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1. 发明申请

US20120171953A1 RF IDENTIFICATION DEVICE WITH NEAR-FIELD-COUPLED ANTENNA 审中-公开
标题翻译：具有近场耦合天线的射频识别装置
公开(公告)号：US20120171953A1
公开(公告)日：2012-07-05
申请号：US13415760
申请日：2012-03-08
申请人： Alessandro Finocchiaro , Giovanni Girlando , Giuseppe Palmisano , Giuseppe Ferla , Alberto Pagani
发明人： Alessandro Finocchiaro , Giovanni Girlando , Giuseppe Palmisano , Giuseppe Ferla , Alberto Pagani
IPC分类号： H04B5/00
CPC分类号： H04B5/00 , H01L23/66 , H01L24/73 , H01L25/0655 , H01L25/0657 , H01L2223/6677 , H01L2224/48091 , H01L2225/06531 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H04B5/0031 , H04B5/0037 , H04B5/0081 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An embodiment of a RF identification device is formed by a tag and by a reader. The tag is formed by a processing circuit and a first antenna, which has the function both of transmitting and of receiving data. The reader is formed by a control circuit and by a second antenna, which has the function both of transmitting and of receiving data. The processing circuit is formed by a resonance capacitor, a modulator, a rectifier circuit, a charge-pump circuit and a detection circuit. The antenna of the tag and the processing circuit are integrated in a single structure in completely monolithic form. The first antenna has terminals connected to the input of the rectifier circuit, the output of which is connected to the charge-pump circuit. The charge-pump circuit has an output connected to the detection circuit.
摘要翻译： RF识别装置的实施例由标签和读取器形成。标签由具有发送和接收数据功能的处理电路和第一天线形成。读取器由控制电路和具有发送和接收数据功能的第二天线形成。处理电路由谐振电容器，调制器，整流电路，电荷泵电路和检测电路构成。标签和处理电路的天线以完全整体的形式集成在单个结构中。第一天线具有连接到整流电路的输入的端子，其输出端连接到电荷泵电路。电荷泵电路具有连接到检测电路的输出。

2. 发明申请

US20120168520A1 RF IDENTIFICATION DEVICE WITH NEAR-FIELD-COUPLED ANTENNA 审中-公开
公开(公告)号：US20120168520A1
公开(公告)日：2012-07-05
申请号：US13415693
申请日：2012-03-08
申请人： Alessandro Finocchiaro , Giovanni Girlando , Giuseppe Palmisano , Giuseppe Ferla , Alberto Pagani
发明人： Alessandro Finocchiaro , Giovanni Girlando , Giuseppe Palmisano , Giuseppe Ferla , Alberto Pagani
IPC分类号： G06K19/073
CPC分类号： H04B5/00 , H01L23/66 , H01L24/73 , H01L25/0655 , H01L25/0657 , H01L2223/6677 , H01L2224/48091 , H01L2225/06531 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H04B5/0031 , H04B5/0037 , H04B5/0081 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An embodiment of a RF identification device is formed by a tag and by a reader. The tag is formed by a processing circuit and a first antenna, which has the function both of transmitting and of receiving data. The reader is formed by a control circuit and by a second antenna, which has the function both of transmitting and of receiving data. The processing circuit is formed by a resonance capacitor, a modulator, a rectifier circuit, a charge-pump circuit and a detection circuit. The antenna of the tag and the processing circuit are integrated in a single structure in completely monolithic form. The first antenna has terminals connected to the input of the rectifier circuit, the output of which is connected to the charge-pump circuit. The charge-pump circuit has an output connected to the detection circuit.

3. 发明授权

US09191072B2 RF identification device with near-field-coupled antenna 有权
公开(公告)号：US09191072B2
公开(公告)日：2015-11-17
申请号：US13415693
申请日：2012-03-08
申请人： Alessandro Finocchiaro , Giovanni Girlando , Giuseppe Palmisano , Giuseppe Ferla , Alberto Pagani
发明人： Alessandro Finocchiaro , Giovanni Girlando , Giuseppe Palmisano , Giuseppe Ferla , Alberto Pagani
IPC分类号： G08B13/14 , H04B5/00 , H01L23/66 , H01L25/065 , H01L23/00
CPC分类号： H04B5/00 , H01L23/66 , H01L24/73 , H01L25/0655 , H01L25/0657 , H01L2223/6677 , H01L2224/48091 , H01L2225/06531 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H04B5/0031 , H04B5/0037 , H04B5/0081 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An embodiment of a RF identification device is formed by a tag and by a reader. The tag is formed by a processing circuit and a first antenna, which has the function both of transmitting and of receiving data. The reader is formed by a control circuit and by a second antenna, which has the function both of transmitting and of receiving data. The processing circuit is formed by a resonance capacitor, a modulator, a rectifier circuit, a charge-pump circuit and a detection circuit. The antenna of the tag and the processing circuit are integrated in a single structure in completely monolithic form. The first antenna has terminals connected to the input of the rectifier circuit, the output of which is connected to the charge-pump circuit. The charge-pump circuit has an output connected to the detection circuit.

4. 发明授权

US09154188B2 RF identification device with near-field-coupled antenna 有权
标题翻译：具有近场耦合天线的RF识别装置
公开(公告)号：US09154188B2
公开(公告)日：2015-10-06
申请号：US12182893
申请日：2008-07-30
申请人： Alessandro Finocchiaro , Giovanni Girlando , Giuseppe Palmisano , Giuseppe Ferla , Alberto Pagani
发明人： Alessandro Finocchiaro , Giovanni Girlando , Giuseppe Palmisano , Giuseppe Ferla , Alberto Pagani
IPC分类号： G08B23/00 , H04B5/00 , H01L23/66 , H01L25/065 , H01L23/00
CPC分类号： H04B5/00 , H01L23/66 , H01L24/73 , H01L25/0655 , H01L25/0657 , H01L2223/6677 , H01L2224/48091 , H01L2225/06531 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H04B5/0031 , H04B5/0037 , H04B5/0081 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An embodiment of a RF identification device is formed by a tag and by a reader. The tag is formed by a processing circuit and a first antenna, which has the function both of transmitting and of receiving data. The reader is formed by a control circuit and by a second antenna, which has the function both of transmitting and of receiving data. The processing circuit is formed by a resonance capacitor, a modulator, a rectifier circuit, a charge-pump circuit and a detection circuit. The antenna of the tag and the processing circuit are integrated in a single structure in completely monolithic form. The first antenna has terminals connected to the input of the rectifier circuit, the output of which is connected to the charge-pump circuit. The charge-pump circuit has an output connected to the detection circuit.
摘要翻译： RF识别装置的实施例由标签和读取器形成。标签由具有发送和接收数据功能的处理电路和第一天线形成。读取器由控制电路和具有发送和接收数据功能的第二天线形成。处理电路由谐振电容器，调制器，整流电路，电荷泵电路和检测电路构成。标签和处理电路的天线以完全整体的形式集成在单个结构中。第一天线具有连接到整流电路的输入的端子，其输出端连接到电荷泵电路。电荷泵电路具有连接到检测电路的输出。

5. 发明授权

US06278329B1 Low-noise amplifier stage with matching network 有权
标题翻译：具有匹配网络的低噪声放大器级
公开(公告)号：US06278329B1
公开(公告)日：2001-08-21
申请号：US09466573
申请日：1999-12-21
申请人： Giuseppe Palmisano , Giuseppe Ferla , Giovanni Girlando
发明人： Giuseppe Palmisano , Giuseppe Ferla , Giovanni Girlando
IPC分类号： H03F304
CPC分类号： H03F1/22 , H03F1/565 , H03F2200/294 , H03F2200/372
摘要： An amplifier stage having a first and a second transistor connected in series to each other between a first and a second reference potential line. The first transistor has a control terminal connected to an input of the amplifier stage through a first inductor, a first terminal connected to the second reference potential line through a second inductor, and a third terminal connected to a first terminal of the second transistor. The second transistor has a second terminal forming an output of the amplifier stage, and connected to the first reference potential line through a load resistor. To improve the noise figure, a matching capacitor is connected between the control terminal and the first terminal of the first transistor.
摘要翻译：具有在第一和第二参考电位线之间彼此串联连接的第一和第二晶体管的放大器级。第一晶体管具有通过第一电感器连接到放大器级的输入的控制端子，通过第二电感器连接到第二参考电位线的第一端子和连接到第二晶体管的第一端子的第三端子。第二晶体管具有形成放大器级的输出的第二端子，并通过负载电阻器连接到第一参考电位线。为了提高噪声系数，在控制端子与第一晶体管的第一端子之间连接有匹配电容器。

6. 发明申请

US20090033467A1 RF IDENTIFICATION DEVICE WITH NEAR-FIELD-COUPLED ANTENNA 有权
标题翻译：具有近场耦合天线的射频识别装置
公开(公告)号：US20090033467A1
公开(公告)日：2009-02-05
申请号：US12182893
申请日：2008-07-30
申请人： Alessandro Finocchiaro , Giovanni Girlando , Giuseppe Palmisano , Giuseppe Ferla , Alberto Pagani
发明人： Alessandro Finocchiaro , Giovanni Girlando , Giuseppe Palmisano , Giuseppe Ferla , Alberto Pagani
IPC分类号： H04Q5/22 , H04B5/00 , H04B17/00
CPC分类号： H04B5/00 , H01L23/66 , H01L24/73 , H01L25/0655 , H01L25/0657 , H01L2223/6677 , H01L2224/48091 , H01L2225/06531 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H04B5/0031 , H04B5/0037 , H04B5/0081 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An embodiment of a RF identification device is formed by a tag and by a reader. The tag is formed by a processing circuit and a first antenna, which has the function both of transmitting and of receiving data. The reader is formed by a control circuit and by a second antenna, which has the function both of transmitting and of receiving data. The processing circuit is formed by a resonance capacitor, a modulator, a rectifier circuit, a charge-pump circuit and a detection circuit. The antenna of the tag and the processing circuit are integrated in a single structure in completely monolithic form. The first antenna has terminals connected to the input of the rectifier circuit, the output of which is connected to the charge-pump circuit. The charge-pump circuit has an output connected to the detection circuit.
摘要翻译： RF识别装置的实施例由标签和读取器形成。标签由具有发送和接收数据功能的处理电路和第一天线形成。读取器由控制电路和具有发送和接收数据功能的第二天线形成。处理电路由谐振电容器，调制器，整流电路，电荷泵电路和检测电路构成。标签和处理电路的天线以完全整体的形式集成在单个结构中。第一天线具有连接到整流电路的输入的端子，其输出端连接到电荷泵电路。电荷泵电路具有连接到检测电路的输出。

7. 发明申请

US20110081759A1 POWER MOS ELECTRONIC DEVICE AND CORRESPONDING REALIZING METHOD 有权
公开(公告)号：US20110081759A1
公开(公告)日：2011-04-07
申请号：US12967845
申请日：2010-12-14
申请人： Angelo Magri , Ferruccio Frisina , Giuseppe Ferla
发明人： Angelo Magri , Ferruccio Frisina , Giuseppe Ferla
IPC分类号： H01L21/8232
CPC分类号： H01L29/7802 , H01L29/4238 , H01L29/4916 , H01L29/4933 , H01L29/4983
摘要： Power MOS device of the type comprising a plurality of elementary power MOS transistors having respective gate structures and comprising a gate oxide with double thickness having a thick central part and lateral portions of reduced thickness. Such device exhibiting gate structures comprising first gate conductive portions overlapped onto said lateral portions of reduced thickness to define, for the elementary MOS transistors, the gate electrodes, as well as a conductive structure or mesh. Such conductive structure comprising a plurality of second conductive portions overlapped onto the thick central part of gate oxide and interconnected to each other and to the first gate conductive portions by means of a plurality of conducive bridges.

8. 发明申请

US20090321826A1 METHOD FOR MANUFACTURING A HIGH INTEGRATION DENSITY POWER MOS DEVICE 有权
标题翻译：用于制造高集成度密度功率MOS器件的方法
公开(公告)号：US20090321826A1
公开(公告)日：2009-12-31
申请号：US12551999
申请日：2009-09-01
申请人： Giuseppe ARENA , Giuseppe Ferla , Marco Camalleri
发明人： Giuseppe ARENA , Giuseppe Ferla , Marco Camalleri
IPC分类号： H01L29/78
CPC分类号： H01L29/7802 , H01L21/2815 , H01L29/42372 , H01L29/42376 , H01L29/4238 , H01L29/4933 , H01L29/66712
摘要： A process for the realization of a high integration density power MOS device includes the following steps of: providing a doped semiconductor substrate with a first type of conductivity; forming, on the substrate, a semiconductor layer with lower conductivity; forming, on the semiconductor layer, a dielectric layer of thickness comprised between 3000 and 13000 A (Angstroms); depositing, on the dielectric layer, a hard mask layer; masking the hard mask layer by means of a masking layer; etching the hard mask layers and the underlying dielectric layer for defining a plurality of hard mask portions to protect said dielectric layer; removing the masking layer; isotropically and laterally etching said dielectric layer forming lateral cavities in said dielectric layer below said hard mask portions; forming a gate oxide of thickness comprised between 150 and 1500 A (Angstroms) depositing a conductor material in said cavities and above the same to form a recess spacer, which is totally aligned with a gate structure comprising said thick dielectric layer and said gate oxide.
摘要翻译：用于实现高集成度功率MOS器件的方法包括以下步骤：提供具有第一类型导电性的掺杂半导体衬底; 在所述基板上形成具有较低导电率的半导体层; 在半导体层上形成厚度介于3000和13000A（埃）之间的介电层; 在电介质层上沉积硬掩模层; 通过掩模层掩蔽硬掩模层; 蚀刻硬掩模层和下面的介电层以限定多个硬掩模部分以保护所述介电层; 去除掩蔽层; 各向同性和横向蚀刻所述介电层，在所述硬掩模部分下面的所述介电层中形成横向空腔; 形成厚度为150至1500A（埃）的栅极氧化物，其在所述空腔中沉积导体材料并且在其上方，以形成与包括所述厚介电层和所述栅极氧化物的栅极结构完全对准的凹陷间隔物。

9. 发明授权

US07569883B2 Switching-controlled power MOS electronic device 有权
标题翻译：开关控制功率MOS电子器件
公开(公告)号：US07569883B2
公开(公告)日：2009-08-04
申请号：US11285759
申请日：2005-11-21
申请人： Ferruccio Frisina , Giuseppe Ferla , Angelo Magri , Antonio Giuseppe Grimaldi , Gaetano Bazzano
发明人： Ferruccio Frisina , Giuseppe Ferla , Angelo Magri , Antonio Giuseppe Grimaldi , Gaetano Bazzano
IPC分类号： H01L29/76 , H01L29/94 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/4238 , H01L29/4916 , H01L29/4933 , H01L29/4983
摘要： Power electronic MOS device of the type comprising a plurality of elementary power MOS transistors and a gate structure comprising a plurality of conductive strips realized with a first conductive material such as polysilicon, a plurality of gate fingers or metallic tracks connected to a gate pad and at least a connection layer arranged in series to at least one of said conductive strip. Such gate structure comprising at least a plurality of independent islands formed on the upper surface of the conductive strips and suitably formed on the connection layers. Said islands being realized with at least one second conductive material such as silicide.
摘要翻译：这种类型的功率电子MOS器件包括多个基本功率MOS晶体管和一个栅极结构，该栅极结构包括由第一导电材料（例如多晶硅），多个栅极指状物或连接到栅极焊盘的金属轨道至少一个与至少一个所述导电带串联布置的连接层。这种门结构包括形成在导电条的上表面上并适当地形成在连接层上的至少多个独立的岛。所述岛通过至少一种第二导电材料如硅化物实现。

10. 发明授权

US06890806B2 Semiconductor integrated electronic device and corresponding manufacturing method 有权
标题翻译：半导体集成电子器件及相应的制造方法
公开(公告)号：US06890806B2
公开(公告)日：2005-05-10
申请号：US10763626
申请日：2004-01-23
申请人： Gianfranco Cerofolini , Giuseppe Ferla
发明人： Gianfranco Cerofolini , Giuseppe Ferla
IPC分类号： H01L21/8247 , H01L21/28 , H01L27/115 , H01L29/51 , H01L29/78 , H01L29/788 , H01L29/792 , H01L51/05 , H01L51/30 , H01L51/40 , H01L21/8234
CPC分类号： H01L21/28167 , H01L29/51
摘要： A method of fabricating a MOS transistor with a controllable and modulatable conduction path through a dielectric gate oxide is disclosed, wherein the transistor structure comprises a dielectric oxide layer formed between two silicon plates, and wherein the silicon plates overhang the oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape. The method comprises the steps of: chemically altering the surfaces of the silicon plates to have different functional groups provided in the undercut from those in the remainder of the surfaces; and selectively reacting the functional groups provided in the undercut with an organic molecule having a reversibly reducible center and a molecular length substantially equal to the width of the undercut, thereby to establish a covalent bond to each end of the organic molecule.
摘要翻译：公开了一种通过电介质栅极氧化物制造具有可控和可调制传导路径的MOS晶体管的方法，其中晶体管结构包括在两个硅板之间形成的电介质氧化物层，并且其中硅板全部悬垂在氧化物层周围以限定具有基本上矩形横截面形状的底切。该方法包括以下步骤：将硅板的表面化学改变成在底切中提供的不同的官能团与其余表面中的不同的官能团; 并且将底切中提供的官能团选择性地与具有可逆还原中心和分子长度基本上等于底切宽度的有机分子反应，从而与有机分子的每个末端建立共价键。

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