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    • 2. 发明申请
    • Liquid metal ion gun
    • 液态金属离子枪
    • US20080210883A1
    • 2008-09-04
    • US12076481
    • 2008-03-19
    • Hiroyasu KagaYuichi MadokoroShigeru IzawaTohru IshitaniKaoru Umemura
    • Hiroyasu KagaYuichi MadokoroShigeru IzawaTohru IshitaniKaoru Umemura
    • G21G5/00
    • H01J27/02H01J27/22H01J37/08H01J2237/0805
    • An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
    • Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素(W和Ga),如果反溅射的颗粒附着到Ga液态金属离子源,则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制(GUN)光圈来放置大约的Ga。 在束发射区域(Ga储存)中包含的部分的表面上25mg(熔点为30℃))。 当将离子发射到光束限制(GUN)孔径时,发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。
    • 5. 发明授权
    • Liquid metal ion gun
    • 液态金属离子枪
    • US07211805B2
    • 2007-05-01
    • US11312367
    • 2005-12-21
    • Hiroyasu KagaYuichi MadokoroShigeru IzawaTohru IshitaniKaoru Umemura
    • Hiroyasu KagaYuichi MadokoroShigeru IzawaTohru IshitaniKaoru Umemura
    • H01J27/00G21G5/00G21K7/00
    • H01J27/02H01J27/22H01J37/08H01J2237/0805
    • An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
    • Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素(W和Ga),如果反溅射的颗粒附着到Ga液态金属离子源,则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制(GUN)光圈来放置大约的Ga。 在束发射区域(Ga储存)中包含的部分的表面上25mg(熔点为30℃))。 当将离子发射到光束限制(GUN)孔径时,发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。