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1. 发明授权

US4314014A Electrophotographic plate and process for preparation thereof 失效
标题翻译：电子照相板及其制备方法
公开(公告)号：US4314014A
公开(公告)日：1982-02-02
申请号：US158369
申请日：1980-06-11
申请人： Hideaki Yamamoto , Akio Taniguchi , Shinkichi Horigome , Susumu Saito , Yoshiaki Mori , Eiichi Maruyama
发明人： Hideaki Yamamoto , Akio Taniguchi , Shinkichi Horigome , Susumu Saito , Yoshiaki Mori , Eiichi Maruyama
IPC分类号： G03G5/043 , G03G5/08 , G03G5/082
CPC分类号： G03G5/0436 , G03G5/0433
摘要： Disclosed is an electrophotographic plate having a laminated structure comprising a first Se layer containing 3 to 10% by weight of As, a second Se layer containing 40 to 47% by weight of Te and 3 to 10% by weight of As and a fourth Se layer consisting solely of Se or comprising Se and up to 10% by weight of As or an organic semiconductor layer, wherein a substrate is arranged so that at least the face of the substrate which is contiguous to the face of one of said first Se layer and said fourth Se layer or organic semiconductor layer, that is located on the outer side of the laminated structure, is electrically conductive.It is preferred that the fourth Se layer be formed by vacuum evaporation deposition while maintaining the substrate temperature at 50.degree. to 80.degree. C. The residual potential of the electrophotographic plate can be reduced.
摘要翻译：公开了一种具有叠层结构的电子照相板，其包括含有3至10重量％的As的第一Se层，包含40至47重量％的Te和3至10重量％的As的第二Se层和第四Se 由Se组成或包含Se和至多10重量％的As或有机半导体层的层，其中衬底被布置成使得至少衬底的与所述第一Se层之一的表面相邻的面并且位于层叠结构的外侧的所述第四Se层或有机半导体层是导电的。优选地，通过真空蒸发沉积形成第四Se层，同时将衬底温度保持在50℃至80℃。可以减小电子照相板的残留电位。

2. 发明授权

US4377628A Electrophotographic member with .alpha.-Si and H 失效
标题翻译：具有α-Si和H的电子照相元件
公开(公告)号：US4377628A
公开(公告)日：1983-03-22
申请号：US257346
申请日：1981-04-24
申请人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
发明人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
IPC分类号： G03G5/08 , G03F7/20 , G03G5/082 , H01L31/08 , G03G5/14
CPC分类号： G03F7/70216 , G03F7/707 , G03G5/08221 , G03G5/08235
摘要： Disclosed is an electrophotographic member having an amorphous-silicon photoconductive layer, wherein the distance between a portion in which light illuminating the photoconductor is absorbed therein until its intensity decreases to 1% of that at incidence and the interface of the photoconductor opposite to the light incidence side thereof is at most 5 .mu.m, whereby the residual potential of the photoconductive layer can be reduced.That part of the photoconductive layer constituting the electrophotographic member which is at least 10 nm thick inwardly of the photoconductive layer from the surface thereof to store charges is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..multidot.cm. Further, within such photoconductive layer, a region of amorphous silicon which has an optical forbidden band gap smaller than that of the amorphous silicon forming the surface part is disposed at a thickness of at least 10 nm. By forming the region of the narrower optical forbidden band gap within the photoconductive layer in this manner, the sensitivity of the photoconductive layer to light of longer wavelengths can be enhanced.
摘要翻译：公开了具有非晶硅光电导层的电子照相构件，其中照射光电导体的光被吸收到其中的部分之间的距离，直到其强度降低到其入射时的1％，并且光电导体的与光入射相反的界面一侧为5μm以下，能够降低光电导层的残留电位。构成电子照相构件的光电导元件的从其表面向内存储电荷的至少10nm厚的电子照相构件的部分由非晶硅制成，其具有至少1.6eV的光学禁带宽和电阻率至少1010 OMEGA xcm。此外，在这种光导电层内，具有比形成表面部分的非晶硅的光学禁带宽小的非晶硅区域设置在至少10nm的厚度。通过以这种方式在光导电层内形成较窄的光学禁带区域，可以提高光电导层对较长波长的光的灵敏度。

3. 发明授权

US4365013A Electrophotographic member 失效
标题翻译：电子照相成份
公开(公告)号：US4365013A
公开(公告)日：1982-12-21
申请号：US287633
申请日：1981-07-28
申请人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
发明人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
IPC分类号： G03G5/08 , C23C14/14 , C23C14/35 , G03G5/082 , G03G5/14 , G03G5/147 , H01L31/08
CPC分类号： G03G5/08235 , G03G5/144 , G03G5/14704
摘要： Disclosed is an electrophotographic member having at least a supporter and a photoconductor layer formed mainly of amorphous silicon, characterized in that the amorphous silicon contains at least 50 atomic-% of silicon and at least 1 atomic-% of hydrogen as an average within the layer, and that a part which is at least 10 nm thick from a surface or/and interface of the photoconductor layer toward the interior of the photoconductor layer has a hydrogen content in a range of at least 1 atomic-% to at most 40 atomic-% and an optical forbidden band gap in a range of at least 1.3 eV to at most 2.5 eV and also has the property that an intensity of at least one of peaks having centers at wave numbers of approximately 2,200 cm.sup.-1, approximately 1,140 cm.sup.-1, approximately 1,040 cm.sup.-1, approximately 650 cm.sup.-1, approximately 860 cm.sup.-1 and approximately 800 cm.sup.-1 in an infrared absorption spectrum as are attributed to a bond between silicon and oxygen does not exceed 20% of a higher one of intensities of peaks having centers at wave numbers of approximately 2,000 cm.sup.-1 and approximately 2,100 cm.sup.-1 as are attributed to a bond between silicon and hydrogen. Dark decay characteristics are good, and a satisfactory surface potential can be secured. In addition, the characteristics are stable versus time.
摘要翻译：公开了一种具有至少一种支撑体和主要由非晶硅形成的感光体层的电子照相构件，其特征在于，所述无定形硅含有至少50原子％的硅和至少1原子％的氢在该层内的平均值并且从光电导体层的表面或/和界面朝向光电导体层的内部至少10nm厚的部分具有至少1原子％至至多40原子级的范围内的氢含量，至少1.3eV至至多2.5eV的范围内的光学禁带宽度，并且还具有以波数约2,200cm-1为中心的至少一个峰的强度，约为1140cm- 在归因于硅和氧之间的键的红外吸收光谱中，约1,040cm -1，约650cm -1，约650cm -1，约860cm -1和约800cm -1不超过硅和氧之间的键的20％强度o f峰由于硅和氢之间的键而归因于波数约2,000cm -1和约2,100cm -1的中心。暗衰变特性良好，可以确保令人满意的表面电位。此外，特性与时间相比是稳定的。

4. 发明授权

US4378417A Electrophotographic member with .alpha.-Si layers 失效
标题翻译：具有α-Si层的电子照相元件
公开(公告)号：US4378417A
公开(公告)日：1983-03-29
申请号：US254294
申请日：1981-04-15
申请人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
发明人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
IPC分类号： G03G5/08 , G03G5/082 , H01L21/205 , H01L31/08
CPC分类号： G03G5/08235 , G03G5/08221
摘要： In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.
摘要翻译：在采用非晶硅光电导层的电子照相构件中，从非晶硅层的表面（或界面）向内至少10nm厚的非晶硅层的部分由非晶硅制成，该非晶硅具有光学禁带隙至少1.6eV，电阻率至少为1010欧米加。电子照相成像显示出令人满意的分辨率和良好的暗衰变特性。此外，具有窄于形成表面（或界面）区域的非晶硅的光学禁止带隙的区域设置在至少10nm的厚度的非晶硅层内，由此将电子照相构件的灵敏度设置为可以增加更长波长的光。

5. 再颁专利

USRE33094E Electrophotographic member with alpha-si layers 失效
标题翻译：具有α-si层的电子照相元件
公开(公告)号：USRE33094E
公开(公告)日：1989-10-17
申请号：US162312
申请日：1986-09-11
申请人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
发明人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
IPC分类号： G03G5/08 , G03G5/082 , H01L21/205 , H01L31/08
CPC分类号： G03G5/08235 , G03G5/08221
摘要： In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.

6. 发明授权

US4227078A Photo-sensor 失效
标题翻译：光传感器
公开(公告)号：US4227078A
公开(公告)日：1980-10-07
申请号：US918273
申请日：1978-06-22
申请人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
发明人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H04N1/028 , G02B6/42 , G06K9/20 , H01L27/144 , H01L27/146 , H01L31/02 , H01L31/0232 , H04N1/031 , G02B5/14
CPC分类号： H04N1/0312 , G02B6/421 , G02B6/4249 , G06K9/2009 , H01L27/1446 , H04N1/0311 , H04N1/0315
摘要： A photo-sensor wherein a bundle of optical fibers in the form of a sheet is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate, an array of photosensitive elements is disposed integrally with the substrate in such a manner that at least one transparent insulating layer intervenes between the photoelectric elements and the optical fiber bundle on, at least, an end face of the optical fiber bundle on the first surface side of the substrate, and an end face of the optical fiber bundle open to the second surface of the substrate serves as an information reading face.
摘要翻译：一种光传感器，其中将片状形式的一束光纤设置在预定的基板内，光纤束从基板的第一表面延伸到第二表面，光敏元件阵列与基板，使得至少一个透明绝缘层介于光电元件和光纤束之间，至少在基板的第一表面侧上的光纤束的端面和向基板的第二表面开放的光纤束用作信息读取面。

7. 发明授权

US4323912A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4323912A
公开(公告)日：1982-04-06
申请号：US152690
申请日：1980-05-23
申请人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
发明人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
摘要翻译：在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上，设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

8. 发明授权

US4199777A Semiconductor device and a method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4199777A
公开(公告)日：1980-04-22
申请号：US764845
申请日：1977-02-02
申请人： Eiichi Maruyama , Hideaki Yamamoto
发明人： Eiichi Maruyama , Hideaki Yamamoto
IPC分类号： H01L27/15 , H01L23/14 , H01L23/538 , H01L25/16 , H01L27/146 , H01L29/267 , H01L31/00 , H01L29/06
CPC分类号： H01L27/14665 , H01L23/147 , H01L23/538 , H01L24/18 , H01L24/24 , H01L25/16 , H01L29/267 , H01L31/00 , H01L33/00 , H01L2224/24147 , H01L2224/32145 , H01L2224/73267 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/15173 , H01L2924/15787
摘要： A semiconductor device includes at least two different elements having different functions. At least one of the elements is fixed within a recess provided in a substrate, and wirings are provided on an insulating film deposited commonly on the elements and the substrate, so that there is no step or clearance between the elements or between the element and the substrate, making it possible to easily form good interconnections.
摘要翻译：半导体器件包括具有不同功能的至少两个不同元件。至少一个元件被固定在设置在基板中的凹槽内，并且布线设置在通常在元件和基板上沉积的绝缘膜上，使得元件之间或元件之间不存在台阶或间隙衬底，使得可以容易地形成良好的互连。

9. 发明授权

US4232219A Photosensor 失效
标题翻译：光电传感器
公开(公告)号：US4232219A
公开(公告)日：1980-11-04
申请号：US15615
申请日：1979-02-27
申请人： Hideaki Yamamoto , Toshihisa Tsukada , Eiichi Maruyama , Hiroya Inagaki
发明人： Hideaki Yamamoto , Toshihisa Tsukada , Eiichi Maruyama , Hiroya Inagaki
IPC分类号： H04N1/028 , G03F3/08 , H04N1/04 , H04N1/46 , H04N1/48 , G02B5/14
CPC分类号： H04N1/486
摘要： A photosensor including a fiber substrate having a light receiving window formed in a surface thereof spaced from an information surface to be read, a bundle of optical fibers disposed in the fiber substrate and positioned in the light receiving window. A plurality of color filters of different characteristics are disposed on an end face of the bundle of optical fibers, and a plurality of arrays of photosensitive elements corresponding to the color filters are also provided. The arrays of photosensitive elements are integrally provided with the fiber substrate and disposed in the region of the end face of the bundle of the optical fibers farthest away from the information surface.
摘要翻译：一种光传感器，包括具有形成在与要读取的信息表面间隔开的表面中的光接收窗口的光纤基板，设置在光纤基板中并位于光接收窗口中的一束光纤。具有不同特性的多个滤色器设置在光纤束的端面上，并且还提供了与滤色器对应的多个感光元件阵列。感光元件阵列与光纤基片一体地设置，并且设置在离信息表面最远的光纤束的端面的区域中。

10. 发明授权

US4394749A Photoelectric device and method of producing the same 失效
标题翻译：光电器件及其制造方法
公开(公告)号：US4394749A
公开(公告)日：1983-07-19
申请号：US154999
申请日：1980-05-30
申请人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
发明人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
IPC分类号： H01L27/146 , G11C13/00
CPC分类号： H01L27/14665
摘要： A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.
摘要翻译：具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分，覆盖电极层和覆盖光导材料层的透明电极，其特征在于，所述光导材料层由主要包含Se的无定形硫族化物材料制成。非常有利的是，由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。无定形硫族化物材料在以下方面非常有用。在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中，至少在光电导体的软化点的温度下进行热处理以使层平坦化，由此可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。

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