专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06514352B2 Cleaning method using an oxidizing agent, chelating agent and fluorine compound 有权
标题翻译：使用氧化剂，螯合剂和氟化合物的清洗方法
公开(公告)号：US06514352B2
公开(公告)日：2003-02-04
申请号：US09971578
申请日：2001-10-09
申请人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
发明人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
IPC分类号： C23G102
CPC分类号： C11D7/36 , B08B3/102 , C03C23/0075 , C11D3/32 , C11D3/364 , C11D3/3947 , C11D3/43 , C11D7/30 , C11D7/3263 , C11D7/5013 , C11D11/0047 , H01L21/31116 , Y10S134/902
摘要： The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and fluorine compound to flow on a surface of a material to be treated at a high speed to thereby clean the above surface according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.
摘要翻译：上述清洗方法的特征在于，允许包含氧化剂，螯合剂和氟化合物的清洗剂在高速下在待处理材料的表面上流动，从而清洁根据本发明的上述表面，能够容易地除去附着在被处理材料的表面的沉积物，而不损害被处理材料。

2. 发明授权

US06875288B2 Cleaning agent and cleaning method 失效
标题翻译：清洁剂和清洁方法
公开(公告)号：US06875288B2
公开(公告)日：2005-04-05
申请号：US09971589
申请日：2001-10-09
申请人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
发明人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
IPC分类号： B08B3/08 , B08B3/00 , C11D1/00 , C11D3/32 , C11D3/34 , C11D3/43 , C11D11/00 , C11D17/08 , H01L21/02 , H01L21/304 , H01L21/311 , H01L21/461
CPC分类号： B08B3/08 , B08B3/048 , C11D3/43 , C11D11/0064 , H01L21/02063 , H01L21/31133
摘要： The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.
摘要翻译：上述清洗剂包括表面活性剂和有机溶剂，上述清洗方法的特征在于允许上述清洗剂以高速流动在待处理材料的表面上，从而清洁上述表面。根据本发明，能够容易地除去附着在待处理材料的表面上的沉积物，而不损害被处理材料。

3. 发明授权

US06265309B1 Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same 有权
标题翻译：用于制造半导体器件的清洁剂和使用该半导体器件的半导体器件的制造方法
公开(公告)号：US06265309B1
公开(公告)日：2001-07-24
申请号：US09309076
申请日：1999-05-10
申请人： Hideto Gotoh , Tsuyoshi Matsui , Takayuki Niuya , Tetsuo Aoyama , Taketo Maruyama , Tetsuya Karita , Kojiro Abe , Fukusaburou Ishihara , Ryuji Sotoaka
发明人： Hideto Gotoh , Tsuyoshi Matsui , Takayuki Niuya , Tetsuo Aoyama , Taketo Maruyama , Tetsuya Karita , Kojiro Abe , Fukusaburou Ishihara , Ryuji Sotoaka
IPC分类号： H01L2102
CPC分类号： H01L21/02071 , C11D3/044 , C11D3/2006 , C11D3/2082 , C11D3/33 , C11D11/0047 , H01L21/02063 , H01L21/31138 , Y10S438/906
摘要： A cleaning agent for use in producing semiconductor devices. The cleaning agent is an aqueous solution containing (A) a fluorine-containing compound, (B) a salt of boric acid, (C) a water-soluble organic solvent, and optionally, (D) a specific quaternary ammonium salt or (D′) a specific ammonium salt of an organic carboxylic acid or a specific amine salt of an organic carboxylic acid. The polymeric deposit inside and around the via holes and on the side wall of the conductive line pattern formed during the dry etching process can be effectively removed by using the cleaning agent without affecting the dimensions of the via holes and the conductive line pattern.
摘要翻译：一种用于制造半导体器件的清洁剂。清洗剂是含有（A）含氟化合物，（B）硼酸盐，（C）水溶性有机溶剂和（D）特定季铵盐或（D） '）有机羧酸的特定铵盐或有机羧酸的特定胺盐。通过使用清洁剂可以有效地除去在干法蚀刻工艺期间形成的导电孔图案和导电线图案的侧壁上和周围的聚合物沉积物，而不影响通孔和导电线图案的尺寸。

4. 发明授权

US5972862A Cleaning liquid for semiconductor devices 失效
标题翻译：半导体器件清洗液
公开(公告)号：US5972862A
公开(公告)日：1999-10-26
申请号：US901475
申请日：1997-07-28
申请人： Yoshimi Torii , Shunji Sasabe , Masayuki Kojima , Kazuhisa Usuami , Takafumi Tokunaga , Kazusato Hara , Yoshikazu Ohira , Tsuyoshi Matsui , Hideto Gotoh , Tetsuo Aoyama , Ryuji Hasemi , Hidetoshi Ikeda , Fukusaburo Ishihara , Ryuji Sotoaka
发明人： Yoshimi Torii , Shunji Sasabe , Masayuki Kojima , Kazuhisa Usuami , Takafumi Tokunaga , Kazusato Hara , Yoshikazu Ohira , Tsuyoshi Matsui , Hideto Gotoh , Tetsuo Aoyama , Ryuji Hasemi , Hidetoshi Ikeda , Fukusaburo Ishihara , Ryuji Sotoaka
IPC分类号： C11D7/60 , G03F7/42 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/3213 , C11D1/62 , C11D3/44 , C11D7/08
CPC分类号： H01L21/02071 , G03F7/423 , G03F7/425 , H01L21/02063 , Y10S438/974
摘要： There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.
摘要翻译：公开了一种用于制造半导体器件的清洗液，其包含（A）含氟化合物; （B）水溶性或水混溶性有机溶剂; 和（C）无机酸和/或有机酸，任选地还包含（D）季铵盐或（D'）特定的有机羧酸铵盐和/或有机羧酸胺盐; 以及通过在表面上配置有绝缘膜层或金属导电层的基板上形成抗蚀剂图案来制造半导体器件的方法，通过干蚀刻形成通孔或电布线，通过灰化除去抗蚀剂图案用氧等离子体处理; 并用上述清洗液进行清洗处理。上述清洗液和制造方法可以容易地除去在干蚀刻的情况下形成的沉积聚合物，而不损害金属膜和绝缘膜。

5. 发明授权

US06478035B1 Cleaning device, cleaning system, treating device and cleaning method 失效
标题翻译：清洁装置，清洁系统，处理装置和清洁方法
公开(公告)号：US06478035B1
公开(公告)日：2002-11-12
申请号：US09634005
申请日：2000-08-07
申请人： Takayuki Niuya , Michihiro Ono , Hideto Gotoh , Hiroyuki Mori
发明人： Takayuki Niuya , Michihiro Ono , Hideto Gotoh , Hiroyuki Mori
IPC分类号： B08B304
CPC分类号： H01L21/67057 , B08B3/12 , H01L21/31133 , H01L21/76814 , Y10S134/902
摘要： There is provided a cleaning device capable of preventing a metal wiring layer or the like of an object to be treated, from being oxidized. The cleaning device comprises: a cleaning container 72 having a treating space S having a slightly larger volume than that of an object W to be treated; a fluid storage tank 30 for storing a cleaning fluid 32 for treating the object; supply lines 46A through 46D for supplying the cleaning fluid from the fluid storage tank to the cleaning container; and reflux lines 47A through 47D for returning the cleaning fluid from the cleaning container to the fluid storage tank, wherein the cleaning container, the fluid storage tank, the supply lines and the reflux lines are associated with each other for forming closed cleaning fluid circulating lines 51A through 51D. Thus, it is possible to prevent the metal wiring layer or the like of the object from being oxidized.
摘要翻译：提供了能够防止被处理物的金属布线层等被氧化的清洁装置。清洁装置包括：具有处理空间S的清洁容器72，处理空间S具有比要处理的物体W的体积稍大的体积; 用于存储用于处理物体的清洁流体32的流体储存罐30; 供应管线46A至46D，用于将清洁流体从流体储存罐供应到清洁容器; 以及回流管线47A至47D，用于将清洁流体从清洁容器返回到流体储存罐，其中清洁容器，流体储存罐，供应管线和回流管线彼此相关联，用于形成封闭的清洁流体循环管线 51A至51D。因此，可以防止物体的金属布线层等被氧化。

6. 发明授权

US06462005B1 Cleaning agent for a semiconductor device and a method of manufacturing a semiconductor device 失效
标题翻译：半导体装置用清洗剂及半导体装置的制造方法
公开(公告)号：US06462005B1
公开(公告)日：2002-10-08
申请号：US08369215
申请日：1995-01-05
申请人： Hideto Gotoh , Tetsuo Aoyama , Rieko Nakano , Hideki Fukuda
发明人： Hideto Gotoh , Tetsuo Aoyama , Rieko Nakano , Hideki Fukuda
IPC分类号： C11D162
CPC分类号： H01L21/02071 , G03F7/425 , H01L21/02052
摘要： A cleaning agent for use in the manufacture of a semiconductor device comprising an aqueous solution containing a quarternary ammonium salt and a fluoro compound, or an aqueous solution containing a quarternary ammonium salt and a fluoro compound, as well as an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. In the semiconductor device manufacturing process, after forming a mask with a photoresist, a wiring structure is formed by dry etching of a conductive layer, wherein a protecting deposition film has been formed on side walls of the conductive layer. Use of the cleaning agent enables the protecting deposition film to be removed in a highly reliable manner with the surface of the conductive layer being decontaminated and cleaned such that no corrosion of the conductive layer occurs.
摘要翻译：一种用于制造半导体器件的清洁剂，其包含含有季铵盐和氟化合物的水溶液，或含有季铵盐和氟化合物的水溶液，以及选自下组的有机溶剂由酰胺，内酯，腈，醇和酯组成。在半导体器件制造方法中，在用光致抗蚀剂形成掩模之后，通过干蚀刻导电层形成布线结构，其中在导电层的侧壁上形成保护沉积膜。使用清洁剂能够以高度可靠的方式去除保护性沉积膜，同时导电层的表面被净化和清洁，使得不会发生导电层的腐蚀。

7. 发明申请

US20050028929A1 Substrate processing apparatus and method thereof 审中-公开
标题翻译：基板加工装置及其方法
公开(公告)号：US20050028929A1
公开(公告)日：2005-02-10
申请号：US10909977
申请日：2004-08-03
申请人： Kenji Furusawa , Hideto Gotoh
发明人： Kenji Furusawa , Hideto Gotoh
IPC分类号： C03C23/00 , C23F1/00 , H01L21/00
CPC分类号： H01L21/67126 , C03C23/0005 , C03C23/0075 , H01L21/67057 , H01L21/67086 , H01L21/67115
摘要： A substrate processing apparatus 10 for processing a glass substrate 50 comprises a slider 20 on which the glass substrate 50 is placed, a process chamber 30 that can be mounted on the slider 20, and light irradiation units 110, 120. The process chamber 30 comprises a supply inlet 33 for supplying process fluid, a drain outlet 34 for draining out the process fluid, and a processing space 32, wherein one plane of the processing space that corresponds to the region to be processed is opened. When the process chamber 30 is mounted on the placing member 20, the processing space 32 forms a processing space which is sealed with the glass substrate 50.
摘要翻译：用于处理玻璃基板50的基板处理装置10包括其上放置有玻璃基板50的滑块20，可以安装在滑块20上的处理室30和光照射单元110,120。处理室30包括用于供给处理流体的供给入口33，用于排出处理流体的排出口34，以及处理空间32，处理空间与待处理区域对应的一个平面被打开。当处理室30安装在放置构件20上时，处理空间32形成用玻璃基板50密封的处理空间。

8. 发明授权

US5650041A Semiconductor device fabrication method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US5650041A
公开(公告)日：1997-07-22
申请号：US485541
申请日：1995-06-07
申请人： Hideto Gotoh , Masaru Utsugi
发明人： Hideto Gotoh , Masaru Utsugi
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/321 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31144 , H01L21/321 , H01L21/76802 , H01L21/76814 , Y10S438/906
摘要： An MLR (multilayer resist) 3 is formed on a BPSG layer 2 on top of a silicon wafer 1, then dry etched using an etching gas 8 to form a contact hole 2a on the BPSG layer 2. Next, the polymer residues 9a and 9b adhering to the side walls of the contact hole 2a and the surface of the BPSG layer 2 are subjected to a cleaning treatment using a cleaning treating liquid that contains 0.04-0.12 wt % hydrogen fluoride, thereby removing the polymer residues 9a and 9b.During etching the presence of the polymer residue layer 9 prevents etching in the horizontal direction, thereby allowing the formation of a highly precise contact hole 2a. In addition, because the treating liquid has the composition described above, the aforementioned polymer residues 9a and 9b are removed, thereby avoiding any degradation of the electrical characteristics. In addition, corrosion of the side walls of the contact hole due to the cleaning treating liquid is prevented, thereby maintaining the high level of contact hole precision. As a result good electrical characteristics are ensured even if the structure has an ultrafine-pitch pattern.
摘要翻译：在硅晶片1的顶部的BPSG层2上形成MLR（多层抗蚀剂）3，然后使用蚀刻气体8进行干蚀刻，在BPSG层2上形成接触孔2a。接着，将聚合物残渣9a，9b 使用含有0.04-0.12重量％氟化氢的清洗处理液对粘接在接触孔2a的侧壁和BPSG层2的表面上的清洁处理进行清洁处理，从而除去聚合物残渣9a和9b。在蚀刻期间，聚合物残留层9的存在防止在水平方向上的蚀刻，从而形成高精度的接触孔2a。此外，由于处理液具有上述组成，因此除去上述聚合物残渣9a和9b，从而避免电特性的任何劣化。此外，防止由于清洁处理液引起的接触孔的侧壁的腐蚀，从而保持接触孔的高水平精度。因此，即使结构具有超细间距图案，也能确保良好的电气特性。

9. 发明授权

US5885901A Rinsing solution after resist stripping process and method for manufacturing semiconductor device 失效
标题翻译：抗蚀剂剥离后的冲洗液及半导体装置的制造方法
公开(公告)号：US5885901A
公开(公告)日：1999-03-23
申请号：US773828
申请日：1996-12-27
申请人： Hideto Gotoh , Masao Miyazaki , Kiyoto Mori
发明人： Hideto Gotoh , Masao Miyazaki , Kiyoto Mori
IPC分类号： H01L21/306 , H01L21/311 , C09K13/00 , H01L21/00
CPC分类号： H01L21/02052 , H01L21/31133 , Y10S438/906
摘要： After the resist is removed with an alkaline solution, a noncorrosive rinse solution is applied to the substrate which is composed of (a) a water-soluble monovalent lower alcohol and an organic or inorganic acid, or (b) a water-soluble monovalent lower alcohol, an organic or inorganic acid and water or (c) an organic or inorganic acid. This rinse solution prevents corrosion completely when a resist is removed from Al-Si-Cu wiring :material, which is widely used as the wiring material for high-density integrated circuits.
摘要翻译：在用碱性溶液除去抗蚀剂之后，将非腐蚀性冲洗溶液施加到由（a）水溶性一价低级醇和有机或无机酸组成的基材上，或（b）水溶性单价低级醇，有机或无机酸和水，或（c）有机或无机酸。当从作为高密度集成电路的布线材料广泛使用的Al-Si-Cu布线材料去除抗蚀剂时，该冲洗溶液完全防止腐蚀。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式