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    • 1. 发明申请
    • METHOD OF FORMING PHOTOMASK USING CALIBRATION PATTERN, AND PHOTOMASK HAVING CALIBRATION PATTERN
    • 使用校准图形成光电子的方法和具有校准图案的光电子
    • US20120159405A1
    • 2012-06-21
    • US13240732
    • 2011-09-22
    • Young-keun YOONHee-bom KimMyoung-soo LeeChan-uk JeonHak-seung Han
    • Young-keun YOONHee-bom KimMyoung-soo LeeChan-uk JeonHak-seung Han
    • G06F17/50
    • G03F1/70
    • A method of forming a photomask using a calibration pattern that may exactly transfer a desired pattern to a substrate. The method includes providing one-dimensional calibration design patterns each having first design measures and providing two-dimensional calibration design patterns each having second design measures; obtaining one-dimensional calibration measured patterns using the one-dimensional calibration design patterns and obtaining two-dimensional calibration measured patterns using the two-dimensional calibration design patterns; obtaining first measured measures of the one-dimensional calibration measured patterns and obtaining second measured measures of the two-dimensional calibration measured patterns; establishing a correlation between the first measured measures and the second measured measures; and converting a main measured measure of a main pattern into a corresponding one of the first measured measures using the correlation.
    • 使用可以将期望图案精确地转印到基板的校准图案形成光掩模的方法。 该方法包括提供一维校准设计图案,每个具有第一设计措施并提供每个具有第二设计措施的二维校准设计图案; 使用一维校准设计图案获得一维校准测量图案,并使用二维校准设计图案获得二维校准测量图案; 获得一维校准测量图案的第一测量度量,并获得二维校准测量图案的第二测量度量; 建立第一测量措施与第二测量措施之间的相关性; 以及使用所述相关性将主模式的主测量度量转换为相应的第一测量度量。
    • 4. 发明授权
    • Method of correcting deviations of critical dimensions of patterns formed on a wafer in a EUVL process
    • 校正在EUVL工艺中在晶片上形成的图案的临界尺寸偏差的方法
    • US07247412B2
    • 2007-07-24
    • US11319245
    • 2005-12-27
    • Myoung-Soo Lee
    • Myoung-Soo Lee
    • G03C5/00G03F9/00
    • G03F1/72B82Y10/00B82Y40/00G03F1/24G03F1/84G03F7/70625Y10S430/143
    • An embodiment includes a method of correcting deviations of critical dimensions of patterns formed on a wafer in an extreme ultraviolet lithography (EUVL) process. The embodiment includes preparing a reflection photo mask having a reflection layer and absorption patterns that are formed on the reflection layer to define reflection regions therebetween. An exposure process is performed using the reflection photo mask, thereby forming the patterns on the wafer. Critical dimensions of the patterns are measured. A reference critical dimension is set based on the measured critical dimensions of the patterns. Critical dimension deviations are determined by comparing the measured critical dimensions of the patterns with the reference critical dimension. Energy beams having energies corresponding to the critical dimension deviations are locally irradiated onto the reflection layer, thus locally varying the thickness of the reflection layer.
    • 实施例包括在极紫外光刻(EUVL)工艺中校正在晶片上形成的图案的临界尺寸的偏差的方法。 该实施例包括制备具有反射层的反射光掩模和形成在反射层上的吸收图案,以在其间限定反射区域。 使用反射光掩模进行曝光处理,从而在晶片上形成图案。 测量图案的关键尺寸。 基于模式的测量临界尺寸设置参考临界尺寸。 通过将模型的测量临界尺寸与参考临界尺寸进行比较来确定关键尺寸偏差。 具有对应于临界尺寸偏差的能量的能量束被局部照射到反射层上,从而局部地改变反射层的厚度。
    • 7. 发明授权
    • Method for inspecting critical dimension uniformity at high speed measurement
    • 在高速测量时检查临界尺寸均匀度的方法
    • US08213722B2
    • 2012-07-03
    • US12607238
    • 2009-10-28
    • Hee-Bom KimMyoung-Soo LeeYoung-Su Sung
    • Hee-Bom KimMyoung-Soo LeeYoung-Su Sung
    • G06K9/68
    • G06T7/0006G03F1/86G03F7/70625G06T2207/30148
    • A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.
    • 用于检查光掩模图案的CD(CD)的均匀性的方法提高了产量。 该方法通过使用电子显微镜精确测量光掩模来获得CD。 然后,通过光学显微镜以高速拍摄光掩模,获得具有形成在光掩模中的多个图案的测量图像。 当测量图像的开放密度相对较低时,通过仅捕获测量图像中的图案区域来计算基于CD的灰度级,并且获得估计值和相关系数。 因此,对于具有较低开放密度的测量图像的高速测量,可以更清楚地确认CD的均匀性。