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1. 发明申请

US20080210883A1 Liquid metal ion gun 有权
标题翻译：液态金属离子枪
公开(公告)号：US20080210883A1
公开(公告)日：2008-09-04
申请号：US12076481
申请日：2008-03-19
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： G21G5/00
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

2. 发明授权

US07211805B2 Liquid metal ion gun 有权
标题翻译：液态金属离子枪
公开(公告)号：US07211805B2
公开(公告)日：2007-05-01
申请号：US11312367
申请日：2005-12-21
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： H01J27/00 , G21G5/00 , G21K7/00
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

3. 发明授权

US07435972B2 Focused ion beam apparatus and liquid metal ion source 失效
标题翻译：聚焦离子束装置和液态金属离子源
公开(公告)号：US07435972B2
公开(公告)日：2008-10-14
申请号：US11714235
申请日：2007-03-06
申请人： Yuichi Madokoro , Shigeru Izawa , Kaoru Umemura , Hiroyasu Kaga
发明人： Yuichi Madokoro , Shigeru Izawa , Kaoru Umemura , Hiroyasu Kaga
IPC分类号： H01J49/00 , H01J27/00 , G21K5/10
CPC分类号： H01J37/09 , H01J2237/022 , H01J2237/0805 , H01J2237/3109
摘要： In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.
摘要翻译：在用于其表面涂覆有液态金属的离子束光学系统的孔中，防止归因于溅射的离子源的不稳定性和孔基材的再沉积。使用液体金属离子源的聚焦离子束装置具有用于限制离子束直径的孔。孔具有形成有凹槽的容器，凹槽在其表面的最低点处具有离子束通过的孔眼和安装在凹部上的液态金属，液态金属用于液体金属离子源。优选地，孔径可以在孔径入口孔内表面的面积中最小化，孔面内表面通过使下游侧的离子束通过的孔眼部分变细而露出基底材料。

4. 发明授权

US07189982B2 Focused ion beam apparatus and aperture 有权
标题翻译：聚焦离子束装置和孔径
公开(公告)号：US07189982B2
公开(公告)日：2007-03-13
申请号：US11205086
申请日：2005-08-17
申请人： Yuichi Madokoro , Shigeru Izawa , Kaoru Umemura , Hiroyasu Kaga
发明人： Yuichi Madokoro , Shigeru Izawa , Kaoru Umemura , Hiroyasu Kaga
IPC分类号： H01J37/08
CPC分类号： H01J37/09 , H01J2237/022 , H01J2237/0805 , H01J2237/3109
摘要： In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.
摘要翻译：在用于其表面涂覆有液态金属的离子束光学系统的孔中，防止归因于溅射的离子源的不稳定性和孔基材的再沉积。使用液体金属离子源的聚焦离子束装置具有用于限制离子束直径的孔。孔具有形成有凹槽的容器，凹槽在其表面的最低点处具有离子束通过的孔眼和安装在凹部上的液态金属，液态金属用于液体金属离子源。优选地，孔径可以在孔径入口孔内表面的面积中最小化，孔面内表面通过使下游侧的离子束通过的孔眼部分变细而露出基底材料。

5. 发明申请

US20060097186A1 Liquid metal ion gun 有权
标题翻译：液态金属离子枪
公开(公告)号：US20060097186A1
公开(公告)日：2006-05-11
申请号：US11312367
申请日：2005-12-21
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： H01J27/00
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

6. 发明授权

US07005651B2 Liquid metal ion gun 失效
标题翻译：液态金属离子枪
公开(公告)号：US07005651B2
公开(公告)日：2006-02-28
申请号：US11004903
申请日：2004-12-07
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： G21G5/00 , H01J27/00
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。通过使反溅射的粒子成为Ga液态金属离子源的元素（W和Ga），如果反溅射的粒子附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染。使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

7. 发明申请

US20070257200A1 Liquid metal ion gun 失效
公开(公告)号：US20070257200A1
公开(公告)日：2007-11-08
申请号：US11730803
申请日：2007-04-04
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： H01J27/02
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

8. 发明授权

US07804073B2 Liquid metal ion gun 有权
标题翻译：液态金属离子枪
公开(公告)号：US07804073B2
公开(公告)日：2010-09-28
申请号：US12076481
申请日：2008-03-19
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： H01J49/10 , H01J27/02
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

9. 发明授权

US07420181B2 Liquid metal ion gun 失效
公开(公告)号：US07420181B2
公开(公告)日：2008-09-02
申请号：US11730803
申请日：2007-04-04
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： H01J37/317 , G21K5/00 , G01N23/00
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

10. 发明申请

US20070152174A1 Focused ion beam apparatus and aperture 失效
公开(公告)号：US20070152174A1
公开(公告)日：2007-07-05
申请号：US11714235
申请日：2007-03-06
申请人： Yuichi Madokoro , Shigeru Izawa , Kaoru Umemura , Hiroyasu Kaga
发明人： Yuichi Madokoro , Shigeru Izawa , Kaoru Umemura , Hiroyasu Kaga
IPC分类号： H01J37/08
CPC分类号： H01J37/09 , H01J2237/022 , H01J2237/0805 , H01J2237/3109
摘要： In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

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