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1. 发明申请

WO2002081546A1 LOW DIELECTRIC CONSTANT MATERIALS AND METHODS OF PREPARATION THEREOF 审中-公开
标题翻译：低介电常数材料及其制备方法
公开(公告)号：WO2002081546A1
公开(公告)日：2002-10-17
申请号：PCT/US2001/032569
申请日：2001-10-18
申请人： HONEYWELL INTERNATIONAL INC. , APEN, Paul , LAU, Kreisler , LIU, Feng Quan , KOROLEV, Boris , BROUK, Emma , ZHEREBIN, Ruslan , NALEWAJEK, David , LEUNG, Roger
发明人： APEN, Paul , LAU, Kreisler , LIU, Feng Quan , KOROLEV, Boris , BROUK, Emma , ZHEREBIN, Ruslan , NALEWAJEK, David , LEUNG, Roger
IPC分类号： C08G63/78
CPC分类号： C08G61/12 , C07C13/615 , C07C13/64 , C07C15/54 , C07C17/10 , C07C17/269 , C07C2603/74 , C07C2603/90 , C07F7/0809 , C08F238/00 , C08G61/02 , H01L2924/0002 , C07C23/46 , C07C25/22 , H01L2924/00
摘要： The present invention is directed to low dielectric polymers and to methods of producing these low dielectric constant polymers, dielectric materials and layers, and electronic components. In one aspect of the present invention, an isomeric mixture of thermosetting monomers, wherein the monomers have a core structure and a plurality of arms, is provided, and the isomeric mixture of thermosetting monomers is polymerized, wherein polymerization comprises a reaction of an ethynyl group that is located in at least one arm of a monomer. In yet another aspect of the inventive subject matter, spin-on low dielectric constant materials are formed having a first backbone with an aromatic moiety and a first reactive group, and a second backbone with an aromatic moiety and a second reactive group, wherein the first and second backbone are crosslinked via the first and second reactive groups in a crosslinking reaction preferably without an additional crosslinker, and wherein a cage structure having at least eight (8) atoms is covalently bound to at least one of the first and second backbone.
摘要翻译：本发明涉及低介电聚合物以及生产这些低介电常数聚合物，介电材料和层以及电子元件的方法。在本发明的一个方面，提供其中单体具有核心结构和多个臂的热固性单体的异构体混合物，并且热固性单体的异构体混合物聚合，其中聚合包括乙炔基其位于单体的至少一个臂中。在本发明主题的另一方面，形成旋涂低介电常数材料，其具有具有芳族部分和第一反应性基团的第一主链和具有芳族部分和第二反应性基团的第二主链，其中第一并且第二主链在交联反应中通过第一和第二反应性基团交联，优选不含另外的交联剂，并且其中具有至少八个（8）原子的笼结构共价结合至第一和第二主链中的至少一个。

2. 发明申请

WO2004000909A1 COMPOSITIONS AND METHODS FOR THERMOSETTING MOLECULES IN ORGANIC COMPOSITIONS 审中-公开
标题翻译：用于热分解有机组合物的组合物和方法
公开(公告)号：WO2004000909A1
公开(公告)日：2003-12-31
申请号：PCT/US2003/016450
申请日：2003-05-22
申请人： HONEYWELL INTERNATIONAL INC. , LAU, Kreisler , LIU, Feng Quan , KOROLEV, Boris , BROUK, Emma , ZHEREBIN, Ruslan , NALEWAJEK, David
发明人： LAU, Kreisler , LIU, Feng Quan , KOROLEV, Boris , BROUK, Emma , ZHEREBIN, Ruslan , NALEWAJEK, David
IPC分类号： C08G63/78
CPC分类号： C08G61/02 , C08G61/12 , C08G65/40 , C08G2650/60
摘要： In a method of producing a low dielectric constant polymer, a thermosetting monomer is provided, wherein the thermosetting monomer has a cage compound or aryl core structure, and a plurality of arms that are covalently bound to the cage compound or core structure. In a subsequent step, the thermosetting monomer is incorporated into a polymer to form the low dielectric constant polymer, wherein the incorporation into the polymer comprises a chemical reaction of a triple bond that is located in at least one of the arms. Contemplated cage compounds and core structures include adamantane, diamantane, silicon, a phenyl group and a sexiphenylene group, while preferred arms include an arylene, a branched arylene, and an arylene ether. The thermosetting monomers may advantageously be employed to produce low-k dielectric material in electronic devices, and the dielectric constant of the polymer can be controlled by varying the overall length of the arms.
摘要翻译：在制备低介电常数聚合物的方法中，提供了一种热固性单体，其中该热固性单体具有笼形化合物或芳基核心结构，以及共价结合笼形化合物或核心结构的多个臂。在随后的步骤中，将热固性单体引入聚合物中以形成低介电常数聚合物，其中掺入聚合物中包含位于至少一个臂中的三键的化学反应。考虑的笼状化合物和核心结构包括金刚烷，二金刚烷，硅，苯基和亚噻吩基，而优选的臂包括亚芳基，支链亚芳基和亚芳基醚。热固性单体可以有利地用于在电子器件中产生低k介电材料，并且聚合物的介电常数可以通过改变臂的整个长度来控制。

3. 发明申请

WO2003098680A1 CHEMICAL MECHANICAL PLANARIZATION OF LOW DIELECTRIC CONSTANT MATERIALS 审中-公开
标题翻译：低介电常数材料的化学机械平面化
公开(公告)号：WO2003098680A1
公开(公告)日：2003-11-27
申请号：PCT/US2003/015224
申请日：2003-05-13
申请人： HONEYWELL INTERNATIONAL INC. , ZHANG, Fan , TOWERY, Daniel , LIU, Feng Quan
发明人： ZHANG, Fan , TOWERY, Daniel , LIU, Feng Quan
IPC分类号： H01L21/461
CPC分类号： C09K3/1472 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/31053 , H01L21/31058
摘要： The present invention relates to apparatus, procedures, and compositions for avoiding and reducing damage to low dielectric constant materials and other soft materials, such as Cu and Al, used in fabricating semiconductor devices. Damage reduction can be achieved by decreasing the role of mechanical abrasion in the CMP of these materials and increasing the role of chemical polishing, which can improve material removal rates. Increasing the role of chemical polishing can be accomplished by creating a polishing slurry, (5) which contains components that interact chemically with the surface (1) to be polished. This slurry (5) may or may not also contain soft abrasive particles, which replace the hard abrasive particles of conventional slurries. Use of soft abrasive particles can reduce the role of mechanical abrasion in the CMP process. Use of this slurry (5) in CMP can reduce surface scratches and device damage.
摘要翻译：本发明涉及用于避免和减少用于制造半导体器件的低介电常数材料和其它软材料（例如Cu和Al）的损伤的装置，程序和组合物。通过减少这些材料的CMP中的机械磨损的作用并增加化学抛光的作用可以减少损伤，这可以提高材料去除率。增加化学抛光的作用可以通过产生抛光浆料（5）来实现，该抛光浆料包含与要抛光的表面（1）化学反应的成分。该浆料（5）可以含有也可以不含有软磨料颗粒，其代替常规浆料的硬磨料颗粒。使用软磨粒可以减少CMP工艺中机械磨损的作用。在CMP中使用这种浆料（5）可以减少表面划痕和器件损坏。

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