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1. 发明授权

US08796651B2 Method and apparatus for specimen fabrication 有权
标题翻译：用于样品制造的方法和装置
公开(公告)号：US08796651B2
公开(公告)日：2014-08-05
申请号：US12929396
申请日：2011-01-20
申请人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
发明人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
IPC分类号： G21G5/00
CPC分类号： G01N23/20 , B23K15/0006 , B23K15/0013 , G01N1/286 , H01J2237/3114 , H01J2237/31745
摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.
摘要翻译：相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品通过转动样品台来控制切片。

2. 发明授权

US08791413B2 Charged particle beam device and sample observation method using a rotating detector 有权
标题翻译：使用旋转探测器的带电粒子束装置和样品观察方法
公开(公告)号：US08791413B2
公开(公告)日：2014-07-29
申请号：US13817644
申请日：2011-08-02
申请人： Shinya Kitayama , Wataru Suzuki , Satoshi Tomimatsu
发明人： Shinya Kitayama , Wataru Suzuki , Satoshi Tomimatsu
IPC分类号： G01N23/00
CPC分类号： H01J37/261 , H01J37/244 , H01J37/28 , H01J37/3056 , H01J2237/024 , H01J2237/184 , H01J2237/31745 , H01J2237/31749
摘要： Provided is a charged particle beam device that outputs both an ion beam and an electron beam at a sample, has a common detector for both the ion beam and the electron beam in the charged particle beam device that processes and observes the sample, and is able to provide a detection unit to an appropriate position corresponding to the process details and observation technique of the sample. Provided are an electron beam optical column in which an electron beam for observing the observation surface of a sample is generated, an ion beam optical column in which an ion beam that processes the sample is generated, a detection device that detects a secondary signal generated from the sample or transmitted electrons, and a sample stage that is capable of mounting the detection device thereon; is rotatable in a horizontal plane that includes the optical axis of the electron beam and the optical axis of the ion beam about a cross point where both optical axes intersect; and is able to change the distance between the observation surface of the sample and the cross point.
摘要翻译：提供了一种在样品输出离子束和电子束的带电粒子束装置，在处理和观察样品的带电粒子束装置中具有用于离子束和电子束两者的公共检测器，并且能够以将检测单元提供到对应于样品的处理细节和观察技术的适当位置。提供了一种电子束光学柱，其中产生用于观察样品观察表面的电子束，产生处理样品的离子束的离子束光学柱，检测装置，其检测从样品或透射电子，以及能够在其上安装检测装置的样品台; 可以在包括电子束的光轴和离子束的光轴的水平面中绕两个光轴相交的交叉点旋转; 并且能够改变样品的观察表面与交叉点之间的距离。

3. 发明申请

US20120273692A1 METHOD AND APPARATUS FOR PROCESSING A MICROSAMPLE 有权
标题翻译：用于处理微阵列的方法和装置
公开(公告)号：US20120273692A1
公开(公告)日：2012-11-01
申请号：US13547942
申请日：2012-07-12
申请人： Mitsuo TOKUDA , Muneyuki FUKUDA , Yasuhiro MITSUI , Hidemi KOIKE , Satoshi TOMIMATSU , Hiroyasu SHICHI , Hideo KASHIMA , Kaoru UMEMURA
发明人： Mitsuo TOKUDA , Muneyuki FUKUDA , Yasuhiro MITSUI , Hidemi KOIKE , Satoshi TOMIMATSU , Hiroyasu SHICHI , Hideo KASHIMA , Kaoru UMEMURA
IPC分类号： H01J3/14
CPC分类号： H04L29/06 , G01N23/225 , H01J37/256 , H01J37/3056 , H01J2237/20 , H01J2237/202 , H01J2237/31745 , H04L67/16 , H04L69/329
摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
摘要翻译：本发明的目的是实现一种用于处理和观察微分样品的方法和装置，其能够以高分辨率，高精度和高产量在水平和垂直方向观察晶片的截面而不分裂任何作为样品的晶片。在本发明的装置中，在一个真空容器中包括聚焦离子束光学系统和电子光学系统，并且通过用带电粒子束的成形处理分离包含样品的所需区域的微小样品，并且在那里被包括用于提取分离的微小样本的操纵器和用于独立于晶片样品台驱动操纵器的操纵器控制器。

4. 发明申请

US20110240855A1 ELECTRON BEAM DEVICE AND ELECTRON BEAM APPLICATION DEVICE USING THE SAME 有权
标题翻译：电子束装置和使用其的电子束应用装置
公开(公告)号：US20110240855A1
公开(公告)日：2011-10-06
申请号：US13133947
申请日：2009-12-04
申请人： Takashi Ohshima , Satoshi Tomimatsu
发明人： Takashi Ohshima , Satoshi Tomimatsu
IPC分类号： H01J9/02 , H01J19/02 , H01J37/073
CPC分类号： H01J37/28 , H01J37/065 , H01J37/075 , H01J37/256 , H01J2237/06316
摘要： To obtain a SEM capable of both providing high resolution at low acceleration voltage and allowing high-speed elemental distribution measurement, a SE electron source including Zr—O as a diffusion source is shaped so that the radius r of curvature of the tip is more than 0.5 μm and less than 1 μm, and the cone angle α of a conical portion at a portion in the vicinity of the tip at a distance of 3r to 8r from the tip, is more than 5° and less than (8/r)°. Another SE electron source uses Ba—O and includes a barium diffusion supply means composed of a sintered metal and a barium diffusion source containing barium oxide.
摘要翻译：为了获得能够在低加速电压下提供高分辨率并允许高速元素分布测量的SEM，包括Zr-O作为扩散源的SE电子源被成形为使得尖端的曲率半径r大于 0.5μm以上且小于1μm，顶端附近的3r〜8r的尖部附近的圆锥部的锥角α大于5°且小于（8 / r） °。另一个SE电子源使用Ba-O，并且包括由烧结金属和含有氧化钡的钡扩散源组成的钡扩散供给装置。

5. 发明授权

US07709062B2 Refilling method by ion beam, instrument for fabrication and observation by ion beam, and manufacturing method of electronic device 失效
标题翻译：离子束加注法，离子束制造和观察仪器及电子器件的制造方法
公开(公告)号：US07709062B2
公开(公告)日：2010-05-04
申请号：US10322591
申请日：2002-12-19
申请人： Hiroyasu Shichi , Muneyuki Fukuda , Isamu Sekihara , Satoshi Tomimatsu , Kaoru Umemura
发明人： Hiroyasu Shichi , Muneyuki Fukuda , Isamu Sekihara , Satoshi Tomimatsu , Kaoru Umemura
IPC分类号： C23C14/46 , C23C16/48 , B05D5/00 , B05D1/26
CPC分类号： C23C16/047 , C23C16/045 , G01N1/32 , H01J2237/31732 , H01J2237/31745 , H01J2237/31749
摘要： A hole in a sample from which a sample piece has been extracted with a focused ion beam is filled at high speed using ion beam gas assisted deposition. A method of filling the hole by using the ion beam includes a step of irradiating the hole formed in a face of the sample with the ion beam to thereby form an ion beam gas-assisted deposition layer in the hole. The ion beam gas-assisted deposition layer is formed in the hole while controlling the area to which the ion beam is irradiated so as to cause the ion beam to fall on a part of a side wall of the hole and to not fall on another part of the side wall in an area scanned with the ion beam. The filled hole may then be covered with a protective film.
摘要翻译：使用离子束气体辅助沉积，以高速度填充样品中已经用聚焦离子束提取样品的孔。通过使用离子束填充孔的方法包括用离子束照射形成在样品表面上的孔，从而在孔中形成离子束气体辅助沉积层的步骤。离子束气体辅助沉积层形成在孔中，同时控制照射离子束的区域，使得离子束落在孔的侧壁的一部分上，并且不会落在另一部分上在用离子束扫描的区域中的侧壁。填充的孔然后可以用保护膜覆盖。

6. 发明授权

US07696496B2 Apparatus for ion beam fabrication 有权
标题翻译：离子束制造装置
公开(公告)号：US07696496B2
公开(公告)日：2010-04-13
申请号：US12003207
申请日：2007-12-20
申请人： Satoshi Tomimatsu , Hiroyasu Shichi , Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
发明人： Satoshi Tomimatsu , Hiroyasu Shichi , Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
IPC分类号： H01J37/317
CPC分类号： H01J37/3056 , H01J37/045 , H01J37/244 , H01J37/304 , H01J2237/24405 , H01J2237/24507 , H01J2237/24535 , H01J2237/24542 , H01J2237/30472
摘要： The apparatus for ion beam fabrication, which has been able to detect any anomalous condition of ion beams only by means of the current irradiated on the specimen, could not compensate the failure by investigating the cause and could not realize stable processing. To solve the problem described above, the present invention includes the first and second blankers and Faraday cups switches ON and OFF the first and second blankers and monitors beam current at two positions above and below the projection mask. By adopting this configuration, it will be possible to acquire the information on failure in ion beam, sort out the cause of the failure and to compensate the failure while limiting damages to the projection mask. As a result, it will be possible to realize stable processing by means of ion beam, and to use the ion beam fabricating device on a stable basis.
摘要翻译：离子束制造装置只能通过照射在样本上的电流来检测离子束的任何异常状态，不能通过调查原因补偿故障，无法实现稳定的处理。为了解决上述问题，本发明包括第一和第二消隐器和法拉第杯开关第一和第二消隐器的接通和断开，并监视在投影面罩上方和下方的两个位置处的电流。通过采用这种配置，可以获取关于离子束故障的信息，整理故障原因并补偿故障，同时限制对投影面罩的损害。结果，可以通过离子束实现稳定的处理，并且可以稳定地使用离子束制造装置。

7. 发明申请

US20090008578A1 METHOD AND APPARATUS FOR SPECIMEN FABRICATION 有权
标题翻译：方法和装置用于样本制造
公开(公告)号：US20090008578A1
公开(公告)日：2009-01-08
申请号：US12168241
申请日：2008-07-07
申请人： Satoshi Tomimatsu , Kaoru Umemura , Yuichi Madokoro , Yoshimi Kawanami , Yasunori Doi
发明人： Satoshi Tomimatsu , Kaoru Umemura , Yuichi Madokoro , Yoshimi Kawanami , Yasunori Doi
IPC分类号： H01J37/08
CPC分类号： G01N1/32 , G01N1/28 , G01N2001/028 , G01N2001/045 , G01N2001/282 , H01J37/20 , H01J37/302 , H01J37/3056 , H01J2237/2007 , H01J2237/201 , H01J2237/202 , H01J2237/31732 , H01J2237/31745 , H01J2237/31749
摘要： A specimen fabrication apparatus, including: an ion beam irradiating optical system to irradiate a sample placed in a chamber, with an ion beam; a specimen holder to mount a specimen separated by the irradiation with the ion beam; a holder cassette to hold the specimen holder; a sample stage to hold the sample and the holder cassette; and a probe to move the specimen to the specimen holder, wherein the holder cassette is transferred to outside of the chamber in a condition of holding the specimen holder with the specimen mounted.
摘要翻译：一种标本制造装置，包括：离子束照射光学系统，用离子束照射放置在室中的样品; 用于安装通过用离子束照射分离的样本的样本保持器; 用于保持样品架的保持器盒; 用于保持样品和保持器盒的样品台; 以及用于将样本移动到样本保持器的探针，其中，在保持样本保持器的状态下，保持器盒被转移到腔室的外部。

8. 发明授权

US07470918B2 Method and apparatus for processing a micro sample 有权
公开(公告)号：US07470918B2
公开(公告)日：2008-12-30
申请号：US11706356
申请日：2007-02-15
申请人： Mitsuo Tokuda , Muneyuki Fukuda , Yasuhiro Mitsui , Hidemi Koike , Satoshi Tomimatsu , Hiroyasu Shichi , Hideo Kashima , Kaoru Umemura
发明人： Mitsuo Tokuda , Muneyuki Fukuda , Yasuhiro Mitsui , Hidemi Koike , Satoshi Tomimatsu , Hiroyasu Shichi , Hideo Kashima , Kaoru Umemura
IPC分类号： H01J37/256 , G21N23/225
CPC分类号： H04L29/06 , G01N23/225 , H01J37/256 , H01J37/3056 , H01J2237/20 , H01J2237/202 , H01J2237/31745 , H04L67/16 , H04L69/329
摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

9. 发明申请

US20080296497A1 METHOD AND APPARATUS FOR SPECIMEN FABRICATION 有权
标题翻译：方法和装置用于样本制造
公开(公告)号：US20080296497A1
公开(公告)日：2008-12-04
申请号：US12168232
申请日：2008-07-07
申请人： Satoshi TOMIMATSU , Kaoru Umemura , Yuichi Madokoro , Yoshimi Kawanami , Yasunori Doi
发明人： Satoshi TOMIMATSU , Kaoru Umemura , Yuichi Madokoro , Yoshimi Kawanami , Yasunori Doi
IPC分类号： G01N23/00
CPC分类号： G01N1/32 , G01N1/28 , G01N2001/028 , G01N2001/045 , G01N2001/282 , H01J37/20 , H01J37/302 , H01J37/3056 , H01J2237/2007 , H01J2237/201 , H01J2237/202 , H01J2237/31732 , H01J2237/31745 , H01J2237/31749
摘要： A system for analyzing a semiconductor device, including: a first ion beam apparatus including: a sample stage to mount a sample substrate; a vacuum chamber in which the sample stage is placed; an ion beam irradiating optical system to irradiate the sample substrate; a specimen holder that accommodates a plurality of specimens separated from the sample substrate by the irradiation of the ion beam; and a probe to extract the separated specimen from the sample substrate, and to transfer the separated specimen to the specimen holder; a second ion beam apparatus that carries out a finishing process to the specimen; and an analyzer to analyze the finished specimen, wherein the first ion beam apparatus separates the specimen and the probe in a vacuum condition.
摘要翻译：一种用于分析半导体器件的系统，包括：第一离子束装置，包括：样品台，用于安装样品基板; 其中放置样品台的真空室; 离子束照射光学系统照射样品基板; 样本保持器，其容纳通过离子束的照射与样品基板分离的多个样本; 以及从所述样品基材中提取分离出的试样并将分离的试样转移到所述试样保持器的探针。对样品进行精加工的第二离子束装置; 以及用于分析成品样品的分析器，其中所述第一离子束装置在真空条件下分离所述样品和所述探针。

10. 发明申请

US20070158591A1 Method and apparatus for processing a micro sample 有权
公开(公告)号：US20070158591A1
公开(公告)日：2007-07-12
申请号：US11706355
申请日：2007-02-15
申请人： Mitsuo Tokuda , Muneyuki Fukuda , Yasahiro Mitsui , Hidemi Koike , Satoshi Tomimatsu , Hiroyasu Shichi , HIdeo Kashima , Kaoru Umemura
发明人： Mitsuo Tokuda , Muneyuki Fukuda , Yasahiro Mitsui , Hidemi Koike , Satoshi Tomimatsu , Hiroyasu Shichi , HIdeo Kashima , Kaoru Umemura
IPC分类号： H01J37/08 , G21K5/10
CPC分类号： H04L29/06 , G01N23/225 , H01J37/256 , H01J37/3056 , H01J2237/20 , H01J2237/202 , H01J2237/31745 , H04L67/16 , H04L69/329
摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

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