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    • 1. 发明申请
    • MUTLIPLEXER/DE-MULTIPLEXER MEMRISTIVE DEVICE
    • MUTLIPLEXER /多路复用器测量装置
    • WO2010077245A1
    • 2010-07-08
    • PCT/US2008/088583
    • 2008-12-30
    • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.STRACHAN, John PaulFIORENTINO, Marco FiorentinoWU, Wei
    • STRACHAN, John PaulFIORENTINO, Marco FiorentinoWU, Wei
    • H01L27/115H01L21/8247H03K17/687
    • H03K17/005G11C13/0002H01L45/08H01L45/1206H01L45/14H01L45/145H01L45/146H01L45/147H03K17/007
    • A multiplexing/de-multiplexing memristive device (300) includes a memristive matrix (370) containing mobile dopants; and programming electrodes (310, 320) which apply programming electrical field such that the mobile dopants selectively form a conductive band (380) which connects a first signal electrode (330) to one of a plurality of second electrodes (350). A method for operating a multiplexing/de-multiplexing memristive device (300) includes applying a programming electrical field to achieve a first dopant configuration in a memristive matrix (370), the first dopant configuration connecting a base electrode (330) to a input/output electrode (350); conducting an electrical current from between the base electrode (330) and the input/output electrode (350); and applying a second programming electrical field to achieve a second dopant configuration, the second dopant configuration connecting the base electrode (330) to a second input/output electrode (350); and conducting an electrical current from the base electrode (330) to the second input/output electrode (360).
    • 复用/解复用忆阻器(300)包括含有移动掺杂剂的忆阻矩阵(370); 以及编程电极(310,320),其施加编程电场,使得所述移动掺杂剂选择性地形成将第一信号电极(330)连接到多个第二电极(350)中的一个的导电带(380)。 一种用于操作多路复用/解复用忆阻器件(300)的方法包括施加编程电场以实现在忆阻矩阵(370)中的第一掺杂剂配置,所述第一掺杂剂配置将基极(330)连接到输入/ 输出电极(350); 从所述基极(330)和所述输入/输出电极(350)之间传导电流; 以及施加第二编程电场以实现第二掺杂剂配置,所述第二掺杂剂配置将所述基极(330)连接到第二输入/输出电极(350); 并从基极(330)向第二输入/输出电极(360)传导电流。