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1. 发明授权

US07148138B2 Method of forming contact hole and method of manufacturing semiconductor device 失效
标题翻译：形成接触孔的方法和制造半导体器件的方法
公开(公告)号：US07148138B2
公开(公告)日：2006-12-12
申请号：US10969996
申请日：2004-10-22
申请人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： H01L21/4763
CPC分类号： G03F7/70425 , G03F7/70466 , H01L21/76816
摘要： A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.
摘要翻译：一种通过使用包括光源，孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法，来自照明系统的光入射的光掩模和用于将来自光掩模的光投射到基板上，包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜，以及具有相对于中心点对称布置的光传输部分的第一孔第一个方向显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜，并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。

2. 发明申请

US20050153540A1 Method of forming contact hole and method of manufacturing semiconductor device 失效
标题翻译：形成接触孔的方法和制造半导体器件的方法
公开(公告)号：US20050153540A1
公开(公告)日：2005-07-14
申请号：US10969996
申请日：2004-10-22
申请人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： G03F7/26 , G03F7/20 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： G03F7/70425 , G03F7/70466 , H01L21/76816
摘要： A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.
摘要翻译：一种通过使用包括光源，孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法，来自照明系统的光入射的光掩模和用于将来自光掩模的光投射到基板上，包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜，以及具有相对于中心点对称布置的光传输部分的第一孔第一个方向显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜，并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。

3. 发明申请

US20070234269A1 Light intensity distribution simulation method and computer program product 失效
标题翻译：光强分布模拟方法和计算机程序产品
公开(公告)号：US20070234269A1
公开(公告)日：2007-10-04
申请号：US11730102
申请日：2007-03-29
申请人： Satoshi Tanaka , Shoji Mimotogi , Takashi Sato , Soichi Inoue
发明人： Satoshi Tanaka , Shoji Mimotogi , Takashi Sato , Soichi Inoue
IPC分类号： G06F17/50
CPC分类号： G06F17/5009
摘要： A light intensity distribution simulation method for predicting an intensity distribution of light on a substrate when photomask including a pattern is irradiated with light in which a shape distribution of an effective light source is defined includes extracting plural point light sources from a shape distribution of the effective light source, entering the light emitted from each of the plural point light sources onto the pattern of the photomask, calculating an effective shape for each of the plural point light sources, the effective shape being a pattern obtained by excluding a part which is not irradiated with the light directly due to a sidewall of a pattern film including the pattern from a design shape of an aperture of the pattern, and calculating a distribution of diffraction light generated in the pattern for each of the plural point light sources by using the effective shape.
摘要翻译：一种光强度分布模拟方法，用于当定义包含图案的光掩模在基板上的光的强度分布时，其中所述光被定义为其中限定有效光源的形状分布的光包括从有效光源的形状分布中提取多个点光源光源，将从多个点光源中的每一个发射的光输入到光掩模的图案上，计算多个点光源中的每一个的有效形状，有效形状是通过排除未照射的部分获得的图案直接由于来自图案的孔的设计形状的图案的图案膜的侧壁而直接导光，并且通过使用有效形状来计算针对每个多个点光源的图案中产生的衍射光的分布。

4. 发明授权

US06252651B1 Exposure method and exposure apparatus using it 失效
标题翻译：使用曝光方法和曝光装置
公开(公告)号：US06252651B1
公开(公告)日：2001-06-26
申请号：US09437259
申请日：1999-11-10
申请人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
发明人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03B2742
CPC分类号： G03F7/70058 , G03F1/26 , G03F7/70425 , H01L21/28123 , H01L21/76816
摘要： An exposure method includes the phase-shifting mask supply step, the phase-shifting mask being prepared by selectively forming a light-shielding portion and a phase shifter on a substrate, and the resist exposure step of performing both exposure of a resist by dark field illumination light and exposure of the resist by bright field illumination light by using the phase-shifting mask, thereby removing residual resist generated by the influence of the edge of the phase shifter.
摘要翻译：曝光方法包括相移掩模提供步骤，通过在基板上选择性地形成遮光部分和移相器来制备相移掩模，以及抗蚀剂曝光步骤，通过暗场曝光抗蚀剂通过使用移相掩模通过亮场照明光照射光和抗蚀剂曝光，从而去除由移相器的边缘的影响产生的残留抗蚀剂。

5. 发明授权

US6107013A Exposure method and exposure apparatus using it 失效
标题翻译：使用曝光方法和曝光装置
公开(公告)号：US6107013A
公开(公告)日：2000-08-22
申请号：US990097
申请日：1997-12-12
申请人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
发明人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03F1/34 , G03F1/68 , G03F7/20 , H01L21/027 , H01L21/28 , H01L21/768
CPC分类号： G03F7/70058 , G03F7/70425 , H01L21/28123 , G03F1/26 , H01L21/76816
摘要： An exposure method includes the phase-shifting mask supply step, the phase-shifting mask being prepared by selectively forming a light-shielding portion and a phase shifter on a substrate, and the resist exposure step of performing both exposure of a resist by dark field illumination light and exposure of the resist by bright field illumination light by using the phase-shifting mask, thereby removing residual resist generated by the influence of the edge of the phase shifter.
摘要翻译：曝光方法包括相移掩模提供步骤，通过在基板上选择性地形成遮光部分和移相器来制备相移掩模，以及抗蚀剂曝光步骤，通过暗场曝光抗蚀剂通过使用移相掩模通过亮场照明光照射光和抗蚀剂曝光，从而去除由移相器的边缘的影响产生的残留抗蚀剂。

6. 发明授权

US5733687A Photomask, exposing method using photomask, and manufacturing method of photomask 失效
标题翻译：光掩模，使用光掩模的曝光方法和光掩模的制造方法
公开(公告)号：US5733687A
公开(公告)日：1998-03-31
申请号：US536148
申请日：1995-09-29
申请人： Satoshi Tanaka , Shoji Mimotogi , Tadahito Fujisawa , Soichi Inoue
发明人： Satoshi Tanaka , Shoji Mimotogi , Tadahito Fujisawa , Soichi Inoue
IPC分类号： G03B27/54 , G03F1/32 , G03F1/68 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F7/701 , G03F7/70125 , G03F7/70283 , G03F7/70358
摘要： When a pattern to be exposed onto a wafer is a periodic pattern, a periodic mask pattern substantially twice as large as the pattern to be exposed in the wafer is formed on a photomask by means of light transmission portions and halftone portions. The halftone portions are formed such that a phase difference between exposure light transmitted through the light transmission portions and exposure light transmitted through the halftone portions is set to be substantially 180.degree.. Moreover, in order to eliminate zeroth order diffraction light, amplitude transmittance t of the halftone portion is set to t.apprxeq.A1/A2 wherein A1 is an area of the halftone portion and A2 is an area of the light transmission portion. Further, amplitude transmittance t of the halftone portion is changed, and an amount of exposure light to the photomask is controlled, so that L&S patterns and isolated patterns are simultaneously transferred onto the wafer by one photomask.
摘要翻译：当暴露在晶片上的图案是周期性图案时，通过透光部分和半色调部分在光掩模上形成基本上是待曝光晶片的图案的两倍的周期性掩模图案。半色调部分被形成为使得透过透光部分的曝光光与透过半色调部分的曝光之间的相位差被设定为大致180度。此外，为了消除零级衍射光，将半色调部分的振幅透射率t设定为t APPROX A1 / A2，其中A1是半色调部分的面积，A2是光透射部分的面积。此外，改变半色调部分的振幅透射率t，并且控制对光掩模的曝光量，使得L＆S图案和隔离图案通过一个光掩模同时转印到晶片上。

7. 发明授权

US07596776B2 Light intensity distribution simulation method and computer program product 失效
标题翻译：光强分布模拟方法和计算机程序产品
公开(公告)号：US07596776B2
公开(公告)日：2009-09-29
申请号：US11730102
申请日：2007-03-29
申请人： Satoshi Tanaka , Shoji Mimotogi , Takashi Sato , Soichi Inoue
发明人： Satoshi Tanaka , Shoji Mimotogi , Takashi Sato , Soichi Inoue
IPC分类号： G06F17/50
CPC分类号： G06F17/5009
摘要： A light intensity distribution simulation method for predicting an intensity distribution of light on a substrate when photomask including a pattern is irradiated with light in which a shape distribution of an effective light source is defined includes extracting plural point light sources from a shape distribution of the effective light source, entering the light emitted from each of the plural point light sources onto the pattern of the photomask, calculating an effective shape for each of the plural point light sources, the effective shape being a pattern obtained by excluding a part which is not irradiated with the light directly due to a sidewall of a pattern film including the pattern from a design shape of an aperture of the pattern, and calculating a distribution of diffraction light generated in the pattern for each of the plural point light sources by using the effective shape.
摘要翻译：一种光强度分布模拟方法，用于当定义包含图案的光掩模在基板上的光的强度分布时，其中所述光被定义为其中限定有效光源的形状分布的光包括从有效光源的形状分布中提取多个点光源光源，将从多个点光源中的每一个发射的光输入到光掩模的图案上，计算多个点光源中的每一个的有效形状，有效形状是通过排除未照射的部分获得的图案直接由于来自图案的孔的设计形状的图案的图案膜的侧壁而直接导光，并且通过使用有效形状来计算针对每个多个点光源的图案中产生的衍射光的分布。

8. 发明授权

US07090949B2 Method of manufacturing a photo mask and method of manufacturing a semiconductor device 有权
标题翻译：制造光掩模的方法和制造半导体器件的方法
公开(公告)号：US07090949B2
公开(公告)日：2006-08-15
申请号：US10724738
申请日：2003-12-02
申请人： Shigeki Nojima , Shoji Mimotogi , Satoshi Tanaka , Toshiya Kotani , Shigeru Hasebe , Koji Hashimoto , Soichi Inoue , Osamu Ikenaga
发明人： Shigeki Nojima , Shoji Mimotogi , Satoshi Tanaka , Toshiya Kotani , Shigeru Hasebe , Koji Hashimoto , Soichi Inoue , Osamu Ikenaga
IPC分类号： G01F9/00
CPC分类号： G03F1/36 , G03F1/68
摘要： Disclosed is a method of manufacturing a photo mask comprising preparing mask data for a mask pattern to be formed on a mask substrate, calculating edge moving sensitivity with respect to each of patterns included in the mask pattern using the mask data, the edge moving sensitivity corresponding to a difference between a proper exposure dose and an exposure dose to be set when a pattern edge varies, determining a monitor portion of the mask pattern, based on the calculated edge moving sensitivity, actually forming the mask pattern on the mask substrate, acquiring a dimension of a pattern included in that portion of the mask pattern formed on the mask substrate which corresponds to the monitor portion, determining evaluation value for the mask pattern formed on the mask substrate, based on the acquired dimension, and determining whether the evaluation value satisfies predetermined conditions.
摘要翻译：公开了一种制造光掩模的方法，其包括：对掩模基板上形成的掩模图案准备掩模数据，使用掩模数据计算相对于包含在掩模图案中的每个图案的边缘移动灵敏度，边缘移动灵敏度对应对于在图案边缘变化时要设置的适当曝光剂量和曝光剂量之间的差异，基于计算出的边缘移动灵敏度确定掩模图案的监视部分，实际在掩模基板上形成掩模图案，获取基于所获取的尺寸，确定在掩模基板上形成的掩模图案的评估值，并且确定评估值是否满足的掩模图案的形成在掩模基板上的对应于监视部分的掩模图案的部分中的图案的尺寸预定条件。

9. 发明授权

US5889678A Topography simulation method 失效
标题翻译：地形模拟方法
公开(公告)号：US5889678A
公开(公告)日：1999-03-30
申请号：US855814
申请日：1997-05-12
申请人： Soichi Inoue , Satoshi Tanaka , Shoji Mimotogi , Yasunobu Onishi
发明人： Soichi Inoue , Satoshi Tanaka , Shoji Mimotogi , Yasunobu Onishi
IPC分类号： G03F7/20 , G06F17/50 , H01L21/00 , H01L21/027
CPC分类号： G06F17/5018
摘要： In a topography simulation method, the topography of a resist pattern after curing treatment can be precisely estimated without producing a complex physical model or performing parameter measurement. Specifically, in the method of estimating the topography of a resist pattern, which is formed by selectively removing a part of a resist provided on a substrate and contracts due to curing treatment, the resist pattern is divided into a plurality of cells and the cells are contracted in accordance with a volume shrinkage amount per unit volume of the resist in the curing treatment. Then, the cells located closer to an interface between the substrate and the resist pattern are flattened to a higher degree in parallel to the substrate, and the deformed cells are brought together toward a shrinkage reference line passing through a center of a line pattern and toward the substrate.
摘要翻译：在地形模拟方法中，可以精确地估计固化处理后的抗蚀剂图案的形貌，而不产生复杂的物理模型或进行参数测量。具体地，在通过选择性地去除设置在基板上的抗蚀剂的一部分并且由于固化处理而收缩而形成的抗蚀剂图案的形貌的估计方法中，抗蚀剂图案被分成多个单元，并且单元是根据固化处理中的抗蚀剂的单位体积的体积收缩量收缩。然后，更靠近基板和抗蚀剂图案之间的界面的单元平行于基板平坦化，并且将变形的单元一起朝向通过线图案的中心的收缩参考线并朝向底物。

10. 发明授权

US07560197B2 Mask pattern data producing method, patterning method, reticle correcting method, reticle manufacturing method, and semiconductor apparatus manufacturing method 失效
标题翻译：掩模图案数据制作方法，图案形成方法，掩模版修正方法，掩模版制造方法和半导体装置的制造方法
公开(公告)号：US07560197B2
公开(公告)日：2009-07-14
申请号：US11061599
申请日：2005-02-22
申请人： Hiroko Nakamura , Toshiya Kotani , Satoshi Tanaka , Shoji Mimotogi
发明人： Hiroko Nakamura , Toshiya Kotani , Satoshi Tanaka , Shoji Mimotogi
IPC分类号： G03F1/06
CPC分类号： G03F7/0035 , G03F1/92 , G03F7/40
摘要： A mask pattern data producing method is disclosed, which comprises preparing design pattern data in which contact holes are arranged on part of the grid points in matrix, preparing first mask pattern data in which first opening patterns are arranged on all of the grid points, and designing second mask pattern data in which second opening patterns and third opening patterns are arranged, the second opening patterns being arranged on the grid points at which the contact holes are arranged in the design pattern data to include the first opening patterns, the third opening patterns being arranged on a pair of grid points, which is a pair of diagonal grid points only on which the contact holes are arranged in a unit grid formed by four grid points, to include the first opening patterns arranged on the pair of grid points, in place of the second opening patterns.
摘要翻译：公开了一种掩模图案数据制作方法，其特征在于，准备设置图形数据，其中接触孔被布置在矩阵中的网格点的一部分上，准备在所有网格点上布置第一开口图案的第一掩模图案数据，以及设计其中布置有第二开口图案和第三开口图案的第二掩模图案数据，第二开口图案布置在布置在设计图案数据中的接触孔的网格点上以包括第一开口图案，第三开口图案布置在一对栅格点上，该对栅格点仅在其上以4个格栅点形成的单位格栅布置在其上，以包括布置在该对网格点上的第一开口图案，第二个打开模式的地方。

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