专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

DE10041354A1 Foreign particle or defect checking system for inspection of substrate or wafer, has size information processing device which processes size of foreign particle or defect on predetermined object 未知
公开(公告)号：DE10041354A1
公开(公告)日：2001-04-12
申请号：DE10041354
申请日：2000-08-23
申请人： HITACHI ELECTR ENG , HITACHI LTD
发明人： NISHIYAMA HIDETOSHI , NOGUCHI MINORI , OHSHIMA YOSHIMASA , SAIKI KEIICHI , WATANABE KENJI , WATANABE TETSUYA , NAKAMURA HISATO , JINGU TAKAHIRO , INOUE YUKO
IPC分类号： H01L21/66 , G01N21/898
摘要： A signal processing circuit (105) performs the processing of the predetermined size of the foreign particle or defect information the registered signal in an defect detector. An output device performs the output of the size information of the foreign particle or defect from the defect detector and the output signal of the signal processing circuit. An illumination device (101) radiates light to a predetermined object to be checked. A light inspection device (104) determines the reflected light from the illuminated object, or the radiated light scattered by the illumination device. An defect detector registers a foreign particle or an defect on the object by synchronous processing of the detection signal. An independent claim is also included for a foreign particle or defect registering method.

2. 发明专利

JP2001264264A FOREIGN MATTER OR DEFECT INSPECTING DEVICE AND FOREIGN MATTER OR DEFECT INSPECTING METHOD 失效
公开(公告)号：JP2001264264A
公开(公告)日：2001-09-26
申请号：JP2000076357
申请日：2000-03-14
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： NISHIYAMA HIDETOSHI , NOGUCHI MINORU , OSHIMA YOSHIMASA , SAEKI KEIICHI , WATANABE TETSUYA , NAKAMURA HISATO , JINGU TAKAHIRO , INOUE HIROKO
IPC分类号： G01B11/00 , G01B11/02 , G01B11/24 , G01B11/30 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To quickly perform failure countermeasures when performing inspection or failure analysis of a manufacturing process of a semiconductor wafer or a thin film substrate. SOLUTION: In this foreign matter or defect inspecting device inspecting by an optical system the size of the foreign matter or defect is associated with a failure cause in its result, the failure cause is designated by a data processing means from statistics of results of inspections, and result information of the inspections is displayed. Thresholds of failures per areas in the semiconductor wafer or the like are set and foreign matter is statistically evaluated for performing the failure analysis.

3. 发明专利

JP2003098111A METHOD FOR INSPECTING DEFECT AND APPARATUS THEREFOR 审中-公开
公开(公告)号：JP2003098111A
公开(公告)日：2003-04-03
申请号：JP2001288013
申请日：2001-09-21
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： NISHIYAMA HIDETOSHI , NOGUCHI MINORU , OSHIMA YOSHIMASA , HAMAMATSU REI , WATANABE KENJI , WATANABE TETSUYA , JINGU TAKAHIRO
IPC分类号： G01B11/30 , G01B11/24 , G01N21/956 , G06T1/00 , G06T7/60 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To solve the problem that it takes an enormous amount of time to analyze detected foreign objects when the number of detected objects by an inspecting apparatus is large, leading to a delay in taking countermeasures against failures of a manufacturing process while a total number of detected objects is outputted as the detected result of the foreign object defect-inspecting apparatus and the countermeasure against failures of the manufacturing process is taken by analyzing foreign objects/defects detected by the inspecting apparatus conventionally. SOLUTION: In the defect inspecting apparatus which inspects by an optical system, failure causes are related to sizes of foreign objects or defects in the result, and a data processing means points out the failure cause from statistics of the inspection result and displays information on the inspection result. A threshold where a semiconductor wafer or the like becomes defective is set for each region of the semiconductor wafer or the like, and a defect analysis is carried out by statistically evaluating foreign objects.

4. 发明专利

JP2000105203A DEFECT INSPECTING DEVICE AND METHOD 失效
公开(公告)号：JP2000105203A
公开(公告)日：2000-04-11
申请号：JP20607899
申请日：1999-07-21
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： NOGUCHI MINORU , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI , MATSUMOTO SHUNICHI , KENBO YUKIO , MATSUNAGA RYOJI , SAKAI SHIGETOSHI , NINOMIYA TAKANORI , WATANABE TETSUYA , NAKAMURA HISATO , JINGU TAKAHIRO , MORISHIGE YOSHIO , CHIKAMATSU SHUICHI
IPC分类号： G01B11/30 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To quickly and precisely inspect a defect such as a very small contaminant by calculating dispersion based on signals in a portion with the same circuit patterns formed or in its vicinity, and by extracting a signal indicating the defect such as the very small contaminant out of detected signals based on a threshold set on the basis of a result calculated hereinbefore. SOLUTION: An illumination optical system 100 having a laser beam 101, lenses 102-104, a beam splitter and the like has a precdribed inclination with respect to a main straight line group of a circuit pattern, and an inspected objective substrate 1 is irradiated subtantially orthogonally to a traveling direction of a substrate mounting table 304 for mounting the objective substrate 1. An inspecting optical system 200 detects reflected scattered light provided by a defect such as a contaminant existing on the substrate 1, using image sensors 205, 206 through lenses 201, 203 and a beam aplitter 204, to feed signals to a processing circuit 400. A threshold as a determination reference is set in a defect determining process in the circuit 400 based on a dispersion of the resulting signals, and the signal indicating the defect such as the contaminant is extracted, based on the set threshold.

5. 发明专利

JPH01305477A METHOD FOR INSPECTING APPEARANCE DEFECT 失效
公开(公告)号：JPH01305477A
公开(公告)日：1989-12-08
申请号：JP13687688
申请日：1988-06-02
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： OGINO MASAYOSHI , TSUKAGOSHI MASAKI , JINGU TAKAHIRO , ITO SHIN , ABE SHIGERU
IPC分类号： G01B11/24 , G01N21/88 , G01N21/93 , G03F1/00 , G06T1/00 , H01L21/027 , H01L21/30 , H01L21/66
摘要： PURPOSE:To also qualify the location and the kind of a defect by executing the comparison of one location so as to be overlapped by changing an opponent in case of detecting a noncoincident part by comparing two locations having the identity of pattern, and deciding the presence of a defective candidate when the noncoincident part is detected at the same location even when the opponent is different. CONSTITUTION:The image of a first small area a1 in a first chip pattern (a) is image-picked up continuously, and is stored as a first storage image D1 by a storage part 15. Next, the image of a first small area b1 in a second chip pattern (b) is image-picked up continuously, and is stored as a second storage image D2, and is inputted to the input terminal 16 on one side of a defect decision part 18 as a first inspection image E2. To the input terminal 17 on the other side of the defect decision part 18, the first storage image D1 of the small area a1 in the first chip pattern (a) is inputted as a reference image signal. At the defect decision part 18, the light-and-shade images of the first inspection image E2 and the first storage image D1 are compared. When difference between them exists, it is decided that comparison exists.

6. 发明专利

JP2001060607A DEVICE FOR INSPECTING FOREIGN MATTER AND FAULT 失效
公开(公告)号：JP2001060607A
公开(公告)日：2001-03-06
申请号：JP23651099
申请日：1999-08-24
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： NISHIYAMA HIDETOSHI , NOGUCHI MINORU , OSHIMA YOSHIMASA , WATANABE TETSUYA , NAKAMURA HISATO , JINGU TAKAHIRO , INOUE HIROKO
IPC分类号： G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To quickly investigate the causes of abnormality by measuring an information on size of the detected object at real time and controlling only the detected object of specific size using the information on size. SOLUTION: First, a light from an illumination source 201 is given to an object 202 to be inspected, a scattering light from the object 202 to be inspected is condensed by a condensing lens 203, and a reflection light from the object 202 to be inspected is detected by a detetcor 204. The reflection light detected by the detector 204 is subjected to photoelectric conversion, and it is processed by a signal processing circuit 205 to detect a foreign matter. Further, the object 202 to be inspected is moved by a stage 207, so that a foreign matter can be detected in the entire area of the object 202 and a detection result be also indicated in a data indication part 206. Thus, a status relating to the size and generation cause of the foreign matter having a specific size is controlled, thereby finding out the cause of generation of the foreign matter quickly in a manufacturing device.

7. 发明专利

JPH09269294A MANUFACTURE OF ELECTRONIC PART 失效
公开(公告)号：JPH09269294A
公开(公告)日：1997-10-14
申请号：JP8020096
申请日：1996-04-02
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： SHIBA MASATAKA , WATANABE KENJI , HAMADA TOSHIMITSU , ISHIKAWA SEIJI , GO NAOKI , YANAI TOSHIAKI , WATANABE TETSUYA , JINGU TAKAHIRO
IPC分类号： G01N21/84 , B23Q41/08 , G05B19/418 , G06Q50/00 , G06Q50/04 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To establish an optimum examination device and a frequency of examination in manufacture of semiconductor wafers and the like. SOLUTION: Each examination device of a group 1 of examination devices is connected to a network 8, and after an examination is finished, the result is transferred to a data gathering system 2. Where a predetermined badness mode is confirmed, same waferes selected from a predetermined process are examined by examination devices of different type of the group of examinations devices 1 and the data are gathered and analyzed to calculate the degree of correlation between types of device 4. On the other hand, a mean frequency of occurrence of badness may be obtained by analyzing the badness occurrence progress in the same process 5. Then, an optimum examination device and a frequency of examination are successively obtained on the basis of the results of calculations of calculation processing of the degree of correlation between types of device and of calculation processing of frequency of occurrence of badness 6, and the method of introduction of wafers into the group of examination devices 1 or the like is indicated through a system 7 managing the group of examination devices. It is thus possible to easily establish complicated conditions of examination such as an applied examination device, a frequency of examination and the like in manufacture of electronic parts as well as dramatically improve the economic efficiency of examination by performing an expected value minimization of the overall loss.

8. 发明专利

JPH09264728A METHOD AND APPARATUS FOR DETECTION OF FLAW OR FOREIGN BODY AS WELL AS ELECTRONIC COMPONENT WITH FLAW OR FOREIGN BODY INSPECTED 失效
公开(公告)号：JPH09264728A
公开(公告)日：1997-10-07
申请号：JP25184396
申请日：1996-09-24
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： DOI HIDEAKI , SHIBA MASATAKA , NAKAGAKI AKIRA , HIROI TAKASHI , NAKASU NOBUAKI , NAKAGAWA YASUO , WATANABE TETSUYA , JINGU TAKAHIRO
IPC分类号： G01B11/00 , G01B11/30 , G01N21/88 , G01N21/94 , G01N21/956
摘要： PROBLEM TO BE SOLVED: To expand the dynamic range of the detection of a flaw or a foreign body which exists on a substrate such as a semiconductor wafer or the like. SOLUTION: An inspection image 32a and a reference image 32b are obtained from digital information in which the output of a linear sensor 16 is A/D- converted 30. A flaw candidate 39 is detected by using disagreement information 35 by a two-chip comparison circuit 41 and by using mask information by a saturation-region processing circuit 42. The two-chip comparison circuit 41 enables a level to be matched by a correction circuit. In addition, when a threshold value in a comparison can be changed, the dynamic range of a linear sensor as a bottleneck for increasing a sensitivity is expanded without lowering a sensitivity more than required. The size or the position of a flaw or a foreign body which is comparatively large can be identified even when a blooming operation is generated by the flaw or the foreign body. Thereby, the accuracy of a flaw or foreign-body inspection apparatus can be enhanced.

9. 发明专利

JPH0545295A SETTING METHOD FOR CLASSIFIED AREA SENSING THRESHOLD 失效
公开(公告)号：JPH0545295A
公开(公告)日：1993-02-23
申请号：JP22883091
申请日：1991-08-14
申请人： HITACHI ELECTR ENG
发明人： JINGU TAKAHIRO
IPC分类号： G01B11/24 , G01B11/30 , G01N21/88 , G01N21/94 , G01N21/956 , G06T1/00 , G06T7/00 , H01L21/66
摘要： PURPOSE:To provide a method for setting effectively the sensing threshold area by area of an IC chip for a foreign matter inspecting device due to the adjoining chip comparison method. CONSTITUTION:A map memory 5b is provided which has a picture element memory Mg corresponding to the whole area of IC chip, and binary numbers exhibiting the sensing threshold area by area given by a test chip are stored in respective picture element memories of map memory corresponding to any desired areas. In inspecting adjoining chip, the binary numbers corresponding to different picture element signals of the applicable differential data are read one by one and interpreted by a decoder 5c, and the by-area sensing threshold [Vth]A is selected by a threshold selector circuit 5d and set on a foreign matter sensing part 4d. With this each picture element signal of applicable area is compared to serve for sensing of foreign matters. The classified area sensing threshold includes the inhibit threshold for erasing the map display of any mat area having a particularly large reflectivity.

10. 发明专利

JPH0621179A ERASING METHOD FOR ELIMINATED AREA OF IC CHIP 失效
公开(公告)号：JPH0621179A
公开(公告)日：1994-01-28
申请号：JP22883691
申请日：1991-08-14
申请人： HITACHI ELECTR ENG
发明人： JINGU TAKAHIRO
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , H01L21/66 , H01S3/00
摘要： PURPOSE:To provide a method wherein a part of the IC chip where a reflectance is abnormally large is determined to be an eliminated area and the position of the part is specified and an elimination threshold which eliminates the picture element signal of that part is obtained and the respective IC chips are tested successively this way and the map display of the removed areas is erased in a foreign substance inspection employing an adjacent chip comparing method. CONSTITUTION:One of chip rows in a wafer is arbitrarily selected as a test chip row and the test chip row is scanned by a laser beam LX to obtain the respective differential data Q of respective adjacent chips (A, B), (B, C),... successively. The absolute values of the picture element signals of the respective differential data corresponding to the identical positions of the respective chips are successively added by an adding circuit 5a and stored in the respective picture element memories of a map memory 5. The data among the stored added data SIGMA¦Q¦ which are larger than a certain value are determined as elimination thresholds VD for eliminated areas and the thresholds and the addresses (i, j) of the eliminated areas in the map memory are stored by a RAM 5c.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式