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1. 发明授权

US07242015B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US07242015B2
公开(公告)日：2007-07-10
申请号：US11234197
申请日：2005-09-26
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： H01J37/153 , H01J37/30
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

2. 发明申请

US20060017014A1 Patterned wafer inspection method and apparatus therefor 有权
公开(公告)号：US20060017014A1
公开(公告)日：2006-01-26
申请号：US11234197
申请日：2005-09-26
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： G21G5/00
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

3. 发明授权

US06979823B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US06979823B2
公开(公告)日：2005-12-27
申请号：US10865850
申请日：2004-06-14
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： G01N23/20 , G01N23/225 , G01Q20/02 , G01Q30/02 , G01Q30/04 , G01Q30/20 , H01J37/26 , H01L21/027 , H01L21/66 , H01J37/244
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

4. 发明授权

US06797954B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US06797954B2
公开(公告)日：2004-09-28
申请号：US10400588
申请日：2003-03-28
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： H01J37244
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

5. 发明授权

US06476390B1 Method and apparatus for inspecting integrated circuit pattern using a plurality of charged particle beams 有权
标题翻译：使用多个带电粒子束检查集成电路图案的方法和装置
公开(公告)号：US06476390B1
公开(公告)日：2002-11-05
申请号：US09646281
申请日：2000-09-15
申请人： Hisaya Murakoshi , Yusuke Yajima , Hiroyuki Shinada , Mari Nozoe , Atsuko Takafuji , Kaoru Umemura , Masaki Hasegawa , Katsuhiro Kuroda
发明人： Hisaya Murakoshi , Yusuke Yajima , Hiroyuki Shinada , Mari Nozoe , Atsuko Takafuji , Kaoru Umemura , Masaki Hasegawa , Katsuhiro Kuroda
IPC分类号： G01N2300
CPC分类号： H01J37/28 , G01N23/225 , G01N23/2255 , H01J2237/16 , H01J2237/18 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In a pattern inspection device of the present invention having at least three electron-optical systems, detection signals approximately simultaneously obtained from identical circuit patterns are compared with each other. Further, areas around plural electron sources can be maintained at high degrees of vacuum by evacuating an electron gun chamber mounted with plural electron guns independently of a sample chamber. Further, electric fields and magnetic fields are confined in each electron-optical system by a shield electrode which makes it possible to evacuate an electron beam path to a high degree of vacuum, and at the same time, secondary electrons and reflected electrons are detected in the same electron-optical system by setting the samples to a negative voltage and accelerating secondary electrons and reflected electrons toward the electron source side in the direction of the electron beam axis. Thus, defect determination in pattern inspection is performable substantially simultaneously, and at the same time, the throughput of the inspections is improvable in proportion to the number of the electron-optical systems. Further, three or more electron sources are operable in a stable manner in high vacuum states, and signals from closely arranged electron-optical systems are detectable with high accuracy, and accurate inspections are performable.
摘要翻译：在具有至少三个电子 - 光学系统的本发明的图案检查装置中，将从相同电路图形大致同时获得的检测信号彼此进行比较。此外，通过与安装有多个电子枪的电子枪室独立于样品室排出，可以将多个电子源周围的区域保持在高真空度。此外，通过屏蔽电极将电场和磁场限制在每个电子 - 光学系统中，该屏蔽电极使得可以将电子束路径排出到高真空度，同时二次电子和反射电子被检测到相同的电子 - 光学系统通过将样品设置为负电压并且在电子束轴的方向上将二次电子和反射电子加速朝向电子源侧。因此，图案检查中的缺陷确定可以基本上同时执行，并且同时，检查的吞吐量可以与电子 - 光学系统的数量成比例地改善。此外，三个或更多个电子源可以以高真空状态稳定地操作，并且来自紧密排列的电子 - 光学系统的信号可以高精度地检测，并且可以进行准确的检查。

6. 发明授权

US08431891B2 Dual beam apparatus with tilting sample stage 有权
标题翻译：具有倾斜样品台的双光束装置
公开(公告)号：US08431891B2
公开(公告)日：2013-04-30
申请号：US12731910
申请日：2010-03-25
申请人： Hiroyasu Shichi , Satoshi Tomimatsu , Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
发明人： Hiroyasu Shichi , Satoshi Tomimatsu , Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01J37/261 , H01J37/20 , H01J37/3045 , H01J2237/08 , H01J2237/20207 , H01J2237/24528 , H01J2237/28 , H01J2237/31713 , H01J2237/3174 , H01J2237/31749
摘要： An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.
摘要翻译：一种离子束处理装置，包括：将矩形离子束照射到保持在第一样品台上的样品的离子束照射光学系统，向样品照射电子束的电子束照射光学系统;以及第二样品台，通过探针从样品中提取的试片被安装。离子束的照射角度可以通过使第二样品台围绕倾斜轴旋转来倾斜。控制器控制表示矩形离子束在与第二样品台的倾斜轴投射到第二样品台表面上的第一方向垂直的方向上的强度分布的偏斜宽度，使得宽度将小于在平行于第一方向的方向上表示离子束的另一边缘的强度分布的偏斜宽度。

7. 发明申请

US20110114476A1 Method and apparatus for specimen fabrication 有权
公开(公告)号：US20110114476A1
公开(公告)日：2011-05-19
申请号：US12929396
申请日：2011-01-20
申请人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
发明人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
IPC分类号： C23C14/34
CPC分类号： G01N23/20 , B23K15/0006 , B23K15/0013 , G01N1/286 , H01J2237/3114 , H01J2237/31745
摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

8. 发明授权

US07435972B2 Focused ion beam apparatus and liquid metal ion source 失效
标题翻译：聚焦离子束装置和液态金属离子源
公开(公告)号：US07435972B2
公开(公告)日：2008-10-14
申请号：US11714235
申请日：2007-03-06
申请人： Yuichi Madokoro , Shigeru Izawa , Kaoru Umemura , Hiroyasu Kaga
发明人： Yuichi Madokoro , Shigeru Izawa , Kaoru Umemura , Hiroyasu Kaga
IPC分类号： H01J49/00 , H01J27/00 , G21K5/10
CPC分类号： H01J37/09 , H01J2237/022 , H01J2237/0805 , H01J2237/3109
摘要： In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.
摘要翻译：在用于其表面涂覆有液态金属的离子束光学系统的孔中，防止归因于溅射的离子源的不稳定性和孔基材的再沉积。使用液体金属离子源的聚焦离子束装置具有用于限制离子束直径的孔。孔具有形成有凹槽的容器，凹槽在其表面的最低点处具有离子束通过的孔眼和安装在凹部上的液态金属，液态金属用于液体金属离子源。优选地，孔径可以在孔径入口孔内表面的面积中最小化，孔面内表面通过使下游侧的离子束通过的孔眼部分变细而露出基底材料。

9. 发明申请

US20080067385A1 Method and apparatus for processing a micro sample 有权
公开(公告)号：US20080067385A1
公开(公告)日：2008-03-20
申请号：US11980654
申请日：2007-10-31
申请人： Mitsuo Tokuda , Muneyuki Fukuda , Yasuhiro Mitsui , Hidemi Koike , Satoshi Tomimatsu , Hiroyasu Shichi , Hideo Kashima , Kaoru Umemura
发明人： Mitsuo Tokuda , Muneyuki Fukuda , Yasuhiro Mitsui , Hidemi Koike , Satoshi Tomimatsu , Hiroyasu Shichi , Hideo Kashima , Kaoru Umemura
IPC分类号： G21K5/08 , G01N23/225
CPC分类号： H04L29/06 , G01N23/225 , H01J37/256 , H01J37/3056 , H01J2237/20 , H01J2237/202 , H01J2237/31745 , H04L67/16 , H04L69/329
摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

10. 发明授权

US07268356B2 Method and apparatus for specimen fabrication 有权
标题翻译：用于样品制造的方法和装置
公开(公告)号：US07268356B2
公开(公告)日：2007-09-11
申请号：US10898592
申请日：2004-07-26
申请人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
发明人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
IPC分类号： G21G5/00
CPC分类号： G01N23/20 , B23K15/0006 , B23K15/0013 , G01N1/286 , H01J2237/3114 , H01J2237/31745
摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.
摘要翻译：相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品通过转动样品台来控制切片。

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