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    • 4. 发明申请
    • Multi-column electron beam exposure apparatus and magnetic field generation device
    • 多列电子束曝光装置及磁场发生装置
    • US20110148297A1
    • 2011-06-23
    • US12928899
    • 2010-12-22
    • Hiroshi YasudaYoshihisa OoaeTakeshi Haraguchi
    • Hiroshi YasudaYoshihisa OoaeTakeshi Haraguchi
    • H01J23/08H01F7/00
    • H01J37/143B82Y10/00B82Y40/00H01J37/06H01J37/3174H01J2237/0635H01J2237/14
    • A multi-column electron beam exposure apparatus includes: multiple column cells; an electron beam converging unit in which two annular permanent magnets and electromagnetic coils are surrounded by a ferromagnetic frame, each of the two annular permanent magnets being magnetized in an optical axis direction and being symmetrical about the optical axis, the electromagnetic coils disposed near the annular permanent magnets and used to adjust magnetic fields of the annular permanent magnets; and a substrate provided with circular apertures through which electron beams used in the column cells pass, respectively, the substrate having the electron beam converging unit disposed in a side portion of each of the circular apertures. The two annular permanent magnets may be disposed one above the other in the optical axis direction with same polarities facing each other, and the electromagnetic coils may be provided inside or outside the annular permanent magnets in their radial direction.
    • 多列电子束曝光装置包括:多列细胞; 电子束会聚单元,其中两个环形永磁体和电磁线圈被铁磁框架包围,两个环形永磁体中的每一个在光轴方向上被磁化并且围绕光轴对称,电磁线圈设置在环形 永磁体,用于调整环形永磁体的磁场; 以及设置有圆孔的基板,通过该圆形孔分别通过电子束会聚单元的基板,每个圆形孔的侧面部分通过电子束。 两个环形永磁体可以沿着光轴方向一个一个地设置在彼此相同的极性上,并且电磁线圈可以设置在环形永磁体的径向内侧或外侧。
    • 7. 发明授权
    • Charge-particle beam lithography system of blanking aperture array type
    • 消隐孔径阵列型电荷粒子光刻系统
    • US06465796B1
    • 2002-10-15
    • US09350238
    • 1999-07-09
    • Takeshi HaraguchiTomohiko AbeYoshihisa Ooae
    • Takeshi HaraguchiTomohiko AbeYoshihisa Ooae
    • H01J37304
    • B82Y10/00B82Y40/00H01J37/3174H01J2237/0453H01J2237/0458
    • Disclosed is a charged-particle beam lithography system in which deterioration of a BAA chip is prevented without a reduction in the magnitude of a charged-particle beam used for exposure. The charged-particle beam lithography system has a charged-particle beam emitter source and a chip having a plurality of apertures arrayed therein. The plurality of apertures shapes a charged-particle beam emitted from the emitter source so that the cross section thereof will have a predetermined shape. The charged-particle beam lithography system uses the charged-particle beam having passed through the apertures to pattern an exposed sample. The charged-particle beam lithography system includes a mask having a plurality of apertures bored therein. The plurality of apertures is arrayed in the same manner as the plurality of apertures arrayed in the chip, and has a size that is any multiple of the size of the apertures of the chip. The mask is located on a path, along which the charged-particle beam travels, between the charged-particle beam emitter source and chip.
    • 公开了一种带电粒子束光刻系统,其中防止BAA芯片的劣化,而不会减少用于曝光的带电粒子束的幅度。 带电粒子束光刻系统具有带电粒子束发射源和在其中排列有多个孔的芯片。 多个孔形成从发射源发射的带电粒子束,使得其截面具有预定形状。 带电粒子束光刻系统使用穿过孔的带电粒子束来图案化暴露的样品。 带电粒子束光刻系统包括具有在其中钻孔的多个孔的掩模。 多个孔以与排列在芯片中的多个孔相同的方式排列,并且其尺寸是芯片的孔的大小的任何倍数。 掩模位于带电粒子束在其上行进的路径上,在带电粒子束发射源和芯片之间。
    • 9. 发明申请
    • Electron beam exposure apparatus and method for cleaning the same
    • 电子束曝光装置及其清洗方法
    • US20080169433A1
    • 2008-07-17
    • US12077153
    • 2008-03-17
    • Hiroshi YasudaYoshihisa Ooae
    • Hiroshi YasudaYoshihisa Ooae
    • A61N5/00
    • H01J37/3174B82Y10/00B82Y40/00H01J2237/31793
    • Provided is an electron beam exposure apparatus for forming a desired pattern on a sample mounted on a wafer stage by exposure with an electron beam generated form an electron gun. The electron beam exposure apparatus includes: supplying device of injecting a reducing gas into a column in which the electron gun and the wafer stage are housed; and control unit of performing control so that the injection of the reducing gas into the column is continued for a predetermined period of time. Organic contamination is combined with H generated from the reducing gas by irradiation of an electron beam, and then evaporates. Further included is supplying device of injecting an ozone gas into the column. The control unit may perform control so that the injection of the ozone gas into the column in addition to the injection of the reducing gas is continued for a predetermined period of time.
    • 提供一种电子束曝光装置,用于通过用电子枪产生的电子束曝光在安装在晶片台上的样品上形成所需图案。 电子束曝光装置包括:将还原气体注入到容纳电子枪和晶片台的列中的供给装置; 以及执行控制的控制单元,使得将还原气体注入到所述列中持续预定时间段。 有机污染与通过照射电子束从还原气体生成的H结合,然后蒸发。 还包括将臭氧气体注入塔的供给装置。 控制单元可以执行控制,使得除了注入还原气体之外,将臭氧气体注入到塔中持续预定的时间段。