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1. 发明授权

US09490150B2 Substrate support for substrate backside contamination control 有权
标题翻译：底物支撑底物污染控制
公开(公告)号：US09490150B2
公开(公告)日：2016-11-08
申请号：US13540710
申请日：2012-07-03
申请人： Gwo-Chuan Tzu , Olkan Cuvalci , Yu Chang , Xiaoxiong Yuan
发明人： Gwo-Chuan Tzu , Olkan Cuvalci , Yu Chang , Xiaoxiong Yuan
IPC分类号： H01L21/67 , H05B3/14 , H01L21/687
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6875 , H05B3/143
摘要： Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a first aluminum plate for supporting a substrate, the first aluminum plate having a plurality of heating elements embedded therein to provide a plurality of heating zones; a second aluminum plate disposed beneath and supporting the first aluminum plate; a third aluminum plate disposed beneath and supporting the second aluminum plate; a non-metallic ring disposed atop the first aluminum plate; and a plurality of spacers having an upper portion disposed above a surface of the first aluminum plate, wherein the non-metallic ring and the plurality of spacers support the substrate above the first aluminum plate.
摘要翻译：本文提供了基板支撑件的实施例。在一些实施例中，衬底支撑件可以包括用于支撑衬底的第一铝板，所述第一铝板具有嵌入其中的多个加热元件以提供多个加热区域; 设置在第一铝板下方并支撑第一铝板的第二铝板; 设置在第二铝板下方并支撑第二铝板的第三铝板; 设置在第一铝板顶上的非金属环; 以及多个间隔件，其具有设置在所述第一铝板的表面上方的上部，其中所述非金属环和所述多个间隔件将所述基板支撑在所述第一铝板的上方。

2. 发明授权

US09783889B2 Apparatus for variable substrate temperature control 有权
公开(公告)号：US09783889B2
公开(公告)日：2017-10-10
申请号：US13430278
申请日：2012-03-26
申请人： Gwo-Chuan Tzu , Xiaoxiong Yuan , Amit Khandelwal , Avgerinos V. Gelatos , Olkan Cuvalci , Kai Wu , Michael P. Karazim
发明人： Gwo-Chuan Tzu , Xiaoxiong Yuan , Amit Khandelwal , Avgerinos V. Gelatos , Olkan Cuvalci , Kai Wu , Michael P. Karazim
IPC分类号： C23C16/458 , C23C16/46 , C23C16/455 , C23C16/48 , C23C16/52
CPC分类号： C23C16/46 , C23C16/45565 , C23C16/4583 , C23C16/4585 , C23C16/4586 , C23C16/481 , C23C16/52
摘要： In some embodiments, an apparatus for variable substrate temperature control may include a heater moveable along a central axis of a substrate support; a seal ring disposed about the heater, the seal ring configured to interface with a shadow ring disposed above the heater to form a seal; a plurality of spacer pins configured to support a substrate and disposed within a plurality of through holes formed in the heater, the plurality of spacer pins moveable parallel to the central axis, wherein the plurality of spacer pins control a first distance between the substrate and the heater and a second distance between the substrate and the shadow ring; and a resilient element disposed beneath the seal ring to bias the seal ring toward a backside surface of the heater.

3. 发明授权

US08920564B2 Methods and apparatus for thermal based substrate processing with variable temperature capability 有权
标题翻译：具有可变温度能力的基于热处理基板的方法和装置
公开(公告)号：US08920564B2
公开(公告)日：2014-12-30
申请号：US13169373
申请日：2011-06-27
申请人： Gwo-Chuan Tzu , Xiaoxiong Yuan , Amit Khandelwal , Benjamin Cheng Wang , Avgerinos V. Gelatos , Kai Wu , Michael P. Karazim , Jing Lin , Olkan Cuvalci
发明人： Gwo-Chuan Tzu , Xiaoxiong Yuan , Amit Khandelwal , Benjamin Cheng Wang , Avgerinos V. Gelatos , Kai Wu , Michael P. Karazim , Jing Lin , Olkan Cuvalci
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455 , C23C16/52 , C23C16/458 , C23C16/46
CPC分类号： C23C16/4412 , C23C16/45565 , C23C16/45587 , C23C16/4585 , C23C16/46 , C23C16/52
摘要： A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.
摘要翻译：衬底支撑件可以包括主体; 围绕身体设置的内圈; 围绕所述内圈设置的外圈，在其间形成第一开口; 设置在所述第一开口上方的第一密封环; 设置在所述内圈上方的从所述外圈向内延伸并在所述阴影和外圈之间形成第二开口的阴影环; 设置在所述第二开口上方的第二密封环; 至少部分地由身体和内，外，第一，第二和第二和阴影环限定的空间; 限定在衬底的处理表面和阴影环之间的第一间隙; 以及流体耦合到所述空间的多个第二间隙; 其中所述第一间隙和所述多个第二间隙被配置为使得当存在基板时，设置到所述空间的气体通过所述第一间隙流出所述空间。

4. 发明申请

US20060130971A1 Apparatus for generating plasma by RF power 审中-公开
标题翻译：用于通过RF功率产生等离子体的装置
公开(公告)号：US20060130971A1
公开(公告)日：2006-06-22
申请号：US11137200
申请日：2005-05-24
申请人： Yu Chang , Gwo-Chuan Tzu , Salvador Umotoy , Chien-Teh Kao , William Kuang , Xiaoxiong Yuan , Mei Chang
发明人： Yu Chang , Gwo-Chuan Tzu , Salvador Umotoy , Chien-Teh Kao , William Kuang , Xiaoxiong Yuan , Mei Chang
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/31116 , H01J37/32082 , H01J37/32357 , H01J37/32541 , H01L21/28247 , H01L21/67069 , H01L29/665
摘要： A method and apparatus for processing a substrate is provided. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body adapted to support a substrate thereon. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a top plate and a gas delivery assembly which define a plasma cavity therebetween, wherein the gas delivery assembly is adapted to heat the substrate. A remote plasma source having a U-shaped plasma region is connected to the gas delivery assembly.
摘要翻译：提供了一种用于处理衬底的方法和设备。在一个方面，所述腔室包括室主体和至少部分地设置在所述腔体内的适于在其上支撑衬底的支撑组件。所述室还包括设置在所述室主体的上表面上的盖组件。盖组件包括顶板和在其间限定等离子体腔的气体输送组件，其中气体输送组件适于加热衬底。具有U形等离子体区域的远程等离子体源连接到气体输送组件。

5. 发明申请

US20080206987A1 PROCESS FOR TUNGSTEN NITRIDE DEPOSITION BY A TEMPERATURE CONTROLLED LID ASSEMBLY 审中-公开
标题翻译：通过温度控制的盖组件对硝酸镍沉积的方法
公开(公告)号：US20080206987A1
公开(公告)日：2008-08-28
申请号：US12021798
申请日：2008-01-29
申请人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
发明人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
IPC分类号： H01L21/44
CPC分类号： C23C16/14 , C23C16/34 , C23C16/4401 , C23C16/4411 , C23C16/45512 , C23C16/45523
摘要： Embodiments of the invention provide processes for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a method for forming a tungsten-containing material is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, and depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber. The method further provides depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.
摘要翻译：本发明的实施方案提供了诸如金属钨和氮化钨的含钨材料的气相沉积方法。在一个实施例中，提供了一种用于形成含钨材料的方法，其包括将衬底定位在包含盖板的处理室内，将盖板加热至约120℃至约180℃的温度在预成核浸泡工艺期间将衬底暴露于还原气体，以及在处理室内的第一原子层沉积工艺期间在衬底上沉积第一钨成核层。该方法还提供了在气相沉积工艺期间在第一钨成核层上沉积氮化钨层，在处理室内的第二原子层沉积工艺期间在氮化钨层上沉积第二钨成核层，并将衬底暴露于另一个在后成核浸泡过程中还原气体。

6. 发明申请

US20080202425A1 TEMPERATURE CONTROLLED LID ASSEMBLY FOR TUNGSTEN NITRIDE DEPOSITION 有权
标题翻译：用于硝酸铁沉积的温度控制组件
公开(公告)号：US20080202425A1
公开(公告)日：2008-08-28
申请号：US12021825
申请日：2008-01-29
申请人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
发明人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
IPC分类号： C23C16/06
CPC分类号： C23C16/14 , C23C16/34 , C23C16/4401 , C23C16/4411 , C23C16/45512 , C23C16/45523
摘要： Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.
摘要翻译：本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

7. 发明授权

US08821637B2 Temperature controlled lid assembly for tungsten nitride deposition 有权
标题翻译：用于氮化钨沉积的温度控制盖组件
公开(公告)号：US08821637B2
公开(公告)日：2014-09-02
申请号：US12021825
申请日：2008-01-29
申请人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
发明人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C16/14 , C23C16/34 , C23C16/4401 , C23C16/4411 , C23C16/45512 , C23C16/45523
摘要： Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.
摘要翻译：本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

8. 发明申请

US20140174362A1 Apparatus And Methods For Symmetrical Gas Distribution With High Purge Efficiency 审中-公开
标题翻译：具有高净化效率的对称气体分布的装置和方法
公开(公告)号：US20140174362A1
公开(公告)日：2014-06-26
申请号：US14133813
申请日：2013-12-19
申请人： Chien-Teh Kao , Mei Chang , Hyman Lam , Joel M. Huston , Xiaoxiong Yuan , Olkan Cuvalci
发明人： Chien-Teh Kao , Mei Chang , Hyman Lam , Joel M. Huston , Xiaoxiong Yuan , Olkan Cuvalci
IPC分类号： C23C16/455 , C23C16/50
CPC分类号： C23C16/45565 , C23C16/45536 , C23C16/50
摘要： Provided are apparatus and methods for depositing materials by vapor deposition and plasma enhanced vapor deposition techniques, and more particularly a gas distribution assembly and vapor deposition chamber to deposit a material. The gas distribution assembly comprises a plurality of sections with each section containing a flow channel with passages extending from the flow channel to the processing region of a processing chamber.
摘要翻译：提供了通过气相沉积和等离子体增强气相沉积技术沉积材料的装置和方法，更具体地说，是用于沉积材料的气体分配组件和气相沉积室。气体分配组件包括多个部分，每个部分包含流道，流道从流动通道延伸到处理室的处理区域。

9. 发明授权

US08146896B2 Chemical precursor ampoule for vapor deposition processes 失效
标题翻译：用于气相沉积工艺的化学前体安瓿瓶
公开(公告)号：US08146896B2
公开(公告)日：2012-04-03
申请号：US12263022
申请日：2008-10-31
申请人： Olkan Cuvalci , Dien-Yeh Wu , Xiaoxiong Yuan
发明人： Olkan Cuvalci , Dien-Yeh Wu , Xiaoxiong Yuan
IPC分类号： B01F3/04
CPC分类号： C23C16/4482
摘要： An apparatus for generating a gaseous chemical precursor is provided and contains a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending into the canister and having an inlet end and an outlet end, wherein the inlet end is coupled to the inlet port. The apparatus further contains a gas dispersion plate coupled to the outlet end of the inlet tube, wherein the gas dispersion plate is at an angle within a range from about 3° to about 80°, relative to a horizontal plane which is perpendicular to a vertical axis of the canister.
摘要翻译：提供了一种用于产生气态化学前体的设备，并且包括具有侧壁，顶部和底部的罐的罐，其中包含内部容积，与内部空间流体连通的入口端口和出口端口，进入罐并具有入口端和出口端，其中入口端连接到入口端口。该装置还包括耦合到入口管的出口端的气体分散板，其中气体分散板相对于垂直于垂直方向的水平面处于约3°至约80°的范围内罐的轴线。

10. 发明申请

US20070040265A1 Substrate support having brazed plates and resistance heater 有权
标题翻译：具有钎焊板和电阻加热器的基板支撑
公开(公告)号：US20070040265A1
公开(公告)日：2007-02-22
申请号：US11506460
申请日：2006-08-17
申请人： Salvador Umotoy , Lawrence Lei , Gwo-Chuan Tzu , Xiaoxiong Yuan , Michael Jackson , Hymam Lam
发明人： Salvador Umotoy , Lawrence Lei , Gwo-Chuan Tzu , Xiaoxiong Yuan , Michael Jackson , Hymam Lam
IPC分类号： H01L23/12
CPC分类号： H01L21/67103 , C23C16/45521 , C23C16/4586 , C23C16/466 , H01L21/6838 , H01L21/68735 , H01L21/6875 , H01L21/68785
摘要： A substrate support comprises top, middle and bottom plates which are brazed together. The top plate has a top surface with a plurality of outwardly projecting mesas dispersed across a recessed pocket, a network of recessed grooves, a vacuum port terminating in the recessed grooves, and plurality of gas ports. The middle plate has a plurality of middle feedthroughs aligned to corresponding top feedthroughs of the top plate, and the bottom plate has a plurality of bottom feedthroughs aligned to the middle feedthroughs of the middle plate. The top and middle plates are joined by a first brazed bond layer and the middle and bottom plates are joined by a second brazed bond layer.
摘要翻译：衬底支撑件包括钎焊在一起的顶板，中板和底板。顶板具有顶表面，多个向外突出的台面分散在凹槽中，凹槽网络，终止于凹槽中的真空端口以及多个气体端口。中间板具有与顶板的相应的顶部馈通对准的多个中间馈通，并且底板具有与中间板的中间馈通对准的多个底部馈通。顶板和中间板通过第一钎焊接合层连接，中间和底板通过第二钎焊接合层连接。

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