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    • 3. 发明授权
    • Electron gun used in an electron beam exposure apparatus
    • 用于电子束曝光装置的电子枪
    • US06252344B1
    • 2001-06-26
    • US09335398
    • 1999-06-17
    • Yoshihisa OoaeTakamasa SatohAkio YamadaHiroshi Yasuda
    • Yoshihisa OoaeTakamasa SatohAkio YamadaHiroshi Yasuda
    • H01J2976
    • H01J37/241H01J2237/3175
    • An electron gun, preferably a four-pole electron gun, used in an electron beam exposure apparatus is formed by: a cathode for emitting an electron beam when supplying a negative and high-accelerated voltage; a first grid provided downstream of the cathode for focusing a crossover image of the electron beam when supplying a voltage which becomes a reverse bias for the cathode, and the cathode and the first grid being arranged at a high voltage side of a high voltage insulator; an anode for collecting the electron beam which passes through the first grid, and being arranged at a low voltage side of the high voltage insulator; and a second grid provided at the high voltage side of the high voltage insulator and between the first grid and the anode, and having an aperture for limiting an amount of the electron beam passing therethrough. A voltage which becomes a forward bias for the cathode is supplied to the second grid, and the crossover image is focused at the aperture of the second grid.
    • 电子束曝光装置中使用的优选四极电子枪的电子枪是通过以下方式形成的:用于在提供负高和高加速电压时发射电子束的阴极; 设置在阴极的下游的第一栅极,用于在提供成为阴极的反向偏压的电压时使聚焦电子束的交叉图像,并且阴极和第一栅极布置在高压绝缘体的高压侧; 用于收集通过第一栅格的电子束并且布置在高压绝缘体的低电压侧的阳极; 以及设置在高压绝缘子的高压侧和第一栅极与阳极之间的第二栅极,并且具有用于限制通过其中的电子束的量的孔。 成为阴极的正向偏压的电压被提供给第二栅极,并且交叉图像聚焦在第二栅极的孔径处。
    • 5. 发明申请
    • Multi-column electron beam exposure apparatus and magnetic field generation device
    • 多列电子束曝光装置及磁场发生装置
    • US20110148297A1
    • 2011-06-23
    • US12928899
    • 2010-12-22
    • Hiroshi YasudaYoshihisa OoaeTakeshi Haraguchi
    • Hiroshi YasudaYoshihisa OoaeTakeshi Haraguchi
    • H01J23/08H01F7/00
    • H01J37/143B82Y10/00B82Y40/00H01J37/06H01J37/3174H01J2237/0635H01J2237/14
    • A multi-column electron beam exposure apparatus includes: multiple column cells; an electron beam converging unit in which two annular permanent magnets and electromagnetic coils are surrounded by a ferromagnetic frame, each of the two annular permanent magnets being magnetized in an optical axis direction and being symmetrical about the optical axis, the electromagnetic coils disposed near the annular permanent magnets and used to adjust magnetic fields of the annular permanent magnets; and a substrate provided with circular apertures through which electron beams used in the column cells pass, respectively, the substrate having the electron beam converging unit disposed in a side portion of each of the circular apertures. The two annular permanent magnets may be disposed one above the other in the optical axis direction with same polarities facing each other, and the electromagnetic coils may be provided inside or outside the annular permanent magnets in their radial direction.
    • 多列电子束曝光装置包括:多列细胞; 电子束会聚单元,其中两个环形永磁体和电磁线圈被铁磁框架包围,两个环形永磁体中的每一个在光轴方向上被磁化并且围绕光轴对称,电磁线圈设置在环形 永磁体,用于调整环形永磁体的磁场; 以及设置有圆孔的基板,通过该圆形孔分别通过电子束会聚单元的基板,每个圆形孔的侧面部分通过电子束。 两个环形永磁体可以沿着光轴方向一个一个地设置在彼此相同的极性上,并且电磁线圈可以设置在环形永磁体的径向内侧或外侧。
    • 7. 发明申请
    • Electron beam exposure apparatus and method for cleaning the same
    • 电子束曝光装置及其清洗方法
    • US20080169433A1
    • 2008-07-17
    • US12077153
    • 2008-03-17
    • Hiroshi YasudaYoshihisa Ooae
    • Hiroshi YasudaYoshihisa Ooae
    • A61N5/00
    • H01J37/3174B82Y10/00B82Y40/00H01J2237/31793
    • Provided is an electron beam exposure apparatus for forming a desired pattern on a sample mounted on a wafer stage by exposure with an electron beam generated form an electron gun. The electron beam exposure apparatus includes: supplying device of injecting a reducing gas into a column in which the electron gun and the wafer stage are housed; and control unit of performing control so that the injection of the reducing gas into the column is continued for a predetermined period of time. Organic contamination is combined with H generated from the reducing gas by irradiation of an electron beam, and then evaporates. Further included is supplying device of injecting an ozone gas into the column. The control unit may perform control so that the injection of the ozone gas into the column in addition to the injection of the reducing gas is continued for a predetermined period of time.
    • 提供一种电子束曝光装置,用于通过用电子枪产生的电子束曝光在安装在晶片台上的样品上形成所需图案。 电子束曝光装置包括:将还原气体注入到容纳电子枪和晶片台的列中的供给装置; 以及执行控制的控制单元,使得将还原气体注入到所述列中持续预定时间段。 有机污染与通过照射电子束从还原气体生成的H结合,然后蒸发。 还包括将臭氧气体注入塔的供给装置。 控制单元可以执行控制,使得除了注入还原气体之外,将臭氧气体注入到塔中持续预定的时间段。
    • 10. 发明授权
    • Electron beam exposure apparatus and method for cleaning the same
    • 电子束曝光装置及其清洗方法
    • US07737421B2
    • 2010-06-15
    • US12077153
    • 2008-03-17
    • Hiroshi YasudaYoshihisa Ooae
    • Hiroshi YasudaYoshihisa Ooae
    • G03B27/42G03B27/54
    • H01J37/3174B82Y10/00B82Y40/00H01J2237/31793
    • Provided is an electron beam exposure apparatus for forming a desired pattern on a sample mounted on a wafer stage by exposure with an electron beam generated form an electron gun. The electron beam exposure apparatus includes: supplying device of injecting a reducing gas into a column in which the electron gun and the wafer stage are housed; and control unit of performing control so that the injection of the reducing gas into the column is continued for a predetermined period of time. Organic contamination is combined with H generated from the reducing gas by irradiation of an electron beam, and then evaporates. Further included is supplying device of injecting an ozone gas into the column. The control unit may perform control so that the injection of the ozone gas into the column in addition to the injection of the reducing gas is continued for a predetermined period of time.
    • 提供一种电子束曝光装置,用于通过用电子枪产生的电子束曝光在安装在晶片台上的样品上形成所需图案。 电子束曝光装置包括:将还原气体注入到容纳电子枪和晶片台的列中的供给装置; 以及执行控制的控制单元,使得将还原气体注入到所述列中持续预定时间段。 有机污染与通过照射电子束从还原气体生成的H结合,然后蒸发。 还包括向柱中注入臭氧气体的供给装置。 控制单元可以执行控制,使得除了注入还原气体之外,将臭氧气体注入到塔中持续预定的时间段。