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1. 发明授权

US06252344B1 Electron gun used in an electron beam exposure apparatus 有权
标题翻译：用于电子束曝光装置的电子枪
公开(公告)号：US06252344B1
公开(公告)日：2001-06-26
申请号：US09335398
申请日：1999-06-17
申请人： Yoshihisa Ooae , Takamasa Satoh , Akio Yamada , Hiroshi Yasuda
发明人： Yoshihisa Ooae , Takamasa Satoh , Akio Yamada , Hiroshi Yasuda
IPC分类号： H01J2976
CPC分类号： H01J37/241 , H01J2237/3175
摘要： An electron gun, preferably a four-pole electron gun, used in an electron beam exposure apparatus is formed by: a cathode for emitting an electron beam when supplying a negative and high-accelerated voltage; a first grid provided downstream of the cathode for focusing a crossover image of the electron beam when supplying a voltage which becomes a reverse bias for the cathode, and the cathode and the first grid being arranged at a high voltage side of a high voltage insulator; an anode for collecting the electron beam which passes through the first grid, and being arranged at a low voltage side of the high voltage insulator; and a second grid provided at the high voltage side of the high voltage insulator and between the first grid and the anode, and having an aperture for limiting an amount of the electron beam passing therethrough. A voltage which becomes a forward bias for the cathode is supplied to the second grid, and the crossover image is focused at the aperture of the second grid.
摘要翻译：电子束曝光装置中使用的优选四极电子枪的电子枪是通过以下方式形成的：用于在提供负高和高加速电压时发射电子束的阴极; 设置在阴极的下游的第一栅极，用于在提供成为阴极的反向偏压的电压时使聚焦电子束的交叉图像，并且阴极和第一栅极布置在高压绝缘体的高压侧; 用于收集通过第一栅格的电子束并且布置在高压绝缘体的低电压侧的阳极; 以及设置在高压绝缘子的高压侧和第一栅极与阳极之间的第二栅极，并且具有用于限制通过其中的电子束的量的孔。成为阴极的正向偏压的电压被提供给第二栅极，并且交叉图像聚焦在第二栅极的孔径处。

2. 发明授权

US07919750B2 Electron gun, electron beam exposure apparatus, and exposure method 有权
标题翻译：电子枪，电子束曝光装置和曝光方法
公开(公告)号：US07919750B2
公开(公告)日：2011-04-05
申请号：US12151500
申请日：2008-05-07
申请人： Hiroshi Yasuda , Takeshi Haraguchi , Yoshihisa Ooae , Takamasa Satoh , Yoshinori Terui , Seiichi Sakawa , Ryozo Nonogaki
发明人： Hiroshi Yasuda , Takeshi Haraguchi , Yoshihisa Ooae , Takamasa Satoh , Yoshinori Terui , Seiichi Sakawa , Ryozo Nonogaki
IPC分类号： H01J29/48 , H01J37/073
CPC分类号： H01J37/073 , H01J2237/06316 , H01J2237/06341 , H01J2237/3175
摘要： An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). The electron emission restrictive region may be covered with carbon.
摘要翻译：电子枪包括被配置为发射电子的电子源。电子源包括配置为发射电子的电子发射区域和被配置为限制电子发射的电子发射限制区域。电子发射限制区域位于电子源的除了电子源的尖端上的电子发射表面以外的电子源的侧表面上，并被与电子源不同的材料覆盖。电子枪通过向尖端施加电场而发射热场发射的电子，同时保持足够低的温度以避免电子源的材料的升华。电子源的材料可以是六硼化镧（LaB 6）或六硼化铈（CeB 6）。电子发射限制区域可以被碳覆盖。

3. 发明申请

US20080315089A1 Electron gun, electron beam exposure apparatus, and exposure method 有权
标题翻译：电子枪，电子束曝光装置和曝光方法
公开(公告)号：US20080315089A1
公开(公告)日：2008-12-25
申请号：US12151500
申请日：2008-05-07
申请人： Hiroshi Yasuda , Takeshi Haraguchi , Yoshihisa Ooae , Takamasa Satoh , Yoshinori Terui , Seiichi Sakawa , Ryozo Nonogaki
发明人： Hiroshi Yasuda , Takeshi Haraguchi , Yoshihisa Ooae , Takamasa Satoh , Yoshinori Terui , Seiichi Sakawa , Ryozo Nonogaki
IPC分类号： H01J3/02
CPC分类号： H01J37/073 , H01J2237/06316 , H01J2237/06341 , H01J2237/3175
摘要： An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). The electron emission restrictive region may be covered with carbon.
摘要翻译：电子枪包括被配置为发射电子的电子源。电子源包括配置为发射电子的电子发射区域和被配置为限制电子发射的电子发射限制区域。电子发射限制区域位于电子源的除了电子源的尖端上的电子发射表面以外的电子源的侧表面上，并被与电子源不同的材料覆盖。电子枪通过向尖端施加电场而发射热场发射的电子，同时保持足够低的温度以避免电子源的材料的升华。电子源的材料可以是六硼化镧（LaB 6）或六硼化铈（CeB 6）。电子发射限制区域可以被碳覆盖。

4. 发明申请

US20070181829A1 Electron-beam exposure system 审中-公开
标题翻译：电子束曝光系统
公开(公告)号：US20070181829A1
公开(公告)日：2007-08-09
申请号：US11650234
申请日：2007-01-05
申请人： Hitoshi Tanaka , Akio Yamada , Hiroshi Yasuda , Yoshihisa Ooae
发明人： Hitoshi Tanaka , Akio Yamada , Hiroshi Yasuda , Yoshihisa Ooae
IPC分类号： A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/045 , H01J2237/31761 , H01J2237/31776 , H01J2237/31788
摘要： An electron-beam exposure system includes: an electron gun; a first mask having a first opening for shaping a beam of electrons; a second mask having a second opening for shaping the beam of electrons; a stencil mask disposed below the first mask and the second mask, the stencil mask having a plurality of collective figured openings each for shaping the beam of electrons; a paralleling lens for causing the beam of electrons, which has been transmitted in, and come out of, the stencil mask, to turn into a beam of electrons which travels approximately in parallel to the optical axis; and a swing-back mask deflector for swinging back the beam of electrons which has passed through the stencil mask. N2>N1 may be satisfied where 1/N1 denotes the reduction ratio of a pattern in the stencil mask to a pattern on the surface of the workpiece, and 1/N2 denotes the reduction ratio of a pattern in the first mask and a pattern in the second mask to a pattern on the surface of the workpiece.
摘要翻译：电子束曝光系统包括：电子枪; 具有用于成形电子束的第一开口的第一掩模; 具有用于使电子束成形的第二开口的第二掩模; 设置在所述第一掩模和所述第二掩模下方的模板掩模，所述模版掩模具有多个用于使所述电子束成形的集合形状的开口; 用于使已经被传送到模板掩模中并从模板掩模出来的电子束的平行透镜转变成大致平行于光轴行进的电子束; 以及用于摆动穿过模板掩模的电子束的回摆掩模偏转器。可以满足其中1 / N 1表示模板掩模中的图案与图案上的图案的缩小比率的N <2> N <1> 表示工件的表面，1 / N 2 <2>表示第一掩模中的图案和第二掩模中的图案与工件表面上的图案的缩小率。

5. 发明授权

US5892237A Charged particle beam exposure method and apparatus 失效
标题翻译：带电粒子束曝光方法和装置
公开(公告)号：US5892237A
公开(公告)日：1999-04-06
申请号：US815436
申请日：1997-03-11
申请人： Kenichi Kawakami , Hiroshi Yasuda , Akio Yamada , Tatsuro Ohkawa , Mitsuhiro Nakano , Atsushi Saito , Yoshihisa Ooae
发明人： Kenichi Kawakami , Hiroshi Yasuda , Akio Yamada , Tatsuro Ohkawa , Mitsuhiro Nakano , Atsushi Saito , Yoshihisa Ooae
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174
摘要： In a charged particle beam exposure method and an apparatus therefor, wherein the intensity of the charged particle beam used for irradiation is increased to a maximum to improve a throughput for an exposure procedure, accordingly, the temperature of a sample, such as a wafer, is elevated and thermal expansion occurs. The thermal expansion that occurs has reproducibility based on the intensity of the projected charged particle beam. Therefore, a coefficient of thermal expansion is detected by monitoring the intensity of the projected charged particle beam. A shifting distance for each irradiation position which is acquired from the thermal expansion is added as a compensation value for deflection of the charged particle beam, to provide an accurate exposure procedure.
摘要翻译：在带电粒子束曝光方法及其装置中，其中用于照射的带电粒子束的强度增加到最大以提高曝光程序的通过量，因此，诸如晶片的样品的温度，升高并发生热膨胀。发生的热膨胀基于投射的带电粒子束的强度具有再现性。因此，通过监视投射的带电粒子束的强度来检测热膨胀系数。将从热膨胀获取的每个照射位置的移动距离作为用于带电粒子束偏转的补偿值被添加，以提供准确的曝光程序。

6. 发明授权

US5965895A Method of providing changed particle beam exposure in which representative aligning marks on an object are detected to calculate an actual position to perform exposure 失效
标题翻译：提供改变的粒子束曝光的方法，其中检测到物体上的代表性对准标记以计算实际曝光的位置
公开(公告)号：US5965895A
公开(公告)日：1999-10-12
申请号：US964331
申请日：1997-11-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.
摘要翻译：一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

7. 发明授权

US5546319A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5546319A
公开(公告)日：1996-08-13
申请号：US379712
申请日：1995-01-27
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间切换电阻来减小放大器的输出阶跃变化期间的设定时间，在输出的阶跃变化期间产生的毛刺波形或D / 在放大器的前级的A转换器被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步长变化，通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标在晶片区域和芯片区域中的转换。为了校正电磁透镜的散光，设置两级或线圈，并将与偏转量相对应的电流提供给线圈。

8. 发明授权

US5444257A Electron-beam exposure system for reduced distortion of electron beam spot 失效
标题翻译：电子束曝光系统，减少电子束斑变形
公开(公告)号：US5444257A
公开(公告)日：1995-08-22
申请号：US319022
申请日：1994-10-06
申请人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
发明人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
IPC分类号： H01L21/027 , H01J37/153 , H01J37/00
CPC分类号： H01J37/153 , H01J2237/1504 , H01J2237/1532 , H01J2237/3175
摘要： An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.
摘要翻译：电子束曝光系统包括像散补偿电路，其增加施加在形成静电副偏转器的一对电极上的电压，并且同时降低施加在形成相同静电副偏转器的另一对电极上施加的电压，其具有与在增加电压的情况下，其中电压变化的大小响应于由主偏转器引起的电子束的偏转而改变。

9. 发明授权

US5721432A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5721432A
公开(公告)日：1998-02-24
申请号：US670256
申请日：1996-06-20
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间的开关电阻来减小放大器的输出的阶跃变化期间的设定时间，在D / A的输出的阶跃变化期间产生的毛刺波形转换器在放大器的前级被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步进变化，偏转通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加面积，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标转换来缩小对准时间在晶片区域和芯片区域。为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

10. 发明授权

US5631113A Electron-beam exposure system for reduced distortion of electron beam spot 失效
标题翻译：电子束曝光系统，减少电子束斑变形
公开(公告)号：US5631113A
公开(公告)日：1997-05-20
申请号：US435157
申请日：1995-05-05
申请人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
发明人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
IPC分类号： H01L21/027 , H01J37/153 , G03L5/00 , H01J37/00
CPC分类号： H01J37/153 , H01J2237/1504 , H01J2237/1532 , H01J2237/3175
摘要： An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.
摘要翻译：电子束曝光系统包括像散补偿电路，其增加施加在形成静电副偏转器的一对电极上的电压，并且同时降低施加在形成相同静电副偏转器的另一对电极上施加的电压，其具有与在增加电压的情况下，其中电压变化的大小响应于由主偏转器引起的电子束的偏转而改变。

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