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1. 发明申请

WO2011028208A1 MEMRISTORS BASED ON MIXED-METAL-VALENCE COMPOUNDS 审中-公开
标题翻译：基于混合金属化合物的成像仪
公开(公告)号：WO2011028208A1
公开(公告)日：2011-03-10
申请号：PCT/US2009/056022
申请日：2009-09-04
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WILLIAMS, R. Stanley , YANG, Jianhua , PICKETT, Matthew , RIBEIRO, Gilberto , STRACHAN, John Paul
发明人： WILLIAMS, R. Stanley , YANG, Jianhua , PICKETT, Matthew , RIBEIRO, Gilberto , STRACHAN, John Paul
IPC分类号： H01L29/40
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor (100, 100', 100") based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact with at least one layer (110, 110a, 110b) of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field (125). One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer (110a) of a fully oxidized phase and the other is in electrical contact with the layer (or other layer (110b)) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode (100') and an ON-switched diode (100") are also provided. A method of operating the memristor is further provided.
摘要翻译：基于混合金属化合物的忆阻器（100,100'，100“）包括：第一电极（115）;第二电极（120）;物理上的混合金属价态的层（105）与完全氧化相的至少一层（110,1 110a，110b）接触，混合金属价相基本上是完全氧化相的掺杂剂的凝结相，其在响应中漂入和流出完全氧化相第一和第二电极中的一个与混合金属价相的层或完全氧化相的层（110a）电接触，另一个与电接触与完全氧化相的层（或其他层（110b））形成。忆阻器通过以任何顺序形成混合金属价态相和完全氧化相的层而制备。还提供了可逆二极管（100'）和导通开关二极管（100“）。还提供了一种操作忆阻器的方法。

2. 发明申请

WO2011099961A1 MEMORY RESISTOR ADJUSTMENT USING FEEDBACK CONTROL 审中-公开
标题翻译：使用反馈控制的存储器电阻调整
公开(公告)号：WO2011099961A1
公开(公告)日：2011-08-18
申请号：PCT/US2010/023550
申请日：2010-02-09
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , STRACHAN, John , BORGHETTI, Julien , PICKETT, Matthew , RIBEIRO, Gilberto , YANG, Jianhua
发明人： STRACHAN, John , BORGHETTI, Julien , PICKETT, Matthew , RIBEIRO, Gilberto , YANG, Jianhua
IPC分类号： G11C8/00 , G11C13/00 , G11C16/00
CPC分类号： G11C11/5678 , G11C11/54 , G11C13/0007 , G11C13/0069 , G11C2013/0092
摘要： Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.
摘要翻译：提供了与存储电阻相关的装置和方法。反馈控制器将调整信号应用于忆阻器。在调节期间，反馈控制器感测到避震器的非易失性电阻。忆阻器被调整到具有最小过冲的第一和第二极限值之间的特定值。通过本发明实现了增加的忆阻器使用寿命，更快的操作，更低的功耗和更高的操作完整性。

3. 发明申请

WO2012011900A1 NANOSCALE SWITCHING DEVICE 审中-公开
标题翻译：纳米开关器件
公开(公告)号：WO2012011900A1
公开(公告)日：2012-01-26
申请号：PCT/US2010/042724
申请日：2010-07-21
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , PICKETT, Matthew , RIBEIRO, Gilberto
发明人： YANG, Jianhua , PICKETT, Matthew , RIBEIRO, Gilberto
IPC分类号： H01L29/12 , H01L29/40
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/146
摘要： A nanoscale switching device has an active region disposed between two electrodes of nanoscale widths. The active region contains a switching material that carries mobile ionic dopants capable of being transported over the active region under an electric field to change a resistive state of the device. The switching material further carries immobile ionic dopants for inhibiting clustering of the mobile ionic dopants caused by switching cycles of the device. The immobile ionic dopants have a charge opposite in polarity to the charge of the mobile ionic dopants, and are less mobile under the electric field than the mobile ion dopants.
摘要翻译：纳米级开关器件具有设置在纳米级宽度的两个电极之间的有源区域。有源区域包含交换材料，其携带能够在电场下在有源区域上传输的移动离子掺杂剂，以改变器件的电阻状态。开关材料还携带用于抑制由器件的开关周期引起的移动离子掺杂剂聚集的固定的离子掺杂剂。不可移动的离子掺杂剂具有与移动离子掺杂剂的电荷极性相反的电荷，并且在电场下的移动性低于移动离子掺杂剂。

4. 发明申请

WO2010082922A1 MEMRISTOR HAVING A TRIANGULAR SHAPED ELECTRODE 审中-公开
标题翻译：具有三角形形状电极的电容器
公开(公告)号：WO2010082922A1
公开(公告)日：2010-07-22
申请号：PCT/US2009/030827
申请日：2009-01-13
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , PICKETT, Matthew , BORGHETTI, Julien
发明人： PICKETT, Matthew , BORGHETTI, Julien
IPC分类号： H01L27/115 , H01L21/8247 , H01L29/06
CPC分类号： H01L45/08 , H01L27/2472 , H01L45/1233 , H01L45/1273 , H01L45/146
摘要： A memristor includes a first electrode having a triangular cross section, in which the first electrode has a tip and a base, a switching material positioned upon the first electrode, and a second electrode positioned upon the switching material. The tip of the first electrode faces the second electrode and an active region in the switching material is formed between the tip of the first electrode and the second electrode.
摘要翻译：忆阻器包括具有三角形横截面的第一电极，其中第一电极具有尖端和基部，位于第一电极上的开关材料和位于开关材料上的第二电极。第一电极的尖端面对第二电极，并且开关材料中的有源区形成在第一电极的尖端和第二电极之间。

5. 发明申请

WO2013089666A1 MEMRISTORS AND METHODS OF FABRICATION 审中-公开
标题翻译：制造方法和制造方法
公开(公告)号：WO2013089666A1
公开(公告)日：2013-06-20
申请号：PCT/US2011/064429
申请日：2011-12-12
申请人： HEWLETT PACKARD DEVELOPMENT COMPANY, L.P. , PICKETT, Matthew , NICKEL, Janice
发明人： PICKETT, Matthew , NICKEL, Janice
IPC分类号： H01L21/8247 , H01L27/115
CPC分类号： H01L45/1233 , H01L27/2463 , H01L28/24 , H01L45/04 , H01L45/146 , H01L45/1608 , H01L45/1633 , H01L45/1683
摘要： Memristors and their fabrication are provided. A first dielectric layer is formed over one or more conductive pathways. Vias are formed in the dielectric layer and filled with conductive material. A second dielectric layer is formed there over, and vias are formed aligned with and extending to the filled vias. A reactant fluid is introduced into the vias such that a reacted portion of the conductive material is defined within the filled vias. The vias in the second dielectric layer are then filled with conductive material such that memristors are defined. Conductive pathways are then formed over and in contact with the memristors such that each is individually addressable.
摘要翻译：提供忆阻器及其制造。在一个或多个导电路径上形成第一电介质层。在电介质层中形成通孔，并填充有导电材料。在其上形成第二电介质层，并且通孔形成为与填充的通孔对准并延伸到填充的通孔。将反应物流体引入到通孔中，使得在填充的通孔内限定导电材料的反应部分。然后用导电材料填充第二电介质层中的通孔，从而限定了忆阻器。导电路径然后形成在忆阻器之上并与忆阻器接触，使得每个可单独寻址。

6. 发明公开

EP2443657A1 MEMRISTORS BASED ON MIXED-METAL-VALENCE COMPOUNDS 审中-公开
标题翻译：基于混合金属价化合物的MEMRISTORS
公开(公告)号：EP2443657A1
公开(公告)日：2012-04-25
申请号：EP09849071.7
申请日：2009-09-04
申请人： Hewlett-Packard Development Company, L.P.
发明人： WILLIAMS, R. Stanley , YANG, Jianhua , PICKETT, Matthew , RIBEIRO, Gilberto , STRACHAN, John Paul
IPC分类号： H01L29/40
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor (100, 100', 100") based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact with at least one layer (110, 110a, 110b) of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field (125). One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer (110a) of a fully oxidized phase and the other is in electrical contact with the layer (or other layer (110b)) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode (100') and an ON-switched diode (100") are also provided. A method of operating the memristor is further provided.
摘要翻译：一种基于混合金属价化合物的忆阻器（100,100'，100“），包括：第一电极（115）;第二电极（120）;混合金属化合价相的层（105）与完全氧化相的至少一个层（110,110a，110b）接触，混合金属价相基本上是完全氧化相的掺杂剂的凝聚相，响应漂移进入和完全氧化相施加电场（125），第一和第二电极中的一个电极与混合金属价态层或完全氧化相的层（110a）电接触，另一个电接触与完全氧化相的层（或其它层（110b））一起形成忆阻器。忆阻器通过以任意顺序形成混合金属价相层和完全氧化相层，一个在另一个上。还提供可逆二极管（100'）和开关二极管（100“）。还提供了一种操作忆阻器的方法。

7. 发明公开

EP2791970A1 MEMRISTORS AND METHODS OF FABRICATION 审中-公开
标题翻译：忆阻器及其制造方法
公开(公告)号：EP2791970A1
公开(公告)日：2014-10-22
申请号：EP11877460.3
申请日：2011-12-12
申请人： Hewlett-Packard Development Company, L.P.
发明人： PICKETT, Matthew , NICKEL, Janice
IPC分类号： H01L21/8247 , H01L27/115
CPC分类号： H01L45/1233 , H01L27/2463 , H01L28/24 , H01L45/04 , H01L45/146 , H01L45/1608 , H01L45/1633 , H01L45/1683
摘要： Memristors and their fabrication are provided. A first dielectric layer is formed over one or more conductive pathways. Vias are formed in the dielectric layer and filled with conductive material. A second dielectric layer is formed there over, and vias are formed aligned with and extending to the filled vias. A reactant fluid is introduced into the vias such that a reacted portion of the conductive material is defined within the filled vias. The vias in the second dielectric layer are then filled with conductive material such that memristors are defined. Conductive pathways are then formed over and in contact with the memristors such that each is individually addressable.

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