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1. 发明授权

US08419854B2 Film-forming apparatus 有权
标题翻译：成膜装置
公开(公告)号：US08419854B2
公开(公告)日：2013-04-16
申请号：US12450265
申请日：2008-04-15
申请人： Masanobu Hatanaka , Osamu Irino , Michio Ishikawa
发明人： Masanobu Hatanaka , Osamu Irino , Michio Ishikawa
IPC分类号： C23C16/455 , C23C16/511 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/30 , C23C16/38 , C23C16/452 , C23C16/45574 , H01J37/3244
摘要： In a film-forming apparatus in which two or more gases are used, a uniform film is formed. In a film-forming apparatus provided with a film-forming chamber and a shower head, the shower head is provided with a material gas diffusion chamber and a reactive gas diffusion chamber. A gas passage which communicates the material gas diffusion chamber and a material gas introduction pipe is constituted into multi-stages of one stage or more. Each stage has a gas passage represented by 2n-1 (where n is the number of stages). The first-stage gas passage has connected to the center thereof the material gas introduction pipe. Each of second-stage and subsequent-stage gas passages has connected to the center thereof connection holes which are provided on both ends of the previous-stage gas passages so as to be in communication with the previous-stage gas passages. Each of the final-stage gas passages is connected to the material gas diffusion chamber by connection holes formed on both ends of each of the gas passages.
摘要翻译：在使用两种或更多种气体的成膜装置中，形成均匀的膜。在设置有成膜室和喷淋头的成膜装置中，喷头设置有原料气体扩散室和反应性气体扩散室。将原料气体扩散室和原料气体导入管连通的气体通路构成为一级以上的多级。每级具有由2n-1表示的气体通道（其中n是级数）。第一级气体通路与其中心连接有原料气体导入管。第二级和后级气体通道中的每一个连接到设置在前级气体通道两端的中心连接孔，以便与前一级气体通道连通。每个末级气体通过形成在每个气体通道两端的连接孔连接到原料气体扩散室。

2. 发明授权

US08183153B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08183153B2
公开(公告)日：2012-05-22
申请号：US12676322
申请日：2008-09-03
申请人： Hideaki Zama , Michio Ishikawa , Takumi Kadota , Chihiro Hasegawa
发明人： Hideaki Zama , Michio Ishikawa , Takumi Kadota , Chihiro Hasegawa
IPC分类号： H01L21/4763
CPC分类号： C23C16/18 , C23C16/045 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L29/7833
摘要： Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S12). Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S14).
摘要翻译：公开了一种制造半导体器件的方法，该半导体器件具有降低含有含钌膜和含铜膜的铜布线的电阻，从而提高了可靠性。还公开了一种用于制造半导体器件的装置。具体地说，通过使用含有由通式表示的有机钌络合物和还原气体的原料的CVD法，在具有凹部的基板上形成Ru膜（步骤S12）。然后，通过CVD法使用含有通式表示的有机铜络合物的原料和还原气体在Ru膜上形成Cu膜，从而在凹陷部中形成含有Ru膜和Cu膜的铜布线部分（步骤S14）。

3. 发明授权

US08084368B2 Method of forming barrier film 有权
标题翻译：形成阻挡膜的方法
公开(公告)号：US08084368B2
公开(公告)日：2011-12-27
申请号：US12447533
申请日：2007-11-08
申请人： Masanobu Hatanaka , Michio Ishikawa , Kanako Tsumagari
发明人： Masanobu Hatanaka , Michio Ishikawa , Kanako Tsumagari
IPC分类号： H01L21/46
CPC分类号： C23C16/38 , C23C16/30 , C23C16/4554 , C23C16/45555 , C23C16/45565 , H01L21/28562 , H01L21/76843
摘要： A barrier film made of a ZrB2 film is formed by use of a coating apparatus provided with plasma generation means including a coaxial resonant cavity and a microwave supply circuit for exciting the coaxial resonant cavity, the coaxial resonant cavity including spaced apart conductors provided around the periphery of a nonmetallic pipe for reactive gas introduction, the coaxial resonant cavity having an inner height equal to an integer multiple of one-half of the exciting wavelength, the plasma generation means being constructed such that a gas injected from one end of the nonmetallic pipe is excited into a plasma state by a microwave when the gas is in a region of the nonmetallic pipe which is not covered with the conductors and such that the gas in the plasma state is discharged from the other end of the nonmetallic pipe.
摘要翻译：由ZrB2膜制成的阻挡膜通过使用具有等离子体产生装置的涂覆装置形成，所述等离子体产生装置包括同轴谐振腔和用于激发同轴谐振腔的微波供应电路，所述同轴谐振腔包括设置在周边周围的间隔开的导体的用于反应气体引入的非金属管，所述同轴谐振腔的内部高度等于所述激发波长的二分之一的整数倍，所述等离子体产生装置被构造成使得从所述非金属管的一端注入的气体为当气体处于不被导体覆盖的非金属管的区域中并且等离子体状态的气体从非金属管的另一端排放时，通过微波激发成等离子体状态。

4. 发明授权

US08043963B2 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus 有权
标题翻译：半导体器件制造方法和半导体器件制造装置
公开(公告)号：US08043963B2
公开(公告)日：2011-10-25
申请号：US12528811
申请日：2008-02-25
申请人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
发明人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
IPC分类号： H01L21/4763
CPC分类号： H01L21/28556 , C23C16/30 , C23C16/45542 , H01L21/28562 , H01L21/76829 , H01L21/76831 , H01L21/76843 , H01L21/76849 , Y10T29/49146 , Y10T29/49162
摘要： A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer (11) on a semiconductor substrate (2) including an element region (2b), a recess step of forming a recess (12) in the insulation layer (11), a metal layer step of embedding a metal layer (13) in the recess (12), a planarization step of planarizing a surface of the insulation layer (11) and a surface of the metal layer (13) to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer (16) containing at least zirconium element and nitrogen element on the surface of the insulation layer (11) and the surface of the metal layer (13) after the planarization step.
摘要翻译：一种用于制造提高金属盖层的可靠性和生产率的半导体器件的方法。该方法包括在包括元件区域（2b）的半导体衬底（2）上叠加绝缘层（11）的绝缘层步骤，在绝缘层（11）中形成凹陷（12）的凹陷步骤，金属在所述凹部（12）中嵌入金属层（13）的层叠工序，使所述绝缘层（11）的表面和所述金属层（13）的表面平坦化的平坦化工序，在平坦化步骤之后，在所述绝缘层（11）的表面和所述金属层（13）的表面上形成至少含有锆元素和氮元素的金属覆盖层（16）的金属覆盖层工序。

5. 发明申请

US20100270654A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, DRY-ETCHING PROCESS, METHOD FOR MAKING ELECTRICAL CONNECTIONS, AND ETCHING APPARATUS 失效
标题翻译：半导体器件及其制造方法，干蚀工艺，制造电气连接的方法和蚀刻装置
公开(公告)号：US20100270654A1
公开(公告)日：2010-10-28
申请号：US12830995
申请日：2010-07-06
申请人： Toshio HAYASHI , Yasuhiro MORIKAWA , Michio ISHIKAWA , Yuji FURUMURA , Naomi MURA
发明人： Toshio HAYASHI , Yasuhiro MORIKAWA , Michio ISHIKAWA , Yuji FURUMURA , Naomi MURA
IPC分类号： H01L23/48 , H01L29/66 , H01L21/306
CPC分类号： H01L21/31116 , H01L21/3081 , H01L21/31144 , H01L21/32139
摘要： A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching.
摘要翻译：一种用于制造半导体器件的方法包括使用具有图案的抗蚀剂掩模对薄膜进行干法蚀刻，其中每个图案的宽度和相邻两个图案之间的空间中的至少一个范围为32至130nm，使用含卤素的具有卤素的复合气体是选自F，I和Br中的至少两种。 I和Br中的至少一个的比例不超过卤素原子总量的26％，如以将原料组成比转移到薄膜上的原子组成比来表示的。这种薄膜的蚀刻避免了对所使用的抗蚀剂掩模的损害。所得到的带有转印图案的薄膜用作对下面的材料进行干蚀刻的掩模。

6. 发明申请

US20100068880A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 有权
标题翻译：半导体器件制造方法和半导体器件制造设备
公开(公告)号：US20100068880A1
公开(公告)日：2010-03-18
申请号：US12528811
申请日：2008-02-25
申请人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
发明人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
IPC分类号： H01L21/768 , H05K3/10
CPC分类号： H01L21/28556 , C23C16/30 , C23C16/45542 , H01L21/28562 , H01L21/76829 , H01L21/76831 , H01L21/76843 , H01L21/76849 , Y10T29/49146 , Y10T29/49162
摘要： A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer (11) on a semiconductor substrate (2) including an element region (2b), a recess step of forming a recess (12) in the insulation layer (11), a metal layer step of embedding a metal layer (13) in the recess (12), a planarization step of planarizing a surface of the insulation layer (11) and a surface of the metal layer (13) to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer (16) containing at least zirconium element and nitrogen element on the surface of the insulation layer (11) and the surface of the metal layer (13) after the planarization step.
摘要翻译：一种用于制造提高金属盖层的可靠性和生产率的半导体器件的方法。该方法包括在包括元件区域（2b）的半导体衬底（2）上叠加绝缘层（11）的绝缘层步骤，在绝缘层（11）中形成凹陷（12）的凹陷步骤，金属在所述凹部（12）中嵌入金属层（13）的层叠工序，使所述绝缘层（11）的表面和所述金属层（13）的表面平坦化的平坦化工序，在平坦化步骤之后，在所述绝缘层（11）的表面和所述金属层（13）的表面上形成至少含有锆元素和氮元素的金属覆盖层（16）的金属覆盖层工序。

7. 发明申请

US20090238968A1 Method for Producing Component for Vacuum Apparatus, Resin Coating Forming Apparatus and Vacuum Film Forming System 有权
标题翻译：真空设备组件生产方法，树脂涂层成型设备和真空成膜系统
公开(公告)号：US20090238968A1
公开(公告)日：2009-09-24
申请号：US11886600
申请日：2006-03-23
申请人： Masanobu Hatanaka , Yoshikazu Takahashi , Michio Ishikawa , Fumio Nakamura
发明人： Masanobu Hatanaka , Yoshikazu Takahashi , Michio Ishikawa , Fumio Nakamura
IPC分类号： B05D7/22 , C23C16/44 , C23C14/12
CPC分类号： C23C16/4402 , B05D1/60 , B05D7/22
摘要： The object of this invention is to provide a method for producing a component for vacuum apparatus and a resin coating forming apparatus capable of easily forming a resin coating on an internal flow path complex in shape.The resin coating forming apparatus (21) comprises a monomer vapor supplying unit (23), a vacuum pumping line (24) for transporting monomer vapor, a connection portion (24c) connectable with the internal flow path of a component (22A) provided on part of the vacuum pumping line (24), and a temperature adjusting unit (31) for depositing the monomer vapor onto the internal flow path of the component (22A) connected with the connection portion (24c) to form a resin coating. The above arrangement permits the formation of a uniform, high-coverage resin coating on the internal flow path of the component (22A) by merely exposing the internal flow path to monomer vapor.
摘要翻译：本发明的目的是提供一种用于制造真空装置的部件的方法和能够容易地在内部流路复合体上形成树脂涂层的树脂涂层形成装置。树脂涂层形成装置（21）包括单体蒸气供给单元（23），用于输送单体蒸气的真空泵送管线（24），可连接到设置在其上的部件（22A）的内部流路的连接部分（24c）真空泵送管线（24）的一部分和用于将单体蒸气沉积到与连接部分（24c）连接的部件（22A）的内部流动路径上以形成树脂涂层的温度调节单元（31）。上述布置允许通过仅将内部流动路径暴露于单体蒸气，在组件（22A）的内部流动路径上形成均匀的高覆盖率树脂涂层。

8. 发明申请

US20090102025A1 Semiconductor device and method for manufacturing the same, dry-etching process, method for making electrical connections, and etching apparatus 审中-公开
标题翻译：半导体装置及其制造方法，干法蚀刻工艺，电连接方法和蚀刻装置
公开(公告)号：US20090102025A1
公开(公告)日：2009-04-23
申请号：US11664091
申请日：2006-04-07
申请人： Toshio Hayashi , Yasuhiro Morikawa , Michio Ishikawa , Yuji Furumura , Naomi Mura
发明人： Toshio Hayashi , Yasuhiro Morikawa , Michio Ishikawa , Yuji Furumura , Naomi Mura
IPC分类号： H01L21/461 , H01L29/10
CPC分类号： H01L29/7833 , H01L21/28061 , H01L21/31116 , H01L21/76802 , H01L29/6659
摘要： A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching.
摘要翻译：一种用于制造半导体器件的方法包括使用具有图案的抗蚀剂掩模对薄膜进行干法蚀刻，其中每个图案的宽度和相邻两个图案之间的空间中的至少一个范围为32至130nm，使用含卤素的具有卤素的复合气体是选自F，I和Br中的至少两种。 I和Br中的至少一个的比例不超过卤素原子总量的26％，如以将原料组成比转移到薄膜上的原子组成比来表示的。这种薄膜的蚀刻避免了对所使用的抗蚀剂掩模的损害。所得到的带有转印图案的薄膜用作对下面的材料进行干蚀刻的掩模。

9. 发明申请

US20050268852A1 Vaccum film-forming apparatus 有权
标题翻译：真空成膜装置
公开(公告)号：US20050268852A1
公开(公告)日：2005-12-08
申请号：US11133437
申请日：2005-05-20
申请人： Masanobu Hatanaka , Michio Ishikawa , Se-Ju Lim , Fumio Nakamura
发明人： Masanobu Hatanaka , Michio Ishikawa , Se-Ju Lim , Fumio Nakamura
IPC分类号： C23C14/00 , C23C16/00 , C23C16/02 , C23C16/34 , C23C16/38 , C23C16/44 , C23C16/455 , C23C16/54
CPC分类号： C23C16/38 , C23C16/0236 , C23C16/34 , C23C16/44 , C23C16/4405 , C23C16/45525 , C23C16/45536 , C23C16/45551 , C23C16/54 , Y10S414/139
摘要： A vacuum film-forming apparatus comprising substrate stages; vacuum chamber-forming containers opposed to the stages; a means for moving the substrate between the stages; and gas-introduction means connected to every containers, wherein one of the stage and the container is ascended or descended towards the other to bring the upper face of the stage and the opening of the container into contact with one another so that vacuum chambers can be formed and that a raw gas and/or a reactant gas can be introduced into each space of the chamber through each gas-introduction means to carry out either the adsorption or reaction step for allowing the raw gas to react with the reactant gas. The apparatus permits the independent establishment of process conditions for the adsorption and reaction processes and the better acceleration of the reaction between raw and reactant gases to give a film having excellent quality and the apparatus can be manufactured at a low cost.
摘要翻译：一种包括基底台的真空成膜装置; 与阶段相对的真空室形成容器; 用于在所述级之间移动所述衬底的装置; 以及连接到每个容器的气体导入装置，其中所述平台和容器中的一个朝向另一个上升或下降以使所述台的上表面和所述容器的开口彼此接触，使得真空室可以并且可以通过每个气体引入装置将原料气体和/或反应气体引入室的每个空间中，以进行用于使原料气体与反应气体反应的吸附或反应步骤。该装置允许独立地建立用于吸附和反应过程的工艺条件，并且更好地加速原料气体和反应气体之间的反应，得到具有优良品质的膜，并且可以以低成本制造装置。

10. 发明授权

US5250339A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US5250339A
公开(公告)日：1993-10-05
申请号：US940753
申请日：1992-09-08
申请人： Noriaki Tani , Kyuzo Nakamura , Michio Ishikawa , Masanori Hashimoto , Yoshifumi Ota
发明人： Noriaki Tani , Kyuzo Nakamura , Michio Ishikawa , Masanori Hashimoto , Yoshifumi Ota
IPC分类号： G11B5/66 , G11B5/72 , G11B5/73 , B32B3/02
CPC分类号： G11B5/7325 , G11B5/66 , G11B5/72 , Y10S428/90 , Y10T428/12826 , Y10T428/265
摘要： A magnetic recording medium suitable for high-density recording which comprises a non-magnetic substrate disk, at least one magnetic layer and at least one protective layer, the magnetic layer and the protective layer being formed in succession on the non-magnetic substrate disk, wherein the non-magnetic substrate disk comprises a glass substrate and at least one non-magnetic metallic film provided on the glass substrate, and the non-magnetic metallic film is provided on a surface thereof with a multitude of fine concentric grooves.
摘要翻译：一种适用于高密度记录的磁记录介质，包括非磁性基板盘，至少一个磁性层和至少一个保护层，所述磁性层和保护层依次形成在非磁性基板盘上，其中所述非磁性基板盘包括玻璃基板和设置在所述玻璃基板上的至少一个非磁性金属膜，并且所述非磁性金属膜在其表面上设置有多个细小的同心凹槽。

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