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1. 发明授权

US07601467B2 Method of manufacturing EUVL alternating phase-shift mask 有权
标题翻译：制造EUVL交替相移掩模的方法
公开(公告)号：US07601467B2
公开(公告)日：2009-10-13
申请号：US11367438
申请日：2006-03-06
申请人： Sung-min Huh , Hee-bom Kim , Seong-woon Choi , Dong-wan Kim , Chan-uk Jeon
发明人： Sung-min Huh , Hee-bom Kim , Seong-woon Choi , Dong-wan Kim , Chan-uk Jeon
IPC分类号： G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/30
摘要： A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.
摘要翻译：制造极紫外光刻（EUVL）交替相移掩模的方法包括制备具有反射层的基板，在反射层上形成遮光层图案以覆盖反射层的一部分，同时留下反射区域的反射层，通过蚀刻反射层在反射层的相移区域中形成沟槽，并且改变反射区域的非相移区域的物理结构，以降低其相对于极端的超反射区域的反射率（EUV）灯。

2. 发明申请

US20080088810A1 EUV exposure apparatus for in-situ exposing of substrate and cleaning of optical element included apparatus and method of cleaning optical element included in apparatus 审中-公开
标题翻译：用于原位暴露基板的EUV曝光装置和包括在设备中的光学元件的清洁装置和清洁光学元件的方法
公开(公告)号：US20080088810A1
公开(公告)日：2008-04-17
申请号：US11820468
申请日：2007-06-19
申请人： Sung-min Huh , Dong-gun Lee
发明人： Sung-min Huh , Dong-gun Lee
IPC分类号： G03B27/54
CPC分类号： G03F7/70925
摘要： Provided are an extreme ultraviolet (EUV) exposure apparatus and a method of cleaning optical elements included in the exposure apparatus. The EUV exposure apparatus includes: a light source system generating an exposure beam that comprises an EUV beam during exposure of a substrate and generating a cleaning beam having a longer wavelength than the exposure beam during cleaning of an optical element; an optical system adjusting and patterning the EUV beam and the cleaning beam generated by the light source system; a chamber accommodating the light source system and the optical system; and a molecular oxygen supply unit in communication with the chamber.
摘要翻译：提供了一种极紫外（EUV）曝光装置和一种清洁曝光装置中包括的光学元件的方法。 EUV曝光装置包括：光源系统，其在曝光基板期间产生包含EUV光束的曝光光束，并在清洁光学元件期间产生具有比曝光光束更长的波长的清洁光束; 调整和图案化由所述光源系统产生的所述EUV光束和所述清洁光束的光学系统; 容纳光源系统和光学系统的腔室; 以及与腔室连通的分子氧供给单元。

3. 发明申请

US20070224522A1 Substrate including deformed portions and method of adjusting a curvature of a substrate 审中-公开
标题翻译：包括变形部分的基板和调整基板的曲率的方法
公开(公告)号：US20070224522A1
公开(公告)日：2007-09-27
申请号：US11723280
申请日：2007-03-19
申请人： Myoung-soo Lee , Dong-wan Kim , Sung-min Huh , Suk-jong Bae
发明人： Myoung-soo Lee , Dong-wan Kim , Sung-min Huh , Suk-jong Bae
IPC分类号： H01L31/0232 , B32B9/00 , B32B17/06 , G21K5/00 , G03F1/00 , B32B17/10
CPC分类号： H01L31/18 , G03F1/60 , Y10T428/31616
摘要： Adjusting a curvature of a substrate includes forming at least one deformed portion in a predetermined region of a substrate, wherein the substrate includes a curved region before forming the at least one deformed portion, and forming the at least one deformed portion includes irradiating the substrate in the predetermined region so as to fixedly displace substrate material in the predetermined region.
摘要翻译：调整基板的曲率包括在基板的预定区域中形成至少一个变形部分，其中基板在形成至少一个变形部分之前包括弯曲区域，并且形成至少一个变形部分包括将基板预定区域，以便在预定区域中固定地移位基板材料。

4. 发明授权

US07745072B2 Method of correcting critical dimension in photomask and photomask having corrected critical dimension using the method 失效
标题翻译：使用该方法校正光掩模和光掩模中具有校正关键尺寸的临界尺寸的方法
公开(公告)号：US07745072B2
公开(公告)日：2010-06-29
申请号：US11808588
申请日：2007-06-12
申请人： Jin-sik Jung , Hee-bom Kim , Hoon Kim , Sung-min Huh
发明人： Jin-sik Jung , Hee-bom Kim , Hoon Kim , Sung-min Huh
IPC分类号： G03F1/00 , G03F1/14
CPC分类号： G03F1/72
摘要： Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.
摘要翻译：提供了一种使用该方法校正光掩模中的临界尺寸（CD）和具有校正CD的光掩模的方法。该方法可以包括提供相对于入射光透明的衬底，在衬底上形成屏蔽图案以形成光掩模，检测屏蔽图案的CD误差区域，以及形成校正膜以改变事件的强度在CD错误区域中的光，以校正由屏蔽图案形成的电路图案的临界尺寸（CD）。

5. 发明授权

US07563547B2 Photomask and method of manufacturing the same 有权
标题翻译：光掩模及其制造方法
公开(公告)号：US07563547B2
公开(公告)日：2009-07-21
申请号：US10982851
申请日：2004-11-08
申请人： Jin-hyung Park , Sung-min Huh
发明人： Jin-hyung Park , Sung-min Huh
IPC分类号： G03F1/08 , G03F1/14
CPC分类号： G03F1/36
摘要： A photomask ensures the transfer of a pattern having a uniform and desired CD onto a substrate from which an electronic device or the like is made. The photomask includes a transparent substrate, a light-shielding film on the front side of the substrate and defining a mask pattern of transmission regions dedicated for pattern formation, and an auxiliary pattern on the front side of the substrate that alters the intensity of the light beam passing through the substrate. After the mask pattern is formed, the photomask is tested to determine variations between the desired (target) CD and the CDs of the features of a pattern transcribed onto a test wafer using the photomask. A density function in which characteristics of the auxiliary pattern to be formed, e.g., the size, depth and/or pitch of recesses, is developed as a prediction of the intensity distribution of the light beam transmitted through the substrate once the auxiliary pattern is present at the front side of the substrate. The photomask is then repaired/corrected by designing and forming the auxiliary pattern according to the density function so as to prevent local or global variations between the desired CD and the actual CD from occurring.
摘要翻译：光掩模确保将具有均匀且期望的CD的图案转移到制造电子设备等的基板上。光掩模包括透明基板，在基板的正面上的遮光膜，并且限定专用于图案形成的透射区域的掩模图案，以及在基板的正面上改变光强度的辅助图案光束通过基板。在形成掩模图案之后，测试光掩模以确定期望（目标）CD和使用光掩模转录到测试晶片上的图案的特征的CD之间的变化。要形成的辅助图案的特性（例如凹槽的尺寸，深度和/或间距）的密度函数被形成为一旦辅助图案存在就作为透射通过基底的光束的强度分布的预测在基板的正面。然后通过根据密度函数设计和形成辅助图案来修复/校正光掩模，以便防止所需CD和实际CD之间发生局部或全局变化。

6. 发明申请

US20080090156A1 Photo mask having assist pattern and method of fabricating the same 失效
标题翻译：具有辅助图案的光罩及其制造方法
公开(公告)号：US20080090156A1
公开(公告)日：2008-04-17
申请号：US11821762
申请日：2007-06-25
申请人： Hee-Bom Kim , Jeung-woo Lee , Sung-min Huh
发明人： Hee-Bom Kim , Jeung-woo Lee , Sung-min Huh
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/28 , G03F1/36 , G03F1/46
摘要： A photomask has highly reliable assist patterns, and a method of fabricating the same is provided. The photomask includes a transparent substrate, circuit pattern and assist patterns. The circuit pattern recessed into the transparent substrate relative to a surface thereof has a first thickness, and assist patterns located adjacent to, and spaced apart from, the circuit pattern are recessed into the transparent substrate relative to the surface thereof while having a second thickness less than the first thickness.
摘要翻译：光掩模具有高度可靠的辅助图案，并且提供了其制造方法。光掩模包括透明基板，电路图案和辅助图案。相对于其表面凹入透明基板的电路图案具有第一厚度，并且邻近于电路图案并且与电路图案间隔开的辅助图案相对于其表面凹入到透明基板中，同时具有较小的第二厚度比第一厚度。

7. 发明申请

US20080044742A1 Method of correcting critical dimension in photomask and photomask having corrected critical dimension using the method 失效
标题翻译：使用该方法校正光掩模和光掩模中具有校正关键尺寸的临界尺寸的方法
公开(公告)号：US20080044742A1
公开(公告)日：2008-02-21
申请号：US11808588
申请日：2007-06-12
申请人： Jin-sik Jung , Hee-bom Kim , Hoon Kim , Sung-min Huh
发明人： Jin-sik Jung , Hee-bom Kim , Hoon Kim , Sung-min Huh
IPC分类号： G03F7/004
CPC分类号： G03F1/72
摘要： Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.
摘要翻译：提供了一种使用该方法校正光掩模中的临界尺寸（CD）和具有校正CD的光掩模的方法。该方法可以包括提供相对于入射光透明的衬底，在衬底上形成屏蔽图案以形成光掩模，检测屏蔽图案的CD误差区域，以及形成校正膜以改变事件的强度在CD错误区域中的光，以校正由屏蔽图案形成的电路图案的临界尺寸（CD）。

8. 发明授权

US07927767B2 Reflective photomasks and methods of determining layer thicknesses of the same 有权
标题翻译：反射光掩模和确定其厚度的方法
公开(公告)号：US07927767B2
公开(公告)日：2011-04-19
申请号：US12232959
申请日：2008-09-26
申请人： Byoung-sup Ahn , Chang-kwon Hwangbo , Sung-min Huh , Hee-young Kang
发明人： Byoung-sup Ahn , Chang-kwon Hwangbo , Sung-min Huh , Hee-young Kang
IPC分类号： G06F1/00
CPC分类号： G01B11/0625 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/32
摘要： A reflective photomask and a method of determining or optimizing thicknesses of layers of the reflective photomask are provided. The reflective photomask may include a substrate, a reflective layer, an absorptive pattern, and a spacer. The substrate may include a reflective region and an absorptive region, the reflective layer may be formed between the reflective and absorptive regions, the absorptive pattern may be formed on the reflective layer corresponding to the reflective region, and the spacer may be formed at an upper portion, lower portion, or inside of the reflective layer so as to correspond to the reflective region.
摘要翻译：提供反射光掩模和确定或优化反射光掩模层的厚度的方法。反射光掩模可以包括基底，反射层，吸收图案和间隔物。基板可以包括反射区域和吸收区域，反射层可以形成在反射区域和吸收区域之间，吸收图案可以形成在对应于反射区域的反射层上，并且间隔物可以形成在上部部分，下部或内部，以便对应于反射区域。

9. 发明授权

US07745068B2 Binary photomask having a compensation layer 失效
标题翻译：具有补偿层的二进制光掩模
公开(公告)号：US07745068B2
公开(公告)日：2010-06-29
申请号：US11446980
申请日：2006-06-06
申请人： Jin-Sik Jung , Hee-Bom Kim , Woo-Sung Han , Sung-Min Huh
发明人： Jin-Sik Jung , Hee-Bom Kim , Woo-Sung Han , Sung-Min Huh
IPC分类号： G03F1/14
CPC分类号： G03F1/29
摘要： A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on a topology of the compensation layer and arranged on the transmission-prevention layer and/or the substrate.
摘要翻译：提供了具有改进的分辨率的二进制光掩模及其制造方法。二元光掩模可以包括基板，形成在基板上以限定电路图案的传输防止图案，以及补偿层，其被配置为基于补偿层的拓扑来改变透射二进制光掩模的光，并布置在透射 - 防止层和/或基板。

10. 发明申请

US20060240334A1 Method of manufacturing EUVL alternating phase-shift mask 有权
公开(公告)号：US20060240334A1
公开(公告)日：2006-10-26
申请号：US11367438
申请日：2006-03-06
申请人： Sung-min Huh , Hee-bom Kim , Seong-woon Choi , Dong-wan Kim , Chan-uk Jeon
发明人： Sung-min Huh , Hee-bom Kim , Seong-woon Choi , Dong-wan Kim , Chan-uk Jeon
IPC分类号： G21K5/00 , G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/30
摘要： A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.

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