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    • 3. 发明申请
    • Write head design and method for reducing adjacent track interference in at very narrow track widths
    • 用于在非常窄的轨道宽度上减少相邻轨道干扰的写头设计和方法
    • US20070115584A1
    • 2007-05-24
    • US11286077
    • 2005-11-23
    • Hamid BalamaneYimin HsuAron PentekYi Zheng
    • Hamid BalamaneYimin HsuAron PentekYi Zheng
    • G11B5/147
    • G11B5/3163G11B5/112G11B5/1278G11B5/3116G11B5/3146G11B5/315Y10T29/49021
    • A perpendicular write head having a wrap around trailing shield for reducing stray field writing and adjacent track interference. A method for constructing such a write head allows for excellent control of side shield gap thickness and trailing shield gap thickness, and allows the ratio of side gap to trailing gap thicknesses to be maintained at about two to one as desired. The method includes depositing forming a write pole by constructing a mask which may include a bi-layer hard mask, and then ion milling to form the write pole. Once the write pole has been formed, a layer of alumina or some other non-magnetic material can be conformally deposited. A reactive ion mill (RIM) can be performed to open up the top of the write pole (remove the horizontally disposed portions of the alumina layer). Then, a second layer of alumina or some other non-magnetic material can be deposited, and the write pole can be plated. The thickness of the side shield gaps is defined by the sum of the final thicknesses of the first and second alumina layers, while the thickness of the first magnetic layer defines the thickness of the trailing shield gap.
    • 垂直写头,其具有围绕后屏蔽的卷绕,用于减少杂散场写入和相邻轨道干涉。 用于构造这样的写头的方法允许对侧屏蔽间隙厚度和后屏蔽间隙厚度的优良控制,并且允许侧间隙与后间隙厚度的比率根据需要保持在大约二对一。 该方法包括通过构成可包括双层硬掩模的掩模沉积形成写入极,然后进行离子铣削以形成写入极。 一旦形成了写极,就可以共形沉积一层氧化铝或其它非磁性材料。 可以执行反应离子磨(RIM)以打开写柱的顶部(去除氧化铝层的水平放置的部分)。 然后,可以沉积第二层氧化铝或一些其它非磁性材料,并且可以对写入极进行电镀。 侧屏蔽间隙的厚度由第一和第二氧化铝层的最终厚度之和限定,而第一磁性层的厚度限定了后屏蔽间隙的厚度。
    • 4. 发明授权
    • Write head design and method for reducing adjacent track interference at very narrow track widths
    • 用于在非常窄的轨道宽度上减少相邻轨道干扰的写头设计和方法
    • US08054586B2
    • 2011-11-08
    • US11286077
    • 2005-11-23
    • Hamid BalamaneYimin HsuAron PentekYi Zheng
    • Hamid BalamaneYimin HsuAron PentekYi Zheng
    • G11B5/33G11B5/127
    • G11B5/3163G11B5/112G11B5/1278G11B5/3116G11B5/3146G11B5/315Y10T29/49021
    • A perpendicular write head having a wrap around trailing shield for reducing stray field writing and adjacent track interference. A method for constructing such a write head allows for excellent control of side shield gap thickness and trailing shield gap thickness, and allows the ratio of side gap to trailing gap thicknesses to be maintained at about two to one as desired. The method includes depositing forming a write pole by constructing a mask which may include a bi-layer hard mask, and then ion milling to form the write pole. Once the write pole has been formed, a layer of alumina or some other non-magnetic material can be conformally deposited. A reactive ion mill (RIM) can be performed to open up the top of the write pole (remove the horizontally disposed portions of the alumina layer). Then, a second layer of alumina or some other non-magnetic material can be deposited, and the write pole can be plated. The thickness of the side shield gaps is defined by the sum of the final thicknesses of the first and second alumina layers, while the thickness of the first magnetic layer defines the thickness of the trailing shield gap.
    • 垂直写头,其具有围绕后屏蔽的卷绕,用于减少杂散场写入和相邻轨道干涉。 用于构造这样的写头的方法允许对侧屏蔽间隙厚度和后屏蔽间隙厚度的优良控制,并且允许侧间隙与后间隙厚度的比率根据需要保持在大约二对一。 该方法包括通过构成可包括双层硬掩模的掩模沉积形成写入极,然后进行离子铣削以形成写入极。 一旦形成了写极,就可以共形沉积一层氧化铝或其它非磁性材料。 可以执行反应离子磨(RIM)以打开写柱的顶部(去除氧化铝层的水平放置的部分)。 然后,可以沉积第二层氧化铝或一些其它非磁性材料,并且可以对写入极进行电镀。 侧屏蔽间隙的厚度由第一和第二氧化铝层的最终厚度之和限定,而第一磁性层的厚度限定了后屏蔽间隙的厚度。