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1. 发明授权

US08920564B2 Methods and apparatus for thermal based substrate processing with variable temperature capability 有权
标题翻译：具有可变温度能力的基于热处理基板的方法和装置
公开(公告)号：US08920564B2
公开(公告)日：2014-12-30
申请号：US13169373
申请日：2011-06-27
申请人： Gwo-Chuan Tzu , Xiaoxiong Yuan , Amit Khandelwal , Benjamin Cheng Wang , Avgerinos V. Gelatos , Kai Wu , Michael P. Karazim , Jing Lin , Olkan Cuvalci
发明人： Gwo-Chuan Tzu , Xiaoxiong Yuan , Amit Khandelwal , Benjamin Cheng Wang , Avgerinos V. Gelatos , Kai Wu , Michael P. Karazim , Jing Lin , Olkan Cuvalci
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455 , C23C16/52 , C23C16/458 , C23C16/46
CPC分类号： C23C16/4412 , C23C16/45565 , C23C16/45587 , C23C16/4585 , C23C16/46 , C23C16/52
摘要： A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.
摘要翻译：衬底支撑件可以包括主体; 围绕身体设置的内圈; 围绕所述内圈设置的外圈，在其间形成第一开口; 设置在所述第一开口上方的第一密封环; 设置在所述内圈上方的从所述外圈向内延伸并在所述阴影和外圈之间形成第二开口的阴影环; 设置在所述第二开口上方的第二密封环; 至少部分地由身体和内，外，第一，第二和第二和阴影环限定的空间; 限定在衬底的处理表面和阴影环之间的第一间隙; 以及流体耦合到所述空间的多个第二间隙; 其中所述第一间隙和所述多个第二间隙被配置为使得当存在基板时，设置到所述空间的气体通过所述第一间隙流出所述空间。

2. 发明授权

US09783889B2 Apparatus for variable substrate temperature control 有权
公开(公告)号：US09783889B2
公开(公告)日：2017-10-10
申请号：US13430278
申请日：2012-03-26
申请人： Gwo-Chuan Tzu , Xiaoxiong Yuan , Amit Khandelwal , Avgerinos V. Gelatos , Olkan Cuvalci , Kai Wu , Michael P. Karazim
发明人： Gwo-Chuan Tzu , Xiaoxiong Yuan , Amit Khandelwal , Avgerinos V. Gelatos , Olkan Cuvalci , Kai Wu , Michael P. Karazim
IPC分类号： C23C16/458 , C23C16/46 , C23C16/455 , C23C16/48 , C23C16/52
CPC分类号： C23C16/46 , C23C16/45565 , C23C16/4583 , C23C16/4585 , C23C16/4586 , C23C16/481 , C23C16/52
摘要： In some embodiments, an apparatus for variable substrate temperature control may include a heater moveable along a central axis of a substrate support; a seal ring disposed about the heater, the seal ring configured to interface with a shadow ring disposed above the heater to form a seal; a plurality of spacer pins configured to support a substrate and disposed within a plurality of through holes formed in the heater, the plurality of spacer pins moveable parallel to the central axis, wherein the plurality of spacer pins control a first distance between the substrate and the heater and a second distance between the substrate and the shadow ring; and a resilient element disposed beneath the seal ring to bias the seal ring toward a backside surface of the heater.

3. 发明授权

US09490150B2 Substrate support for substrate backside contamination control 有权
标题翻译：底物支撑底物污染控制
公开(公告)号：US09490150B2
公开(公告)日：2016-11-08
申请号：US13540710
申请日：2012-07-03
申请人： Gwo-Chuan Tzu , Olkan Cuvalci , Yu Chang , Xiaoxiong Yuan
发明人： Gwo-Chuan Tzu , Olkan Cuvalci , Yu Chang , Xiaoxiong Yuan
IPC分类号： H01L21/67 , H05B3/14 , H01L21/687
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6875 , H05B3/143
摘要： Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a first aluminum plate for supporting a substrate, the first aluminum plate having a plurality of heating elements embedded therein to provide a plurality of heating zones; a second aluminum plate disposed beneath and supporting the first aluminum plate; a third aluminum plate disposed beneath and supporting the second aluminum plate; a non-metallic ring disposed atop the first aluminum plate; and a plurality of spacers having an upper portion disposed above a surface of the first aluminum plate, wherein the non-metallic ring and the plurality of spacers support the substrate above the first aluminum plate.
摘要翻译：本文提供了基板支撑件的实施例。在一些实施例中，衬底支撑件可以包括用于支撑衬底的第一铝板，所述第一铝板具有嵌入其中的多个加热元件以提供多个加热区域; 设置在第一铝板下方并支撑第一铝板的第二铝板; 设置在第二铝板下方并支撑第二铝板的第三铝板; 设置在第一铝板顶上的非金属环; 以及多个间隔件，其具有设置在所述第一铝板的表面上方的上部，其中所述非金属环和所述多个间隔件将所述基板支撑在所述第一铝板的上方。

4. 发明授权

US08618446B2 Substrate support with substrate heater and symmetric RF return 有权
标题翻译：衬底支撑与衬底加热器和对称RF返回
公开(公告)号：US08618446B2
公开(公告)日：2013-12-31
申请号：US13173471
申请日：2011-06-30
申请人： Yu Chang , Gwo-Chuan Tzu , Anqing Cui , William W. Kuang , Olkan Cuvalci
发明人： Yu Chang , Gwo-Chuan Tzu , Anqing Cui , William W. Kuang , Olkan Cuvalci
IPC分类号： A21B1/00 , C23C16/00
CPC分类号： F27B17/0025 , H01J37/32091 , H01J37/32715 , H01L21/67103 , H01L21/67248
摘要： Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a substrate support surface and a shaft; an RF electrode disposed in the substrate support proximate the substrate support surface to receive RF current from an RF source; a heater disposed proximate the substrate support surface to provide heat to a substrate when disposed on the substrate support surface, the heater having one or more conductive lines to provide power to the heater; a thermocouple to measure the temperature of a substrate when disposed on the substrate support surface; and a conductive element having an interior volume with the one or more conductive lines and the thermocouple disposed through the interior volume, the conductive element coupled to the RF electrode and having an electric field of about zero in the interior volume when RF current is flowed through the conductive element.
摘要翻译：本文提供了用于处理基板的装置。在一些实施例中，衬底支撑件包括衬底支撑表面和轴; 设置在所述衬底支撑件中的RF电极，靠近所述衬底支撑表面以从RF源接收RF电流; 设置在所述基板支撑表面附近的加热器，以在设置在所述基板支撑表面上时向所述基板提供热量，所述加热器具有一个或多个导线以向所述加热器提供电力; 当设置在基板支撑表面上时测量基板的温度的热电偶; 以及具有内部体积的导电元件，所述一个或多个导电线和所述热电偶设置穿过所述内部体积，所述导电元件耦合到所述RF电极，并且当RF电流流过所述内部体积时具有约零的电场导电元件。

5. 发明申请

US20140174362A1 Apparatus And Methods For Symmetrical Gas Distribution With High Purge Efficiency 审中-公开
标题翻译：具有高净化效率的对称气体分布的装置和方法
公开(公告)号：US20140174362A1
公开(公告)日：2014-06-26
申请号：US14133813
申请日：2013-12-19
申请人： Chien-Teh Kao , Mei Chang , Hyman Lam , Joel M. Huston , Xiaoxiong Yuan , Olkan Cuvalci
发明人： Chien-Teh Kao , Mei Chang , Hyman Lam , Joel M. Huston , Xiaoxiong Yuan , Olkan Cuvalci
IPC分类号： C23C16/455 , C23C16/50
CPC分类号： C23C16/45565 , C23C16/45536 , C23C16/50
摘要： Provided are apparatus and methods for depositing materials by vapor deposition and plasma enhanced vapor deposition techniques, and more particularly a gas distribution assembly and vapor deposition chamber to deposit a material. The gas distribution assembly comprises a plurality of sections with each section containing a flow channel with passages extending from the flow channel to the processing region of a processing chamber.
摘要翻译：提供了通过气相沉积和等离子体增强气相沉积技术沉积材料的装置和方法，更具体地说，是用于沉积材料的气体分配组件和气相沉积室。气体分配组件包括多个部分，每个部分包含流道，流道从流动通道延伸到处理室的处理区域。

6. 发明授权

US08146896B2 Chemical precursor ampoule for vapor deposition processes 失效
标题翻译：用于气相沉积工艺的化学前体安瓿瓶
公开(公告)号：US08146896B2
公开(公告)日：2012-04-03
申请号：US12263022
申请日：2008-10-31
申请人： Olkan Cuvalci , Dien-Yeh Wu , Xiaoxiong Yuan
发明人： Olkan Cuvalci , Dien-Yeh Wu , Xiaoxiong Yuan
IPC分类号： B01F3/04
CPC分类号： C23C16/4482
摘要： An apparatus for generating a gaseous chemical precursor is provided and contains a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending into the canister and having an inlet end and an outlet end, wherein the inlet end is coupled to the inlet port. The apparatus further contains a gas dispersion plate coupled to the outlet end of the inlet tube, wherein the gas dispersion plate is at an angle within a range from about 3° to about 80°, relative to a horizontal plane which is perpendicular to a vertical axis of the canister.
摘要翻译：提供了一种用于产生气态化学前体的设备，并且包括具有侧壁，顶部和底部的罐的罐，其中包含内部容积，与内部空间流体连通的入口端口和出口端口，进入罐并具有入口端和出口端，其中入口端连接到入口端口。该装置还包括耦合到入口管的出口端的气体分散板，其中气体分散板相对于垂直于垂直方向的水平面处于约3°至约80°的范围内罐的轴线。

7. 发明申请

US20050194374A1 Heated ceramic substrate support with protective coating 审中-公开
标题翻译：加热陶瓷基板支撑与保护涂层
公开(公告)号：US20050194374A1
公开(公告)日：2005-09-08
申请号：US10792054
申请日：2004-03-02
申请人： Avgerinos Gelatos , Olkan Cuvalci , Tong Zhang , Chen-An Chen
发明人： Avgerinos Gelatos , Olkan Cuvalci , Tong Zhang , Chen-An Chen
IPC分类号： H05B3/74
CPC分类号： H05B3/283 , H05B2203/002
摘要： A substrate support comprises a ceramic block, ceramic coating, resistance heater, and heater leads. The ceramic block comprises a first ceramic material and has a substrate receiving pocket sized to receive a substrate, a peripheral ledge extending about the substrate receiving pocket, and side surfaces. The ceramic coating comprises a second ceramic material and covers the substrate pocket and peripheral ledge of the ceramic block. In one version, the second ceramic material is composed of a silicon nitride compound. In another version, the second ceramic material is composed of an amorphous Si—H—N—O compound.
摘要翻译：衬底支撑件包括陶瓷块，陶瓷涂层，电阻加热器和加热器引线。陶瓷块包括第一陶瓷材料并且具有尺寸适于接纳基底的基底接收口袋，围绕基底接收袋延伸的周边凸缘和侧面。陶瓷涂层包括第二陶瓷材料并且覆盖陶瓷块的基底袋和周边凸缘。在一个版本中，第二陶瓷材料由氮化硅化合物组成。在另一种形式中，第二陶瓷材料由非晶Si-H-N-O化合物组成。

8. 发明授权

US09202674B2 Plasma reactor with a ceiling electrode supply conduit having a succession of voltage drop elements 有权
标题翻译：具有天花板电极供应导管的等离子体反应器具有一系列电压降元件
公开(公告)号：US09202674B2
公开(公告)日：2015-12-01
申请号：US12255492
申请日：2008-10-21
申请人： Olkan Cuvalci , Yu Chang , William Kuang , Anqing Cui , Seshadri Ganguli
发明人： Olkan Cuvalci , Yu Chang , William Kuang , Anqing Cui , Seshadri Ganguli
IPC分类号： H01J37/32 , C23C16/455
CPC分类号： H01J37/3244 , C23C16/455 , H01J37/32091 , H01J37/32541
摘要： A bridge assembly includes an electrically insulating hollow tube or bridge having a pair of ends, the bridge being supported at one of the ends over the cylindrical side wall and being supported at the other of the ends over the electrode. The bridge assembly further includes a set of conductive rings surrounding the hollow tube and spaced from one another along the length of the bridge, and plural electrically resistive elements. Each of the resistive elements has a pair of flexible connectors, respective ones the resistive elements connected at their flexible connectors between respective pairs of the rings to form a series resistor assembly.
摘要翻译：桥组件包括具有一对端部的电绝缘中空管或桥，所述桥被支撑在所述圆柱形侧壁上的一端，并且在所述电极的另一端支撑。桥接组件还包括围绕中空管并且沿着桥的长度彼此间隔开的一组导电环，以及多个电阻元件。每个电阻元件具有一对柔性连接器，相应的电阻元件在相应的成对环之间的柔性连接器处连接以形成串联电阻器组件。

9. 发明申请

US20100304027A1 SUBSTRATE PROCESSING SYSTEM AND METHODS THEREOF 审中-公开
标题翻译：基板处理系统及其方法
公开(公告)号：US20100304027A1
公开(公告)日：2010-12-02
申请号：US12789194
申请日：2010-05-27
申请人： Wei Ti Lee , Lai Ta , Srinivas Guggilla , Kevin Moraes , Olkan Cuvalci , Regan Young , John Mazzocco
发明人： Wei Ti Lee , Lai Ta , Srinivas Guggilla , Kevin Moraes , Olkan Cuvalci , Regan Young , John Mazzocco
IPC分类号： C23C16/44 , C23C16/00
CPC分类号： C23C14/568 , C23C14/564 , C23C16/4401 , C23C16/54
摘要： Embodiments of the invention provide methods for processing substrates within a substrate processing system. In one embodiment, the method provides depositing a material on a substrate within a vapor deposition chamber coupled to a buffer chamber contained within a mainframe while maintaining a pressure of about 1×10−6 Torr or lower within a transfer chamber contained within the mainframe. The method further includes transferring the substrate from the vapor deposition chamber to the buffer chamber by a substrate handling robot while flowing a gas into the buffer chamber, evacuating the vapor deposition chamber, and maintaining a greater internal pressure within the buffer chamber than in the vapor deposition chamber. In some embodiments, the method includes transferring the substrate from the transfer chamber to a PVD chamber coupled to the transfer chamber by another substrate handling robot and depositing another material on the substrate within the PVD chamber.
摘要翻译：本发明的实施例提供了在衬底处理系统内处理衬底的方法。在一个实施例中，该方法提供了在包含在主机内的传送室内保持约1×10 -6 Torr或更低的压力的情况下，在耦合到主机内的缓冲室的气相沉积室内的衬底上沉积材料。该方法还包括：在将气体流入缓冲室的同时，通过基板处理机器人将基板从气相沉积室转移到缓冲室，抽空蒸镀室，并在缓冲室内保持比在蒸气中更大的内部压力沉积室。在一些实施例中，该方法包括将衬底从传送室转移到通过另一衬底处理机器人耦合到传送室的PVD室，并将另一材料沉积在PVD室内的衬底上。

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