专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2004041972A2 GAS LAYER FORMATION MATERIALS 审中-公开
标题翻译：气体层形成材料
公开(公告)号：WO2004041972A2
公开(公告)日：2004-05-21
申请号：PCT/US2003/034816
申请日：2003-10-31
申请人： HONEYWELL INTERNATIONAL INC , LI, Bo , ZHOU, De-Ling , NAMAN, Ananth , APEN, Paul
发明人： LI, Bo , ZHOU, De-Ling , NAMAN, Ananth , APEN, Paul
IPC分类号： C10J
CPC分类号： H01L21/02118 , C08G61/02 , C08L65/00 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02282 , H01L21/02318 , H01L21/312 , H01L21/3121 , H01L21/31695 , H01L21/76801 , H01L21/76808 , H01L21/7682 , H01L21/76829 , H01L23/5222 , H01L23/5329 , H01L2221/1036 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.
摘要翻译：本发明提供选自苊烯均聚物的气层形成材料; 苊烯共聚物; 聚（亚芳基醚）; 聚酰胺; B阶多功能丙烯酸酯/甲基丙烯酸酯; 交联苯乙烯二乙烯基苯聚合物; 苯乙烯和二乙烯基苯与马来酰亚胺或双马来酰亚胺的共聚物。形成的气体层用于微芯片和多芯片模块。

2. 发明申请

WO2004027850A1 INTERLAYER ADHESION PROMOTER FOR LOW K MATERIALS 审中-公开
标题翻译：用于低K材料的层间粘合促进剂
公开(公告)号：WO2004027850A1
公开(公告)日：2004-04-01
申请号：PCT/US2002/029975
申请日：2002-09-20
申请人： HONEYWELL INTERNATIONAL, INC. , LU, Victor , LEUNG, Roger, Y. , FAN, Wenya , NAMAN, Ananth , ZHOU, De-Ling
发明人： LU, Victor , LEUNG, Roger, Y. , FAN, Wenya , NAMAN, Ananth , ZHOU, De-Ling
IPC分类号： H01L21/316
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02362 , H01L21/314 , H01L21/31695 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures. The structures of the invention are prepared by adhering a porous dielectric layer to a substantially nonporous capping layer via an intermediate adhesion promoting dielectric layer. A multilayered dielectric structure is prepared which has a porous dielectric layer which has a porosity of about 10% or more; b) an adhesion promoting dielectric layer on the porous dielectric layer which has a porosity of about 10% or less; and a substantially nonporous capping layer on the adhesion promoting dielectric layer.
摘要翻译：本发明涉及多层电介质结构的制造以及包括这些结构的半导体器件和集成电路。本发明的结构通过将多孔电介质层通过中间粘合促进介电层粘附到基本上无孔的覆盖层来制备。制备多层电介质结构，其具有孔隙率为约10％以上的多孔介电层; b）多孔电介质层上的粘附促进介电层，其孔隙率为约10％或更小; 和在粘附促进电介质层上的基本上无孔的覆盖层。

3. 发明申请

WO2004068555A2 REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS 审中-公开
标题翻译：损坏的电介质材料和膜的修复和恢复
公开(公告)号：WO2004068555A2
公开(公告)日：2004-08-12
申请号：PCT/US2004/002252
申请日：2004-01-26
申请人： HONEYWELL INTERNATIONAL INC , FAN, Wenya , LU, Victor , THOMAS, Michael , DANIELS, Brian , NGUYEN, Tiffany , ZHOU, De-Ling , NAMAN, Ananth , JIN, Lei , BHANAP, Anil
发明人： FAN, Wenya , LU, Victor , THOMAS, Michael , DANIELS, Brian , NGUYEN, Tiffany , ZHOU, De-Ling , NAMAN, Ananth , JIN, Lei , BHANAP, Anil
IPC分类号： H01L
CPC分类号： H01L21/31058 , H01L21/3105 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.
摘要翻译：本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。此外，本文描述了用于减少膜和/或缺碳膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

4. 发明申请

WO2010077800A1 BORON-COMPRISING INKS FOR FORMING BORON-DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING NON-CONTACT PRINTING PROCESSES AND MEHTODS FOR FABRICATING SUICH BORON-COMPRISING INKS 审中-公开
标题翻译：用于在使用非接触式印刷工艺和制备用于制造包含含碳硼酸的墨水的半导体基板中形成硼掺杂区域的含硼包覆墨水
公开(公告)号：WO2010077800A1
公开(公告)日：2010-07-08
申请号：PCT/US2009/067828
申请日：2009-12-14
申请人： HONEYWELL INTERNATIONAL INC. , LEUNG, Roger Yu-Kwan , ZHOU, De-Ling , FAN, Wenya
发明人： LEUNG, Roger Yu-Kwan , ZHOU, De-Ling , FAN, Wenya
IPC分类号： C09D11/00
CPC分类号： C09D11/30 , C08G77/20 , C08G77/46 , C09D11/38 , C09D11/52 , H01L21/2225
摘要： Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron- comprising inks are provided. A boron-comprising ink comprises boron from or of a boron- comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 μm, and a boron concentration in a range of from about 1 x 10 19 to 1 x 10 20 atoms/cm 3 .
摘要翻译：提供了使用非接触印刷方法在半导体衬底中形成硼掺杂区域的含硼油墨以及用于制造这种含硼油墨的方法。含硼油墨包含来自含硼材料的硼或扩散最小化添加剂，其导致含硼油墨的扩展因子在约1.5至约6的范围内。含硼油墨具有粘度在约1.5至约50厘泊的范围内，并且当沉积在半导体衬底上时，提供在约10至约100欧姆/平方的范围内的退火后电阻值，后退火掺杂深度约0.1至约1μm的范围，硼浓度在约1×1019至1×1020原子/ cm3的范围内。

5. 发明申请

WO2008147825A2 THERMAL INTERCONNECT AND INTERFACE MATERIALS, METHODS OF PRODUCTION AND USES THEREOF 审中-公开
标题翻译：热互连和界面材料，生产方法及其用途
公开(公告)号：WO2008147825A2
公开(公告)日：2008-12-04
申请号：PCT/US2008/064422
申请日：2008-05-21
申请人： HONEYWELL INTERNATIONAL INC. , WEISER, Martin , BURNHAM, Kikue , ZHOU, De-Ling , LEUNG, Roger , NEDBAL, Jan , RASTOGI, Ravi
发明人： WEISER, Martin , BURNHAM, Kikue , ZHOU, De-Ling , LEUNG, Roger , NEDBAL, Jan , RASTOGI, Ravi
IPC分类号： H01L23/373 , C09K5/14
CPC分类号： C09K5/14 , H01L23/3737 , H01L23/42 , H01L2224/2929 , H01L2224/293 , H01L2224/32245 , H01L2924/09701 , H01L2924/12044 , H01L2924/3011 , H01L2924/0665 , H01L2924/00
摘要： Thermal interface materials are disclosed that include at least one matrix material component, at least one high conductivity filler component, at least one solder material; and at least one material modification agent, wherein the at least one material modification agent improves the thermal performance, compatibility, physical quality or a combination thereof of the thermal interface material. Methods of forming thermal interface materials are also disclosed that include providing each of the at least one matrix material component, at least one high conductivity filler, at least one solder material and at least one material modification agent, blending the components; and optionally curing the components pre- or post-application of the thermal interface material to the surface, substrate or component. Also, thermal interface materials are disclosed that include at least one matrix material component, at least one high conductivity filler component, at least one solder material; and at least one material modification agent, wherein the at least one material modification agent at least one modified thermal filler profile.
摘要翻译：公开了热界面材料，其包括至少一种基质材料组分，至少一种高电导率填料组分，至少一种焊料材料; 和至少一种材料改性剂，其中所述至少一种材料改性剂改善所述热界面材料的热性能，相容性，物理质量或其组合。还公开了形成热界面材料的方法，其包括提供至少一种基质材料组分，至少一种高电导率填料，至少一种焊料材料和至少一种材料改性剂中的每一种，混合组分; 并且可选地将热界面材料预施加或后施加到表面，基材或组分上固化。此外，公开了热界面材料，其包括至少一种基体材料组分，至少一种高电导率填料组分，至少一种焊料材料; 和至少一种材料改性剂，其中所述至少一种材料改性剂至少一种改性的热填料型材。

6. 发明申请

WO2010017123A3 METHODS FOR FORMING DOPED REGIONS IN A SEMICONDUCTOR MATERIAL 审中-公开
公开(公告)号：WO2010017123A3
公开(公告)日：2010-02-11
申请号：PCT/US2009/052546
申请日：2009-08-03
申请人： HONEYWELL INTERNATIONAL INC. , LEUNG, Roger Yu-Kwan , ZHOU, De-Ling , FAN, Wenya
发明人： LEUNG, Roger Yu-Kwan , ZHOU, De-Ling , FAN, Wenya
IPC分类号： H01L21/265 , H01L31/042
摘要： Methods for forming doped regions in a semiconductor material that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material and methods for fabricating semiconductor devices that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material are provided. In one exemplary embodiment, a method for forming doped regions in a semiconductor material comprises depositing a conductivity-determining type dopant comprising a dopant element overlying a first portion of the semiconductor material. A diffusion barrier material is applied such that it overlies a second portion of the semiconductor material. The dopant element of the conductivity-determining type dopant is diffused into the first portion of the semiconductor material.

7. 发明申请

WO2005043250A2 PROCESS FOR THE USE OF BIS-CHOLINE AND TRIS-CHOLINE IN THE CLEANING OF QUARTZ-COATED POLYSILICON AND OTHER MATERIALS 审中-公开
标题翻译：双氯硅烷和三氯硅烷在清洁涂层的多晶硅和其他材料中的应用方法
公开(公告)号：WO2005043250A2
公开(公告)日：2005-05-12
申请号：PCT/US2004/035148
申请日：2004-10-22
申请人： EKC TECHNOLOGY, INC. , CHARM, Richard, William , ZHOU, De-Ling , SMALL, Robert, J. , LEE, Shihying
发明人： CHARM, Richard, William , ZHOU, De-Ling , SMALL, Robert, J. , LEE, Shihying
IPC分类号： G03F7/42
CPC分类号： G03F7/425 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/426
摘要： A new cleaning chemistry based on bis-choline and tris-choline compounds, such as their hydroxides, is provided in order to address the removal of photoresist and flux while minimizing any etching of the substrate.
摘要翻译：提供了基于双胆碱和三胆碱化合物（例如它们的氢氧化物）的新的清洁化学品，以便解决光刻胶和助熔剂的去除，同时最小化衬底的任何蚀刻。

8. 发明公开

EP1570029A2 GAS LAYER FORMATION MATERIALS 审中-公开
标题翻译： GASSCHICHTBILDUNGSMATERIAL
公开(公告)号：EP1570029A2
公开(公告)日：2005-09-07
申请号：EP03786554.0
申请日：2003-10-31
申请人： Honeywell International, Inc.
发明人： LI, Bo , ZHOU, De-Ling , NAMAN, Ananth , APEN, Paul
IPC分类号： C10J1/00
CPC分类号： H01L21/02118 , C08G61/02 , C08L65/00 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02282 , H01L21/02318 , H01L21/312 , H01L21/3121 , H01L21/31695 , H01L21/76801 , H01L21/76808 , H01L21/7682 , H01L21/76829 , H01L23/5222 , H01L23/5329 , H01L2221/1036 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.

9. 发明公开

EP2370532A1 BORON-COMPRISING INKS FOR FORMING BORON-DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING NON-CONTACT PRINTING PROCESSES AND MEHTODS FOR FABRICATING SUICH BORON-COMPRISING INKS 审中-公开
标题翻译：含硼墨成形硼掺杂区在半导体衬底中通过非接触印刷和用于制备这种BORONHALTIGER INKS
公开(公告)号：EP2370532A1
公开(公告)日：2011-10-05
申请号：EP09836799.8
申请日：2009-12-14
申请人： Honeywell International Inc.
发明人： LEUNG, Roger Yu-Kwan , ZHOU, De-Ling , FAN, Wenya
IPC分类号： C09D11/00
CPC分类号： C09D11/30 , C08G77/20 , C08G77/46 , C09D11/38 , C09D11/52 , H01L21/2225
摘要： Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron- comprising inks are provided. A boron-comprising ink comprises boron from or of a boron- comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 μm, and a boron concentration in a range of from about 1 x 10
19 to 1 x 10
20 atoms/cm
3 .

10. 发明公开

EP1543549A1 INTERLAYER ADHESION PROMOTER FOR LOW K MATERIALS 审中-公开
标题翻译：过渡层的赔偿责任对于低介电常数材料改善
公开(公告)号：EP1543549A1
公开(公告)日：2005-06-22
申请号：EP02792179.0
申请日：2002-09-20
申请人： Honeywell International, Inc.
发明人： LU, Victor , LEUNG, Roger, Y. , FAN, Wenya , NAMAN, Ananth , ZHOU, De-Ling
IPC分类号： H01L21/316
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02362 , H01L21/314 , H01L21/31695 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures. The structures of the invention are prepared by adhering a porous dielectric layer to a substantially nonporous capping layer via an intermediate adhesion promoting dielectric layer. A multilayered dielectric structure is prepared which has a porous dielectric layer which has a porosity of about 10% or more; b) an adhesion promoting dielectric layer on the porous dielectric layer which has a porosity of about 10% or less; and a substantially nonporous capping layer on the adhesion promoting dielectric layer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式