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1. 发明授权

US06265309B1 Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same 有权
标题翻译：用于制造半导体器件的清洁剂和使用该半导体器件的半导体器件的制造方法
公开(公告)号：US06265309B1
公开(公告)日：2001-07-24
申请号：US09309076
申请日：1999-05-10
申请人： Hideto Gotoh , Tsuyoshi Matsui , Takayuki Niuya , Tetsuo Aoyama , Taketo Maruyama , Tetsuya Karita , Kojiro Abe , Fukusaburou Ishihara , Ryuji Sotoaka
发明人： Hideto Gotoh , Tsuyoshi Matsui , Takayuki Niuya , Tetsuo Aoyama , Taketo Maruyama , Tetsuya Karita , Kojiro Abe , Fukusaburou Ishihara , Ryuji Sotoaka
IPC分类号： H01L2102
CPC分类号： H01L21/02071 , C11D3/044 , C11D3/2006 , C11D3/2082 , C11D3/33 , C11D11/0047 , H01L21/02063 , H01L21/31138 , Y10S438/906
摘要： A cleaning agent for use in producing semiconductor devices. The cleaning agent is an aqueous solution containing (A) a fluorine-containing compound, (B) a salt of boric acid, (C) a water-soluble organic solvent, and optionally, (D) a specific quaternary ammonium salt or (D′) a specific ammonium salt of an organic carboxylic acid or a specific amine salt of an organic carboxylic acid. The polymeric deposit inside and around the via holes and on the side wall of the conductive line pattern formed during the dry etching process can be effectively removed by using the cleaning agent without affecting the dimensions of the via holes and the conductive line pattern.
摘要翻译：一种用于制造半导体器件的清洁剂。清洗剂是含有（A）含氟化合物，（B）硼酸盐，（C）水溶性有机溶剂和（D）特定季铵盐或（D） '）有机羧酸的特定铵盐或有机羧酸的特定胺盐。通过使用清洁剂可以有效地除去在干法蚀刻工艺期间形成的导电孔图案和导电线图案的侧壁上和周围的聚合物沉积物，而不影响通孔和导电线图案的尺寸。

2. 发明授权

US06514352B2 Cleaning method using an oxidizing agent, chelating agent and fluorine compound 有权
标题翻译：使用氧化剂，螯合剂和氟化合物的清洗方法
公开(公告)号：US06514352B2
公开(公告)日：2003-02-04
申请号：US09971578
申请日：2001-10-09
申请人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
发明人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
IPC分类号： C23G102
CPC分类号： C11D7/36 , B08B3/102 , C03C23/0075 , C11D3/32 , C11D3/364 , C11D3/3947 , C11D3/43 , C11D7/30 , C11D7/3263 , C11D7/5013 , C11D11/0047 , H01L21/31116 , Y10S134/902
摘要： The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and fluorine compound to flow on a surface of a material to be treated at a high speed to thereby clean the above surface according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.
摘要翻译：上述清洗方法的特征在于，允许包含氧化剂，螯合剂和氟化合物的清洗剂在高速下在待处理材料的表面上流动，从而清洁根据本发明的上述表面，能够容易地除去附着在被处理材料的表面的沉积物，而不损害被处理材料。

3. 发明授权

US06875288B2 Cleaning agent and cleaning method 失效
标题翻译：清洁剂和清洁方法
公开(公告)号：US06875288B2
公开(公告)日：2005-04-05
申请号：US09971589
申请日：2001-10-09
申请人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
发明人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
IPC分类号： B08B3/08 , B08B3/00 , C11D1/00 , C11D3/32 , C11D3/34 , C11D3/43 , C11D11/00 , C11D17/08 , H01L21/02 , H01L21/304 , H01L21/311 , H01L21/461
CPC分类号： B08B3/08 , B08B3/048 , C11D3/43 , C11D11/0064 , H01L21/02063 , H01L21/31133
摘要： The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.
摘要翻译：上述清洗剂包括表面活性剂和有机溶剂，上述清洗方法的特征在于允许上述清洗剂以高速流动在待处理材料的表面上，从而清洁上述表面。根据本发明，能够容易地除去附着在待处理材料的表面上的沉积物，而不损害被处理材料。

4. 发明授权

US5972862A Cleaning liquid for semiconductor devices 失效
标题翻译：半导体器件清洗液
公开(公告)号：US5972862A
公开(公告)日：1999-10-26
申请号：US901475
申请日：1997-07-28
申请人： Yoshimi Torii , Shunji Sasabe , Masayuki Kojima , Kazuhisa Usuami , Takafumi Tokunaga , Kazusato Hara , Yoshikazu Ohira , Tsuyoshi Matsui , Hideto Gotoh , Tetsuo Aoyama , Ryuji Hasemi , Hidetoshi Ikeda , Fukusaburo Ishihara , Ryuji Sotoaka
发明人： Yoshimi Torii , Shunji Sasabe , Masayuki Kojima , Kazuhisa Usuami , Takafumi Tokunaga , Kazusato Hara , Yoshikazu Ohira , Tsuyoshi Matsui , Hideto Gotoh , Tetsuo Aoyama , Ryuji Hasemi , Hidetoshi Ikeda , Fukusaburo Ishihara , Ryuji Sotoaka
IPC分类号： C11D7/60 , G03F7/42 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/3213 , C11D1/62 , C11D3/44 , C11D7/08
CPC分类号： H01L21/02071 , G03F7/423 , G03F7/425 , H01L21/02063 , Y10S438/974
摘要： There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.
摘要翻译：公开了一种用于制造半导体器件的清洗液，其包含（A）含氟化合物; （B）水溶性或水混溶性有机溶剂; 和（C）无机酸和/或有机酸，任选地还包含（D）季铵盐或（D'）特定的有机羧酸铵盐和/或有机羧酸胺盐; 以及通过在表面上配置有绝缘膜层或金属导电层的基板上形成抗蚀剂图案来制造半导体器件的方法，通过干蚀刻形成通孔或电布线，通过灰化除去抗蚀剂图案用氧等离子体处理; 并用上述清洗液进行清洗处理。上述清洗液和制造方法可以容易地除去在干蚀刻的情况下形成的沉积聚合物，而不损害金属膜和绝缘膜。

5. 发明申请

US20120225563A1 ETCHING LIQUID FOR ETCHING SILICON SUBSTRATE REAR SURFACE IN THROUGH SILICON VIA PROCESS AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP HAVING THROUGH SILICON VIA USING THE ETCHING LIQUID 审中-公开
标题翻译：用于通过硅来蚀刻硅基底表面的蚀刻液体，以及通过使用蚀刻液制造通过硅的半导体芯片的方法
公开(公告)号：US20120225563A1
公开(公告)日：2012-09-06
申请号：US13508475
申请日：2010-11-08
申请人： Ryuji Sotoaka , Yoshiko Fujioto
发明人： Ryuji Sotoaka , Yoshiko Fujioto
IPC分类号： H01L21/302 , C09K13/02
CPC分类号： H01L21/30608 , H01L21/76898 , H01L23/481 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05548 , H01L2224/0557 , H01L2224/05571 , H01L2224/13 , H01L2224/13009 , H01L2224/13022 , H01L2224/13025 , H01L2224/14181 , H01L2924/00014 , H01L2924/0002 , H01L2224/05552
摘要： Disclosed are an etching liquid which is used for etching a silicon substrate rear surface in a through silicon via process, etches only a silicon substrate without etching a connecting plug composed of a metal such as copper, tungsten, etc., or polysilicon or the like, and has an excellent etching rate; and a method for manufacturing a semiconductor chip having a through silicon via using the same. The etching liquid is an etching liquid for etching a silicon substrate rear surface in a through silicon via process containing potassium hydroxide, hydroxylamine, and water; and the method for manufacturing a semiconductor chip includes a silicon substrate rear surface etching step using the etching liquid.
摘要翻译：公开了一种蚀刻液，其用于通过硅通孔工艺蚀刻硅衬底后表面，仅蚀刻硅衬底而不蚀刻由诸如铜，钨等的金属或多晶硅等构成的连接插塞，并且具有优异的蚀刻速率; 以及制造具有通过硅通孔的半导体芯片的方法。蚀刻液是用于通过含有氢氧化钾，羟胺和水的通过硅经过硅蚀刻硅衬底后表面的蚀刻液; 并且制造半导体芯片的方法包括使用蚀刻液的硅衬底背面蚀刻步骤。

6. 发明申请

US20100248495A1 SILICON ETCHING LIQUID AND ETCHING METHOD 有权
标题翻译：硅蚀刻液和蚀刻方法
公开(公告)号：US20100248495A1
公开(公告)日：2010-09-30
申请号：US12681247
申请日：2008-09-22
申请人： Kazuyoshi Yaguchi , Ryuji Sotoaka
发明人： Kazuyoshi Yaguchi , Ryuji Sotoaka
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： H01L21/30608 , B81C1/00539
摘要： A silicon etching liquid characterized by anisotropically dissolving monocrystalline silicon therein by using an aqueous solution containing a quaternary ammonium hydroxide and an aminoguanidine salt and an etching method of silicon using the instant etching liquid are an etching liquid and an etching method enabling one to perform processing at a high etching rate in etching processing of silicon, particularly in etching processing of silicon in a manufacturing process of MEMS parts or semiconductor devices.
摘要翻译：通过使用含有季铵氢氧化物和氨基胍盐的水溶液和使用瞬时蚀刻液的硅的蚀刻方法，以单轴硅各向异性地溶解单晶硅为特征的硅蚀刻液是能够进行处理的蚀刻液和蚀刻方法在硅的蚀刻处理中，特别是在MEMS部件或半导体器件的制造工艺中的硅的蚀刻处理中的高蚀刻速率。

7. 发明申请

US20110146726A1 PROCESS FOR CLEANING SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：清洁半导体元件的工艺
公开(公告)号：US20110146726A1
公开(公告)日：2011-06-23
申请号：US12995303
申请日：2009-05-20
申请人： Keiichi Tanaka , Ryuji Sotoaka
发明人： Keiichi Tanaka , Ryuji Sotoaka
IPC分类号： B08B3/00
CPC分类号： H01L21/02071 , G03F7/423
摘要： In a wiring formation process for a semiconductor device, the resist residue forming in dry etching with a reactive gas and aching with a plasma gas is removed, not corroding the members of the semiconductor device such as the interlayer insulating material and the wiring material thereof, and the device is protected from after-corrosion to occur after left for a given period of time after the treatment.According to a method comprising (1) washing step with an aqueous solution containing hydrofluoric acid, (2) a washing step with a mixed solution of ammonia and hydrogen peroxide, and (3) a washing step with hydrogen peroxide water, the resist residue on the side wall of a metal wiring that comprises aluminium (Al) as the main ingredient thereof is removed, and occurrence of after-corrosion is prevented.
摘要翻译：在半导体装置的布线形成工序中，去除了用反应气体的干蚀刻形成的抗蚀剂残留物和等离子体气体的起伏，而不会腐蚀诸如层间绝缘材料及其布线材料的半导体器件的部件，并且在处理之后，在保持一段给定的时间后，保护装置免于腐蚀。根据包括（1）用含有氢氟酸的水溶液进行洗涤步骤的方法，（2）用氨和过氧化氢的混合溶液进行洗涤步骤，和（3）用过氧化氢水洗涤步骤，将抗蚀剂残留物除去以铝（Al）为主要成分的金属配线的侧壁，防止发生腐蚀。

8. 发明申请

US20070215454A1 Method for Oxidizing Substance and Oxidation Apparatus Therefor 有权
标题翻译：氧化物质及其氧化装置的方法
公开(公告)号：US20070215454A1
公开(公告)日：2007-09-20
申请号：US11597250
申请日：2005-05-18
申请人： Ryuji Sotoaka , Yoshiya Kimura
发明人： Ryuji Sotoaka , Yoshiya Kimura
IPC分类号： B01J19/12
CPC分类号： B01J19/123 , A61L2/10 , A61L2/186 , A61L2/24 , A62D3/176 , A62D3/38 , A62D2101/20 , A62D2101/22 , A62D2101/28 , A62D2203/04 , B01J19/0093 , B01J2219/00936 , B01J2219/0801 , B01J2219/0879 , B01J2219/089 , B01J2219/0892 , C01B13/322 , C01F7/428 , H05K3/385
摘要： The present invention provides a method of oxidizing a substance in a liquid containing nitrous oxide (N2O) and an oxidation apparatus therefor. In this method, oxidation of a substance is conducted by allowing a substance to be present in a solution containing nitrous oxide (N2O) and irradiating the solution with light including a wavelength of at least 240 nm or less.
摘要翻译：本发明提供一种氧化含有一氧化二氮（N 2 O 2）的液体中的物质及其氧化装置的方法。在该方法中，通过使物质存在于含有一氧化二氮（N 2 O 2 O）的溶液中并用包含至少240nm的波长的光照射溶液来进行物质的氧化，或减。

9. 发明授权

US06843981B1 Tooth bleaching compositions and methods of bleaching discolored tooth 失效
标题翻译：牙齿漂白组合物和漂白牙齿的方法
公开(公告)号：US06843981B1
公开(公告)日：2005-01-18
申请号：US10019408
申请日：2000-07-03
申请人： Takuro Ishibashi , Emi Higashiizumi , Ryuji Sotoaka , Fukusaburo Ishihara , Minoru Kakuda , Masumi Ogasawara , Kouzo Ishibashi
发明人： Takuro Ishibashi , Emi Higashiizumi , Ryuji Sotoaka , Fukusaburo Ishihara , Minoru Kakuda , Masumi Ogasawara , Kouzo Ishibashi
IPC分类号： A61C17/00 , A61K8/22 , A61K8/29 , A61Q11/00 , A61K7/16 , A61C5/00 , A61K7/20
CPC分类号： A61K8/29 , A61K8/22 , A61Q11/00
摘要： The bleaching compositions of discolored teeth comprise titanium dioxide initiating photocatalyst action with light irradiation, chemical compounds generating hydrogen peroxide in an aqueous solution and thickening agents. Further the bleaching methods of discolored teeth comprising applying the bleaching composition onto the surface area of the teeth and then initiating photocatalyst action by irradiating the applied surfaces area with light. Therefore, the present invention shows remarkable bleaching results due to easy application of the compositions onto discolored teeth and keeping the original activity of the photocatalyst without its deterioration.
摘要翻译：变色牙齿的漂白组合物包括二氧化钛引发的光照射光作用，在水溶液中产生过氧化氢的化合物和增稠剂。此外，变色牙齿的漂白方法包括将漂白组合物施加到牙齿的表面区域上，然后通过用光照射所施加的表面区域来引发光催化剂作用。因此，本发明由于易于将组合物应用于变色牙齿并保持光催化剂的原始活性而没有劣化，因此显示出显着的漂白效果。

10. 发明授权

US08562855B2 Silicon etching liquid and etching method 有权
标题翻译：硅蚀刻液和蚀刻方法
公开(公告)号：US08562855B2
公开(公告)日：2013-10-22
申请号：US12991510
申请日：2009-04-24
申请人： Kazuyoshi Yaguchi , Ryuji Sotoaka
发明人： Kazuyoshi Yaguchi , Ryuji Sotoaka
IPC分类号： H01L21/306
CPC分类号： H01L21/30608
摘要： In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etching liquid having a long life of etching liquid and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etching liquid.A silicon etching liquid which is an alkaline aqueous solution containing an alkali metal hydroxide, hydroxylamine and an inorganic carbonate compound and having a pH of 12 or more and which is able to anisotropically dissolve monocrystalline silicon therein, and an etching method of silicon using this etching liquid are provided.
摘要翻译：在MEMS的蚀刻处理中，特别是在MEMS部件的制造工序中的硅的各向异性蚀刻处理中，通过抑制加热时的蚀刻速度的降低来提供蚀刻液的寿命长的蚀刻液和蚀刻方法这是含羟胺蚀刻液的特征。一种硅蚀刻液体，其是含有碱金属氢氧化物，羟胺和无机碳酸盐化合物并且pH为12以上并且能够各向异性地溶解单晶硅的碱性水溶液，以及使用该蚀刻的硅的蚀刻方法提供液体。

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