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1. 发明申请

WO2011010988A1 NANOWIRE SENSOR WITH ANGLED SEGMENTS THAT ARE DIFFERENTLY FUNCTIONALIZED 审中-公开
标题翻译：具有不同功能的ANGED段的纳米传感器
公开(公告)号：WO2011010988A1
公开(公告)日：2011-01-27
申请号：PCT/US2009/051134
申请日：2009-07-20
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P , QUITORIANO, Nathaniel J. , KAMINS, Theodore I. , CHO, Hans S.
发明人： QUITORIANO, Nathaniel J. , KAMINS, Theodore I. , CHO, Hans S.
IPC分类号： B82B1/00 , B82B3/00
CPC分类号： B81B1/00 , B81B2201/0214
摘要： A nanowire device includes a nanowire 40 having differently functionalized segments 50, 51. Each of the segments 50, 51 is configured to interact with a species A, B to modulate the conductance of a segment 50, 51. The nanowire 40 is grown from a single catalyst 401 and the segments 50, 51 include a first segment 50 at a non-linear angle from a second segment 51.
摘要翻译：纳米线装置包括具有不同功能化片段50,51的纳米线40.片段50,51中的每一个被配置为与物质A，B相互作用以调节片段50,51的电导。纳米线40从单个催化剂401和段50,51包括与第二段51成非线性角度的第一段50。

2. 发明申请

WO2010085226A1 USING ALLOY ELECTRODES TO DOPE MEMRISTORS 审中-公开
标题翻译：使用合金电极去掺杂电容
公开(公告)号：WO2010085226A1
公开(公告)日：2010-07-29
申请号：PCT/US2009/000517
申请日：2009-01-26
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , QUITORIANO, Nathaniel, J. , OHLBERG, Douglas , KUEKES, Philip, J. , YANG, Jianhua
发明人： QUITORIANO, Nathaniel, J. , OHLBERG, Douglas , KUEKES, Philip, J. , YANG, Jianhua
IPC分类号： H01L21/265 , H01L29/40
CPC分类号： H01L27/1021 , B82Y10/00 , H01L21/26506 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149 , Y10S977/762
摘要： Various embodiments of the present invention are direct to nanoscale, reconfigurable, memristor devices. In one aspect, a memristor device comprises an electrode (301,303) and an alloy electrode (502,602). The device also includes an active region (510,610) sandwiched between the electrode and the alloy electrode. The alloy electrode forms dopants in a sub-region of the active region adjacent to the alloy electrode. The active region can be operated by selectively positioning the dopants within the active region to control the flow of charge carriers between the electrode and the alloy electrode.
摘要翻译：本发明的各种实施例直接涉及纳米级，可重构的忆阻器装置。一方面，忆阻器件包括电极（301,303）和合金电极（502,602）。该装置还包括夹在电极和合金电极之间的有源区（510,610）。合金电极在与合金电极相邻的有源区的子区域中形成掺杂剂。可以通过有选择地将掺杂剂定位在有源区域内来控制有源区，以控制电极和合金电极之间的载流子的流动。

3. 发明申请

WO2009017604A1 PLASMON-ENHANCED ELECTROMAGNETIC-RADIATION-EMITTING DEVICES AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：等离子体增强电磁辐射发射装置及其制造方法
公开(公告)号：WO2009017604A1
公开(公告)日：2009-02-05
申请号：PCT/US2008/008716
申请日：2008-07-16
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. , FATTAL, David , QUITORIANO, Nathaniel J, , CHO, Hans , FIORENTINO, Marco , KAMINS, Theodore I
发明人： FATTAL, David , QUITORIANO, Nathaniel J, , CHO, Hans , FIORENTINO, Marco , KAMINS, Theodore I
IPC分类号： G01N21/27
CPC分类号： H01L33/20 , H01L33/18 , H01L33/24 , H01L33/382
摘要： Various embodiments of the present invention are directed to surface-plasmon-enhanced electromagnetic-radiation-emitting devices and to methods of fabricating these devices. In one embodiment of the present invention, an electromagnetic-radiation-emitting device (100) comprises a multilayer core (106), a metallic device layer (108), and a substrate (104). The multilayer core (106) has an inner layer (110) and an outer layer (112), wherein the outer layer is configured to surround at least a portion of the inner layer. The metallic device layer (108) is configured to surround at least a portion of the outer layer. The substrate (104) has a bottom conducting layer (118) in electrical communication with the inner layer (110) and a top conducting layer (122) in electrical communication with the metallic device layer (108) such that the exposed portion emits surface-plasmon-enhanced electromagnetic radiation when an appropriate voltage is applied between the bottom conducting layer and the top conducting layer.
摘要翻译：本发明的各种实施例涉及表面等离子体增强的电磁辐射发射装置以及制造这些装置的方法。在本发明的一个实施例中，电磁辐射发射装置（100）包括多层芯（106），金属器件层（108）和衬底（104）。多层芯（106）具有内层（110）和外层（112），其中外层被构造成围绕内层的至少一部分。金属器件层（108）被配置为围绕外层的至少一部分。衬底（104）具有与内层（110）电连通的底部导电层（118）和与金属器件层（108）电连通的顶部导电层（122），使得暴露部分发射表面 - 当在底部导电层和顶部导电层之间施加适当的电压时，等离子体增强的电磁辐射。

4. 发明申请

WO2010087837A1 NANOSCALE APPARATUS AND SENSOR WITH NANOSHELL AND METHOD OF MAKING SAME 审中-公开
标题翻译：纳米壳的纳米尺度装置和传感器及其制造方法
公开(公告)号：WO2010087837A1
公开(公告)日：2010-08-05
申请号：PCT/US2009/032498
申请日：2009-01-29
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY , QUITORIANO, Nathaniel J. , KAMINS, Theodore I.
发明人： QUITORIANO, Nathaniel J. , KAMINS, Theodore I.
IPC分类号： B82B3/00
CPC分类号： B81C1/0015 , B81B2203/0118 , B81B2203/0361
摘要： A nanoscale apparatus (100) includes a nanoshell (110) extending from a substrate (102) and an epitaxial connection (120) between the substrate and an end (112) of the nanoshell adjacent to the substrate. A nanoscale sensor (200) includes surfaces (204, 206) extending relatively perpendicular to each other, a nanoshell (210) extending from one of the surfaces, and a detector (220) that monitors motion of the nanoshell relative to another of the surfaces spaced from the nanoshell by a gap (208). A method (300) of making a nanoscale apparatus includes growing (310) a nanowire on a surface; forming (320) a core-shell composite nanostructure; exposing (330) an end of the nanowire opposite to the surface with a FIB; and removing (340) the nanowire core from the exposed end, such that a nanoshell having a hollow region is attached to the surface. A material of the nanoshell (110, 210) excludes sp 2 -bonded carbon materials.
摘要翻译：纳米级装置（100）包括从衬底（102）延伸的纳米壳（110）和衬底之间的外延连接（120）和与衬底相邻的纳米壳的端部（112）。纳米尺度传感器（200）包括彼此相对垂直延伸的表面（204,206），从其中一个表面延伸的纳米壳（210）以及监测纳米壳相对于另一个表面的运动的检测器（220）与纳米壳间隔开间隙（208）。制造纳米级装置的方法（300）包括在表面上生长（310）纳米线; 形成（320）核 - 壳复合纳米结构; 用FIB将（330）与该表面相对的纳米线的一端暴露（330）以及从所述暴露端去除（340）所述纳米线芯，使得具有中空区域的纳米壳附接到所述表面。纳米壳（110,210）的材料不包括sp2结合的碳材料。

5. 发明申请

WO2010085241A1 MULTILAYER MEMRISTIVE DEVICES 审中-公开
标题翻译：多层复合器件
公开(公告)号：WO2010085241A1
公开(公告)日：2010-07-29
申请号：PCT/US2009/031458
申请日：2009-01-20
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , TONG, William M. , QUITORIANO, Nathaniel J. , STEWART, Duncan , KUEKES, Philip J.
发明人： TONG, William M. , QUITORIANO, Nathaniel J. , STEWART, Duncan , KUEKES, Philip J.
IPC分类号： H01L27/115 , H01L21/8247 , H01L21/265
CPC分类号： H01L21/26586 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/165
摘要： A multilayer memristive device includes a first electrode (410); a second electrode (405); a first memristive region (430) and a second memristive region (435) which created by directional ion implantation of dopant ions (420, 425) and are interposed between the first electrode (410) and the second electrode (405); and mobile dopants (315) which move within the first memristive region (430) and the second memristive region (435) in response to an applied electrical field.
摘要翻译：多层回忆装置包括第一电极（410）; 第二电极（405）; 通过定向离子注入掺杂剂离子（420,425）而形成的第一忆阻区（430）和第二忆阻区（435），并置于第一电极（410）和第二电极（405）之间; 以及响应于施加的电场在第一忆阻区（430）和第二忆阻区（435）内移动的移动掺杂剂（315）。

6. 发明申请

WO2010068221A1 MEMRISTIVE DEVICE 审中-公开
标题翻译：测量装置
公开(公告)号：WO2010068221A1
公开(公告)日：2010-06-17
申请号：PCT/US2008/086667
申请日：2008-12-12
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WU, Wei , STRACHAN, John Paul , WILLIAMS, R. Stanley , FIORENTINO, Marco , WANG, Shih-yuan , QUITORIANO, Nathaniel J. , CHO, Hans S. , BORGHETTI, Julien , MATHAI, Sagi Varghese
发明人： WU, Wei , STRACHAN, John Paul , WILLIAMS, R. Stanley , FIORENTINO, Marco , WANG, Shih-yuan , QUITORIANO, Nathaniel J. , CHO, Hans S. , BORGHETTI, Julien , MATHAI, Sagi Varghese
IPC分类号： H01L21/265 , G11C16/00 , G11C16/02
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device (200) includes a memristive matrix (240), mobile dopants (255) moving with the memristive matrix (240) in response to programming electrical fields and remaining stable within the memristive matrix (240) in the absence of the programming electrical fields; and at least three electrodes (210, 220, 230) surrounding the memristive matrix (240). A method for tuning electrical circuits with a memristive device (900) includes measuring a circuit characteristic (805) and applying a programming voltage to the memristive device (900) which causes motion of dopants within the memristive device (900) to alter the circuit characteristic (805). A method for increasing a switching speed of a memristive device (1300) includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions (1380, 1390) and then switching the memristive device (1300) to a conductive state by applying a programming voltage which rapidly merges the two conductive regions (1380, 1390) to form a conductive pathway between a source electrode (1310) and a drain electrode (1320).
摘要翻译：忆阻路由设备（200）包括忆阻矩阵（240），移动掺杂物（255）响应于编程电场而与忆阻矩阵（240）一起移动，并且在没有编程的情况下保持稳定在忆阻矩阵（240）内电场; 以及围绕所述忆阻矩阵（240）的至少三个电极（210,220,230）。一种利用忆阻器件（900）来调谐电路的方法包括测量电路特性（805）并将编程电压施加到忆阻器件（900），其使得忆阻器件（900）内的掺杂剂的运动改变电路特性（805）。提高忆阻装置（1300）的切换速度的方法包括将来自两个几何分离的位置的掺杂剂绘制成紧邻形成两个导电区域（1380,1390），然后通过应用将所述忆阻装置（1300）切换到导电状态编程电压，其迅速地合并两个导电区域（1380,1390）以在源电极（1310）和漏电极（1320）之间形成导电通路。

7. 发明申请

WO2009011878A2 OPTICAL DEVICE INCLUDING WAVEGUIDE GRATING STRUCTURE 审中-公开
标题翻译：包括波导光栅结构的光学器件
公开(公告)号：WO2009011878A2
公开(公告)日：2009-01-22
申请号：PCT/US2008008715
申请日：2008-07-16
申请人： HEWLETT PACKARD DEVELOPMENT CO , WU WEI , FATTAL DAVID , SANTORI CHARLES , BICKNELL ROBERT N , WANG SHIH-YUAN , WILLIAMS R STANLEY , QUITORIANO NATHANIEL J
发明人： WU WEI , FATTAL DAVID , SANTORI CHARLES , BICKNELL ROBERT N , WANG SHIH-YUAN , WILLIAMS R STANLEY , QUITORIANO NATHANIEL J
IPC分类号： G02B6/34
CPC分类号： G02B6/12007 , G02B6/124 , G02F1/0126 , G02F1/3515 , G02F2201/307
摘要： Optical devices (100) including waveguide grating structures (102) are described. In accordance with one embodiment, an optical device (100) is provided comprising a horizontal waveguide grating structure (102) having at least one waveguiding layer (104) and at least one subwavelength periodic grating layer (106). The optical device (100) further comprises upper and lower cladding layers (108, 110) immediately adjoining respective upper and lower surfaces (209, 205) of the waveguide grating structure and having refractive indices lower than a lowest-index one of the waveguiding layers, incident radiation propagating (IN) through one of the upper and lower cladding layers (108, 110) toward the waveguide grating structure. The waveguide grating structure (102) is configured for peak reflection of the incident radiation at a peak reflection frequency. A cumulative thickness of the waveguiding layers (104) is less than one tenth of a free space wavelength of the incident radiation at the peak reflection frequency divided by an average refractive index of the waveguiding layers.
摘要翻译：描述了包括波导光栅结构（102）的光学器件（100）。根据一个实施例，提供了一种光学器件（100），其包括具有至少一个波导层（104）和至少一个亚波长周期光栅层（106）的水平波导光栅结构（102）。光学器件（100）还包括紧邻波导光栅结构的相应上表面和下表面（209,205）的上和下包层（108,110），其折射率低于波导层中的最低折射率通过上包层和下包覆层（108,110）中的一个朝向波导光栅结构传播的入射辐射（IN）。波导光栅结构（102）被配置为以峰值反射频率对入射辐射进行峰值反射。波导层（104）的累积厚度小于峰值反射频率处入射的辐射的自由空间波长除以波导层的平均折射率的十分之一。

8. 发明申请

WO2008088720A1 CAPACITIVELY COUPLING LAYERS OF A MULTILAYER DEVICE 审中-公开
标题翻译：多层设备的电容耦合层
公开(公告)号：WO2008088720A1
公开(公告)日：2008-07-24
申请号：PCT/US2008/000367
申请日：2008-01-10
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , KAMINS, Theodore, I. , STEWART, Duncan , QUITORIANO, Nathaniel, J.
发明人： KAMINS, Theodore, I. , STEWART, Duncan , QUITORIANO, Nathaniel, J.
IPC分类号： H05K3/46
CPC分类号： H01L31/02002 , G02B6/43 , H01L2924/0002 , H01L2924/00
摘要： A multilayer device (100, 200, 300, 400, 500) includes an electronic device layer (104, 204, 304, 404, 504) a first electrode (110, 210, 410, 510) associated witht electronic layer (104, 204, 304, 404, 504), an optical layer (108, 208, 308, 408, 508), a second electrode (112, 212, 412, 512) associated with the optical layer (108, 208, 308, 408, 508), and an insulator layer (106, 206, 306, 406, 506) provided between the first and second electrodes. The first and second electrodes are capacitively coupled to each other to faciliate electrical communication between the electronic device layer (104, 204, 304, 404, 504) and the optical layer (108, 208, 308, 408, 508) through transmission of an electrical signal between the first and second electrodes. The electrical signal may be transmiited through the insulator layer (106, 206, 306, 406, 506). In additional, the electronic device layer (104, 204, 304, 404, 504 and the optical layer (108, 208, 308, 408, 508) may be in electrical communication with each other through capacitive coupling of the first electrode (110, 210, 410, 510) and the second electrode (112, 212, 412, 512).
摘要翻译：多层器件（100,200,300,400,500）包括与电子层（104,204）相关联的第一电极（110,210,410,510）的电子器件层（104,204,304,404,504），304,404,504），光学层（108,208,308,408,508），与所述光学层（108,208,308,408,508）508相关联的第二电极（112,212,412,512））和设置在第一和第二电极之间的绝缘体层（106,206,306,406,506）。第一和第二电极彼此电容耦合以通过传输电子装置层（104,204,304,504）和光学层（108,208,308,408,508）之间的电通信来促进电子设备层第一和第二电极之间的电信号。电信号可以透过绝缘体层（106,206,306,406,506）传输。另外，电子器件层（104,204,304,404,504）和光学层（108,208,308,408,508）可以通过第一电极（110,104）的电容耦合而彼此电连通， 210,410,510）和所述第二电极（112,212,412,512）。

9. 发明申请

WO2010126519A1 PHOTONIC DEVICE AND METHOD OF MAKING SAME 审中-公开
标题翻译：光电装置及其制造方法
公开(公告)号：WO2010126519A1
公开(公告)日：2010-11-04
申请号：PCT/US2009/042403
申请日：2009-04-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY , CHO, Hans, S. , KAMINS, Theodore, I. , QUITORIANO, Nathaniel, J.
发明人： CHO, Hans, S. , KAMINS, Theodore, I. , QUITORIANO, Nathaniel, J.
IPC分类号： H01L31/04 , H01L31/042
CPC分类号： H01L31/182 , H01L31/0352 , Y02E10/546 , Y02P70/521
摘要： A photonic device (200) and method (100) of making the photonic device (200) employs preferential etching of grain boundaries of a polycrystalline semiconductor material layer (210). The method (100) includes growing (110) the polycrystalline layer (210) on a substrate (201). The polycrystalline layer includes a transition region (212) of variously oriented grains and a region (214) of columnar grain boundaries (215) adjacent to the transition region. The method further includes preferentially etching (120) the columnar grain boundaries to provide tapered structures (220) of the semiconductor material that are continuous (217) with respective aligned grains (213) of the transition region. The tapered structures are predominantly single crystal. The method further includes forming (140) a conformal semiconductor junction (240) on the tapered structures and providing (160) first and second electrodes. The first electrode (201, 262) is adjacent to the transition region and the second electrode (260) is adjacent to a surface layer of the conformal semiconductor junction.
摘要翻译：制造光子器件（200）的光子器件（200）和方法（100）采用对多晶半导体材料层（210）的晶界的优先蚀刻。方法（100）包括在衬底（201）上生长（110）多晶层（210）。多晶层包括不同取向晶粒的过渡区域（212）和与过渡区域相邻的柱状晶界（215）的区域（214）。该方法还包括优先蚀刻（120）柱状晶界以提供与过渡区域的相应对准晶粒（213）连续（217）的半导体材料的锥形结构（220）。锥形结构主要是单晶。该方法还包括在锥形结构上形成（140）共形半导体结（240）并提供（160）第一和第二电极。第一电极（201,262）与过渡区域相邻，第二电极（260）与保形半导体结的表面层相邻。

10. 发明申请

WO2010120298A1 THERMOELECTRIC DEVICE HAVING A VARIABLE CROSS-SECTION CONNECTING STRUCTURE 审中-公开
标题翻译：具有可变交叉部分连接结构的热电装置
公开(公告)号：WO2010120298A1
公开(公告)日：2010-10-21
申请号：PCT/US2009/040690
申请日：2009-04-15
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P , KUEKES, Philip, J. , BRATKOVSKI, Alexandre, M. , CHO, Hans, S. , QUITORIANO, Nathaniel, J. , KAMINS, Theodore, I. , WILLIAMS, R, Stanley
发明人： KUEKES, Philip, J. , BRATKOVSKI, Alexandre, M. , CHO, Hans, S. , QUITORIANO, Nathaniel, J. , KAMINS, Theodore, I. , WILLIAMS, R, Stanley
IPC分类号： H01L35/04 , H01L35/28
CPC分类号： H01L35/32
摘要： A thermoelectric device having a variable cross-section connecting structure includes a first electrode, a second electrode, and a connecting structure connecting the first electrode and the second electrode. The connecting structure has a first section and a second section. The width of the second section is greater than the width of the first section, and the width of the first section is less than a width that is approximately equivalent to a phonon mean free path through the first section.
摘要翻译：具有可变横截面连接结构的热电装置包括第一电极，第二电极和连接第一电极和第二电极的连接结构。连接结构具有第一部分和第二部分。第二部分的宽度大于第一部分的宽度，并且第一部分的宽度小于大致等于通过第一部分的声子平均自由程的宽度。

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