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1. 发明申请

US20050245078A1 Manufacturing method of display device and semiconductor device 有权
标题翻译：显示器件和半导体器件的制造方法
公开(公告)号：US20050245078A1
公开(公告)日：2005-11-03
申请号：US11114870
申请日：2005-04-26
申请人： Hideto Ohnuma , Kiyofumi Ogino , Teruyuki Fujii
发明人： Hideto Ohnuma , Kiyofumi Ogino , Teruyuki Fujii
IPC分类号： H01L21/44 , H01L21/77
CPC分类号： H01L27/1292
摘要： It is an object of the present invention to improve the surface planarity of a film by uniforming the thickness of an insulating layer. Further, it is another object of the invention to provide a technology for manufacturing an electronic device typified by a high-definition and high-quality display device with high yield at low cost with the use of the insulating layer. In a method for manufacturing a semiconductor device according to the invention, a semiconductor layer is formed; an insulating layer is formed over the semiconductor layer; a wiring layer connected to the semiconductor layer is formed in an opening provided in the insulating layer; and an electrode layer connected to the wiring layer is formed. The insulating layer is formed by spin coating with a composition containing an insulating material, which has a viscosity of from 10 mP·s to 50 mP·s.
摘要翻译：本发明的目的是通过使绝缘层的厚度均匀化来改善膜的表面平坦度。此外，本发明的另一个目的是提供一种使用绝缘层以低成本制造高清晰度和高质量显示装置的电子装置的制造技术。在根据本发明的半导体器件的制造方法中，形成半导体层; 在半导体层上形成绝缘层; 连接到半导体层的布线层形成在设置在绝缘层中的开口中; 形成与布线层连接的电极层。绝缘层通过使用粘合剂为10mP.s至50mP.s.的包含绝缘材料的组合物进行旋涂而形成。

2. 发明授权

US07259110B2 Manufacturing method of display device and semiconductor device 有权
标题翻译：显示器件和半导体器件的制造方法
公开(公告)号：US07259110B2
公开(公告)日：2007-08-21
申请号：US11114870
申请日：2005-04-26
申请人： Hideto Ohnuma , Kiyofumi Ogino , Teruyuki Fujii
发明人： Hideto Ohnuma , Kiyofumi Ogino , Teruyuki Fujii
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L27/1292
摘要： It is an object of the present invention to improve the surface planarity of a film by uniforming the thickness of an insulating layer. Further, it is another object of the invention to provide a technology for manufacturing an electronic device typified by a high-definition and high-quality display device with high yield at low cost with the use of the insulating layer. In a method for manufacturing a semiconductor device according to the invention, a semiconductor layer is formed; an insulating layer is formed over the semiconductor layer; a wiring layer connected to the semiconductor layer is formed in an opening provided in the insulating layer; and an electrode layer connected to the wiring layer is formed. The insulating layer is formed by spin coating with a composition containing an insulating material, which has a viscosity of from 10 mPa·s to 50 mPa·s.
摘要翻译：本发明的目的是通过使绝缘层的厚度均匀化来改善膜的表面平坦度。此外，本发明的另一个目的是提供一种使用绝缘层以低成本制造高清晰度和高质量显示装置的电子装置的制造技术。在根据本发明的半导体器件的制造方法中，形成半导体层; 在半导体层上形成绝缘层; 连接到半导体层的布线层形成在设置在绝缘层中的开口中; 形成与布线层连接的电极层。绝缘层通过旋涂法，其中含有绝缘材料的组合物形成，该组合物的粘度为10mPa.s至50mPa.s。

3. 发明授权

US07470621B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07470621B2
公开(公告)日：2008-12-30
申请号：US11480895
申请日：2006-07-06
申请人： Taichi Endo , Teruyuki Fujii , Kiyofumi Ogino
发明人： Taichi Endo , Teruyuki Fujii , Kiyofumi Ogino
IPC分类号： H01L21/302
CPC分类号： G03F7/2024 , G03F7/0007 , H01L27/3244 , H01L51/5284 , H01L2251/5315
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device that can suppress generation of a crack and peeling in a resin BM and deterioration of coverage of an upper layer of the resin BM, even if a black resin is used as a material of the resin BM in order to improve a contrast of brightness and a contrast of color. As a method for manufacturing a semiconductor device, a non-photosensitive black resin layer is formed over a substrate, a positive resist film is formed over the non-photosensitive black resin layer, the positive resist film is exposed, a resin black matrix layer made of the non-photosensitive black resin layer is formed over the substrate by developing the positive resist film by using a first developing solution and by etching the non-photosensitive black resin layer, a non-exposed positive resist film over the resin black matrix layer, which remains after the development, is exposed, and the positive resist film is removed by using a second developing solution.
摘要翻译：本发明的目的是提供一种半导体器件的制造方法，即使使用黑色树脂，也能够抑制树脂BM的裂纹产生和树脂BM的剥离以及树脂BM的上层的覆盖的劣化作为树脂BM的材料，以提高亮度的对比度和颜色的对比度。作为半导体器件的制造方法，在基板上形成非感光性黑色树脂层，在非感光性黑色树脂层上形成正性抗蚀剂膜，曝光正性抗蚀剂膜，使树脂黑色矩阵层通过使用第一显影液显影正性抗蚀剂膜并通过在树脂黑色矩阵层上蚀刻非感光性黑色树脂层，未曝光的正性抗蚀剂膜，在基材上形成非感光性黑色树脂层，在显影后保留，曝光，通过使用第二显影液除去正性抗蚀剂膜。

4. 发明申请

US20070010036A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070010036A1
公开(公告)日：2007-01-11
申请号：US11480895
申请日：2006-07-06
申请人： Taichi Endo , Teruyuki Fujii , Kiyofumi Ogino
发明人： Taichi Endo , Teruyuki Fujii , Kiyofumi Ogino
IPC分类号： H01L21/00
CPC分类号： G03F7/2024 , G03F7/0007 , H01L27/3244 , H01L51/5284 , H01L2251/5315
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device that can suppress generation of a crack and peeling in a resin BM and deterioration of coverage of an upper layer of the resin BM, even if a black resin is used as a material of the resin BM in order to improve a contrast of brightness and a contrast of color. As a method for manufacturing a semiconductor device, a non-photosensitive black resin layer is formed over a substrate, a positive resist film is formed over the non-photosensitive black resin layer, the positive resist film is exposed, a resin black matrix layer made of the non-photosensitive black resin layer is formed over the substrate by developing the positive resist film by using a first developing solution and by etching the non-photosensitive black resin layer, a non-exposed positive resist film over the resin black matrix layer, which remains after the development, is exposed, and the positive resist film is removed by using a second developing solution.
摘要翻译：本发明的目的是提供一种半导体器件的制造方法，即使使用黑色树脂，也能够抑制树脂BM的裂纹产生和树脂BM的剥离以及树脂BM的上层的覆盖的劣化作为树脂BM的材料，以提高亮度的对比度和颜色的对比度。作为半导体器件的制造方法，在基板上形成非感光性黑色树脂层，在非感光性黑色树脂层上形成正性抗蚀剂膜，曝光正性抗蚀剂膜，使树脂黑色矩阵层通过使用第一显影液显影正性抗蚀剂膜并通过在树脂黑色矩阵层上蚀刻非感光性黑色树脂层，未曝光的正性抗蚀剂膜，在基材上形成非感光性黑色树脂层，在显影后保留，曝光，通过使用第二显影液除去正性抗蚀剂膜。

5. 发明授权

US09947970B2 Method for manufacturing and operating power storage device 有权
公开(公告)号：US09947970B2
公开(公告)日：2018-04-17
申请号：US13427134
申请日：2012-03-22
申请人： Kiyofumi Ogino
发明人： Kiyofumi Ogino
IPC分类号： H02J7/00 , H01M10/44 , H01M10/052 , H01M10/0562 , H01M10/0585
CPC分类号： H01M10/443 , H01M10/052 , H01M10/0562 , H01M10/0585 , H01M2300/0065 , H01M2300/0091 , H02J7/0075 , Y02T10/7011 , Y10T29/49108
摘要： A power storage device including a solid electrolyte and operating at room temperature and a power storage device including a solid electrolyte and having higher discharge capacity are manufactured. The power storage devices are each manufactured in the following manner: an electrolyte including an ion-conducting high polymer, an inorganic oxide, and a lithium electrolyte salt is provided between a positive electrode and a negative electrode; charge at a first current value is performed and then a charge at a first voltage value obtained by the charge at the first current value is performed, between the positive electrode and the negative electrode at room temperature; and discharge at a second current value is performed after the charge at the first voltage value is performed.

6. 发明授权

US08748039B2 Energy storage device and manufacturing method thereof 有权
标题翻译：储能装置及其制造方法
公开(公告)号：US08748039B2
公开(公告)日：2014-06-10
申请号：US13050980
申请日：2011-03-18
申请人： Kiyofumi Ogino , Kazutaka Kuriki
发明人： Kiyofumi Ogino , Kazutaka Kuriki
IPC分类号： H01M4/66
CPC分类号： H01M10/0525 , H01G11/12 , H01G11/28 , H01G11/50 , H01G11/68 , H01G11/70 , H01G11/72 , H01G11/74 , H01G11/84 , H01M4/0404 , H01M4/134 , H01M4/1395 , H01M4/667 , H01M4/70 , H01M10/0413 , H01M10/0459 , H01M10/0583 , H01M2004/025 , Y02E60/13 , Y10T29/417 , Y10T29/49108 , Y10T29/49115
摘要： An electrode of an energy storage device with less deterioration by charge and discharge can be manufactured. In addition, an energy storage device which has large capacity and high endurance can be manufactured. A manufacturing method of an electrode of an energy storage device is provided in which a high-wettability regions and a low-wettability region are formed at a surface of a current collector, a composition containing silicon, germanium, or tin is discharged to the high-wettability regions and then baked to form separate active materials over a surface of the current collector. Thus, an electrode of an energy storage device with less deterioration due to charge and discharge can be manufactured.
摘要翻译：可以制造具有较少的充放电劣化的储能装置的电极。另外，能够制造容量大，耐久性高的储能装置。提供一种储能装置的电极的制造方法，其中在集电体的表面形成有高润湿性区域和低润湿性区域，含有硅，锗或锡的组合物排出到高 - 润湿性区域，然后烘烤以在集电器的表面上形成分离的活性材料。因此，可以制造由于充放电而具有较小劣化的储能装置的电极。

7. 发明申请

US20120141866A1 POWER STORAGE DEVICE 有权
标题翻译：电源存储设备
公开(公告)号：US20120141866A1
公开(公告)日：2012-06-07
申请号：US13307045
申请日：2011-11-30
申请人： Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
发明人： Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
IPC分类号： H01M4/66 , H01M10/02 , H01G9/032
CPC分类号： H01M4/366 , H01G11/06 , H01G11/50 , H01G11/68 , H01G11/72 , H01M4/382 , H01M4/386 , H01M4/661 , H01M10/0525 , H01M10/0562 , H01M2004/027 , Y02E60/122 , Y02E60/13 , Y02T10/7022
摘要： A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.
摘要翻译：提供了一种具有改善的性能的蓄电装置，例如较高的放电容量，并且由于活性材料层的剥离等而导致的劣化不大可能。在蓄电装置的电极中，作为可与锂合金化的材料，在集电体上使用磷掺杂非晶硅作为活性物质层，在活性物质层上沉积氧化铌作为含有铌的层。因此，能够提高蓄电装置的容量，能够提高循环特性和充放电效率。

8. 发明授权

US08105945B2 Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same 有权
标题翻译：制造布线，薄膜晶体管，发光装置和液晶显示装置的方法以及用于形成它的液滴喷射装置
公开(公告)号：US08105945B2
公开(公告)日：2012-01-31
申请号：US13034771
申请日：2011-02-25
申请人： Osamu Nakamura , Kiyofumi Ogino
发明人： Osamu Nakamura , Kiyofumi Ogino
IPC分类号： H01L21/44
CPC分类号： H01L51/0022 , G09G2300/0814 , H01L21/288 , H01L21/76838 , H01L27/3244 , H01L27/3276 , H01L51/56 , H01L2251/5315 , H01L2251/5323
摘要： As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a dot spreads on a wiring formation surface, and it is difficult to narrow width of a wiring. In the present invention, a photocatalytic substance typified by TiO2 is formed on a wiring formation surface, and a wiring is formed by utilizing photocatalytic activity of the photocatalytic substance. According to the present invention, a narrower wiring, that is, a smaller wiring in width than a diameter of a dot formed by an ink-jet method can be formed.
摘要翻译：作为半导体装置，具体地说，将包括在半导体器件中的像素部分制成具有更高的精度和更高的开口率，需要在宽度上形成较小的布线。在通过喷墨法形成布线的情况下，点布线在布线形成面上，难以缩小布线的宽度。在本发明中，在布线形成面上形成以TiO 2为代表的光催化剂物质，利用光催化剂的光催化活性形成布线。根据本发明，可以形成较窄的布线，即宽度小于通过喷墨法形成的点的直径的布线。

9. 发明申请

US20110075322A1 ELECTROCHEMICAL CAPACITOR 有权
标题翻译：电化学电容器
公开(公告)号：US20110075322A1
公开(公告)日：2011-03-31
申请号：US12891321
申请日：2010-09-27
申请人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito
发明人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito
IPC分类号： H01G9/155
CPC分类号： H01G11/76 , H01G11/02 , H01G11/10 , H01G11/56 , H01G11/62 , H01G11/72 , Y02E60/13
摘要： An electrochemical capacitor capable of increasing a capacity is proposed. The electrochemical capacitor is a positive electrode and a negative electrode formed over a surface plane of a substrate. Additionally, the electrochemical capacitor has an electrolyte, and the positive electrode and the negative electrode are in contact with a same surface plane of the electrolyte. In other words, the electrochemical capacitor has a positive electrode active material and a negative electrode active material over a surface plane of an electrolyte, a positive electrode current collector which is in contact with the positive electrode active material, and a negative electrode current collector which is in contact with the negative electrode active material. By the aforesaid structure, a capacity of the electrochemical capacitor can be increased.
摘要翻译：提出了能增加容量的电化学电容器。电化学电容器是在基板的表面平面上形成的正极和负极。此外，电化学电容器具有电解质，正极和负极与电解质的相同的表面接触。换句话说，电化学电容器在电解质的表面上具有正极活性物质和负极活性物质，与正极活性物质接触的正极集电体和负极集电体与负极活性物质接触。通过上述结构，能够提高电化学电容器的容量。

10. 发明授权

US07547562B2 Light emitting device and method for manufacturing same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07547562B2
公开(公告)日：2009-06-16
申请号：US10229132
申请日：2002-08-28
申请人： Kiyofumi Ogino
发明人： Kiyofumi Ogino
IPC分类号： H01L21/00
CPC分类号： H01L51/56 , H01L27/3211 , H01L27/3244 , H01L27/3281 , H01L51/0003 , H01L51/0004 , H01L2251/5315 , H01L2251/558
摘要： The object is to provide a method for realizing to selectively form a film in the manufacture of a light-emitting device using a polymer organic compound. The invention is characterized in that the application liquid having an organic compound dissolved in a solvent is applied onto a substrate having a mask thereby forming an organic compound layer of a plurality of materials. Furthermore, a sucker is provided to place the mask in sufficient contact with the substrate without causing positional deviation during film forming, thereby making possible to form an organic compound layer with accuracy.
摘要翻译：本发明的目的是提供一种在使用聚合物有机化合物的发光装置的制造中实现选择性地形成膜的方法。本发明的特征在于将具有溶解在溶剂中的有机化合物的涂布液施加到具有掩模的基材上，从而形成多种材料的有机化合物层。此外，提供吸盘以使掩模与基板充分接触而不会在成膜期间产生位置偏差，从而可以精确地形成有机化合物层。

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