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1. 发明授权

US06268606B1 Electrostatic deflector, for electron beam exposure apparatus, with reduced charge-up 失效
标题翻译：静电偏转器，用于电子束曝光设备，具有减小的充电
公开(公告)号：US06268606B1
公开(公告)日：2001-07-31
申请号：US09337795
申请日：1999-06-22
申请人： Tomohiko Abe , Yoshihisa Ooae , Hiroshi Yasuda
发明人： Tomohiko Abe , Yoshihisa Ooae , Hiroshi Yasuda
IPC分类号： H01J3700
CPC分类号： H01J37/1472 , H01J2237/1516 , H01J2237/3175
摘要： An electrostatic deflector of an electron beam exposure apparatus is disclosed. A cylindrical holding member is made of an insulating material. An electrode including a plurality of electrode members fixedly arranged in spaced relationship to each other and having at least a portion of the surface thereof grown with a metal film is disposed inside the holding member. The electrode members each formed with a metal film on the surface thereof are made of a conductive ceramic having a resistivity selected at least in the range of 0.001 &OHgr;•cm to 1000 &OHgr;•cm.
摘要翻译：公开了电子束曝光设备的静电偏转器。圆柱形保持构件由绝缘材料制成。一种电极，其包括以彼此间隔开的关系固定地布置并且其表面的至少一部分由金属膜生长的多个电极部件设置在保持部件的内部。每个在其表面上由金属膜形成的电极构件由电阻率选择为至少在0.001欧姆·厘米到1000欧姆·厘米的范围内的导电陶瓷制成。

2. 发明授权

US06509568B1 Electrostatic deflector for electron beam exposure apparatus 有权
公开(公告)号：US06509568B1
公开(公告)日：2003-01-21
申请号：US09431441
申请日：1999-11-01
申请人： Yoshihisa Ooae , Hitoshi Tanaka , Takeshi Haraguchi , Kazuto Ashiwara , Tomohiko Abe , Ryoji Kato
发明人： Yoshihisa Ooae , Hitoshi Tanaka , Takeshi Haraguchi , Kazuto Ashiwara , Tomohiko Abe , Ryoji Kato
IPC分类号： H01J338
CPC分类号： H01J37/1477 , H01J2237/151
摘要： An electron beam radiation apparatus having an electrostatic deflector capable of deflecting the electron beam with high accuracy and with a reduced displacement of the deflection position, is disclosed. The electrostatic deflector comprises a cylindrical holding member made of an insulating material and a plurality of electrodes separately fixed from each other inside of the holding member with at least a part of the surface thereof covered with a metal film. The holding member has a plurality of wedge-shaped fixing holes corresponding to the portions of the electrodes where they are fixed, respectively, the holes having a larger diameter on the outer peripheral surface than on the inner peripheral surface of the holding member. The electrodes are fixed on the holding member in such a manner that a molten joining metal is injected in the fixing holes with the electrodes arranged on the holding member and the joining metal is hardened in close contact with the metal film of the electrodes. The electrodes fixed on the holding member are so shaped that the inner wall of the holding member is invisible from the cylinder axis of the holding member. The electrodes have a metal thin film formed, by vapor deposition, on the inner wall surface of the electrodes after being fixed on the holding member.

3. 发明授权

US06465796B1 Charge-particle beam lithography system of blanking aperture array type 失效
标题翻译：消隐孔径阵列型电荷粒子光刻系统
公开(公告)号：US06465796B1
公开(公告)日：2002-10-15
申请号：US09350238
申请日：1999-07-09
申请人： Takeshi Haraguchi , Tomohiko Abe , Yoshihisa Ooae
发明人： Takeshi Haraguchi , Tomohiko Abe , Yoshihisa Ooae
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/0453 , H01J2237/0458
摘要： Disclosed is a charged-particle beam lithography system in which deterioration of a BAA chip is prevented without a reduction in the magnitude of a charged-particle beam used for exposure. The charged-particle beam lithography system has a charged-particle beam emitter source and a chip having a plurality of apertures arrayed therein. The plurality of apertures shapes a charged-particle beam emitted from the emitter source so that the cross section thereof will have a predetermined shape. The charged-particle beam lithography system uses the charged-particle beam having passed through the apertures to pattern an exposed sample. The charged-particle beam lithography system includes a mask having a plurality of apertures bored therein. The plurality of apertures is arrayed in the same manner as the plurality of apertures arrayed in the chip, and has a size that is any multiple of the size of the apertures of the chip. The mask is located on a path, along which the charged-particle beam travels, between the charged-particle beam emitter source and chip.
摘要翻译：公开了一种带电粒子束光刻系统，其中防止BAA芯片的劣化，而不会减少用于曝光的带电粒子束的幅度。带电粒子束光刻系统具有带电粒子束发射源和在其中排列有多个孔的芯片。多个孔形成从发射源发射的带电粒子束，使得其截面具有预定形状。带电粒子束光刻系统使用穿过孔的带电粒子束来图案化暴露的样品。带电粒子束光刻系统包括具有在其中钻孔的多个孔的掩模。多个孔以与排列在芯片中的多个孔相同的方式排列，并且其尺寸是芯片的孔的大小的任何倍数。掩模位于带电粒子束在其上行进的路径上，在带电粒子束发射源和芯片之间。

4. 发明授权

US5949078A Charged-particle-beam exposure device and charged-particle-beam exposure method 有权
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US5949078A
公开(公告)日：1999-09-07
申请号：US131368
申请日：1998-08-07
申请人： Yoshihisa Ooaeh , Tomohiko Abe , Akio Yamada , Hiroshi Yasuda , Kenj Kudoh , Kouzi Takahata
发明人： Yoshihisa Ooaeh , Tomohiko Abe , Akio Yamada , Hiroshi Yasuda , Kenj Kudoh , Kouzi Takahata
IPC分类号： H01J37/07 , H01J37/065 , H01J37/24 , H01J37/30
CPC分类号： H01J37/241 , H01J37/065 , H01J2237/3175
摘要： An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower that the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode and the anode, and being applied with a voltage lower than the first voltage to form a cross-over image of the electron beam, the fourth aperture being larger than the third aperture.
摘要翻译：用于发射沿着光束轴线行进的电子束的电子枪包括具有尖端的阴极，该尖端具有基本上圆形的圆锥形形状和基本上在光束轴线处的尖端表面，阴极被施加第一电压，阳极具有基本上在所述光束轴上的第一孔，并且施加有高于所述第一电压的第二电压;控制电极，其具有基本上在所述光束轴上的第二孔，并施加低于所述第一电压以控制所述第一电压的电流阴极，第二孔径大于尖端表面，具有基本上在梁轴上的第三孔的引导电极设置在阴极和阳极之间，并施加有比第一电压高的电压并且低于第二电压电压，所述第三孔小于所述尖端表面，以及透镜电极，所述透镜电极具有基本上在所述光束轴上的第四孔引导电极和阳极，并施加低于第一电压的电压以形成电子束的交叉图像，第四孔径大于第三孔径。

5. 发明授权

US5770862A Charged particle exposure apparatus, and a charged particle exposure method 失效
标题翻译：带电粒子曝光装置和带电粒子曝光方法
公开(公告)号：US5770862A
公开(公告)日：1998-06-23
申请号：US758824
申请日：1996-12-04
申请人： Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda
发明人： Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda
IPC分类号： G09F21/04 , H01J37/147 , H01J37/305 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/1472 , H01J2237/1516 , H01J2237/3175 , Y10T29/49002
摘要： The present invention relates to a charged particle beam exposure apparatus, deflecting a charged particle beam formed into a predetermined shape by being passed through a predetermined transmission mask, and irradiating a predetermined location on the surface of a sample with the charged particle beam. The apparatus comprises: a mirror barrel through which the charged particle beam is passed; and an electrostatic deflector, provided in the mirror barrel, for deflecting the charged particle beam. The electrostatic deflector has a plurality of pairs of electrodes, which are made of a conductive material having carbon as a primary element and are embedded in an internal face of an insulating cylinder. The present invention also relates to a method for forming the electrostatic deflector.
摘要翻译：带电粒子束曝光装置技术领域本发明涉及一种带电粒子束曝光装置，其通过穿过预定的透射掩模使形成为预定形状的带电粒子束偏转，并用带电粒子束照射样品表面上的预定位置。该装置包括：经过带电粒子束的反射镜筒; 以及设置在镜筒中的用于偏转带电粒子束的静电偏转器。静电偏转器具有多对电极，它们由具有碳作为主要元件的导电材料制成，并且嵌入绝缘筒的内表面。本发明还涉及一种用于形成静电偏转器的方法。

6. 发明授权

US5614725A Charged particle beam exposure system and method 失效
标题翻译：带电粒子束曝光系统及方法
公开(公告)号：US5614725A
公开(公告)日：1997-03-25
申请号：US610190
申请日：1996-03-04
申请人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
发明人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
IPC分类号： H01J37/147 , H01J37/30 , H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/0435 , H01J2237/30416 , H01J2237/31762 , H01L2223/54466
摘要： A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.
摘要翻译：带电粒子束曝光方法包括以下步骤：创建指示要曝光的图案的点阵图形数据，将点图案数据存储在具有第一存取速度的第一存储装置中，将点图案数据从第一存储装置传送到第二存储装置具有第二较高访问速度，从第二存储装置读出点阵图形数据，并响应于通过消隐从第二存储装置读出的点图形数据产生多个带电粒子束孔径阵列，其中消隐孔阵列包括多个孔，每个孔响应于点图案数据而导致与孔相关的改变的粒子束的导通和关断。

7. 发明授权

US6118129A Method and system for exposing an exposure pattern on an object by a charged particle beam which is shaped into a plurality of beam elements 有权
标题翻译：用于通过成形为多个光束元件的带电粒子束曝光物体上的曝光图案的方法和系统
公开(公告)号：US6118129A
公开(公告)日：2000-09-12
申请号：US283974
申请日：1999-04-01
申请人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
发明人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
IPC分类号： H01J37/147 , H01J37/30 , H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/0435 , H01J2237/30416 , H01J2237/31762 , H01L2223/54466
摘要： A method for exposing an exposure pattern on an object by a charged particle beam, including the steps of: shaping a charged particle beam into a plurality of charged particle beam elements in response to first bitmap data indicative of an exposure pattern, such that the plurality of charged particle beam elements are selectively turned off in response to the first bitmap data; focusing the charged particle beam elements upon a surface of an object; and scanning the surface of the object by the charged particle beam elements; the step of shaping including the steps of: expanding pattern data of said exposure pattern into second bitmap data having a resolution of n times (n.gtoreq.2) as large as, and m times (m.gtoreq.1) as large as, a corresponding resolution of the first bitmap data, respectively in X- and Y-directions; dividing the second bitmap data into cells each having a size of 2n bits in the X-direction and 2m bits in said Y-direction; and creating the first bitmap data from the second bitmap data by selecting four data bits from each of the cells, such that a selection of the data bits is made in each of the cells with a regularity in the X- and Y-directions and such that the number of rows in the X-direction and the number of columns in the Y-direction are both equal to 3 or more.
摘要翻译：一种用于通过带电粒子束曝光在物体上的曝光图案的方法，包括以下步骤：响应于指示曝光图案的第一位图数据，将带电粒子束成形为多个带电粒子束元件，使得多个响应于第一位图数据选择性地关闭带电粒子束元件; 将带电粒子束元件聚焦在物体的表面上; 并通过带电粒子束元件扫描物体的表面; 整形步骤包括以下步骤：将所述曝光图案的图案数据扩展为分辨率为n倍（n> / = 2）分辨率的第二位图数据，并且m倍（m> / = 1），分别在X和Y方向上分别对应的第一位图数据的分辨率; 将第二位图数据分割成在X方向上具有2n位大小和在所述Y方向上具有2m位的单元，以及通过从每个单元中选择四个数据位来从第二位图数据创建第一位图数据，使得在每个单元格中以X方向和Y方向上的规则性进行数据位的选择， X方向上的行数和Y方向上的列数都等于3或更大。

8. 发明授权

US5872366A Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US5872366A
公开(公告)日：1999-02-16
申请号：US908699
申请日：1997-08-08
申请人： Yoshihisa Ooaeh , Tomohiko Abe , Akio Yamada , Hiroshi Yasuda , Kenj Kudoh , Kouzi Takahata
发明人： Yoshihisa Ooaeh , Tomohiko Abe , Akio Yamada , Hiroshi Yasuda , Kenj Kudoh , Kouzi Takahata
IPC分类号： H01J37/07 , H01J37/065 , H01J37/24 , H01J37/30 , H01J37/09
CPC分类号： H01J37/241 , H01J37/065 , H01J2237/3175
摘要： An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower than the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode and the anode, and being applied with a voltage lower than the first voltage to form a cross-over image of the electron beam, the fourth aperture being larger than the third aperture.
摘要翻译：用于发射沿着光束轴线行进的电子束的电子枪包括具有尖端的阴极，该尖端具有基本上圆形的圆锥形形状和基本上在光束轴线处的尖端表面，阴极被施加第一电压，阳极具有基本上在所述光束轴上的第一孔，并施加高于所述第一电压的第二电压;控制电极，其具有基本上在所述光束轴上的第二孔，并施加低于所述第一电压的电压以控制所述第一电压的电流阴极，第二孔径大于尖端表面，具有基本上在梁轴上的第三孔的引导电极设置在阴极和阳极之间，并施加有比第一电压高的电压并且低于第二电压电压，所述第三孔小于所述尖端表面，以及透镜电极，所述透镜电极具有基本上在所述光束轴上的第四孔引导电极和阳极，并施加低于第一电压的电压以形成电子束的交叉图像，第四孔径大于第三孔径。

9. 发明授权

US5721432A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5721432A
公开(公告)日：1998-02-24
申请号：US670256
申请日：1996-06-20
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间的开关电阻来减小放大器的输出的阶跃变化期间的设定时间，在D / A的输出的阶跃变化期间产生的毛刺波形转换器在放大器的前级被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步进变化，偏转通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加面积，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标转换来缩小对准时间在晶片区域和芯片区域。为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

10. 发明授权

US5590048A Block exposure pattern data extracting system and method for charged particle beam exposure 失效
标题翻译：块曝光图案数据提取系统和带电粒子束曝光的方法
公开(公告)号：US5590048A
公开(公告)日：1996-12-31
申请号：US71262
申请日：1993-06-04
申请人： Tomohiko Abe , Hiroshi Yasuda , Kiichi Sakamoto , Yoshihisa Oae
发明人： Tomohiko Abe , Hiroshi Yasuda , Kiichi Sakamoto , Yoshihisa Oae
IPC分类号： H01J37/302 , G06F17/50 , G06K9/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/0458 , H01J2237/31776
摘要： In a block exposure pattern extracting system applied to a charged-particle beam exposure system having a block mask including a plurality of transparent stats having different shapes, a comparator unit compares first vectors connecting one of apexes of an input exposure pattern to other apexes thereof with second vectors connecting a reference point which is one of apexes of a unit block exposure pattern to other apexes of the unit block exposure pattern. A determining unit determines whether or not the first vectors coincide with the second vectors. An extracting unit extracts the input exposure pattern as the unit block exposure pattern when the determining unit determines that the first vectors coincide with the second vectors.
摘要翻译：在应用于具有包括具有不同形状的多个透明统计数据的块掩模的带电粒子束曝光系统的块曝光图案提取系统中，比较器单元将连接输入曝光图案的顶点之一与其他顶点的第一矢量与将单位块曝光图案的顶点之一的参考点连接到单位块曝光图案的其他顶点的第二矢量。确定单元确定第一矢量是否与第二矢量一致。当确定单元确定第一向量与第二向量一致时，提取单元提取输入的曝光图案作为单位块曝光图案。

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