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1. 发明专利

DE60144319D1 Vorrichtung zur Behandlung einer Mikroprobe 未知
公开(公告)号：DE60144319D1
公开(公告)日：2011-05-12
申请号：DE60144319
申请日：2001-09-19
申请人： HITACHI LTD
发明人： TOKUDA MITSUO , FUKUDA MUNEYUKI , MITSUI YASUHIRO , KOIKE HIDEMI , TOMIMATSU SATOSHI , SHICHI HIROYASU , KASHIMA HIDEO , UMEMURA KAORU
IPC分类号： G01N1/32 , H01J37/305 , G01N1/28 , G01N23/225 , G01Q10/00 , G01Q30/02 , G01Q30/04 , G01Q30/16 , G01Q30/20 , H01J37/20 , H01J37/256 , H01J37/28 , H01J37/30 , H01J37/317 , H01L21/66 , H04L29/06 , H04L29/08

2. 发明专利

DE60144508D1 Verfahren zur Herstellung von Proben 未知
公开(公告)号：DE60144508D1
公开(公告)日：2011-06-09
申请号：DE60144508
申请日：2001-10-30
申请人： HITACHI LTD
发明人： SHICHI HIROYASU , ISHITANI TOHRU , KOIKE HIDEMI , UMEMURA KAORU , SEYA EIICHI , TOKUDA MITSUO , TOMIMATSU SATOSHI , KASHIMA HIDEO , FUKUDA MUNEYUKI
IPC分类号： H01L21/66 , B23K15/00 , B23K15/08 , G01N1/28 , G01N23/20 , G01Q20/02 , G01Q30/20 , G01Q70/00 , H01J37/305

3. 发明专利

JP2007123289A Method and apparatus for observing micro sample forming process 有权
标题翻译：观察微型成型工艺的方法和装置
公开(公告)号：JP2007123289A
公开(公告)日：2007-05-17
申请号：JP2007020310
申请日：2007-01-31
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOKUDA MITSUO , FUKUDA MUNEYUKI , MITSUI YASUHIRO , KOIKE HIDEMI , TOMIMATSU SATOSHI , SHICHI HIROYASU
IPC分类号： H01J37/28 , G01N1/28 , H01J37/30 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To realize an apparatus for observing the process of forming a micro sample and a method of observing the process of forming the micro sample, in which a cross sectional observation or an analysis of a wafer cross section from the direction of horizontal to vertical with high resolution, high precision and high throughput without breaking the wafer to be the sample. SOLUTION: The apparatus for observing the process of forming the micro sample has a focused ion beam optical system 31 and an electro-optical system 41 in the same vacuum system. A prove 71 supported with a manipulator 14 is provided for extracting a separated micro sample 22 after a micro sample including a required region in a specimen is separated with a charged particle beam processing. The manipulator has a function to regulate the position and attitude of the micro sample extracted from the specimen. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了实现用于观察形成微量样品的方法的装置和观察形成微量样品的方法的方法，其中横截面观察或来自该样品的晶片横截面的分析方向水平垂直，分辨率高，精度高，产量高，不破坏晶片成为样品。解决方案：用于观察形成微量样品的过程的装置在相同的真空系统中具有聚焦离子束光学系统31和电光学系统41。提供了用操纵器14支撑的证明书71，用于在用带电粒子束处理分离样本中包含所需区域的微量样品后，提取分离的微量样品22。操纵器具有调节从样品提取的微量样品的位置和姿态的功能。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2005203382A Micro testpiece processing and observation method and device 有权
标题翻译：微型加工和观察方法和装置
公开(公告)号：JP2005203382A
公开(公告)日：2005-07-28
申请号：JP2005107009
申请日：2005-04-04
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOKUDA MITSUO , FUKUDA MUNEYUKI , MITSUI YASUHIRO , KOIKE HIDEMI , TOMIMATSU SATOSHI , SHICHI HIROYASU
IPC分类号： H01J37/20 , H01J37/28 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To realize a micro testpiece processing and observation device in which cross-sectional observation and analysis of the wafer cross-section from horizontal to vertical direction can be made in high resolution and high precision with a high throughput, without splitting in pieces the wafer being a testpiece, and a micro testpiece processing and observation method.
SOLUTION: In the micro testpiece processing and observation device, a focused ion beam optical system and an electron optical system are equipped in an identical vacuum device, and a micro testpiece including the desired region of the testpiece is separated by a charged particle beam forming process, and a probe for sampling the micro testpiece separated is provided.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题为了实现以高分辨率和高精度以高生产率制造从水平方向到垂直方向的晶片横截面的横截面观察和分析的微型试件加工和观察装置，而不会将作为试件的晶片分开，以及微型试件的加工和观察方法。解决方案：在微型试件处理和观察装置中，在相同的真空装置中装备聚焦离子束光学系统和电子光学系统，并且包括试样的所需区域的微型试样由带电粒子分离梁形成工艺和用于取样分离的微型试件的探针。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2005108472A Film formation method using charged particle beam, selective etching method, and charged particle beam device 有权
标题翻译：使用充电粒子束的薄膜形成方法，选择性蚀刻方法和充电粒子束装置
公开(公告)号：JP2005108472A
公开(公告)日：2005-04-21
申请号：JP2003336691
申请日：2003-09-29
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： FUKUDA MUNEYUKI , SHICHI HIROYASU
IPC分类号： C23C14/32 , C23C16/00 , C23C16/04 , C23C16/52 , H01J37/30 , H01J37/302 , H01J37/305 , H01J37/317 , H01L21/302
CPC分类号： C23C16/047 , C23C16/52 , H01J37/3023 , H01J2237/30472 , H01J2237/31732 , H01J2237/31745
摘要： PROBLEM TO BE SOLVED: To provide a charged particle beam device capable of forming a film in an intended scanning area more effectively than before, with a film formation technology of scanning a converged charged particle beam, and capable of applying a selective etching on an intended scanning area more effectively than before, with a selective etching technology of scanning a converged charged particle beam.
SOLUTION: A setting of an optical system as an optimum way of scanning charged particle beam, a beam staying period, and a scanning distance are found against an intended irradiation area for film formation and selective etching, depending on a deposition rate stored in advance or a scanning cycle dependent etching rate, and the result of judgment is displayed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种能够以比以前更有效地在预期的扫描区域中形成膜的带电粒子束装置，通过扫描收敛的带电粒子束的成膜技术，并且能够施加选择性蚀刻使用扫描收敛的带电粒子束的选择性蚀刻技术，在预期的扫描区域上比以前更有效。解决方案：根据存储的沉积速率，针对用于成膜和选择性蚀刻的目的照射区域，找到作为扫描带电粒子束的最佳方式，光束停留时间和扫描距离的光学系统的设置提前或扫描周期相应的蚀刻速率，并且显示判断结果。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2003022776A Sample production apparatus and sample production method 有权
标题翻译：样品生产设备和样品生产方法
公开(公告)号：JP2003022776A
公开(公告)日：2003-01-24
申请号：JP2001204768
申请日：2001-07-05
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOMIMATSU SATOSHI , KOIKE HIDEMI , ISHITANI TORU , SHICHI HIROYASU , KASHIMA HIDEO , FUKUDA MUNEYUKI
IPC分类号： G01N1/28 , H01J37/30 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To provide a sample production apparatus and a sample producing method, in which cross-sectional processing at an arbitrary angle is possible, in the ion beam processing in a non-inclining sample stand.
SOLUTION: The sample production apparatus is constituted so that a sample section may be formed by ion beam processing in the sample 1 held to the sample stand 2 using an ion beam optical system 5 which converges, scans, and deflects the ion beam 4 emitted from the ion source 9. It is constituted so that the angle, which is made by an ion beam optical axis of the ion beam optical system 5 and the sample stand 2 surface, may be fixed, and formation of the sample section may be controlled by rotation within the sample stand surface of the sample stand 2. With the apparatus arrangement by the non- inclining sample stand effective in reduction of apparatus manufacturing cost, the ion beam irradiation processing at arbitrary angles is attained, and an accurate section can be formed.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供在非倾斜样品台中的离子束处理中可以以任意角度进行横截面处理的样品制造装置和样品制造方法。解决方案：样品制备装置被构造成使得可以使用离子束光学系统5使样品1中保持的样品1中的离子束处理形成样品部分，该离子束光学系统5会聚，扫描和偏转从离子源9.它被构造成使得由离子束光学系统5的离子束光轴和样品台2的表面形成的角度可以被固定，并且样品部分的形成可以由在样品台2的样品台表面内的旋转。通过非倾斜样品台的设备布置有效地降低了设备制造成本，实现了任意角度的离子束照射处理，并且可以形成精确的部分。

7. 发明专利

JP2009049021A Minute sample processing observation method and device 有权
标题翻译：分钟样品处理观察方法和装置
公开(公告)号：JP2009049021A
公开(公告)日：2009-03-05
申请号：JP2008305836
申请日：2008-12-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOKUDA MITSUO , FUKUDA MUNEYUKI , MITSUI YASUHIRO , KOIKE HIDEMI , TOMIMATSU SATOSHI , SHICHI HIROYASU
IPC分类号： H01J37/317 , H01J37/20
摘要： PROBLEM TO BE SOLVED: To realize a minute sample processing observation device and a minute sample processing observation method where cross-sectional observation and analysis of a wafer cross section from a horizontal direction up to a vertical direction can be performed with high resolution, high precision and a high throughput, without breaking the wafer to be a sample. SOLUTION: The minute sample processing observation device includes a focused ion beam optical system and an electron optical system in the same vacuum device, as well as a probe separating a minute sample including a desired region of the sample by a charged particle beam molding work and picking up the separated minute sample. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：为了实现微小的样品加工观察装置和微小的样品处理观察方法，其可以以高分辨率进行从水平方向直到垂直方向的晶片横截面的横截面观察和分析，高精度和高产量，而不破坏晶片成为样品。解决方案：微小样品处理观察装置包括聚焦离子束光学系统和同一真空装置中的电子光学系统，以及通过带电粒子束分离包含样品所需区域的微小样品的探针成型工作并拾取分离的分样。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008004569A Electrostatic charge neutralization control method and charged particle beam device using it 审中-公开
标题翻译：静电充电中和控制方法和使用它的充电颗粒光束装置
公开(公告)号：JP2008004569A
公开(公告)日：2008-01-10
申请号：JP2007249310
申请日：2007-09-26
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： FUKUDA MUNEYUKI , SHICHI HIROYASU , TOMIMATSU SATOSHI
IPC分类号： H01J37/20 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide a charged particle beam device of high efficiency for overall analysis and sample creation by providing a reliable charging controlling technology, while eliminating a process requiring experience and skill to control charging on a sample surface including an insulator.
SOLUTION: The charged particle beam device is equipped with a charged particle source (1), charged particle optical systems (5, 6) converging and deflecting charged particle beams (11) emitted from the charged particle source, a detector (9) irradiating charged particle beams on a sample (8) and detecting secondary particles from the sample, and a sample stand (7) for mounting the sample. It comprises a neutralization electrode (20) provided movably against a surface of the sample stand and a neutralization electrode control device (10) for controlling movement of the neutralization electrode and voltage applied to the same, charge is neutralized and controlled by generating charge exchange or current between the neutralization electrode and the irradiation area on the sample charged by irradiation of charged particle beams.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种高效率的带电粒子束装置，通过提供可靠的充电控制技术进行总体分析和样品制作，同时消除了需要经验和技能来控制包含绝缘体的样品表面的充电的工艺。带电粒子束装置装有带电粒子源（1），带电粒子光学系统（5,6）会聚和偏转从带电粒子源发射的带电粒子束（11），检测器（9））将样品（8）上的带电粒子束照射并从样品中检测二次粒子，以及用于安装样品的样品台（7）。其包括可移动地抵靠样品台的表面设置的中和电极（20）和用于控制中和电极的运动和施加到其上的电压的中和电极控制装置（10），通过产生电荷交换来中和并控制电荷，中和电极与通过照射带电粒子束而充电的样品上的照射区域之间的电流。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2006119150A Sample preparation device 有权
标题翻译：样品制备装置
公开(公告)号：JP2006119150A
公开(公告)日：2006-05-11
申请号：JP2005362596
申请日：2005-12-16
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KASHIMA HIDEO , SHICHI HIROYASU , KOIKE HIDEMI , SUZUKI HIROYUKI , TOMIMATSU SATOSHI , FUKUDA MUNEYUKI , KANASUGI KOJI , YAMAOKA SHOSAKU , SUGAYA MASAKAZU
IPC分类号： G01N1/28 , G01N1/00 , G01N23/04
摘要： PROBLEM TO BE SOLVED: To provide a sample preparation device of small occupied area for large diameter wafers, realizing miniaturization of devices, equipped with an introductory means of a TEM holder, to which test pieces of several microns adhere without pressure increase or contamination in vacuum vessels, and having a sample chamber of the required minimum volume enabling quick observation.
SOLUTION: The sample preparation device comprises a sample stage mounting samples; a charged particle beam irradiating optical system; a secondary particle detecting means for detecting secondary particles generated through irradiation of a charged particle beam; a sample piece separating means for separating sample pieces from the sample; a cassette for storing the sample; a sample transferring means for transferring the sample concerned from the cassette to the sample stage; a sample holder for fixing the sample pieces; a sample mounting section for fixing the sample holder; a cartridge for holding the sample mounting section and having a detachable constitution with a sample stage body section; a cartridge station for housing the cartridge; and a transfer means for transfer the desired cartridge from the cartridge station to the sample stage.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种用于大直径晶片的小占用面积的样品制备装置，实现了具有TEM支架的介绍装置的装置的小型化，其中几微米的试片粘附而没有压力增加，真空容器中的污染，并具有所需最小体积的样品室，可以快速观察。
解决方案：样品制备装置包括样品台安装样品; 带电粒子束照射光学系统; 用于检测通过照射带电粒子束产生的二次粒子的二次粒子检测装置; 用于从样品中分离样品片的样品片分离装置; 用于存储样品的盒; 用于将所述样品从所述盒转移到所述样品台的样品转移装置; 用于固定样品的样品保持器; 用于固定样品保持器的样品安装部分; 用于保持样品安装部分并具有可拆卸构造的样品台体部分的盒; 用于容纳盒的墨盒站; 以及用于将期望的盒从盒站传送到样品台的传送装置。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2005285776A Method and apparatus for observing processing of minute sample 有权
标题翻译：用于观察分钟采样处理的方法和装置
公开(公告)号：JP2005285776A
公开(公告)日：2005-10-13
申请号：JP2005107007
申请日：2005-04-04
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOKUDA MITSUO , FUKUDA MUNEYUKI , MITSUI YASUHIRO , KOIKE HIDEMI , TOMIMATSU SATOSHI , SHICHI HIROYASU
IPC分类号： G01N23/225 , H01J37/20 , H01J37/28 , H01J37/30 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for observing the processing of a minute sample where the cross-sectional observation and analysis of a wafer cross section from a horizontal direction to a vertical direction can be performed with a high resolution, high precision and high throughput, without breaking a wafer being the sample.
SOLUTION: This apparatus is provided with a focused ion beam optical system and an electron optical system in the same vacuum device, and provided with a probe separating a minute sample including the desired area of the sample by charged particle beam molding processing and picking up the separated minute sample.
COPYRIGHT: (C)2006,JPO&NCIPI

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