基，蒽基，聚亚苯基，聚苯醚或取代的芳基）。 h为0〜10; 我是从0到10; j为0〜10; w为0或1。

4. 发明申请

WO2004041972A2 GAS LAYER FORMATION MATERIALS 审中-公开
标题翻译：气体层形成材料
公开(公告)号：WO2004041972A2
公开(公告)日：2004-05-21
申请号：PCT/US2003/034816
申请日：2003-10-31
申请人： HONEYWELL INTERNATIONAL INC , LI, Bo , ZHOU, De-Ling , NAMAN, Ananth , APEN, Paul
发明人： LI, Bo , ZHOU, De-Ling , NAMAN, Ananth , APEN, Paul
IPC分类号： C10J
CPC分类号： H01L21/02118 , C08G61/02 , C08L65/00 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02282 , H01L21/02318 , H01L21/312 , H01L21/3121 , H01L21/31695 , H01L21/76801 , H01L21/76808 , H01L21/7682 , H01L21/76829 , H01L23/5222 , H01L23/5329 , H01L2221/1036 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.
摘要翻译：本发明提供选自苊烯均聚物的气层形成材料; 苊烯共聚物; 聚（亚芳基醚）; 聚酰胺; B阶多功能丙烯酸酯/甲基丙烯酸酯; 交联苯乙烯二乙烯基苯聚合物; 苯乙烯和二乙烯基苯与马来酰亚胺或双马来酰亚胺的共聚物。形成的气体层用于微芯片和多芯片模块。

5. 发明申请

WO2002081546A1 LOW DIELECTRIC CONSTANT MATERIALS AND METHODS OF PREPARATION THEREOF 审中-公开
标题翻译：低介电常数材料及其制备方法
公开(公告)号：WO2002081546A1
公开(公告)日：2002-10-17
申请号：PCT/US2001/032569
申请日：2001-10-18
申请人： HONEYWELL INTERNATIONAL INC. , APEN, Paul , LAU, Kreisler , LIU, Feng Quan , KOROLEV, Boris , BROUK, Emma , ZHEREBIN, Ruslan , NALEWAJEK, David , LEUNG, Roger
发明人： APEN, Paul , LAU, Kreisler , LIU, Feng Quan , KOROLEV, Boris , BROUK, Emma , ZHEREBIN, Ruslan , NALEWAJEK, David , LEUNG, Roger
IPC分类号： C08G63/78
CPC分类号： C08G61/12 , C07C13/615 , C07C13/64 , C07C15/54 , C07C17/10 , C07C17/269 , C07C2603/74 , C07C2603/90 , C07F7/0809 , C08F238/00 , C08G61/02 , H01L2924/0002 , C07C23/46 , C07C25/22 , H01L2924/00
摘要： The present invention is directed to low dielectric polymers and to methods of producing these low dielectric constant polymers, dielectric materials and layers, and electronic components. In one aspect of the present invention, an isomeric mixture of thermosetting monomers, wherein the monomers have a core structure and a plurality of arms, is provided, and the isomeric mixture of thermosetting monomers is polymerized, wherein polymerization comprises a reaction of an ethynyl group that is located in at least one arm of a monomer. In yet another aspect of the inventive subject matter, spin-on low dielectric constant materials are formed having a first backbone with an aromatic moiety and a first reactive group, and a second backbone with an aromatic moiety and a second reactive group, wherein the first and second backbone are crosslinked via the first and second reactive groups in a crosslinking reaction preferably without an additional crosslinker, and wherein a cage structure having at least eight (8) atoms is covalently bound to at least one of the first and second backbone.
摘要翻译：本发明涉及低介电聚合物以及生产这些低介电常数聚合物，介电材料和层以及电子元件的方法。在本发明的一个方面，提供其中单体具有核心结构和多个臂的热固性单体的异构体混合物，并且热固性单体的异构体混合物聚合，其中聚合包括乙炔基其位于单体的至少一个臂中。在本发明主题的另一方面，形成旋涂低介电常数材料，其具有具有芳族部分和第一反应性基团的第一主链和具有芳族部分和第二反应性基团的第二主链，其中第一并且第二主链在交联反应中通过第一和第二反应性基团交联，优选不含另外的交联剂，并且其中具有至少八个（8）原子的笼结构共价结合至第一和第二主链中的至少一个。

6. 发明公开

EP1570029A2 GAS LAYER FORMATION MATERIALS 审中-公开
标题翻译： GASSCHICHTBILDUNGSMATERIAL
公开(公告)号：EP1570029A2
公开(公告)日：2005-09-07
申请号：EP03786554.0
申请日：2003-10-31
申请人： Honeywell International, Inc.
发明人： LI, Bo , ZHOU, De-Ling , NAMAN, Ananth , APEN, Paul
IPC分类号： C10J1/00
CPC分类号： H01L21/02118 , C08G61/02 , C08L65/00 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02282 , H01L21/02318 , H01L21/312 , H01L21/3121 , H01L21/31695 , H01L21/76801 , H01L21/76808 , H01L21/7682 , H01L21/76829 , H01L23/5222 , H01L23/5329 , H01L2221/1036 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.

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