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1. 发明授权

US07148138B2 Method of forming contact hole and method of manufacturing semiconductor device 失效
标题翻译：形成接触孔的方法和制造半导体器件的方法
公开(公告)号：US07148138B2
公开(公告)日：2006-12-12
申请号：US10969996
申请日：2004-10-22
申请人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： H01L21/4763
CPC分类号： G03F7/70425 , G03F7/70466 , H01L21/76816
摘要： A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.
摘要翻译：一种通过使用包括光源，孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法，来自照明系统的光入射的光掩模和用于将来自光掩模的光投射到基板上，包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜，以及具有相对于中心点对称布置的光传输部分的第一孔第一个方向显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜，并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。

2. 发明申请

US20050153540A1 Method of forming contact hole and method of manufacturing semiconductor device 失效
标题翻译：形成接触孔的方法和制造半导体器件的方法
公开(公告)号：US20050153540A1
公开(公告)日：2005-07-14
申请号：US10969996
申请日：2004-10-22
申请人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： G03F7/26 , G03F7/20 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： G03F7/70425 , G03F7/70466 , H01L21/76816
摘要： A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.
摘要翻译：一种通过使用包括光源，孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法，来自照明系统的光入射的光掩模和用于将来自光掩模的光投射到基板上，包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜，以及具有相对于中心点对称布置的光传输部分的第一孔第一个方向显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜，并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。

3. 发明授权

US07186485B2 Inspection method and a photomask 失效
标题翻译：检验方法和光掩模
公开(公告)号：US07186485B2
公开(公告)日：2007-03-06
申请号：US10615228
申请日：2003-07-09
申请人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F7/70566 , G03F7/706
摘要： An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.
摘要翻译：一种检查方法，包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光，将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上，从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。

4. 发明授权

US07556896B2 Inspection method and photomask 失效
标题翻译：检验方法和光掩模
公开(公告)号：US07556896B2
公开(公告)日：2009-07-07
申请号：US11606121
申请日：2006-11-30
申请人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： G03F9/00
CPC分类号： G03F7/70566 , G03F7/706
摘要： An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.
摘要翻译：一种检查方法，包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光，将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上，从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。

5. 发明申请

US20070071306A1 Inspection method and photomask 失效
标题翻译：检验方法和光掩模
公开(公告)号：US20070071306A1
公开(公告)日：2007-03-29
申请号：US11606121
申请日：2006-11-30
申请人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： G03F1/00 , G03C5/00 , G06K9/00
CPC分类号： G03F7/70566 , G03F7/706
摘要： An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.
摘要翻译：一种检查方法，包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光，将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上，从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。

6. 发明授权

US08077292B2 Projection exposure method 失效
标题翻译：投影曝光法
公开(公告)号：US08077292B2
公开(公告)日：2011-12-13
申请号：US12395513
申请日：2009-02-27
申请人： Yosuke Kitamura , Masaki Satake , Shoji Mimotogi , Kazuya Fukuhara
发明人： Yosuke Kitamura , Masaki Satake , Shoji Mimotogi , Kazuya Fukuhara
IPC分类号： G03B27/52
CPC分类号： G03B27/42 , G03B27/72
摘要： A projection exposure method that projects the shape of a hole onto a wafer by projecting a diffracted light, which is produced by applying light to a mask having a pattern for forming a hole pattern, onto the wafer through a projection optical system for exposure, wherein, in a plane substantially perpendicular to an optical axis, the light applied to the mask has a first intensity distribution in which the intensity is higher in the vicinity of eight apexes of an octagon centered at the optical axis than in other areas, the mask has a plurality of first opening patterns are arranged in a rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis, and a plurality of second opening patterns are arranged in a face-centered rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis.
摘要翻译：一种投影曝光方法，其通过将通过将具有用于形成孔图案的图案的掩模施加光而产生的衍射光投射到晶片上的投影光学系统进行曝光，将衍射光投射到晶片上，其中在基本上垂直于光轴的平面中，施加到掩模的光具有第一强度分布，其中在光轴中心的八边形的八个顶点附近的强度比在其他区域中的强度高，掩模具有多个第一开口图案被布置成矩形格子构型，其具有平行于通过光轴的八边形的对角线的边，并且多个第二开口图案以面向中心的矩形格子构造布置，具有平行于八角形通过光轴。

7. 发明授权

US07685556B2 Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method 失效
标题翻译：掩模数据校正方法，光掩模制造方法，计算机程序，光学图像预测方法，抗蚀剂图案形状预测方法和半导体器件制造方法
公开(公告)号：US07685556B2
公开(公告)日：2010-03-23
申请号：US11062437
申请日：2005-02-23
申请人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
发明人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70133 , G03F7/70433
摘要： According to an aspect of the invention, there is provided a mask data correction method used when forming a photomask used in a photolithography process, comprising correcting mask data on the basis of simulation performed by using information including nonuniformity of an illumination luminance distribution in an exposure apparatus which uses the photomask formed by using the mask data obtained by the correction result.
摘要翻译：根据本发明的一个方面，提供了一种掩模数据校正方法，该方法在形成光刻工艺中使用的光掩模时使用，包括：基于通过使用包括曝光中的照度亮度分布的不均匀性的信息进行的模拟来校正掩模数据使用通过使用通过校正结果获得的掩模数据形成的光掩模的装置。

8. 发明申请

US20090244504A1 PROJECTION EXPOSURE METHOD 失效
标题翻译：投影曝光方法
公开(公告)号：US20090244504A1
公开(公告)日：2009-10-01
申请号：US12395513
申请日：2009-02-27
申请人： Yosuke Kitamura , Masaki Satake , Shoji Mimotogi , Kazuya Fukuhara
发明人： Yosuke Kitamura , Masaki Satake , Shoji Mimotogi , Kazuya Fukuhara
IPC分类号： G03B27/42 , G03B27/72
CPC分类号： G03B27/42 , G03B27/72
摘要： A projection exposure method that projects the shape of a hole onto a wafer by projecting a diffracted light, which is produced by applying light to a mask having a pattern for forming a hole pattern, onto the wafer through a projection optical system for exposure, wherein, in a plane substantially perpendicular to an optical axis, the light applied to the mask has a first intensity distribution in which the intensity is higher in the vicinity of eight apexes of an octagon centered at the optical axis than in other areas, the mask has a plurality of first opening patterns are arranged in a rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis, and a plurality of second opening patterns are arranged in a face-centered rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis.
摘要翻译：一种投影曝光方法，其通过将通过将具有用于形成孔图案的图案的掩模施加光而产生的衍射光投射到晶片上的投影光学系统进行曝光，将衍射光投射到晶片上，其中在基本上垂直于光轴的平面中，施加到掩模的光具有第一强度分布，其中在光轴中心的八边形的八个顶点附近的强度比在其它区域中的强度高，掩模具有多个第一开口图案被布置成矩形格子构型，其具有平行于通过光轴的八边形的对角线的边，并且多个第二开口图案以面向中心的矩形格子构造布置，具有平行于八角形通过光轴。

9. 发明申请

US20050188341A1 Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method 失效
标题翻译：掩模数据校正方法，光掩模制造方法，计算机程序，光学图像预测方法，抗蚀剂图案形状预测方法和半导体器件制造方法
公开(公告)号：US20050188341A1
公开(公告)日：2005-08-25
申请号：US11062437
申请日：2005-02-23
申请人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
发明人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
IPC分类号： G03F1/32 , G03F1/36 , G03F1/68 , G03F1/70 , G03F1/72 , G03F7/00 , G03F7/20 , G06F17/50 , H01L21/00 , H01L21/027
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70133 , G03F7/70433
摘要： According to an aspect of the invention, there is provided a mask data correction method used when forming a photomask used in a photolithography process, comprising correcting mask data on the basis of simulation performed by using information including nonuniformity of an illumination luminance distribution in an exposure apparatus which uses the photomask formed by using the mask data obtained by the correction result.
摘要翻译：根据本发明的一个方面，提供了一种掩模数据校正方法，该方法在形成光刻工艺中使用的光掩模时使用，包括：基于通过使用包括曝光中的照度亮度分布的不均匀性的信息进行的模拟来校正掩模数据使用通过使用通过校正结果获得的掩模数据形成的光掩模的装置。

10. 发明申请

US20110177458A1 EXPOSURE DETERMINING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT 有权
标题翻译：曝光测定方法，制造半导体器件的方法和计算机程序产品
公开(公告)号：US20110177458A1
公开(公告)日：2011-07-21
申请号：US13007238
申请日：2011-01-14
申请人： Toshiya KOTANI , Kazuya Fukuhara , Michiya Takimoto , Hidefumi Mukai , Soichi Inoue
发明人： Toshiya KOTANI , Kazuya Fukuhara , Michiya Takimoto , Hidefumi Mukai , Soichi Inoue
IPC分类号： G03F7/20 , G06F17/50
CPC分类号： G03F7/70425 , G03F7/70558
摘要： According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.
摘要翻译：根据一个实施例，获取形成在掩模上的掩模图案与期望的掩模图案之间的二维形状参数的偏差量分布作为掩模图案图。使得当在掩模经受曝光拍摄以形成基板上的图案和在基板上形成图案之后形成的基板上的图案之间的二维形状参数的偏移量适合在预定范围内时，确定曝光基于掩模图案图，在基板上形成图案的曝光中的每个位置。

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