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1. 发明授权

US08213722B2 Method for inspecting critical dimension uniformity at high speed measurement 有权
标题翻译：在高速测量时检查临界尺寸均匀度的方法
公开(公告)号：US08213722B2
公开(公告)日：2012-07-03
申请号：US12607238
申请日：2009-10-28
申请人： Hee-Bom Kim , Myoung-Soo Lee , Young-Su Sung
发明人： Hee-Bom Kim , Myoung-Soo Lee , Young-Su Sung
IPC分类号： G06K9/68
CPC分类号： G06T7/0006 , G03F1/86 , G03F7/70625 , G06T2207/30148
摘要： A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.
摘要翻译：用于检查光掩模图案的CD（CD）的均匀性的方法提高了产量。该方法通过使用电子显微镜精确测量光掩模来获得CD。然后，通过光学显微镜以高速拍摄光掩模，获得具有形成在光掩模中的多个图案的测量图像。当测量图像的开放密度相对较低时，通过仅捕获测量图像中的图案区域来计算基于CD的灰度级，并且获得估计值和相关系数。因此，对于具有较低开放密度的测量图像的高速测量，可以更清楚地确认CD的均匀性。

2. 发明申请

US20100111427A1 Method for Inspecting Critical Dimension Uniformity at High Speed Measurement 有权
标题翻译：检测高速测量中临界尺寸均匀性的方法
公开(公告)号：US20100111427A1
公开(公告)日：2010-05-06
申请号：US12607238
申请日：2009-10-28
申请人： Hee-Bom Kim , Myoung-Soo Lee , Young-Su Sung
发明人： Hee-Bom Kim , Myoung-Soo Lee , Young-Su Sung
IPC分类号： G06K9/68
CPC分类号： G06T7/0006 , G03F1/86 , G03F7/70625 , G06T2207/30148
摘要： A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.
摘要翻译：用于检查光掩模图案的CD（CD）的均匀性的方法提高了产量。该方法通过使用电子显微镜精确测量光掩模来获得CD。然后，通过光学显微镜高速拍摄光掩模，获得具有形成在光掩模中的多个图案的测量图像。当测量图像的开放密度相对较低时，通过仅捕获测量图像中的图案区域来计算基于CD的灰度级，并且获得估计值和相关系数。因此，对于具有较低开放密度的测量图像的高速测量，可以更清楚地确认CD的均匀性。

3. 发明授权

US08568944B2 Reflective extreme ultraviolet mask and method of manufacturing the same 有权
标题翻译：反射极紫外线掩膜及其制造方法
公开(公告)号：US08568944B2
公开(公告)日：2013-10-29
申请号：US13422206
申请日：2012-03-16
申请人： Hoon Kim , Young-Su Sung , Young-Kuen Kim , Dong-Seok Nam
发明人： Hoon Kim , Young-Su Sung , Young-Kuen Kim , Dong-Seok Nam
IPC分类号： G03F1/22 , G03F1/24
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00
摘要： A reflective EUV mask and a method of manufacturing the same, the reflective EUV mask including a mask substrate having an exposing region and a peripheral region, the mask substrate including a light scattering crystalline portion that scatters light incident to the peripheral region and that decreases reflectivity of the peripheral region; a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening that exposes the crystalline portion; and an absorbing layer pattern on an upper surface of the reflective layer, the absorbing layer pattern having a second opening in fluidic communication with the first opening.
摘要翻译：反射型EUV掩模及其制造方法，所述反射型EUV掩模包括具有曝光区域和外围区域的掩模基板，所述掩模基板包括散射入射到所述周边区域的光并且降低反射率的光散射结晶部分的周边地区; 在所述掩模基板的上表面上的反射层，所述反射层具有暴露所述结晶部分的第一开口; 以及在所述反射层的上表面上的吸收层图案，所述吸收层图案具有与所述第一开口流体连通的第二开口。

4. 发明申请

US20120237860A1 REFLECTIVE EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：反射极限超紫外线掩模及其制造方法
公开(公告)号：US20120237860A1
公开(公告)日：2012-09-20
申请号：US13422206
申请日：2012-03-16
申请人： Hoon KIM , Young-Su Sung , Young-Kuen Kim , Dong-Seok Nam
发明人： Hoon KIM , Young-Su Sung , Young-Kuen Kim , Dong-Seok Nam
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00
摘要： A reflective EUV mask and a method of manufacturing the same, the reflective EUV mask including a mask substrate having an exposing region and a peripheral region, the mask substrate including a light scattering crystalline portion that scatters light incident to the peripheral region and that decreases reflectivity of the peripheral region; a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening that exposes the crystalline portion; and an absorbing layer pattern on an upper surface of the reflective layer, the absorbing layer pattern having a second opening in fluidic communication with the first opening.
摘要翻译：反射型EUV掩模及其制造方法，所述反射型EUV掩模包括具有曝光区域和外围区域的掩模基板，所述掩模基板包括散射入射到所述周边区域的光并且降低反射率的光散射结晶部分的周边地区; 在所述掩模基板的上表面上的反射层，所述反射层具有暴露所述结晶部分的第一开口; 以及在所述反射层的上表面上的吸收层图案，所述吸收层图案具有与所述第一开口流体连通的第二开口。

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