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1. 发明授权

US06979823B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US06979823B2
公开(公告)日：2005-12-27
申请号：US10865850
申请日：2004-06-14
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： G01N23/20 , G01N23/225 , G01Q20/02 , G01Q30/02 , G01Q30/04 , G01Q30/20 , H01J37/26 , H01L21/027 , H01L21/66 , H01J37/244
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

2. 发明授权

US07242015B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US07242015B2
公开(公告)日：2007-07-10
申请号：US11234197
申请日：2005-09-26
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： H01J37/153 , H01J37/30
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

3. 发明申请

US20060017014A1 Patterned wafer inspection method and apparatus therefor 有权
公开(公告)号：US20060017014A1
公开(公告)日：2006-01-26
申请号：US11234197
申请日：2005-09-26
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： G21G5/00
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

4. 发明授权

US06797954B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US06797954B2
公开(公告)日：2004-09-28
申请号：US10400588
申请日：2003-03-28
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： H01J37244
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

5. 发明授权

US06476390B1 Method and apparatus for inspecting integrated circuit pattern using a plurality of charged particle beams 有权
标题翻译：使用多个带电粒子束检查集成电路图案的方法和装置
公开(公告)号：US06476390B1
公开(公告)日：2002-11-05
申请号：US09646281
申请日：2000-09-15
申请人： Hisaya Murakoshi , Yusuke Yajima , Hiroyuki Shinada , Mari Nozoe , Atsuko Takafuji , Kaoru Umemura , Masaki Hasegawa , Katsuhiro Kuroda
发明人： Hisaya Murakoshi , Yusuke Yajima , Hiroyuki Shinada , Mari Nozoe , Atsuko Takafuji , Kaoru Umemura , Masaki Hasegawa , Katsuhiro Kuroda
IPC分类号： G01N2300
CPC分类号： H01J37/28 , G01N23/225 , G01N23/2255 , H01J2237/16 , H01J2237/18 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In a pattern inspection device of the present invention having at least three electron-optical systems, detection signals approximately simultaneously obtained from identical circuit patterns are compared with each other. Further, areas around plural electron sources can be maintained at high degrees of vacuum by evacuating an electron gun chamber mounted with plural electron guns independently of a sample chamber. Further, electric fields and magnetic fields are confined in each electron-optical system by a shield electrode which makes it possible to evacuate an electron beam path to a high degree of vacuum, and at the same time, secondary electrons and reflected electrons are detected in the same electron-optical system by setting the samples to a negative voltage and accelerating secondary electrons and reflected electrons toward the electron source side in the direction of the electron beam axis. Thus, defect determination in pattern inspection is performable substantially simultaneously, and at the same time, the throughput of the inspections is improvable in proportion to the number of the electron-optical systems. Further, three or more electron sources are operable in a stable manner in high vacuum states, and signals from closely arranged electron-optical systems are detectable with high accuracy, and accurate inspections are performable.
摘要翻译：在具有至少三个电子 - 光学系统的本发明的图案检查装置中，将从相同电路图形大致同时获得的检测信号彼此进行比较。此外，通过与安装有多个电子枪的电子枪室独立于样品室排出，可以将多个电子源周围的区域保持在高真空度。此外，通过屏蔽电极将电场和磁场限制在每个电子 - 光学系统中，该屏蔽电极使得可以将电子束路径排出到高真空度，同时二次电子和反射电子被检测到相同的电子 - 光学系统通过将样品设置为负电压并且在电子束轴的方向上将二次电子和反射电子加速朝向电子源侧。因此，图案检查中的缺陷确定可以基本上同时执行，并且同时，检查的吞吐量可以与电子 - 光学系统的数量成比例地改善。此外，三个或更多个电子源可以以高真空状态稳定地操作，并且来自紧密排列的电子 - 光学系统的信号可以高精度地检测，并且可以进行准确的检查。

6. 发明申请

US20070181808A1 Electron microscope and electron bean inspection system. 审中-公开
标题翻译：电子显微镜和电子豆检查系统。
公开(公告)号：US20070181808A1
公开(公告)日：2007-08-09
申请号：US11701386
申请日：2007-02-02
申请人： Hisaya Murakoshi , Hideo Todokoro , Hiroyuki Shinada , Masaki Hasegawa , Momoyo Enyama
发明人： Hisaya Murakoshi , Hideo Todokoro , Hiroyuki Shinada , Masaki Hasegawa , Momoyo Enyama
IPC分类号： G21K7/00
CPC分类号： H01J37/29 , H01J2237/057 , H01J2237/1508 , H01J2237/24592 , H01J2237/2538 , H01J2237/2817
摘要： While an image obtained by a general electron microscope is affected by the shape and material of an object specimen, an image obtained from mirror electrons is affected by the shape of an equipotential surface on which the mirror electrons are reflected, thereby the image interpretation is complicated. A mirror electron microscope of the present invention is provided with the following means for controlling a reflecting plane of the mirror electrons according to the structure of an object pattern to be measured or a concerned defect.1) Means for controlling a potential difference between a specimen and an electron source equivalent to a height of a reflecting plane of a mirror electron beam according to a type, an operation condition of an electron source, and a type of a pattern on a specimen. 2) Means for controlling an energy distribution of an illuminating beam with an energy filter 9 disposed in an illuminating system. It is thus possible to inspect a specimen according to a size and a potential of a pattern, which are distinguished from others.
摘要翻译：当通过一般电子显微镜获得的图像受目标样本的形状和材料的影响时，由镜电子获得的图像受到反射镜电子反射的等电位面的形状的影响，从而图像解释复杂。本发明的镜电子显微镜具备以下用于根据被测量对象图案的结构或相关缺陷来控制镜电子的反射面的装置。 1）根据类型，电子源的操作条件和样品上的图案的类型来控制样品和电子源之间的电位差与电子束的反射面的高度的电位差的装置。 2）用于通过设置在照明系统中的能量过滤器9来控制照明光束的能量分布的装置。因此，可以根据区别于其他图案的尺寸和电位来检查样本。

7. 发明授权

US07547884B2 Pattern defect inspection method and apparatus thereof 有权
标题翻译：图案缺陷检查方法及其装置
公开(公告)号：US07547884B2
公开(公告)日：2009-06-16
申请号：US11449650
申请日：2006-06-09
申请人： Masaki Hasegawa , Hiroshi Makino , Hikaru Koyama , Zhaohui Cheng , Hisaya Murakoshi
发明人： Masaki Hasegawa , Hiroshi Makino , Hikaru Koyama , Zhaohui Cheng , Hisaya Murakoshi
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01J37/026 , G01R31/307 , H01J37/29 , H01J2237/0045 , H01J2237/0047 , H01J2237/045 , H01J2237/2594 , H01J2237/2817
摘要： In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.
摘要翻译：在本发明中，充电控制电极的结构从栅格型切换为狭缝型，从而在用光束照射晶片时不形成阴影。此外，在充电控制狭缝的前方设置有光束形成狭缝，防止了带电控制狭缝被用于预充电的电子束照射，从而抑制了妨碍电气控制的二次电子的产生。狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。此外，设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。

8. 发明申请

US20080265161A1 Electron Microscope And Electron Beam Inspection System 审中-公开
标题翻译：电子显微镜和电子束检测系统
公开(公告)号：US20080265161A1
公开(公告)日：2008-10-30
申请号：US12144060
申请日：2008-06-23
申请人： Hisaya Murakoshi , Masaki Hasegawa , Hideo Todokoro
发明人： Hisaya Murakoshi , Masaki Hasegawa , Hideo Todokoro
IPC分类号： G21K7/00
CPC分类号： H01J37/29 , H01J37/147 , H01J2237/1508 , H01J2237/2538 , H01J2237/28
摘要： An electron microscope includes an electron source, a stage for mounting a specimen, an illuminating lens system that illuminates an electron beam onto the specimen, an imaging lens system that forms a specimen image using a reflecting electron beam of the illuminating electron beam, a beam separator that separates the illuminating electron beam and the reflecting electron beam, a control unit that controls current to be supplied to the beam separator; and a switching unit which enables switching between a first mode and a second mode. The control unit changes a value of the current to be supplied to the beam separator when switching from the first mode to the second mode.
摘要翻译：电子显微镜包括电子源，用于安装样本的台，将样品照射电子束的照明透镜系统，使用照射电子束的反射电子束形成标本图像的成像透镜系统，光束分离器，其分离照明电子束和反射电子束;控制单元，其控制供给到光束分离器的电流; 以及能够在第一模式和第二模式之间切换的切换单元。当从第一模式切换到第二模式时，控制单元改变要提供给分束器的电流的值。

9. 发明授权

US07566871B2 Method and apparatus for pattern inspection 有权
标题翻译：图案检查方法和装置
公开(公告)号：US07566871B2
公开(公告)日：2009-07-28
申请号：US11698025
申请日：2007-01-26
申请人： Masaki Hasegawa , Hisaya Murakoshi , Hiroshi Makino
发明人： Masaki Hasegawa , Hisaya Murakoshi , Hiroshi Makino
IPC分类号： G01N23/00 , G21K7/00 , A61N5/00 , G21G5/00
CPC分类号： H01J37/265 , G06T7/0004 , G06T2207/10056 , G06T2207/30148 , H01J37/29 , H01J2237/22 , H01J2237/24592
摘要： Because a mirror electron imaging type inspection apparatus for obtaining an inspection object image with mirror electrons has been difficult to optimize inspection conditions, since the image forming principles of the apparatus are different from those of conventional SEM type inspection apparatuses. In order to solve the above conventional problem, the present invention has made it possible for the user to examine such conditions as inspection speed, inspection sensitivity, etc. intuitively by displaying the relationship among the values of inspection speed S, inspection object digital signal image pixel size D, inspection object image size L, and image signal acquisition cycle P with use of a time delay integration method as a graph on an operation screen. The user can thus determine a set of values of a pixel size, an inspection image width, and a TDI sensor operation cycle easily with reference to the displayed graph.
摘要翻译：由于用于获得具有镜电子的检查对象图像的镜像电子成像型检查装置难以优化检查条件，因为该装置的图像形成原理与常规SEM型检查装置的图像形成原理不同。为了解决上述常规问题，本发明使得用户可以通过显示检查速度S，检查对象数字信号图像的值之间的关系来直观地检查诸如检查速度，检查灵敏度等条件像素尺寸D，检查对象图像尺寸L和图像信号采集周期P，使用时间延迟积分方法作为操作画面上的图形。因此，用户可以参照所显示的图形容易地确定像素尺寸，检查图像宽度和TDI传感器操作循环的一组值。

10. 发明授权

US08502141B2 Graphical user interface for use with electron beam wafer inspection 有权
标题翻译：用于电子束晶圆检查的图形用户界面
公开(公告)号：US08502141B2
公开(公告)日：2013-08-06
申请号：US12457734
申请日：2009-06-19
申请人： Masaki Hasegawa , Hisaya Murakoshi , Hiroshi Makino
发明人： Masaki Hasegawa , Hisaya Murakoshi , Hiroshi Makino
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01J37/265 , G06T7/0004 , G06T2207/10056 , G06T2207/30148 , H01J37/29 , H01J2237/22 , H01J2237/24592
摘要： Because a mirror electron imaging type inspection apparatus for obtaining an inspection object image with mirror electrons has been difficult to optimize inspection conditions, since the image forming principles of the apparatus are different from those of conventional SEM type inspection apparatuses. In order to solve the above conventional problem, the present invention has made it possible for the user to examine such conditions as inspection speed, inspection sensitivity, etc. intuitively by displaying the relationship among the values of inspection speed S, inspection object digital signal image pixel size D, inspection object image size L, and image signal acquisition cycle P with use of a time delay integration method as a graph on an operation screen. The user can thus determine a set of values of a pixel size, an inspection image width, and a TDI sensor operation cycle easily with reference to the displayed graph.
摘要翻译：由于用于获得具有镜电子的检查对象图像的镜像电子成像型检查装置难以优化检查条件，因为该装置的图像形成原理与常规SEM型检查装置的图像形成原理不同。为了解决上述常规问题，本发明使得用户可以通过显示检查速度S，检查对象数字信号图像的值之间的关系来直观地检查诸如检查速度，检查灵敏度等条件像素尺寸D，检查对象图像尺寸L和图像信号采集周期P，使用时间延迟积分方法作为操作画面上的图形。因此，用户可以参照所显示的图形容易地确定像素尺寸，检查图像宽度和TDI传感器操作循环的一组值。

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