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1. 发明授权

US07736838B2 Methods for forming pattern using electron beam and cell masks used in electron beam lithography 有权
标题翻译：在电子束光刻中使用的电子束和细胞掩模形成图案的方法
公开(公告)号：US07736838B2
公开(公告)日：2010-06-15
申请号：US11590878
申请日：2006-11-01
申请人： Hee-Bom Kim , Seong-Woon Choi
发明人： Hee-Bom Kim , Seong-Woon Choi
IPC分类号： G03C5/00
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/78 , H01J37/3174 , Y10S430/143
摘要： Provided methods for forming a pattern using electron beam and cell masks for electron beam lithography. The methods may include forming a resist layer on a substrate, the resist layer including a first region, a second region surrounding the first region, and a third region surrounding the second region. The second may be irradiated with electron beam at a first dose, and the third region may be irradiated with an electron beam at a second dose less than the first dose. The cell mask may include a mask substrate and a shielding region disposed on the mask substrate. A transmitting region may extend a distance from the shielding region. A gray pattern region may be disposed around the transmitting region. The gray pattern region may include patterns having a pitch smaller than a resolution limit.
摘要翻译：提供了使用电子束形成图案的方法和用于电子束光刻的单元掩模。所述方法可以包括在衬底上形成抗蚀剂层，抗蚀剂层包括第一区域，围绕第一区域的第二区域和围绕第二区域的第三区域。可以以第一剂量用电子束照射第二区域，并且可以以小于第一剂量的第二剂量用电子束照射第三区域。细胞掩模可以包括掩模基板和设置在掩模基板上的屏蔽区域。透射区域可以从屏蔽区域延伸一段距离。灰色图案区域可以设置在发送区域周围。灰色图案区域可以包括具有小于分辨率限制的间距的图案。

2. 发明申请

US20070166646A1 Methods for forming pattern using electron beam and cell masks used in electron beam lithography 有权
标题翻译：在电子束光刻中使用的电子束和细胞掩模形成图案的方法
公开(公告)号：US20070166646A1
公开(公告)日：2007-07-19
申请号：US11590878
申请日：2006-11-01
申请人： Hee-Bom Kim , Seong-Woon Choi
发明人： Hee-Bom Kim , Seong-Woon Choi
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/78 , H01J37/3174 , Y10S430/143
摘要： Provided methods for forming a pattern using electron beam and cell masks for electron beam lithography. The methods may include forming a resist layer on a substrate, the resist layer including a first region, a second region surrounding the first region, and a third region surrounding the second region. The second may be irradiated with electron beam at a first dose, and the third region may be irradiated with an electron beam at a second dose less than the first dose. The cell mask may include a mask substrate and a shielding region disposed on the mask substrate. A transmitting region may extend a distance from the shielding region. A gray pattern region may be disposed around the transmitting region. The gray pattern region may include patterns having a pitch smaller than a resolution limit.
摘要翻译：提供了使用电子束形成图案的方法和用于电子束光刻的单元掩模。所述方法可以包括在衬底上形成抗蚀剂层，抗蚀剂层包括第一区域，围绕第一区域的第二区域和围绕第二区域的第三区域。可以以第一剂量用电子束照射第二区域，并且可以以小于第一剂量的第二剂量用电子束照射第三区域。细胞掩模可以包括掩模基板和设置在掩模基板上的屏蔽区域。透射区域可以从屏蔽区域延伸一段距离。灰色图案区域可以设置在发送区域周围。灰色图案区域可以包括具有小于分辨率限制的间距的图案。

3. 发明申请

US20070111112A1 Systems and methods for fabricating photo masks 审中-公开
标题翻译：制造光罩的系统和方法
公开(公告)号：US20070111112A1
公开(公告)日：2007-05-17
申请号：US11598754
申请日：2006-11-14
申请人： Sung-Min Huh , Hee-Bom Kim , Seong-Woon Choi
发明人： Sung-Min Huh , Hee-Bom Kim , Seong-Woon Choi
IPC分类号： G03F1/00
CPC分类号： G03F1/84
摘要： A system and method for fabricating a photo mask are provided. The method includes preparing weak point data based on mask layout data, fabricating a photo mask based on the mask layout data and extracting critical point data by analyzing the aerial image of the fabricated photo mask based on the weak point data.
摘要翻译：提供了一种用于制造光罩的系统和方法。该方法包括基于掩模布局数据制作弱点数据，基于掩模布局数据制造光掩模，并且通过基于弱点数据分析所制造的光掩膜的空间图像来提取临界点数据。

4. 发明申请

US20130143150A1 METHOD FOR MANUFACTURING PHOTOMASK AND PHOTOMASK MANUFACTURED USING THE SAME 有权
标题翻译：使用其制造光电子和光电子的方法
公开(公告)号：US20130143150A1
公开(公告)日：2013-06-06
申请号：US13571043
申请日：2012-08-09
申请人： JIN CHOI , Byung-Gook Kim , Hee-Bom Kim , Sang-Hee Lee
发明人： JIN CHOI , Byung-Gook Kim , Hee-Bom Kim , Sang-Hee Lee
IPC分类号： G03F1/44
CPC分类号： G03F1/44
摘要： A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.
摘要翻译：光掩模的制造方法包括在基板上形成光致抗蚀剂膜，在光致抗蚀剂膜上形成缺陷检测图案。缺陷检测图案具有沿第一方向延伸的第一图案和与第一图案的一端重叠的第二图案，并且在与第一方向不同的第二方向上延伸。使用由同一放大器衍射的电子束（e-beam）形成第一图案和第二图案。

5. 发明申请

US20100266959A1 Pattern forming method 审中-公开
标题翻译：图案形成方法
公开(公告)号：US20100266959A1
公开(公告)日：2010-10-21
申请号：US12662402
申请日：2010-04-15
申请人： Sang-Hee Lee , Jin Choi , Byung-Gook Kim , Hee-Bom Kim
发明人： Sang-Hee Lee , Jin Choi , Byung-Gook Kim , Hee-Bom Kim
IPC分类号： G03F7/20
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/78 , H01J37/3174 , H01J2237/0451 , H01J2237/0458 , H01J2237/15 , H01J2237/31771 , H01J2237/31776
摘要： A pattern forming method includes providing a resist, irradiating a first electron beam to a first region of the resist, and irradiating a second electron beam to a second region which is defined along a boundary of the first region of the resist, wherein the first electron beam has a first cross section having a polygonal shape, and the second electron beam has a second cross section having a polygonal shape.
摘要翻译：图案形成方法包括提供抗蚀剂，将第一电子束照射到抗蚀剂的第一区域，并且将第二电子束照射到沿着抗蚀剂的第一区域的边界限定的第二区域，其中第一电子梁具有具有多边形形状的第一横截面，并且第二电子束具有具有多边形形状的第二横截面。

6. 发明申请

US20100111427A1 Method for Inspecting Critical Dimension Uniformity at High Speed Measurement 有权
标题翻译：检测高速测量中临界尺寸均匀性的方法
公开(公告)号：US20100111427A1
公开(公告)日：2010-05-06
申请号：US12607238
申请日：2009-10-28
申请人： Hee-Bom Kim , Myoung-Soo Lee , Young-Su Sung
发明人： Hee-Bom Kim , Myoung-Soo Lee , Young-Su Sung
IPC分类号： G06K9/68
CPC分类号： G06T7/0006 , G03F1/86 , G03F7/70625 , G06T2207/30148
摘要： A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.
摘要翻译：用于检查光掩模图案的CD（CD）的均匀性的方法提高了产量。该方法通过使用电子显微镜精确测量光掩模来获得CD。然后，通过光学显微镜高速拍摄光掩模，获得具有形成在光掩模中的多个图案的测量图像。当测量图像的开放密度相对较低时，通过仅捕获测量图像中的图案区域来计算基于CD的灰度级，并且获得估计值和相关系数。因此，对于具有较低开放密度的测量图像的高速测量，可以更清楚地确认CD的均匀性。

7. 发明授权

US07745068B2 Binary photomask having a compensation layer 失效
标题翻译：具有补偿层的二进制光掩模
公开(公告)号：US07745068B2
公开(公告)日：2010-06-29
申请号：US11446980
申请日：2006-06-06
申请人： Jin-Sik Jung , Hee-Bom Kim , Woo-Sung Han , Sung-Min Huh
发明人： Jin-Sik Jung , Hee-Bom Kim , Woo-Sung Han , Sung-Min Huh
IPC分类号： G03F1/14
CPC分类号： G03F1/29
摘要： A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on a topology of the compensation layer and arranged on the transmission-prevention layer and/or the substrate.
摘要翻译：提供了具有改进的分辨率的二进制光掩模及其制造方法。二元光掩模可以包括基板，形成在基板上以限定电路图案的传输防止图案，以及补偿层，其被配置为基于补偿层的拓扑来改变透射二进制光掩模的光，并布置在透射 - 防止层和/或基板。

8. 发明申请

US20080145771A1 Phase-shift mask and method of forming the same 失效
标题翻译：相移掩模及其形成方法
公开(公告)号：US20080145771A1
公开(公告)日：2008-06-19
申请号：US12002275
申请日：2007-12-13
申请人： Gi-Sung Yoon , Hee-Bom Kim , Sun-Young Choi
发明人： Gi-Sung Yoon , Hee-Bom Kim , Sun-Young Choi
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/54 , G03F1/68 , G03F1/80
摘要： In an attenuated phase-shift mask (PSM) and a method of forming the same, a phase-shift layer and a light-shielding layer are sequentially stacked on a transparent substrate. The phase-shift layer and the light-shielding layer are sequentially removed from the substrate, to form a light-shielding pattern including a first opening and a phase-shift pattern including a second opening that is connected to the first opening and partially exposes the transparent substrate. Then, a transmitting portion is formed through the light-shielding pattern by partially removing the light-shielding pattern. The transmitting portion includes at least one portion of the phase-shift pattern on which a transmittance controller is formed. In one embodiment, the transmittance controller comprises a metal having a high absorption coefficient, and is formed through sputtering and diffusion processes. Accordingly, the intensity deviation between 0th and 1st order beams may be decreased, to thereby improve the processing margin of the exposure process.
摘要翻译：在衰减相移掩模（PSM）及其形成方法中，相移层和遮光层依次层叠在透明基板上。从基板顺序地移除相移层和遮光层，以形成包括第一开口和相移图案的遮光图案，该图案包括连接到第一开口的第二开口，并且部分地曝光透明基板。然后，通过部分去除遮光图案，通过遮光图案形成发送部。发射部分包括形成有透射率控制器的相移图案的至少一部分。在一个实施例中，透射率控制器包括具有高吸收系数的金属，并且通过溅射和扩散工艺形成。因此，可以减小第0和第1级次级光束之间的强度偏差，从而改善曝光处理的处理余量。

9. 发明申请

US20070125948A1 Method of measuring a critical dimension of a semiconductor device and a related apparatus 失效
标题翻译：测量半导体器件和相关器件的临界尺寸的方法
公开(公告)号：US20070125948A1
公开(公告)日：2007-06-07
申请号：US11434142
申请日：2006-05-16
申请人： Yo-Han Choi , Hee-Bom Kim
发明人： Yo-Han Choi , Hee-Bom Kim
IPC分类号： G21K7/00
CPC分类号： H01J37/265 , H01J37/222 , H01J2237/221 , H01J2237/24578 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817
摘要： A method and apparatus for measuring a critical dimension (CD) are provided. Image data of a measurement pattern are generated. The measurement pattern may include a first surface and a second surface facing each other. The image data may include a first side and a second side corresponding to the first surface and the second surface of the measurement pattern, respectively. The image data may be edited to increase an overlap length of the first and second sides. A measurement window crossing the first and second sides in the edited image data is set. A distance between the first and second sides in the measurement window is measured.
摘要翻译：提供了一种用于测量临界尺寸（CD）的方法和装置。产生测量图案的图像数据。测量图案可以包括彼此面对的第一表面和第二表面。图像数据可以分别包括对应于测量图案的第一表面和第二表面的第一侧和第二侧。可以编辑图像数据以增加第一和第二侧的重叠长度。设置与编辑图像数据中的第一和第二边交叉的测量窗口。测量测量窗口中的第一和第二侧之间的距离。

10. 发明授权

US08673522B2 Method for manufacturing photomask and photomask manufactured using the same 有权
标题翻译：制造使用其制造光掩模和光掩模的方法
公开(公告)号：US08673522B2
公开(公告)日：2014-03-18
申请号：US13571043
申请日：2012-08-09
申请人： Jin Choi , Byung-Gook Kim , Hee-Bom Kim , Sang-Hee Lee
发明人： Jin Choi , Byung-Gook Kim , Hee-Bom Kim , Sang-Hee Lee
IPC分类号： G03F1/38
CPC分类号： G03F1/44
摘要： A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.
摘要翻译：光掩模的制造方法包括在基板上形成光致抗蚀剂膜，在光致抗蚀剂膜上形成缺陷检测图案。缺陷检测图案具有沿第一方向延伸的第一图案和与第一图案的一端重叠的第二图案，并且在与第一方向不同的第二方向上延伸。使用由同一放大器衍射的电子束（e-beam）形成第一图案和第二图案。

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