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1. 发明申请

WO2010087798A1 MULTI-WAY ELECTRICAL SWITCH 审中-公开
标题翻译：多路电气开关
公开(公告)号：WO2010087798A1
公开(公告)日：2010-08-05
申请号：PCT/US2009/000621
申请日：2009-01-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , FIORENTINO, Marco , WU, Wei , STRACHAN, John Paul
发明人： FIORENTINO, Marco , WU, Wei , STRACHAN, John Paul
IPC分类号： H01H25/04 , H01H25/06
CPC分类号： H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/146 , Y10T307/826
摘要： Embodiments of the present invention include a family of multi-way switches that can be configured to output an input signal to any combination of n output signal lines. Certain embodiments of the present invention employ a memristive junction between the input signal and each output signal line, the state of which is configured by one or more control signal lines. The memristive junction between the input signal line and each output signal can be switched between a stable, low-conductance state and a high-conductance state. A wide variety of different types of multi-way switches may be fabricated according to various embodiments of the present invention.
摘要翻译：本发明的实施例包括可以被配置为将输入信号输出到n个输出信号线的任何组合的多路开关系列。本发明的某些实施例在输入信号和每个输出信号线之间采用忆阻结，其状态由一个或多个控制信号线构成。输入信号线和每个输出信号之间的忆阻结可以在稳定的低电导状态和高电导状态之间切换。根据本发明的各种实施例，可以制造各种不同类型的多路开关。

2. 发明申请

WO2011028210A1 SWITCHABLE JUNCTION WITH AN INTRINSIC DIODE FORMED WITH A VOLTAGE DEPENDENT RESISTOR 审中-公开
标题翻译：具有电压依赖电阻器形成的内部二极管的可切换连接
公开(公告)号：WO2011028210A1
公开(公告)日：2011-03-10
申请号：PCT/US2009/056061
申请日：2009-09-04
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , STRACHAN, John Paul , BORGHETTI, Julien , PICKETT, Matthew D.
发明人： YANG, Jianhua , STRACHAN, John Paul , BORGHETTI, Julien , PICKETT, Matthew D.
IPC分类号： H01L29/40 , H01L29/861 , H01L27/115
CPC分类号： H01L27/1021 , G11C13/0007 , G11C2213/12 , G11C2213/32 , G11C2213/34 , G11C2213/72 , G11C2213/73 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L29/8615 , H01L29/872 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： A switchable junction (600) having an intrinsic diode (634) formed with a voltage dependent resistor (640) is disclosed. The switchable junction comprises a first electrode (618), a second electrode (622), and a memristive matrix (620) configured to form an electrical interface (626) with the first electrode (618). The electrical interface has a programmable conductance. The voltage dependent resistor (640) is in electrical contact with the memristive matrix (620). The voltage dependent resistor is configured to form a rectifying diode interface (628) with the second electrode (622).
摘要翻译：公开了具有形成有电压依赖电阻器（640）的本征二极管（634）的可切换接点（600）。可切换接头包括第一电极（618），第二电极（622）和配置成与第一电极（618）形成电接口（626）的忆阻矩阵（620）。电气接口具有可编程电导。电压相关电阻器（640）与忆阻矩阵（620）电接触。电压相关电阻器被配置为与第二电极（622）形成整流二极管接口（628）。

3. 发明申请

WO2011028208A1 MEMRISTORS BASED ON MIXED-METAL-VALENCE COMPOUNDS 审中-公开
标题翻译：基于混合金属化合物的成像仪
公开(公告)号：WO2011028208A1
公开(公告)日：2011-03-10
申请号：PCT/US2009/056022
申请日：2009-09-04
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WILLIAMS, R. Stanley , YANG, Jianhua , PICKETT, Matthew , RIBEIRO, Gilberto , STRACHAN, John Paul
发明人： WILLIAMS, R. Stanley , YANG, Jianhua , PICKETT, Matthew , RIBEIRO, Gilberto , STRACHAN, John Paul
IPC分类号： H01L29/40
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor (100, 100', 100") based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact with at least one layer (110, 110a, 110b) of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field (125). One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer (110a) of a fully oxidized phase and the other is in electrical contact with the layer (or other layer (110b)) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode (100') and an ON-switched diode (100") are also provided. A method of operating the memristor is further provided.
摘要翻译：基于混合金属化合物的忆阻器（100,100'，100“）包括：第一电极（115）;第二电极（120）;物理上的混合金属价态的层（105）与完全氧化相的至少一层（110,1 110a，110b）接触，混合金属价相基本上是完全氧化相的掺杂剂的凝结相，其在响应中漂入和流出完全氧化相第一和第二电极中的一个与混合金属价相的层或完全氧化相的层（110a）电接触，另一个与电接触与完全氧化相的层（或其他层（110b））形成。忆阻器通过以任何顺序形成混合金属价态相和完全氧化相的层而制备。还提供了可逆二极管（100'）和导通开关二极管（100“）。还提供了一种操作忆阻器的方法。

4. 发明申请

WO2010068221A1 MEMRISTIVE DEVICE 审中-公开
标题翻译：测量装置
公开(公告)号：WO2010068221A1
公开(公告)日：2010-06-17
申请号：PCT/US2008/086667
申请日：2008-12-12
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WU, Wei , STRACHAN, John Paul , WILLIAMS, R. Stanley , FIORENTINO, Marco , WANG, Shih-yuan , QUITORIANO, Nathaniel J. , CHO, Hans S. , BORGHETTI, Julien , MATHAI, Sagi Varghese
发明人： WU, Wei , STRACHAN, John Paul , WILLIAMS, R. Stanley , FIORENTINO, Marco , WANG, Shih-yuan , QUITORIANO, Nathaniel J. , CHO, Hans S. , BORGHETTI, Julien , MATHAI, Sagi Varghese
IPC分类号： H01L21/265 , G11C16/00 , G11C16/02
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device (200) includes a memristive matrix (240), mobile dopants (255) moving with the memristive matrix (240) in response to programming electrical fields and remaining stable within the memristive matrix (240) in the absence of the programming electrical fields; and at least three electrodes (210, 220, 230) surrounding the memristive matrix (240). A method for tuning electrical circuits with a memristive device (900) includes measuring a circuit characteristic (805) and applying a programming voltage to the memristive device (900) which causes motion of dopants within the memristive device (900) to alter the circuit characteristic (805). A method for increasing a switching speed of a memristive device (1300) includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions (1380, 1390) and then switching the memristive device (1300) to a conductive state by applying a programming voltage which rapidly merges the two conductive regions (1380, 1390) to form a conductive pathway between a source electrode (1310) and a drain electrode (1320).
摘要翻译：忆阻路由设备（200）包括忆阻矩阵（240），移动掺杂物（255）响应于编程电场而与忆阻矩阵（240）一起移动，并且在没有编程的情况下保持稳定在忆阻矩阵（240）内电场; 以及围绕所述忆阻矩阵（240）的至少三个电极（210,220,230）。一种利用忆阻器件（900）来调谐电路的方法包括测量电路特性（805）并将编程电压施加到忆阻器件（900），其使得忆阻器件（900）内的掺杂剂的运动改变电路特性（805）。提高忆阻装置（1300）的切换速度的方法包括将来自两个几何分离的位置的掺杂剂绘制成紧邻形成两个导电区域（1380,1390），然后通过应用将所述忆阻装置（1300）切换到导电状态编程电压，其迅速地合并两个导电区域（1380,1390）以在源电极（1310）和漏电极（1320）之间形成导电通路。

5. 发明申请

WO2013130064A1 MEMRISTOR WITH CHANNEL REGION IN THERMAL EQUILIBRIUM WITH CONTAINING REGION 审中-公开
标题翻译：具有通道区域的带有包含区域的热平衡的仪器
公开(公告)号：WO2013130064A1
公开(公告)日：2013-09-06
申请号：PCT/US2012/027101
申请日：2012-02-29
申请人： Hewlett-Packard Development Company, L.P. , MIAO, Feng , YANG, Jianhua , STRACHAN, John Paul , YI, Wei , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
发明人： MIAO, Feng , YANG, Jianhua , STRACHAN, John Paul , YI, Wei , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译：具有与含有区域的热平衡的通道区域的忆阻器。通道区域具有可变浓度的移动离子。由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。

6. 发明申请

WO2012177265A1 HIGH-RELIABILITY HIGH-SPEED MEMRISTOR 审中-公开
标题翻译：高可靠性高速电容器
公开(公告)号：WO2012177265A1
公开(公告)日：2012-12-27
申请号：PCT/US2011/041881
申请日：2011-06-24
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , MIAO, Feng , YANG, Jianhua , STRACHAN, John Paul , YI, Wei , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
发明人： MIAO, Feng , YANG, Jianhua , STRACHAN, John Paul , YI, Wei , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
摘要翻译：忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。开关层包含导电通道和储存区。导电通道具有可变浓度的移动离子的费米玻璃材料。储存区相对于传导通道横向设置，并且用作导电通道的移动离子的源/汇。在切换操作中，在电场和热效应的协同驱动力下，移动离子被移入或移出横向设置的储存区，以改变导电通道中的可移动离子的浓度，以改变导电通道费米玻璃材料。

7. 发明申请

WO2010077245A1 MUTLIPLEXER/DE-MULTIPLEXER MEMRISTIVE DEVICE 审中-公开
标题翻译： MUTLIPLEXER /多路复用器测量装置
公开(公告)号：WO2010077245A1
公开(公告)日：2010-07-08
申请号：PCT/US2008/088583
申请日：2008-12-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , STRACHAN, John Paul , FIORENTINO, Marco Fiorentino , WU, Wei
发明人： STRACHAN, John Paul , FIORENTINO, Marco Fiorentino , WU, Wei
IPC分类号： H01L27/115 , H01L21/8247 , H03K17/687
CPC分类号： H03K17/005 , G11C13/0002 , H01L45/08 , H01L45/1206 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H03K17/007
摘要： A multiplexing/de-multiplexing memristive device (300) includes a memristive matrix (370) containing mobile dopants; and programming electrodes (310, 320) which apply programming electrical field such that the mobile dopants selectively form a conductive band (380) which connects a first signal electrode (330) to one of a plurality of second electrodes (350). A method for operating a multiplexing/de-multiplexing memristive device (300) includes applying a programming electrical field to achieve a first dopant configuration in a memristive matrix (370), the first dopant configuration connecting a base electrode (330) to a input/output electrode (350); conducting an electrical current from between the base electrode (330) and the input/output electrode (350); and applying a second programming electrical field to achieve a second dopant configuration, the second dopant configuration connecting the base electrode (330) to a second input/output electrode (350); and conducting an electrical current from the base electrode (330) to the second input/output electrode (360).
摘要翻译：复用/解复用忆阻器（300）包括含有移动掺杂剂的忆阻矩阵（370）; 以及编程电极（310,320），其施加编程电场，使得所述移动掺杂剂选择性地形成将第一信号电极（330）连接到多个第二电极（350）中的一个的导电带（380）。一种用于操作多路复用/解复用忆阻器件（300）的方法包括施加编程电场以实现在忆阻矩阵（370）中的第一掺杂剂配置，所述第一掺杂剂配置将基极（330）连接到输入/ 输出电极（350）; 从所述基极（330）和所述输入/输出电极（350）之间传导电流; 以及施加第二编程电场以实现第二掺杂剂配置，所述第二掺杂剂配置将所述基极（330）连接到第二输入/输出电极（350）; 并从基极（330）向第二输入/输出电极（360）传导电流。

8. 发明申请

WO2011093891A1 MEMRISTOR WITH CONTROLLED ELECTRODE GRAIN SIZE 审中-公开
标题翻译：具有控制电极粒度的电容器
公开(公告)号：WO2011093891A1
公开(公告)日：2011-08-04
申请号：PCT/US2010/022644
申请日：2010-01-29
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , STRACHAN, John Paul , PICKETT, Matthew D. , WILLIAMS, R Stanley
发明人： YANG, Jianhua , STRACHAN, John Paul , PICKETT, Matthew D. , WILLIAMS, R Stanley
IPC分类号： H01L29/417 , H01L21/8239
CPC分类号： H01L45/146 , H01L27/2472 , H01L45/04 , H01L45/1253
摘要： A memristor (100) with a controlled electrode grain size includes an adhesion layer (112), a first electrode (102) having a first surface contacting the adhesion layer and a second surface opposite the first surface, in which the first electrode is formed of an alloy of a base material and at least one second material, and in which the alloy has a relatively smaller grain size than a grain size of the base material. The memristor (100) also includes a switching layer (110) positioned adjacent to the second surface of the first electrode and a second electrode (104) positioned adjacent to the switching layer.
摘要翻译：具有受控电极晶粒尺寸的忆阻器（100）包括粘合层（112），具有接触粘附层的第一表面的第一电极和与第一表面相对的第二表面的第一电极，其中第一电极由基材和至少一种第二材料的合金，并且其中合金具有比基材的晶粒尺寸更小的晶粒尺寸。忆阻器（100）还包括邻近第一电极的第二表面定位的开关层（110）和邻近开关层定位的第二电极（104）。

9. 发明申请

WO2010085282A1 THERMALLY STABLE NANOSCALE SWITCHING DEVICE 审中-公开
标题翻译：热稳定的纳米开关器件
公开(公告)号：WO2010085282A1
公开(公告)日：2010-07-29
申请号：PCT/US2009/052250
申请日：2009-07-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , WILLIAMS, Stanley , BORGHETTI, Julien , STRACHAN, John Paul
发明人： YANG, Jianhua , WILLIAMS, Stanley , BORGHETTI, Julien , STRACHAN, John Paul
IPC分类号： H01H1/02
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L27/2463 , H01L29/8615 , H01L45/08 , H01L45/1206 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device provides enhanced thermal stability and endurance to switching cycles. The switching device has an active region disposed between electrodes and containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. At least one of the electrodes is formed of conductive material having a melting point greater than 1800 °C.
摘要翻译：纳米尺度开关器件提供了对开关周期的增强的热稳定性和耐久性。开关器件具有设置在电极之间的有源区，并且包含能够承载一种掺杂剂并在电场下输送掺杂剂的开关材料。至少一个电极由熔点大于1800℃的导电材料形成。

10. 发明公开

EP2443657A1 MEMRISTORS BASED ON MIXED-METAL-VALENCE COMPOUNDS 审中-公开
标题翻译：基于混合金属价化合物的MEMRISTORS
公开(公告)号：EP2443657A1
公开(公告)日：2012-04-25
申请号：EP09849071.7
申请日：2009-09-04
申请人： Hewlett-Packard Development Company, L.P.
发明人： WILLIAMS, R. Stanley , YANG, Jianhua , PICKETT, Matthew , RIBEIRO, Gilberto , STRACHAN, John Paul
IPC分类号： H01L29/40
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor (100, 100', 100") based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact with at least one layer (110, 110a, 110b) of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field (125). One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer (110a) of a fully oxidized phase and the other is in electrical contact with the layer (or other layer (110b)) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode (100') and an ON-switched diode (100") are also provided. A method of operating the memristor is further provided.
摘要翻译：一种基于混合金属价化合物的忆阻器（100,100'，100“），包括：第一电极（115）;第二电极（120）;混合金属化合价相的层（105）与完全氧化相的至少一个层（110,110a，110b）接触，混合金属价相基本上是完全氧化相的掺杂剂的凝聚相，响应漂移进入和完全氧化相施加电场（125），第一和第二电极中的一个电极与混合金属价态层或完全氧化相的层（110a）电接触，另一个电接触与完全氧化相的层（或其它层（110b））一起形成忆阻器。忆阻器通过以任意顺序形成混合金属价相层和完全氧化相层，一个在另一个上。还提供可逆二极管（100'）和开关二极管（100“）。还提供了一种操作忆阻器的方法。

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