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    • 1. 发明授权
    • Film-forming apparatus
    • 成膜装置
    • US08419854B2
    • 2013-04-16
    • US12450265
    • 2008-04-15
    • Masanobu HatanakaOsamu IrinoMichio Ishikawa
    • Masanobu HatanakaOsamu IrinoMichio Ishikawa
    • C23C16/455C23C16/511C23F1/00H01L21/306C23C16/06C23C16/22
    • C23C16/45565C23C16/30C23C16/38C23C16/452C23C16/45574H01J37/3244
    • In a film-forming apparatus in which two or more gases are used, a uniform film is formed. In a film-forming apparatus provided with a film-forming chamber and a shower head, the shower head is provided with a material gas diffusion chamber and a reactive gas diffusion chamber. A gas passage which communicates the material gas diffusion chamber and a material gas introduction pipe is constituted into multi-stages of one stage or more. Each stage has a gas passage represented by 2n-1 (where n is the number of stages). The first-stage gas passage has connected to the center thereof the material gas introduction pipe. Each of second-stage and subsequent-stage gas passages has connected to the center thereof connection holes which are provided on both ends of the previous-stage gas passages so as to be in communication with the previous-stage gas passages. Each of the final-stage gas passages is connected to the material gas diffusion chamber by connection holes formed on both ends of each of the gas passages.
    • 在使用两种或更多种气体的成膜装置中,形成均匀的膜。 在设置有成膜室和喷淋头的成膜装置中,喷头设置有原料气体扩散室和反应性气体扩散室。 将原料气体扩散室和原料气体导入管连通的气体通路构成为一级以上的多级。 每级具有由2n-1表示的气体通道(其中n是级数)。 第一级气体通路与其中心连接有原料气体导入管。 第二级和后级气体通道中的每一个连接到设置在前级气体通道两端的中心连接孔,以便与前一级气体通道连通。 每个末级气体通过形成在每个气体通道两端的连接孔连接到原料气体扩散室。
    • 3. 发明授权
    • Method of forming barrier film
    • 形成阻挡膜的方法
    • US08084368B2
    • 2011-12-27
    • US12447533
    • 2007-11-08
    • Masanobu HatanakaMichio IshikawaKanako Tsumagari
    • Masanobu HatanakaMichio IshikawaKanako Tsumagari
    • H01L21/46
    • C23C16/38C23C16/30C23C16/4554C23C16/45555C23C16/45565H01L21/28562H01L21/76843
    • A barrier film made of a ZrB2 film is formed by use of a coating apparatus provided with plasma generation means including a coaxial resonant cavity and a microwave supply circuit for exciting the coaxial resonant cavity, the coaxial resonant cavity including spaced apart conductors provided around the periphery of a nonmetallic pipe for reactive gas introduction, the coaxial resonant cavity having an inner height equal to an integer multiple of one-half of the exciting wavelength, the plasma generation means being constructed such that a gas injected from one end of the nonmetallic pipe is excited into a plasma state by a microwave when the gas is in a region of the nonmetallic pipe which is not covered with the conductors and such that the gas in the plasma state is discharged from the other end of the nonmetallic pipe.
    • 由ZrB2膜制成的阻挡膜通过使用具有等离子体产生装置的涂覆装置形成,所述等离子体产生装置包括同轴谐振腔和用于激发同轴谐振腔的微波供应电路,所述同轴谐振腔包括设置在周边周围的间隔开的导体 的用于反应气体引入的非金属管,所述同轴谐振腔的内部高度等于所述激发波长的二分之一的整数倍,所述等离子体产生装置被构造成使得从所述非金属管的一端注入的气体为 当气体处于不被导体覆盖的非金属管的区域中并且等离子体状态的气体从非金属管的另一端排放时,通过微波激发成等离子体状态。