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    • 3. 发明申请
    • Write head design and method for reducing adjacent track interference in at very narrow track widths
    • 用于在非常窄的轨道宽度上减少相邻轨道干扰的写头设计和方法
    • US20070115584A1
    • 2007-05-24
    • US11286077
    • 2005-11-23
    • Hamid BalamaneYimin HsuAron PentekYi Zheng
    • Hamid BalamaneYimin HsuAron PentekYi Zheng
    • G11B5/147
    • G11B5/3163G11B5/112G11B5/1278G11B5/3116G11B5/3146G11B5/315Y10T29/49021
    • A perpendicular write head having a wrap around trailing shield for reducing stray field writing and adjacent track interference. A method for constructing such a write head allows for excellent control of side shield gap thickness and trailing shield gap thickness, and allows the ratio of side gap to trailing gap thicknesses to be maintained at about two to one as desired. The method includes depositing forming a write pole by constructing a mask which may include a bi-layer hard mask, and then ion milling to form the write pole. Once the write pole has been formed, a layer of alumina or some other non-magnetic material can be conformally deposited. A reactive ion mill (RIM) can be performed to open up the top of the write pole (remove the horizontally disposed portions of the alumina layer). Then, a second layer of alumina or some other non-magnetic material can be deposited, and the write pole can be plated. The thickness of the side shield gaps is defined by the sum of the final thicknesses of the first and second alumina layers, while the thickness of the first magnetic layer defines the thickness of the trailing shield gap.
    • 垂直写头,其具有围绕后屏蔽的卷绕,用于减少杂散场写入和相邻轨道干涉。 用于构造这样的写头的方法允许对侧屏蔽间隙厚度和后屏蔽间隙厚度的优良控制,并且允许侧间隙与后间隙厚度的比率根据需要保持在大约二对一。 该方法包括通过构成可包括双层硬掩模的掩模沉积形成写入极,然后进行离子铣削以形成写入极。 一旦形成了写极,就可以共形沉积一层氧化铝或其它非磁性材料。 可以执行反应离子磨(RIM)以打开写柱的顶部(去除氧化铝层的水平放置的部分)。 然后,可以沉积第二层氧化铝或一些其它非磁性材料,并且可以对写入极进行电镀。 侧屏蔽间隙的厚度由第一和第二氧化铝层的最终厚度之和限定,而第一磁性层的厚度限定了后屏蔽间隙的厚度。
    • 4. 发明授权
    • Write head design and method for reducing adjacent track interference at very narrow track widths
    • 用于在非常窄的轨道宽度上减少相邻轨道干扰的写头设计和方法
    • US08054586B2
    • 2011-11-08
    • US11286077
    • 2005-11-23
    • Hamid BalamaneYimin HsuAron PentekYi Zheng
    • Hamid BalamaneYimin HsuAron PentekYi Zheng
    • G11B5/33G11B5/127
    • G11B5/3163G11B5/112G11B5/1278G11B5/3116G11B5/3146G11B5/315Y10T29/49021
    • A perpendicular write head having a wrap around trailing shield for reducing stray field writing and adjacent track interference. A method for constructing such a write head allows for excellent control of side shield gap thickness and trailing shield gap thickness, and allows the ratio of side gap to trailing gap thicknesses to be maintained at about two to one as desired. The method includes depositing forming a write pole by constructing a mask which may include a bi-layer hard mask, and then ion milling to form the write pole. Once the write pole has been formed, a layer of alumina or some other non-magnetic material can be conformally deposited. A reactive ion mill (RIM) can be performed to open up the top of the write pole (remove the horizontally disposed portions of the alumina layer). Then, a second layer of alumina or some other non-magnetic material can be deposited, and the write pole can be plated. The thickness of the side shield gaps is defined by the sum of the final thicknesses of the first and second alumina layers, while the thickness of the first magnetic layer defines the thickness of the trailing shield gap.
    • 垂直写头,其具有围绕后屏蔽的卷绕,用于减少杂散场写入和相邻轨道干涉。 用于构造这样的写头的方法允许对侧屏蔽间隙厚度和后屏蔽间隙厚度的优良控制,并且允许侧间隙与后间隙厚度的比率根据需要保持在大约二对一。 该方法包括通过构成可包括双层硬掩模的掩模沉积形成写入极,然后进行离子铣削以形成写入极。 一旦形成了写极,就可以共形沉积一层氧化铝或其它非磁性材料。 可以执行反应离子磨(RIM)以打开写柱的顶部(去除氧化铝层的水平放置的部分)。 然后,可以沉积第二层氧化铝或一些其它非磁性材料,并且可以对写入极进行电镀。 侧屏蔽间隙的厚度由第一和第二氧化铝层的最终厚度之和限定,而第一磁性层的厚度限定了后屏蔽间隙的厚度。
    • 5. 发明申请
    • Process to open connection vias on a planarized surface
    • 在平坦化表面上打开连接通孔的过程
    • US20070245557A1
    • 2007-10-25
    • US11411555
    • 2006-04-25
    • Amanda BaerHamid BalamaneMichael FeldbaumMing JiangAron Pentek
    • Amanda BaerHamid BalamaneMichael FeldbaumMing JiangAron Pentek
    • H01K3/10
    • G11B5/3163G11B5/1278G11B5/3116Y10T29/49021Y10T29/49032Y10T29/49044Y10T29/49126Y10T29/49139Y10T29/49153Y10T29/49155Y10T29/49165Y10T29/49169
    • A method for forming a via in an alumina protective layer on a structure such as a magnetic write head for use in perpendicular magnetic recording. A substrate such as an alumina fill layer, magnetic shaping layer, etc. is formed with region having a contact pad formed therein. A structure such as a magnetic pole, and or magnetic trailing shield, is formed over the substrate and is covered with a thick layer of alumina. The alumina can be applied by a high deposition rate process that does not form voids or seams in the alumina layer. The alumina layer can then be planarized by a chemical mechanical polishing process (CMP) and then a mask structure, such as a photoresist mask, is formed over the alumina layer. The mask structure is formed with an opening disposed over the contact pad. A reactive ion mill is then performed to remove portions of the alumina layer that are exposed at the opening in the mask, thereby forming a via in the alumina layer. The mask can then be lifted off and an electrically conductive material can be deposited into the via. Forming the via by a subtractive method rather than by a liftoff process allows the alumina to be deposited in a manner that does not result in voids. The use of reactive ion milling allows the via to be well defined and formed with substantially vertical side walls rather than in a conical or outward spreading fashion as would be formed by other material removal processes such as wet etching.
    • 在用于垂直磁记录的诸如磁写头的结构上的氧化铝保护层中形成通孔的方法。 在其中形成有形成有接触垫的区域形成诸如氧化铝填充层,磁性成形层等的基板。 诸如磁极和/或磁性后屏蔽的结构形成在衬底之上,并被厚层氧化铝覆盖。 可以通过在氧化铝层中不形成空隙或接缝的高沉积速率工艺来施加氧化铝。 然后可以通过化学机械抛光工艺(CMP)将氧化铝层平坦化,然后在氧化铝层上形成诸如光致抗蚀剂掩模的掩模结构。 掩模结构形成有设置在接触垫上方的开口。 然后执行反应离子研磨机以除去在掩模中的开口处暴露的部分氧化铝层,从而在氧化铝层中形成通孔。 然后可以将掩模剥离,并且可以将导电材料沉积到通孔中。 通过减法法而不是通过剥离工艺形成通孔允许以不会导致空隙的方式沉积氧化铝。 使用反应离子研磨允许通孔被良好地限定并且形成有基本垂直的侧壁,而不是以其它材料去除工艺(例如湿蚀刻)形成的锥形或向外扩展方式。