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1. 发明专利

JP2009114874A Liquid pressure control device 审中-公开
标题翻译：液压控制装置
公开(公告)号：JP2009114874A
公开(公告)日：2009-05-28
申请号：JP2007285831
申请日：2007-11-02
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIROSE TAKESHI , TAKAHASHI HIDEAKI
IPC分类号： F04B9/04 , B60T8/34 , B60T17/02 , F04B53/18
摘要： PROBLEM TO BE SOLVED: To provide a liquid pressure control device securing a capacity for reserving hydraulic fluid leaked from a pump, and capable of reducing the man-hours needed for fabrication, regarding a housing in a liquid pressure control device provided with a plunger pump. SOLUTION: A liquid pressure control device is provided with a cam 13 for reciprocating a plunger pump P connected to an electric motor M, and a cam chamber 13a for containing the cam 13. A cover 50 for storing a valve is provided in the housing 10, and a liquid reservoir 53 is provided in the cover 50. Further, an oil passage 60 which communicates the liquid reservoir 53 for reserving hydraulic fluid leaked from the cam chamber 13a with the cam chamber 13a is provided in the housing 10. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种液压控制装置，其确保了用于储存从泵泄漏的液压油的能力，并且能够减少制造所需的工时，涉及设置有液压控制装置的壳体柱塞泵。解决方案：液压控制装置设置有用于使连接到电动机M的柱塞泵P往复运动的凸轮13和用于容纳凸轮13的凸轮室13a。用于存储阀的盖50设置在壳体10和液体储存器53设置在盖50中。此外，在壳体10中设置有用于将液体储存器53连通以将从凸轮室13a泄漏的液压流体与凸轮室13a连通的油路60。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2004191266A Measuring method of film thickness and apparatus thereof, manufacturing method of thin-film device using apparatus, and manufacturing apparatus of the apparatus 审中-公开
公开(公告)号：JP2004191266A
公开(公告)日：2004-07-08
申请号：JP2002361595
申请日：2002-12-13
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SASAZAWA HIDEAKI , HIROSE TAKESHI , SAITOU KEIYA , NOMOTO MINEO
IPC分类号： G01B11/06 , B24B37/013 , H01L21/304 , H01L21/66 , B24B37/04
摘要： PROBLEM TO BE SOLVED: To provide a method for measuring a film thickness even for a minute pattern before CMP (chemical mechanical polishing) by optimizing a surface structure and an optical model, and also to provide its apparatus, a manufacturing method of a thin film device using it and its manufacturing apparatus. SOLUTION: Film thickness can be measured with a means for detecting a spectral waveform of positive reflected light of an object to be measured, a means for modelling the surface state of the object to be measured and calculating the reflected light, and a means for calculating the film thickness of the object to be measured by the detected waveform and calculated waveform. In addition, the apparatus has the function of monitoring a process and the state of the manufacturing apparatus from wafer in-plane distribution of the measured film thickness. COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2004144587A Method for inspecting film thickness of thin-film device, and method for manufacturing the thin-film device using the method 有权
公开(公告)号：JP2004144587A
公开(公告)日：2004-05-20
申请号：JP2002309115
申请日：2002-10-24
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIROSE TAKESHI , BABA SHUICHI , NOMOTO MINEO
IPC分类号： G01B11/02 , G01B11/06 , H01L21/66
CPC分类号： G01B11/0625 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To appropriately and quickly determine a position for performing each inspection to efficiently inspect film thickness or CMP machining residue in a wafer, through hole machining remainder, and the like in an inspection method of a thin-film device and a manufacturing method of a semiconductor device. SOLUTION: In the method for inspecting the film thickness of an optically transparent thin film formed on the surface of the thin-film device during the manufacturing process of the thin-film device, a position for managing the film thickness of the optically transparent thin film is preset. The film thickness of the optically transparent thin film at the set position is obtained by detecting the reflection light of light applied to the thin film, and the obtained film thickness value is compared with a preset management value, thus inspecting the film thickness of the optically transparent thin film, and hence automatically setting appropriate inspection conditions without requiring any skill. Additionally, by using this sort of method enables an appropriate process management andan improvement in yields and throughput. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2010164438A Spectroscopic detection method, apparatus thereof, defect inspection method using same, and apparatus thereof 有权
标题翻译：光谱检测方法，其装置，使用其的缺陷检查方法及其装置
公开(公告)号：JP2010164438A
公开(公告)日：2010-07-29
申请号：JP2009007160
申请日：2009-01-16
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIROSE TAKESHI , YOSHIDA MINORU , SASAZAWA HIDEAKI , YOSHITAKE YASUHIRO
IPC分类号： G01N21/95 , G01B11/30
CPC分类号： G01J3/02 , G01B2210/56 , G01J3/0208 , G01J3/021 , G01J3/0229 , G01N21/95607
摘要： PROBLEM TO BE SOLVED: To solve the following problem that an optical system of a relatively simple constitution and capable of spectroscopic detection of a wide wavelength range including a short wavelength region, in other words, an ultraviolet region can not have been easily achieved in view of the fact that a wide wavelength range for spectroscopic detection in a short wavelength region is advantageous for detecting the shape of a repetitive pattern uniformly formed in a surface to be inspected through the use of a spectroscopic detection technique.
SOLUTION: A pattern defect inspection apparatus is provided with a spectroscopic detection optical system capable of detection in deep-ultraviolet to near-infrared wavelength bands by using a spatially partial mirror 1702 as a half mirror and installing an aperture stop 1710 in a reflection type object lens for restricting the irradiation of an object to be inspected with light and the angle and direction of detection of reflected light from the object to be inspected.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了解决以下问题，即，具有相对简单结构并能够对包括短波长区域的宽波长范围进行光谱检测的光学系统，换句话说，紫外线区域的光学系统不容易考虑到通过使用光谱检测技术在短波长区域中用于光谱检测的宽波长范围有利于检测均匀形成在待检查表面中的重复图案的形状。解决方案：图案缺陷检查装置设置有能够通过使用空间部分反射镜1702作为半反射镜在深紫外至近红外波长带中检测的光谱检测光学系统，并将孔径光阑1710安装在用于限制被检查对象的照射的反射型物镜以及检测来自被检体的反射光的角度和方向。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2005159203A Thickness measuring method and its instrument, polishing rate calculating method, and cpm processing method and its apparatus 审中-公开
标题翻译：厚度测量方法及其仪器，抛光速率计算方法和CPM处理方法及其设备
公开(公告)号：JP2005159203A
公开(公告)日：2005-06-16
申请号：JP2003398609
申请日：2003-11-28
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： SAITOU KEIYA , NOMOTO MINEO , SASAZAWA HIDEAKI , HIROSE TAKESHI
IPC分类号： G01B11/02 , B24B37/07 , B24B49/12 , G01B11/30 , H01L21/304 , H01L21/66 , B24B37/04
摘要： PROBLEM TO BE SOLVED: To obtain a polishing rate with high precision for a sample, which has unevenness on its surface, differs in size of the unevenness with the density of a wiring pattern and filming conditions, and varies in polishing rate, without conditioning a wafer. SOLUTION: An embodiment of the present invention includes a detection spectral light waveform acquiring step of irradiating the sample which has an optically transparent film formed on its surface, with white light, detecting reflected light from the sample surface by the irradiation with the white light, and acquiring the detection spectral waveform of light of (0)th order of the reflected light, a model spectral waveform calculation step of calculating a model spectral waveform based upon an optical model for the sample having surface unevenness constituted by putting together a plurality of step parts differing in height while parameters consisting of the size of the unevenness of the surface, an area rate, and a film thickness are varied, and a fitting processing step of performing fitting processing between the model spectral waveform calculated in the model spectral waveform calculation step while the parameters are varied and the detection spectral waveform acquired in the detection spectrum waveform acquiring step and finding the size of the unevenness of the surface, area rate, and film thickness of the sample based upon the most matching parameters. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题为了获得具有表面不均匀性的样品的高精度的抛光速率，在布线图案的密度和成膜条件下，不均匀性的尺寸不同，并且抛光速率变化，不调理晶片。解决方案：本发明的实施例包括检测光谱光波形获取步骤，用于在其表面上形成有光学透明膜的样品用白光照射，通过照射来检测来自样品表面的反射光白光，并获取反射光的（0）次的光的检测光谱波形;模型光谱波形计算步骤，基于具有表面凹凸的样品的光学模型来计算模型光谱波形，所述光学模型通过将改变由表面的不均匀性，面积率和膜厚构成的参数的高度不同的多个台阶部分，以及拟合处理步骤，在模型光谱中计算出的模型光谱波形之间进行拟合处理波形计算步骤，参数变化和检测光谱波形在de 根据最匹配的参数，求出样品的表面不均匀度，面积率和膜厚度的大小。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004191107A Film thickness measuring method and its device 审中-公开
标题翻译：薄膜厚度测量方法及其设备
公开(公告)号：JP2004191107A
公开(公告)日：2004-07-08
申请号：JP2002357413
申请日：2002-12-10
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SAITOU KEIYA , SASAZAWA HIDEAKI , HIROSE TAKESHI , NOMOTO MINEO
IPC分类号： G01B11/06 , G01B11/30 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method for measuring film thickness highly accurately based on a spectral waveform of reflected light from a device having an optional shape having large irregularities on the sample surface after deposition or after CMP (Chemical Mechanical Polishing) processing. SOLUTION: When measuring the film thickness after deposition or after CMP processing, spectral waveforms of reflected light and zero-order light of the reflected light are detected simultaneously, and the degree of the irregularities on the sample surface is calculated. Each waveform correction is performed relative to the spectral waveform of the reflected light and the spectral waveform of the zero-order light at the calculation time of the film thickness, and the correlation of the spectral waveforms after waveform correction is calculated. When a correlation value is large, the film thickness is determined by the frequency and phase analysis. When the correlation value is small, since there is some possibility that an influence of the irregularities on the surface is not removed by the waveform correction, a film thickness measuring system of another system such as fitting is applied. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种基于在沉积后或CMP（化学机械抛光）之后的样品表面上具有大的不规则性的任选形状的器件的反射光的光谱波形高精度地测量膜厚度的方法，处理。解决方案：在沉积后或CMP处理后测量膜厚度时，同时检测反射光的光谱波形和反射光的零级光，并计算样品表面上的不规则度。在膜厚的计算时刻，相对于反射光的光谱波形和零级光的光谱波形进行各波形修正，并计算波形校正后的光谱波形的相关性。当相关值大时，通过频率和相位分析确定膜厚度。当相关值小时，由于通过波形校正不能消除表面上的不规则性的影响的一些可能性，所以应用了诸如配合的另一系统的膜厚测量系统。版权所有（C）2004，JPO＆NCIPI

7. 发明专利

JP2003338493A Method and equipment for inspecting metal film remaining after machining and method for fabricating thin film device using it 有权
标题翻译：用于检查加工后的金属膜的方法和设备以及使用其制造薄膜装置的方法
公开(公告)号：JP2003338493A
公开(公告)日：2003-11-28
申请号：JP2002146372
申请日：2002-05-21
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： BABA SHUICHI , NOMOTO MINEO , HIROSE TAKESHI , SAWA SHINJI
IPC分类号： B24B37/013 , H01L21/02 , H01L21/304 , H01L21/3065 , B24B37/04
CPC分类号： G01N21/55
摘要： PROBLEM TO BE SOLVED: To inspect a patterned thin metal film remaining after planarization automatically and accurately. SOLUTION: A sample mixture of an optically transparent thin film and a thin metal film is irradiated with light, reflected light from the sample is detected and a decision is made whether the metal film remains after CMP or not based on the intensity of the reflected light thus detected or the reflectivity. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：自动准确地检查平坦化后残留的图案化的金属薄膜。解决方案：用光照射光学透明薄膜和薄金属薄膜的样品混合物，检测来自样品的反射光，并且基于CMP的强度确定金属膜是否保持在CMP之后所检测到的反射光或反射率。版权所有（C）2004，JPO

8. 发明专利

JP2009150832A Method and device for inspecting pattern on hard disk medium 有权
标题翻译：用于检查硬盘上的图案的方法和装置
公开(公告)号：JP2009150832A
公开(公告)日：2009-07-09
申请号：JP2007330482
申请日：2007-12-21
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIROSE TAKESHI , WATANABE MASAHIRO , YOSHITAKE YASUHIRO
IPC分类号： G01B11/24 , G01B11/30 , G01N21/27 , G01N21/95
CPC分类号： G11B5/82 , B82Y10/00 , G01N21/55 , G01N21/95607 , G01N2021/95615 , G11B5/743 , G11B5/855 , G11B20/18 , G11B2220/2516
摘要： PROBLEM TO BE SOLVED: To solve the problems wherein, if an inspection method for a patterned medium is intended for the nanoimprint process control, it is necessary to measure a correct shape of each pattern, and at the same time, if the inspection method is intended for the quality control of products, it is necessary to inspect all products, however, the conventional method which uses SEM or AFM cannot satisfy these requirements.
SOLUTION: Light including a plurality of wavelengths is irradiated onto a surface of a hard disk media, on which a magnetic material pattern is formed, and the intensity of reflected light from the hard disk media is detected relative to each wavelength (S102). Then, a spectral reflectance is calculated from the detected intensity of the reflected light (S104), and a shape of each pattern formed on the hard disk media is detected based on the calculated spectral reflectance (S110).
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题为了解决如果对于图案化介质的检查方法用于纳米压印处理控制的问题，则需要测量每个图案的正确形状，并且同时如果检验方法是为了产品的质量控制，有必要检查所有产品，然而，采用SEM或AFM的传统方法不能满足这些要求。解决方案：将包括多个波长的光照射到形成有磁性材料图案的硬盘介质的表面上，并且相对于每个波长检测来自硬盘介质的反射光的强度（S102 ）。然后，根据检测到的反射光的强度计算出光谱反射率（S104），并且基于所计算的光谱反射率来检测形成在硬盘介质上的各图案的形状（S110）。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2003042721A Method and apparatus for measurement of film thickness of thin film as well as method of manufacturing device by using the same 有权
标题翻译：用于测量薄膜的薄膜厚度的方法和装置，作为使用该薄膜的制造装置的方法
公开(公告)号：JP2003042721A
公开(公告)日：2003-02-13
申请号：JP2001226984
申请日：2001-07-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NOMOTO MINEO , HIROSE TAKESHI , SAITOU KEIYA
IPC分类号： B24B37/013 , B24B49/12 , G01B11/06 , G01N21/84 , H01L21/304 , H01L21/3205 , H01L21/321 , H01L21/768 , B24B37/04
CPC分类号： B24B37/013 , B24B49/12 , G01B11/0683 , G01N21/55 , G01N21/8422
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus of manufacturing a high-accuracy thin-film device wherein the film thickness of a transparent film being worked and the distribution of the film thickness are measured with high accuracy, the film thickness on the outermost surface is measured with high accuracy during a CMP working operation, without being influenced by the distribution of the film thickness in an LSI region generated in the CMP working operation or inside a semiconductor wafer face, and the film thickness can be controlled with high accuracy. SOLUTION: A visual field and a measuring position which are used to measure the film thickness of the transparent film being worked are measured by an area which is not influenced by the distribution of the film thickness of an CMP-worked actual device pattern. A comparatively flat region is specified on the basis of the reflected light intensity, the frequency spectrum intensity or the like in a feature amount of spectral reflected light from the transparent film, the film thickness is measured, and the film thickness is controlled with high accuracy. Consequently, a flattening working operation in a CMP working process based on the distribution of the film thickness can be optimized, a film formation condition to a film formation process and a working condition in an etching process can be optimized, and the semiconductor device is manufactured with high accuracy.
摘要翻译：要解决的问题：为了提供一种制造高精度薄膜器件的方法和装置，其中正在加工的透明膜的膜厚度和膜厚度的分布以高精度测量，膜厚度在CMP工作操作期间以高精度测量最外表面，而不受在CMP工作操作中产生的LSI区域或半导体晶片面内的膜厚度的分布的影响，并且可以以高精度控制膜厚度。解决方案：用于测量正在加工的透明膜的膜厚度的视野和测量位置通过不受CMP加工的实际器件图案的膜厚度分布影响的面积来测量。基于来自透明膜的光谱反射光的特征量中的反射光强度，频谱强度等来指定相对平坦的区域，测量膜厚度，并且以高精度控制膜厚度。因此，可以优化基于膜厚分布的CMP工作过程中的平坦化工作操作，可以优化成膜过程中的成膜条件和蚀刻工艺中的工作条件，并且制造半导体器件准确度高。

10. 发明专利

JP2005150340A Method and device for specifying etching condition 审中-公开
标题翻译：用于指定蚀刻条件的方法和装置
公开(公告)号：JP2005150340A
公开(公告)日：2005-06-09
申请号：JP2003384818
申请日：2003-11-14
申请人： Hitachi Kenki Fine Tech Co Ltd , Hitachi Ltd , 日立建機ファインテック株式会社 , 株式会社日立製作所
发明人： WATANABE MASAHIRO , HIROSE TAKESHI , KENBO YUKIO , NAGANO YOSHIYUKI , MORIMOTO TAKASHI
IPC分类号： H01L21/28 , G01B3/22 , G01B11/06 , G01N13/16 , G12B21/08 , H01L21/3065 , H01L21/66 , H01L21/768 , H01L23/522
CPC分类号： G01Q30/02 , G01B11/0625 , G01Q30/04
摘要： PROBLEM TO BE SOLVED: To enable the amount of overetching to be quantitatively measured in a non-destructive manner in an interconnect line hole process. SOLUTION: An etching pattern is provided on a stopper pattern and a region that is adjacent to and outside the stopper pattern, the depths of the etching patterns provided to the stopper pattern and the region respectively are measured with a probe and compared with each other to measure the amount of overetching, and the etching conditions are specified and monitored by the use of the amount of over etching. COPYRIGHT: (C)2005,JPO&NCIPI

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