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1. 发明授权

US09216609B2 Radical etching apparatus and method 有权
标题翻译：激光刻蚀装置及方法
公开(公告)号：US09216609B2
公开(公告)日：2015-12-22
申请号：US13981277
申请日：2012-02-01
申请人： Hiroaki Inoue , Yasushi Higuchi , Michio Ishikawa
发明人： Hiroaki Inoue , Yasushi Higuchi , Michio Ishikawa
IPC分类号： B44C1/22 , H01J37/32 , H01L21/311
CPC分类号： B44C1/227 , H01J37/32192 , H01L21/31116
摘要： A radical etching apparatus comprising a vacuum chamber for a substrate to be treated; a pipe pathway, connected to the vacuum chamber, a zone for generating plasma and a gas introduction device through which N2 and at least one of H2 and NH3 can be introduced; a microwave applying microwaves to the interior of the pipe pathway; a gas introducer as a source of supply for F, between the vacuum chamber and the zone; and a shower plate. A method comprises introducing N2 and at least one of H2 and NH3 into a pipe pathway and applying microwaves. The gas mixture is decomposed by the plasma forming decomposition products as active species which react with F during transportation to the vacuum chamber to make radicals. An SiO2 layer on the substrate etched in the vacuum chamber, by irradiating the substrate with the radicals through the shower plate.
摘要翻译：一种激进蚀刻装置，包括用于待处理基板的真空室; 连接到真空室的管道，用于产生等离子体的区域和气体引入装置，通过该导入装置可以引入N 2和至少一个H 2和NH 3; 将微波应用到管道通道的内部; 作为F的供气源的气体导入器，位于真空室和区域之间; 和淋浴板。一种方法包括将N2和H2和NH3中的至少一种引入管道并施加微波。气体混合物被等离子体形成分解产物分解为活性物质，在与真空室运输过程中与F反应形成自由基。在真空室中蚀刻的衬底上的SiO 2层，通过淋浴板将自由基照射到衬底上。

2. 发明申请

US20130306599A1 RADICAL ETCHING APPARATUS AND METHOD 有权
标题翻译：放射性蚀刻装置和方法
公开(公告)号：US20130306599A1
公开(公告)日：2013-11-21
申请号：US13981277
申请日：2012-02-01
申请人： Hiroaki Inoue , Yasushi Higuchi , Michio Ishikawa
发明人： Hiroaki Inoue , Yasushi Higuchi , Michio Ishikawa
IPC分类号： B44C1/22
CPC分类号： B44C1/227 , H01J37/32192 , H01L21/31116
摘要： A radical etching apparatus comprising a vacuum chamber for a substrate to be treated; a pipe pathway, connected to the vacuum chamber, a zone for generating plasma and with a gas introduction device through which N2 and at least one of H2 and NH3 can be introduced; a microwave applying microwaves to the interior of the pipe pathway; a gas introducer as a source of supply for F, between the vacuum chamber and the zone; and a shower plate. A method comprises introducing N2 and at least one of H2 gas and NH3 into a pipe pathway and applying microwaves. The gas mixture is decomposed by the plasma forming decomposition products as active species which react with F during transportation to a the vacuum chamber to make radicals. An SiO2 layer on a the substrate etched in the vacuum chamber, by irradiating the substrate with the radicals through a the shower plate.
摘要翻译：一种激进蚀刻装置，包括用于待处理基板的真空室; 连接到真空室的管道，用于产生等离子体的区域和具有气体引入装置的管道，N2和H2和NH3中的至少一个可以通过该导入装置引入; 将微波应用到管道通道的内部; 作为F的供气源的气体导入器，位于真空室和区域之间; 和淋浴板。一种方法包括将N 2和至少一种H 2气和NH 3引入管道并施加微波。气体混合物被等离子体形成分解产物分解为活性物质，它们在与真空室运输过程中与F反应形成自由基。在真空室中蚀刻的基板上的SiO 2层，通过喷淋板照射基板。

3. 发明授权

US08669191B2 Method for forming Ni film 有权
标题翻译：镍膜形成方法
公开(公告)号：US08669191B2
公开(公告)日：2014-03-11
申请号：US13445450
申请日：2012-04-12
申请人： Toshimitsu Uehigashi , Yasushi Higuchi , Michio Ishikawa , Harunori Ushikawa , Naoki Hanada
发明人： Toshimitsu Uehigashi , Yasushi Higuchi , Michio Ishikawa , Harunori Ushikawa , Naoki Hanada
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/18 , H01L21/28518 , H01L21/28556 , H01L21/28562
摘要： A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), H2 gas and NH3 gas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280° C. and not higher than 350° C.
摘要翻译：本文公开了形成Ni膜的方法，其包括以下步骤：在真空室中将Si衬底的温度保持在期望的水平; 将真空室中的烷基酰胺化镍引入（在该有机金属化合物中，烷基是选自甲基，乙基，丁基和丙基的基团），H 2气和NH 3气 ; 然后根据CVD技术形成Ni膜，其中成膜温度设定在高于280℃且不高于350℃的水平。

4. 发明申请

US20120264310A1 METHOD FOR FORMING NI FILM 有权
标题翻译：形成NI膜的方法
公开(公告)号：US20120264310A1
公开(公告)日：2012-10-18
申请号：US13445450
申请日：2012-04-12
申请人： Toshimitsu Uehigashi , Yasushi Higuchi , Michio Ishikawa , Harunori Ushikawa , Naoki Hanada
发明人： Toshimitsu Uehigashi , Yasushi Higuchi , Michio Ishikawa , Harunori Ushikawa , Naoki Hanada
IPC分类号： H01L21/31
CPC分类号： C23C16/18 , H01L21/28518 , H01L21/28556 , H01L21/28562
摘要： A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), H2 gas and NH3 gas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280° C. and not higher than 350° C.
摘要翻译：本文公开了形成Ni膜的方法，其包括以下步骤：在真空室中将Si衬底的温度保持在期望的水平; 将真空室中的烷基酰胺化镍引入（在该有机金属化合物中，烷基是选自甲基，乙基，丁基和丙基的基团），H 2气和NH 3气 ; 然后根据CVD技术形成Ni膜，其中成膜温度设定在高于280℃且不高于350℃的水平。

5. 发明授权

US4832810A Co-based alloy sputter target and process of manufacturing the same 失效
标题翻译： Co基合金溅射靶及其制造方法
公开(公告)号：US4832810A
公开(公告)日：1989-05-23
申请号：US70441
申请日：1987-07-07
申请人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani , Yasushi Higuchi
发明人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani , Yasushi Higuchi
IPC分类号： C22F1/10 , C23C14/34
CPC分类号： C23C14/3414 , C22F1/10
摘要： A Co-based alloy sputter target comprising a f.c.c. phase and a h.c.p. phase, wherein the value of th ratio of X-ray diffraction peak intensity, I.sub.fcc(200) /I.sub.hcp(101), is smaller than the value of the same ratio in a Co-based alloy obtained by cooling a Co-based alloy having a f.c.c. single phase to room temperature from the high temperature at which it is in a melted state.The target is manufactured by subjecting to cold-working treatment a Co-based alloy obtained by cooling a Co-based alloy material having a f.c.c. single phase from its melting temperature.
摘要翻译：一种Co基合金溅射靶，其包括直角相和h.c. 相，其中X射线衍射峰强度值Ifcc（200）/ Ihcp（101）的th值小于通过冷却具有第一相的Co基合金获得的Co基合金中相同比例的值，一个fcc 从处于熔融状态的高温到单相至室温。目标是通过对通过冷却具有直角角度的Co基合金材料获得的Co基合金进行冷加工处理来制造的。单相从其熔融温度。

6. 发明申请

US20100317189A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100317189A1
公开(公告)日：2010-12-16
申请号：US12676322
申请日：2008-09-03
申请人： Hideaki Zama , Michio Ishikawa , Takumi Kadota , Chihiro Hasegawa
发明人： Hideaki Zama , Michio Ishikawa , Takumi Kadota , Chihiro Hasegawa
IPC分类号： H01L21/768
CPC分类号： C23C16/18 , C23C16/045 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L29/7833
摘要： Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S12). Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S14).
摘要翻译：公开了一种制造半导体器件的方法，该半导体器件具有降低含有含钌膜和含铜膜的铜布线的电阻，从而提高了可靠性。还公开了一种用于制造半导体器件的装置。具体地说，通过使用含有由通式表示的有机钌络合物和还原气体的原料的CVD法，在具有凹部的基板上形成Ru膜（步骤S12）。然后，通过CVD法使用含有通式表示的有机铜络合物的原料和还原气体在Ru膜上形成Cu膜，从而在凹陷部中形成含有Ru膜和Cu膜的铜布线部分（步骤S14）。

7. 发明申请

US20090120787A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090120787A1
公开(公告)日：2009-05-14
申请号：US12352011
申请日：2009-01-12
申请人： Yoshihiro OKAMURA , Satoru Toyoda , Michio Ishikawa
发明人： Yoshihiro OKAMURA , Satoru Toyoda , Michio Ishikawa
IPC分类号： C23C14/34
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/185 , H01L21/2855 , H01L21/76831 , H01L21/76844 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L21/76877 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A barrier film of a semiconductor device is formed. The present invention forms a middle layer having copper as a main component and including a predetermined quantity of diffusible metal with the addition of a reaction gas, by sputtering an alloy target having copper as a main component with the addition of a diffusible metal, while supplying a reaction gas including oxygen or nitrogen. Since contents of the diffusible metal are accurately controlled when heating the middle layer, the barrier film is certainly formed. Additionally, the reaction gas is added to the middle layer so that the reactivity of the diffusible metal becomes high; and accordingly, it is possible to form the barrier film at a heating temperature lower than the conventional art.
摘要翻译：形成半导体器件的阻挡膜。本发明通过溅射具有铜作为主要成分的合金靶，通过添加可扩散金属，形成以铜为主要成分并包含预定量的可扩散金属并添加反应气体的中间层，同时供给包括氧或氮的反应气体。由于在加热中间层时能够精确地控制可扩散金属的含量，因此肯定形成阻挡膜。另外，将反应气体添加到中间层，使得可扩散金属的反应性变高; 因此，可以在比传统技术更低的加热温度下形成阻挡膜。

8. 发明授权

US6061020A Method and apparatus for transmitting radio wave by rotating plane of polarization 失效
标题翻译：通过旋转偏振平面发射无线电波的方法和装置
公开(公告)号：US6061020A
公开(公告)日：2000-05-09
申请号：US995044
申请日：1997-10-31
申请人： Iwao Ishijima , Yasubumi Kanai , Michio Ishikawa , Akira Tsutsumi , Shigeki Sugiyama , Toshio Miyoshi
发明人： Iwao Ishijima , Yasubumi Kanai , Michio Ishikawa , Akira Tsutsumi , Shigeki Sugiyama , Toshio Miyoshi
IPC分类号： H04B15/00 , H04B7/00 , H04B7/10 , H01Q21/06 , H04B1/10 , H04B7/01
CPC分类号： H04B7/10
摘要： At a transmitting end, first and second dipole antennas are crossed each other by right angles and are arranged in a plane perpendicular to a propagating direction of radio wave. In first and second balanced modulators, a carrier signal is modulated with respective modulation signals having a phase difference of 90.degree. to produce balanced-modulated signals, which are then supplied to the first and second dipole antennas, respectively. Then a plane of polarization of a composite vector of radio waves transmitted by the dipole antennas is rotated at a frequency of the modulation signals, said frequency being higher than a fading frequency. The modulation signals are controlled by a state of a digital signal to be transmitted. At a receiving end, the digital signal is reproduced by receiving the transmitted radio wave by a conventional single side band receiver.
摘要翻译：在发送端，第一和第二偶极子天线彼此交叉成直角，并且布置在与无线电波的传播方向垂直的平面中。在第一和第二平衡调制器中，使用具有90°相位差的相应调制信号对载波信号进行调制，以产生平衡调制信号，然后将其分别提供给第一和第二偶极子天线。然后由偶极天线发送的无线电波的复合矢量的偏振平面以调制信号的频率旋转，所述频率高于衰落频率。调制信号由要发送的数字信号的状态控制。在接收端，通过传统的单边带接收机接收发送的无线电波来再现数字信号。

9. 发明授权

US5606255A Hall effect sensing apparatus for moving object having an adjustable magnetor yoke 失效
标题翻译：具有可调节磁轭的移动体的霍尔效应传感装置
公开(公告)号：US5606255A
公开(公告)日：1997-02-25
申请号：US28965
申请日：1993-03-10
申请人： Nobuyuki Shimbo , Junichi Ishiwata , Takatoshi Oyama , Fumio Ono , Michio Ishikawa
发明人： Nobuyuki Shimbo , Junichi Ishiwata , Takatoshi Oyama , Fumio Ono , Michio Ishikawa
IPC分类号： G01D5/245 , G01D5/14 , G01P3/488 , G01B7/14 , G01R33/06
CPC分类号： G01D5/147
摘要： A Hall effect sensing apparatus for a moving object includes a moving magnetic member having concave and convex segments alternately at is periphery, a detector including a pair of Hall effect elements for converting a magnetic signal to an electric signal, a processing circuit for processing signals from the detector, a magnet for providing magnetic field to the Hall effect elements, and a yoke provided in close proximity to the magnet. The yoke has a smaller surface area than that of the magnet and is movably arranged so as to adjust detecting sensitivity of the sensing apparatus. Therefore, even though there are some variances of magnetic characteristics in the detector, the detecting sensitivity of the sensing apparatus can be adjusted to an optimum level by observing a signal outputted from the processing circuit.
摘要翻译：一种用于移动物体的霍尔效应感测装置包括：在周边交替地具有凹凸段的移动磁性部件，包括用于将磁信号转换为电信号的一对霍尔效应元件的检测器，用于处理来自检测器，用于向霍尔效应元件提供磁场的磁体和靠近磁体设置的磁轭。轭具有比磁体更小的表面积，并且可移动地布置，以便调节检测装置的检测灵敏度。因此，即使在检测器中存在磁特性的一些变化，也可以通过观察从处理电路输出的信号将感测装置的检测灵敏度调整到最佳水平。

10. 发明授权

US5554418A Method of forming passivation film 失效
标题翻译：钝化膜形成方法
公开(公告)号：US5554418A
公开(公告)日：1996-09-10
申请号：US310760
申请日：1994-09-27
申请人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
发明人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
IPC分类号： C08J7/06 , C01B33/12 , C23C16/40 , G11B5/72 , G11B5/73 , G11B5/738 , G11B5/84 , G11B7/26 , B05D3/06 , C23C16/00
CPC分类号： C23C16/402
摘要： A passivation film is formed by plasma CVD process in which organic oxysilane is used as a raw gas. When an SiO.sub.2 film as the passivation film is formed on a surface of a substrate, Ar, He or NH.sub.3 gas is used as a reactive gas which serves as an auxiliary for decomposing the raw gas. Ashing of the substrate by oxygen or hydrogen radicals is thus prevented. Fluorine group gas of CF.sub.4 or NF.sub.3 may be added to the reactive gas. The SiO.sub.2 film as a passivation film as described above may be formed first as an initial passivation film and then another passivation film may be formed on top of the initial passivation film by using a reactive gas having an ashing effect such as O.sub.2, N.sub.2 O, O.sub.3 and H.sub.2.
摘要翻译：通过等离子体CVD工艺形成钝化膜，其中使用有机氧化硅作为原料气体。当在基板的表面上形成作为钝化膜的SiO 2膜时，使用Ar，He或NH 3气体作为用作分解原料气体的辅助剂的反应性气体。因此防止了氧或氢自由基的底物灰化。可以将CF4或NF3的氟族气体加入反应气体中。可以首先形成如上所述的钝化膜的SiO 2膜作为初始钝化膜，然后通过使用具有灰化效应的反应气体，例如O 2，N 2 O，O 3，可以在初始钝化膜的顶部形成另一钝化膜和H2。

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