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1. 发明申请

WO2011093891A1 MEMRISTOR WITH CONTROLLED ELECTRODE GRAIN SIZE 审中-公开
标题翻译：具有控制电极粒度的电容器
公开(公告)号：WO2011093891A1
公开(公告)日：2011-08-04
申请号：PCT/US2010/022644
申请日：2010-01-29
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , STRACHAN, John Paul , PICKETT, Matthew D. , WILLIAMS, R Stanley
发明人： YANG, Jianhua , STRACHAN, John Paul , PICKETT, Matthew D. , WILLIAMS, R Stanley
IPC分类号： H01L29/417 , H01L21/8239
CPC分类号： H01L45/146 , H01L27/2472 , H01L45/04 , H01L45/1253
摘要： A memristor (100) with a controlled electrode grain size includes an adhesion layer (112), a first electrode (102) having a first surface contacting the adhesion layer and a second surface opposite the first surface, in which the first electrode is formed of an alloy of a base material and at least one second material, and in which the alloy has a relatively smaller grain size than a grain size of the base material. The memristor (100) also includes a switching layer (110) positioned adjacent to the second surface of the first electrode and a second electrode (104) positioned adjacent to the switching layer.
摘要翻译：具有受控电极晶粒尺寸的忆阻器（100）包括粘合层（112），具有接触粘附层的第一表面的第一电极和与第一表面相对的第二表面的第一电极，其中第一电极由基材和至少一种第二材料的合金，并且其中合金具有比基材的晶粒尺寸更小的晶粒尺寸。忆阻器（100）还包括邻近第一电极的第二表面定位的开关层（110）和邻近开关层定位的第二电极（104）。

2. 发明申请

WO2011028210A1 SWITCHABLE JUNCTION WITH AN INTRINSIC DIODE FORMED WITH A VOLTAGE DEPENDENT RESISTOR 审中-公开
标题翻译：具有电压依赖电阻器形成的内部二极管的可切换连接
公开(公告)号：WO2011028210A1
公开(公告)日：2011-03-10
申请号：PCT/US2009/056061
申请日：2009-09-04
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , STRACHAN, John Paul , BORGHETTI, Julien , PICKETT, Matthew D.
发明人： YANG, Jianhua , STRACHAN, John Paul , BORGHETTI, Julien , PICKETT, Matthew D.
IPC分类号： H01L29/40 , H01L29/861 , H01L27/115
CPC分类号： H01L27/1021 , G11C13/0007 , G11C2213/12 , G11C2213/32 , G11C2213/34 , G11C2213/72 , G11C2213/73 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L29/8615 , H01L29/872 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： A switchable junction (600) having an intrinsic diode (634) formed with a voltage dependent resistor (640) is disclosed. The switchable junction comprises a first electrode (618), a second electrode (622), and a memristive matrix (620) configured to form an electrical interface (626) with the first electrode (618). The electrical interface has a programmable conductance. The voltage dependent resistor (640) is in electrical contact with the memristive matrix (620). The voltage dependent resistor is configured to form a rectifying diode interface (628) with the second electrode (622).
摘要翻译：公开了具有形成有电压依赖电阻器（640）的本征二极管（634）的可切换接点（600）。可切换接头包括第一电极（618），第二电极（622）和配置成与第一电极（618）形成电接口（626）的忆阻矩阵（620）。电气接口具有可编程电导。电压相关电阻器（640）与忆阻矩阵（620）电接触。电压相关电阻器被配置为与第二电极（622）形成整流二极管接口（628）。

3. 发明申请

WO2013162553A1 NONLINEAR MEMRISTORS 审中-公开
标题翻译：非线性仪器
公开(公告)号：WO2013162553A1
公开(公告)日：2013-10-31
申请号：PCT/US2012/035024
申请日：2012-04-25
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , ZHANG, Minxian Max , PICKETT, Matthew D. , WILLIAMS, R. Stanley
发明人： YANG, Jianhua , ZHANG, Minxian Max , PICKETT, Matthew D. , WILLIAMS, R. Stanley
IPC分类号： H01L27/105 , H01L21/8239
CPC分类号： H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/1608
摘要： A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material.
摘要翻译：非线性忆阻器包括在底部电极和顶部电极之间的底部电极，顶部电极和绝缘体层。绝缘体层包括金属氧化物。所述非线性忆阻器还包括在所述绝缘体层内从所述底部电极朝向所述顶部电极延伸的开关通道，以及在所述开关沟道和所述顶部电极之间的金属 - 绝缘体 - 过渡材料的纳米帽层。顶部电极包括与金属 - 绝缘体 - 过渡材料中的金属相同的金属。

4. 发明申请

WO2013062595A1 METAL-INSULATOR PHASE TRANSITION FLIP-FLOP 审中-公开
标题翻译：金属绝缘体相转移浮雕
公开(公告)号：WO2013062595A1
公开(公告)日：2013-05-02
申请号：PCT/US2011/058461
申请日：2011-10-28
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , RIBEIRO, Gilberto M. , PICKETT, Matthew D.
发明人： RIBEIRO, Gilberto M. , PICKETT, Matthew D.
IPC分类号： H03K3/356 , G11C19/00
CPC分类号： G11C11/419 , G11C11/41 , G11C13/0007 , G11C19/28 , G11C2013/0073 , G11C2213/15 , G11C2213/32 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L49/003 , H03K3/037 , H03K3/357 , H03K19/00315 , H03K19/1776
摘要： A metal-insulator phase transition (MIT) flip-flop employs a selected one of a pair of bi-stable operating states to represent a logic state of the MIT flip-flop. The MIT flip-flop includes an MIT device having a current-controlled negative differential resistance (CC-NDR) to provide the pair of bi-stable operating states. A bi-stable operating state of the pair is capable of being selected by a programing voltage. Once the bi-stable operating state is selected, the bi-stable operating state is capable of being maintained by a bias voltage applied to the MIT device.
摘要翻译：金属 - 绝缘体相变（MIT）触发器采用一对双稳态工作状态中选择的一个来表示MIT触发器的逻辑状态。 MIT触发器包括具有电流控制的负差分电阻（CC-NDR）的MIT装置，以提供一对双稳态操作状态。该对的双稳态工作状态能够通过编程电压进行选择。一旦选择了双稳态操作状态，双稳态操作状态就能够通过施加到MIT设备的偏压来保持。

5. 发明申请

WO2013066345A1 DECODER CIRCUITS HAVING METAL-INSULATOR-METAL THRESHOLD SWITCHES 审中-公开
标题翻译：具有金属绝缘体金属阈值开关的解码器电路
公开(公告)号：WO2013066345A1
公开(公告)日：2013-05-10
申请号：PCT/US2011/059341
申请日：2011-11-04
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , PICKETT, Matthew D. , RIBEIRO, Gilberto Medeiros
发明人： PICKETT, Matthew D. , RIBEIRO, Gilberto Medeiros
IPC分类号： G11C8/10
CPC分类号： G11C8/10 , H01L45/04 , H01L45/146
摘要： Decoder circuits having negative differential resistance (NDR) devices are described. In an example, a decoder circuit includes a plurality of input lines to receive select signals, a bias logic to provide a voltage bias, a plurality of output lines to provide output signals, and a plurality of metal-insulator-metal (MIM) threshold switches coupled to the plurality of input lines, the bias logic, and the plurality of output lines. Each of the plurality of MIM threshold switches operating as either a current-controlled positive or negative resistance to map an input logic state of the select signals to an output logic state of the output signals.
摘要翻译：描述具有负差分电阻（NDR）装置的解码器电路。在一个示例中，解码器电路包括多个用于接收选择信号的输入线，提供电压偏置的偏置逻辑，提供输出信号的多条输出线以及多个金属 - 绝缘体 - 金属（MIM）阈值耦合到多个输入线的开关，偏置逻辑和多个输出线。多个MIM阈值开关中的每一个作为电流控制的正或负电阻工作，将选择信号的输入逻辑状态映射到输出信号的输出逻辑状态。

6. 发明申请

WO2010082928A1 SILICON-BASED MEMRISTIVE DEVICE 审中-公开
标题翻译：基于硅的力学装置
公开(公告)号：WO2010082928A1
公开(公告)日：2010-07-22
申请号：PCT/US2009/031140
申请日：2009-01-15
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , PICKETT, Matthew D. , STEWART, Duncan
发明人： PICKETT, Matthew D. , STEWART, Duncan
IPC分类号： H01L27/115 , H01L21/8247 , H01L21/265
CPC分类号： H01L27/101 , G11C13/00 , G11C13/0069 , G11C2013/009 , G11C2213/33 , G11C2213/77 , H01L27/2463 , H01L45/085 , H01L45/1206 , H01L45/1233 , H01L45/148
摘要： A memristive device (100) includes a first and a second electrode (110, 115); a silicon memristive matrix (105) interposed between the first electrode (110) and the second electrode (115); and a mobile dopant species (210, 215) within the silicon memristive matrix (105) which moves in response to a programming electrical field and remains substantially in place after the removal of the programming electrical field. A method for using a crossbar architecture (610) containing a silicon memristive matrix (105) includes: applying a programming electrical field by applying a voltage bias across a first conductor (602) and a second conductor (604); a silicon memristive matrix (105, 606) containing mobile dopants (210, 215) being interposed between the first conductor (602) and the second conductor (604), the programming voltage repositioning the mobile dopants (210, 215) within the silicon memristive matrix (105, 606); and reading a state of the silicon memristive matrix (105, 606) by applying a reading energy across the silicon memristive matrix (105, 606), the reading energy producing a measurable indication of the state of the silicon memristive matrix (105, 606).
摘要翻译：忆阻器（100）包括第一和第二电极（110,115）; 插入在所述第一电极（110）和所述第二电极（115）之间的硅忆阻矩阵（105）; 以及在所述硅忆阻矩阵（105）内的移动掺杂剂物质（210,215），其响应于编程电场而移动并且在去除所述编程电场之后保持基本上就位。一种使用包含硅忆阻矩阵（105）的交叉结构（610）的方法包括：通过跨第一导体（602）和第二导体（604）施加电压偏置来施加编程电场; 包含位于第一导体（602）和第二导体（604）之间的移动掺杂剂（210,215）的硅忆阻矩阵（105,606），所述编程电压重新定位硅忆阻器内的移动掺杂剂（210,215）矩阵（105,606）; 以及通过在所述硅忆阻矩阵（105,606）上施加读取能量来读取所述硅忆阻矩阵（105,606）的状态，所述读取能量产生所述硅忆阻矩阵（105,606）的状态的可测量指示，。

7. 发明申请

WO2012054041A1 METAL-INSULATOR TRANSITION SWITCHING DEVICES 审中-公开
标题翻译：金属绝缘子过渡开关器件
公开(公告)号：WO2012054041A1
公开(公告)日：2012-04-26
申请号：PCT/US2010/053549
申请日：2010-10-21
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , PICKETT, Matthew D. , KUEKES, Philip J. , WILLIAMS, R. Stanley , PERNER, Frederick , WU, Wei , BRATKOVSKI, Alexandre M.
发明人： PICKETT, Matthew D. , KUEKES, Philip J. , WILLIAMS, R. Stanley , PERNER, Frederick , WU, Wei , BRATKOVSKI, Alexandre M.
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L47/02 , H01L47/005 , H01L49/003
摘要： A metal-insulator transition switching device (100) includes a first electrode (120) and a second electrode (125). A channel region (115) which includes a bulk metal-insulator transition material separates the first electrode (120) and the second electrode (125). A method for forming a metal-insulator transition switching device (200) includes depositing a layer of bulk metal-insulator transition material (245) in between a first electrode (220) and a second electrode (225) to form a channel region (115) and forming a gate electrode (210) operatively connected to the channel region (115).
摘要翻译：金属 - 绝缘体转变开关装置（100）包括第一电极（120）和第二电极（125）。包括体金属 - 绝缘体转移材料的沟道区域（115）将第一电极（120）和第二电极（125）分开。一种用于形成金属 - 绝缘体转变开关器件（200）的方法包括在第一电极（220）和第二电极（225）之间沉积体金属 - 绝缘体转变材料层（245）以形成沟道区域（115））并且形成可操作地连接到沟道区（115）的栅电极（210）。

8. 发明申请

WO2014018056A1 STORING MEMORY WITH NEGATIVE DIFFERENTIAL RESISTANCE MATERIAL 审中-公开
标题翻译：存储记忆与负面的差别电阻材料
公开(公告)号：WO2014018056A1
公开(公告)日：2014-01-30
申请号：PCT/US2012/048605
申请日：2012-07-27
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , PICKETT, Matthew D.
发明人： PICKETT, Matthew D.
IPC分类号： H01L27/10 , H01L27/108 , H01L21/8242 , H01L27/11 , H01L21/8246
CPC分类号： G11C11/39 , G11C11/40 , G11C13/0002 , G11C13/004 , G11C13/0069 , G11C2013/0045 , G11C2213/79 , G11C2213/82 , H01L27/1052 , H01L27/2436 , H01L27/26 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L47/00
摘要： A memory cell includes a transistor with a first source/drain terminal spaced apart from a second source/drain terminal with a semiconductor material; a gate terminal located proximate the semiconductor material such that an increase in a gate terminal voltage increases a conductivity of the semiconductor material; and the first source/drain terminal being connected in series to a negative differential resistance material.
摘要翻译：存储单元包括晶体管，其具有与具有半导体材料的第二源极/漏极端子间隔开的第一源极/漏极端子; 位于半导体材料附近的栅极端子，使得栅极端子电压的增加增加了半导体材料的导电性; 并且第一源极/漏极端子串联连接到负的差分电阻材料。

9. 发明申请

WO2013062559A1 SHIFTABLE MEMORY EMPLOYING RING REGISTERS 审中-公开
标题翻译：可移动存储器使用环形寄存器
公开(公告)号：WO2013062559A1
公开(公告)日：2013-05-02
申请号：PCT/US2011/058177
申请日：2011-10-27
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , PICKETT, Matthew D. , WILLIAMS, R. Stanley , RIBEIRO, Gilberto M.
发明人： PICKETT, Matthew D. , WILLIAMS, R. Stanley , RIBEIRO, Gilberto M.
IPC分类号： G11C19/00 , G11C7/10
CPC分类号： G06F5/08 , G11C7/1012 , G11C7/1036 , G11C19/00 , G11C19/28 , G11C21/00
摘要： Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted.
摘要翻译：可移动存储器使用振铃寄存器来移位存储在可移位存储器内的环形寄存器中的数据字的连续子集。可移位存储器包括具有内置字级移位能力的存储器。存储器包括多个用于存储数据字的环形寄存器。数据字的连续子集可在存储器内的第一位置到第二位置的多个环形寄存器的集合之间移位。数据字的连续子集具有小于存储器总大小的大小。当连续子集移位时，存储器仅移动存储在连续子集内的数据字。

10. 发明申请

WO2010087821A1 VOLTAGE-CONTROLLED SWITCHES 审中-公开
标题翻译：电压控制开关
公开(公告)号：WO2010087821A1
公开(公告)日：2010-08-05
申请号：PCT/US2009/032285
申请日：2009-01-28
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , BORGHETTI, Julien , PICKETT, Matthew D.
发明人： BORGHETTI, Julien , PICKETT, Matthew D.
IPC分类号： H03K19/173 , H03K19/177 , H01L29/41 , H01L29/417
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/16
摘要： A voltage-controlled switch (100) comprises a first electrode (10), a second electrode (20), a switching junction (30) situated between the first electrode and the second electrode, a conducting channel (60) extending from adjacent to the origin through the switching junction and having a channel end situated near the second electrode, and a layer of dopants (40) situated adjacent to an interface between the switching junction and the second electrode, wherein the dopants are capable of being activated to form switching centers (50).
摘要翻译：电压控制开关（100）包括位于第一电极和第二电极之间的第一电极（10），第二电极（20），开关结（30），从邻近的电极源极通过开关结并且具有位于第二电极附近的沟道端以及位于开关结和第二电极之间的界面附近的掺杂剂层（40），其中掺杂剂能够被激活以形成开关中心（50）。

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