专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08742422B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08742422B2
公开(公告)日：2014-06-03
申请号：US12871148
申请日：2010-08-30
申请人： Masayuki Sakakura , Yoshiaki Oikawa , Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba
发明人： Masayuki Sakakura , Yoshiaki Oikawa , Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/124 , G02F1/134309 , G02F1/13454 , G02F1/1368 , G02F2202/10 , H01L27/1225 , H01L27/1255
摘要： The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.
摘要翻译：半导体器件包括驱动器电路部分，其包括驱动器电路和包括像素的像素部分。像素包括具有透光性的栅极电极层，栅极绝缘层，源极电极层和漏极电极层，其各自具有设置在栅极绝缘层上的透光性，覆盖顶表面的氧化物半导体层和源极电极层和漏极电极层的侧面，并且在栅电极层之间设置有栅极绝缘层，导电层设置在氧化物半导体层的一部分上，并且具有比源极电极层和漏极电极层和与氧化物半导体层的一部分接触的氧化物绝缘层。

2. 发明授权

US08492764B2 Light-emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08492764B2
公开(公告)日：2013-07-23
申请号：US12848375
申请日：2010-08-02
申请人： Shunpei Yamazaki , Masayuki Sakakura , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Yoshiaki Oikawa
发明人： Shunpei Yamazaki , Masayuki Sakakura , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Yoshiaki Oikawa
IPC分类号： H01L29/786 , H01L21/336 , H01L33/00
CPC分类号： H01L27/3262 , H01L27/1225 , H01L27/322 , H01L27/3248 , H01L51/5278 , H01L2251/5323
摘要： A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel.
摘要翻译：包括根据多种电路的特性，在一个基板上形成多种电路的多个薄膜晶体管的发光器件。包括与源极和漏极层重叠的氧化物半导体层的倒置共面薄膜晶体管用作像素的薄膜晶体管，通道停止薄膜晶体管用作用于驱动电路的薄膜晶体管，并且在用于像素的薄膜晶体管和发光元件之间设置滤色器层，以与与像素的薄膜晶体管电连接的发光元件重叠。

3. 发明授权

US08488077B2 Display device and method for manufacturing the same 有权
公开(公告)号：US08488077B2
公开(公告)日：2013-07-16
申请号：US13363405
申请日：2012-02-01
申请人： Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Masayuki Sakakura , Yoshiaki Oikawa
发明人： Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Masayuki Sakakura , Yoshiaki Oikawa
IPC分类号： G02F1/136
CPC分类号： H01L21/477 , G02F1/133345 , G02F1/1368 , H01L21/02565 , H01L21/02664 , H01L27/1225 , H01L27/1248 , H01L27/1251 , H01L27/1259 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

4. 发明申请

US20120289008A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120289008A1
公开(公告)日：2012-11-15
申请号：US13558368
申请日：2012-07-26
申请人： Masashi TSUBUKU , Shuhei YOSHITOMI , Takahiro TUJI , Miyuki HOSOBA , Junichiro SAKATA , Hiroyuki TOMATSU , Masahiko HAYAKAWA
发明人： Masashi TSUBUKU , Shuhei YOSHITOMI , Takahiro TUJI , Miyuki HOSOBA , Junichiro SAKATA , Hiroyuki TOMATSU , Masahiko HAYAKAWA
IPC分类号： H01L21/336
CPC分类号： H01L27/1262 , H01L21/02554 , H01L21/02565 , H01L21/02595 , H01L21/02631 , H01L21/02667 , H01L27/1248 , H01L27/127 , H01L29/66765 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
摘要翻译：本发明的目的是提供一种包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中形成沟道的阈值电压为正且尽可能接近0V。形成保护绝缘层以覆盖包括通过第一热处理脱水或脱氢的氧化物半导体层的薄膜晶体管，以及在比第一热处理低的温度下进行第二热处理，其中，重复多次温度的降低，由此，在不影响通道长度的情况下，包含氧化物半导体层的薄膜晶体管，其中形成沟道的阈值电压为正且尽可能接近0V，可以制造。

5. 发明授权

US08242494B2 Method for manufacturing thin film transistor using multi-tone mask 有权
标题翻译：使用多色调掩模制造薄膜晶体管的方法
公开(公告)号：US08242494B2
公开(公告)日：2012-08-14
申请号：US12582082
申请日：2009-10-20
申请人： Hideomi Suzawa , Shinya Sasagawa , Taiga Muraoka , Shunichi Ito , Miyuki Hosoba
发明人： Hideomi Suzawa , Shinya Sasagawa , Taiga Muraoka , Shunichi Ito , Miyuki Hosoba
IPC分类号： H01L29/786
CPC分类号： H01L29/66969 , H01L27/1225 , H01L27/1288 , H01L29/66742 , H01L29/78621 , H01L29/7869
摘要： An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by wet etching in which an etchant is used, and a second etching step is performed by dry etching in which an etching gas is used.
摘要翻译：目的是以低成本，高生产率制造包括氧化物半导体的半导体器件，使得通过减少曝光掩模的数量来简化光刻工艺。在制造包括通道蚀刻反交错薄膜晶体管的半导体器件的方法中，使用使用作为曝光的多色调掩模形成的掩模层来蚀刻氧化物半导体膜和导电膜光透过该掩模以具有多个强度。在蚀刻步骤中，通过使用蚀刻剂的湿式蚀刻进行第一蚀刻步骤，并且通过使用蚀刻气体的干法蚀刻进行第二蚀刻步骤。

6. 发明申请

US20110127524A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110127524A1
公开(公告)日：2011-06-02
申请号：US12954181
申请日：2010-11-24
申请人： Shunpei Yamazaki , Miyuki Hosoba , Suzunosuke Hiraishi
发明人： Shunpei Yamazaki , Miyuki Hosoba , Suzunosuke Hiraishi
IPC分类号： H01L29/12
CPC分类号： H01L33/0041 , G02F1/1368 , H01L27/1225 , H01L27/124 , H01L27/3262 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal.
摘要翻译：公开了一种半导体器件，其包括薄膜晶体管和连接到薄膜晶体管的布线，其中薄膜晶体管在氧化物半导体层中具有沟道形成区域，并且铜金属用于栅电极中的至少一个源电极，漏电极，栅极布线，源极布线和漏极布线。具有氧化物半导体层的晶体管的极低的截止电流有助于降低半导体器件的功耗。此外，铜金属的使用允许半导体器件与显示元件的组合提供具有高显示质量和可忽略的缺陷的显示器件，这是由于由铜金属形成的布线和电极的低电阻引起的。

7. 发明申请

US20110006301A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20110006301A1
公开(公告)日：2011-01-13
申请号：US12832333
申请日：2010-07-08
申请人： Shunpei YAMAZAKI , Hiroki OHARA , Junichiro SAKATA , Toshinari SASAKI , Miyuki HOSOBA
发明人： Shunpei YAMAZAKI , Hiroki OHARA , Junichiro SAKATA , Toshinari SASAKI , Miyuki HOSOBA
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L27/127 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1274 , H01L27/1296 , H01L29/04 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.
摘要翻译：目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。在包括薄膜晶体管的半导体器件的制造方法中，其中包括沟道形成区域的半导体层用作氧化物半导体膜，用于减少诸如水分的杂质（脱水或脱氢热处理）的热处理在形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。然后，在漏极电极层，栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质它们与氧化物半导体层接触。

8. 发明申请

US20100105163A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100105163A1
公开(公告)日：2010-04-29
申请号：US12582079
申请日：2009-10-20
申请人： Shunichi ITO , Miyuki HOSOBA , Hideomi SUZAWA , Shinya SASAGAWA , Taiga MURAOKA
发明人： Shunichi ITO , Miyuki HOSOBA , Hideomi SUZAWA , Shinya SASAGAWA , Taiga MURAOKA
IPC分类号： H01L21/336
CPC分类号： H01L29/66969 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L29/7869
摘要： An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by dry etching in which an etching gas is used, and a second etching step is performed by wet etching in which an etchant is used.
摘要翻译：目的是以低成本，高生产率制造包括氧化物半导体的半导体器件，使得通过减少曝光掩模的数量来简化光刻工艺。在制造包括通道蚀刻反交错薄膜晶体管的半导体器件的方法中，使用使用作为曝光的多色调掩模形成的掩模层来蚀刻氧化物半导体膜和导电膜光透过该掩模以具有多个强度。在蚀刻步骤中，通过使用蚀刻气体的干蚀刻进行第一蚀刻步骤，并且通过使用蚀刻剂的湿蚀刻进行第二蚀刻步骤。

9. 发明授权

US08912541B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08912541B2
公开(公告)日：2014-12-16
申请号：US12848397
申请日：2010-08-02
申请人： Shunpei Yamazaki , Junichiro Sakata , Miyuki Hosoba , Eriko Nishida
发明人： Shunpei Yamazaki , Junichiro Sakata , Miyuki Hosoba , Eriko Nishida
IPC分类号： H01L29/12 , H01L27/12 , H01L29/45
CPC分类号： H01L29/45 , H01L27/1214 , H01L27/1225 , H01L27/124
摘要： One object of the present invention is to increase an aperture ratio of a semiconductor device. A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor (TFT) in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The pixel portion has light-transmitting properties. Further, a material of source and drain electrode layers of a second TFT in the driver circuit is different from a material of those of the first TFT.
摘要翻译：本发明的一个目的是增加半导体器件的开口率。像素部分和驱动电路设置在一个基板上。像素部中的第一薄膜晶体管（TFT）包括：在基板上的栅电极层; 栅电极层上的栅极绝缘层; 栅极绝缘层上的氧化物半导体层; 氧化物半导体层上的源极和漏极电极层; 栅极绝缘层，氧化物半导体层，源极和漏极电极层上的与氧化物半导体层的一部分接触的保护绝缘层; 以及保护绝缘层上的像素电极层。像素部分具有透光性。此外，驱动电路中的第二TFT的源极和漏极电极层的材料与第一TFT的材料不同。

10. 发明授权

US08878172B2 Oxide semiconductor, thin film transistor, and display device 有权
标题翻译：氧化物半导体，薄膜晶体管和显示装置
公开(公告)号：US08878172B2
公开(公告)日：2014-11-04
申请号：US12581187
申请日：2009-10-19
申请人： Shunichi Ito , Toshinari Sasaki , Miyuki Hosoba , Junichiro Sakata
发明人： Shunichi Ito , Toshinari Sasaki , Miyuki Hosoba , Junichiro Sakata
IPC分类号： H01L29/10 , H01L29/786 , H01L29/45 , H01L27/12
CPC分类号： H01L27/1225 , G09G3/20 , H01L27/1248 , H01L27/1259 , H01L29/247 , H01L29/45 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.
摘要翻译：目的是控制氧化物半导体的组成和缺陷，另一个目的是增加薄膜晶体管的场效应迁移率，并获得具有减小的截止电流的足够的开 - 关比。解决方案是使用其组成由InMO 3（ZnO）m表示的氧化物半导体，其中M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素，m优选为非 - 整数大于0且小于1. Zn的浓度低于In和M的浓度。氧化物半导体具有无定形结构。可以提供氧化物和氮化物层以防止氧化物半导体的污染和劣化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式