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1. 发明授权

US08633572B2 Low ohmic through substrate interconnection for semiconductor carriers 有权
标题翻译：用于半导体载体的低欧姆通过衬底互连
公开(公告)号：US08633572B2
公开(公告)日：2014-01-21
申请号：US12293101
申请日：2007-03-16
申请人： Gereon Vogtmeier , Roger Steadman , Ralf Dorscheid , Jeroen Jonkers
发明人： Gereon Vogtmeier , Roger Steadman , Ralf Dorscheid , Jeroen Jonkers
IPC分类号： H01L29/40
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/05 , H01L2224/131 , H01L2924/014
摘要： It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (600). The TWI comprises a first connection extending between a front surface and a back surface of the substrate (600). The first connection (610) comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection (615) also extending between the front surface and the back surface. The second connection (615) is spatially separated from the first connection (610) by at least a portion of the semiconductor substrate (600). The front surface is provided with a integrated circuit arrangement (620) wherein the first connection (610) is electrically coupled to at least one node of the integrated circuit arrangement (620) without penetrating the integrated circuit arrangement (620). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon. After forming integrated components (620) on top of the front surface the substrate (600) may be thinned and the non-metallic material may be substituted with the low ohmic material, which is in particular a metallic material.
摘要翻译：描述了形成在半导体衬底（600）上的电子芯片的低欧姆通晶片互连（TWI）。 TWI包括在基板（600）的前表面和后表面之间延伸的第一连接。第一连接（610）包括填充有低于多晶硅的比电阻率的低欧姆材料的通孔。 TWI还包括也在前表面和后表面之间延伸的第二连接（615）。第二连接（615）通过半导体衬底（600）的至少一部分在空间上与第一连接（610）分离。前表面设置有集成电路装置（620），其中第一连接（610）电耦合到集成电路装置（620）的至少一个节点而不穿透集成电路装置（620）。在处理TWI期间，通孔可以首先用非金属材料填充，例如，多晶硅。在前表面顶部形成集成组件（620）之后，可以使衬底（600）变薄并且非金属材料可以被低欧姆材料代替，这是特别是金属材料。

2. 发明申请

US20090079021A1 LOW OHMIC THROUGH SUBSTRATE INTERCONNECTION FOR SEMICONDUCTOR CARRIERS 有权
标题翻译：通过半导体载体的基板互连的低OHMIC
公开(公告)号：US20090079021A1
公开(公告)日：2009-03-26
申请号：US12293101
申请日：2007-03-16
申请人： Gereon Vogtmeier , Roger Steadman , Ralf Dorscheid , Jeroen Jonkers
发明人： Gereon Vogtmeier , Roger Steadman , Ralf Dorscheid , Jeroen Jonkers
IPC分类号： H01L31/02 , H01L23/48 , H01L21/44
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/05 , H01L2224/131 , H01L2924/014
摘要： It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (600). The TWI comprises a first connection extending between a front surface and a back surface of the substrate (600). The first connection (610) comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection (615) also extending between the front surface and the back surface. The second connection (615) is spatially separated from the first connection (610) by at least a portion of the semiconductor substrate (600). The front surface is provided with a integrated circuit arrangement (620) wherein the first connection (610) is electrically coupled to at least one node of the integrated circuit arrangement (620) without penetrating the integrated circuit arrangement (620). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon. After forming integrated components (620) on top of the front surface the substrate (600) may be thinned and the non-metallic material may be substituted with the low ohmic material, which is in particular a metallic material.
摘要翻译：描述了形成在半导体衬底（600）上的电子芯片的低欧姆通晶片互连（TWI）。 TWI包括在基板（600）的前表面和后表面之间延伸的第一连接。第一连接（610）包括填充有低于多晶硅的比电阻率的低欧姆材料的通孔。 TWI还包括也在前表面和后表面之间延伸的第二连接（615）。第二连接（615）通过半导体衬底（600）的至少一部分在空间上与第一连接（610）分离。前表面设置有集成电路装置（620），其中第一连接（610）电耦合到集成电路装置（620）的至少一个节点而不穿透集成电路装置（620）。在处理TWI期间，通孔可以首先用非金属材料填充，例如，多晶硅。在前表面顶部形成集成组件（620）之后，可以使衬底（600）变薄并且非金属材料可以被低欧姆材料代替，这是特别是金属材料。

3. 发明申请

US20080230706A1 Modular Device For the Detection and/or Transmission of Radiation 有权
标题翻译：用于辐射检测和/或传输的模块化设备
公开(公告)号：US20080230706A1
公开(公告)日：2008-09-25
申请号：US10599422
申请日：2005-03-22
申请人： Ralf Dorscheid , Gereon Vogtmeier , Roger Steadman
发明人： Ralf Dorscheid , Gereon Vogtmeier , Roger Steadman
IPC分类号： G01T1/166 , G01T1/24 , A61B6/00
CPC分类号： G01T1/2018 , A61B6/032 , A61B6/4233 , A61B6/4291 , A61B6/4411
摘要： The invention relates to a device for the detection and/or transmission of radiation, particularly an X-ray detector 1, that consists of a carrier 10 on which an array of detector modules 20 is arranged. The carrier 10 comprises holes 11 through which a ball at the backside of the detector modules 20 can be inserted in order to fix the modules such that they can still rotate to a certain degree. Due to this freedom, the sensor modules 20 can align themselves during assembly.
摘要翻译：本发明涉及一种用于检测和/或传输辐射的装置，特别是一种X射线检测器1，其由载体10组成，其上布置有检测器模块阵列20。载体10包括孔11，通过该孔11可以插入检测器模块20的后侧的球，以便固定模块，使得它们仍然可以一定程度地旋转。由于这种自由度，传感器模块20可以在组装期间自己对准。

4. 发明授权

US07525097B2 Modular device for the detection and/or transmission of radiation with self-aligning modules 有权
标题翻译：用于利用自对准模块检测和/或传输辐射的模块化设备
公开(公告)号：US07525097B2
公开(公告)日：2009-04-28
申请号：US10599422
申请日：2005-03-22
申请人： Ralf Dorscheid , Gereon Vogtmeier , Roger Steadman
发明人： Ralf Dorscheid , Gereon Vogtmeier , Roger Steadman
IPC分类号： H01L27/146
CPC分类号： G01T1/2018 , A61B6/032 , A61B6/4233 , A61B6/4291 , A61B6/4411
摘要： The invention relates to a device for the detection and/or transmission of radiation, particularly an X-ray detector 1, that consists of a carrier 10 on which an array of detector modules 20 is arranged. The carrier 10 comprises holes 11 through which a ball at the backside of the detector modules 20 can be inserted in order to fix the modules such that they can still rotate to a certain degree. Due to this freedom, the sensor modules 20 can align themselves during assembly.
摘要翻译：本发明涉及一种用于检测和/或传输辐射的装置，特别是一种X射线检测器1，其由载体10组成，其上布置有检测器模块阵列20。载体10包括孔11，通过该孔11可以插入检测器模块20的后侧的球，以便固定模块，使得它们仍然可以一定程度地旋转。由于这种自由度，传感器模块20可以在组装期间自己对准。

5. 发明授权

US08357944B2 Semiconductor substrate and methods for the production thereof 有权
标题翻译：半导体衬底及其制造方法
公开(公告)号：US08357944B2
公开(公告)日：2013-01-22
申请号：US12063382
申请日：2006-08-10
申请人： Christian Drabe , Alexander Wolter , Roger Steadman , Andreas Bergmann , Gereon Vogtmeier , Ralf Dorscheid
发明人： Christian Drabe , Alexander Wolter , Roger Steadman , Andreas Bergmann , Gereon Vogtmeier , Ralf Dorscheid
IPC分类号： H01L29/18
CPC分类号： H01L21/76898 , H01L23/481 , H01L27/14636 , H01L31/02005 , H01L2223/6622 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and/or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator. The openings are formed with step-free inner walls aligned orthogonally to the front side or tapering continuously in the direction of the rear side.
摘要翻译：本发明涉及半导体衬底及其制造方法。在这方面，本发明的目的是提供可以更经济有效地制造并且可以实现高排列密度以及良好导电性和封闭表面的半导体衬底。根据本发明，导电连接从其前侧通过基板被引导到后侧。导电连接从外部完全包围。绝缘体由填充有材料的开口形成。内壁设置有电介质涂层和/或填充有电绝缘或导电材料。导电连接形成有另外的开口，其填充有导电材料并且布置在绝缘体的内部。开口形成有与前侧正交对准或者在后侧方向连续地逐渐变细的无梯度内壁。

6. 发明申请

US20100295066A1 SEMICONDUCTOR SUBSTRATE AND METHODS FOR THE PRODUCTION THEREOF 有权
标题翻译：半导体基板及其生产方法
公开(公告)号：US20100295066A1
公开(公告)日：2010-11-25
申请号：US12063382
申请日：2006-08-10
申请人： Christian Drabe , Alexander Wolter , Roger Steadman , Andreas Bergmann , Gereon Vogtmeier , Ralf Dorscheid
发明人： Christian Drabe , Alexander Wolter , Roger Steadman , Andreas Bergmann , Gereon Vogtmeier , Ralf Dorscheid
IPC分类号： H01L23/48 , H01L21/70 , H01L31/02 , H01L33/00 , H01L21/768
CPC分类号： H01L21/76898 , H01L23/481 , H01L27/14636 , H01L31/02005 , H01L2223/6622 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and/or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator. The openings are formed with step-free inner walls aligned orthogonally to the front side or tapering continuously in the direction of the rear side.
摘要翻译：本发明涉及半导体衬底及其制造方法。在这方面，本发明的目的是提供可以更经济有效地制造并且可以实现高排列密度以及良好导电性和封闭表面的半导体衬底。根据本发明，导电连接从其前侧通过基板被引导到后侧。导电连接从外部完全包围。绝缘体由填充有材料的开口形成。内壁设置有电介质涂层和/或填充有电绝缘或导电材料。导电连接形成有另外的开口，其填充有导电材料并且布置在绝缘体的内部。开口形成有与前侧正交对准或者在后侧方向连续地逐渐变细的无梯度内壁。

7. 发明申请

US20090323899A1 GRID FOR SELECTIVE ABSORPTION OF ELECTROMAGNETIC RADIATION AND METHOD FOR ITS MANUFACTURE 审中-公开
标题翻译：用于选择性吸收电磁辐射的网格及其制造方法
公开(公告)号：US20090323899A1
公开(公告)日：2009-12-31
申请号：US12067181
申请日：2006-09-11
申请人： Ralf Dorscheid , Gereon Vogtmeier , Roger Steadman , Roy K. Groom , Avner Elgaly
发明人： Ralf Dorscheid , Gereon Vogtmeier , Roger Steadman , Roy K. Groom , Avner Elgaly
IPC分类号： G21K1/02 , A61B6/06
CPC分类号： G21K1/025 , A61B6/032 , A61B6/037 , A61B6/06 , A61B6/4258 , A61B6/4291
摘要： A Grid (1) for selective absorption of electromagnetic radiation (2, 3), as used e.g. in CT or NM imaging, comprises a block of a rigid foam material (4), where the foam material is essentially transparent to the electromagnetic radiation (2, 3), a first set of radiation absorbing lamellae (5), and a second set of radiation absorbing lamellae (6), the first and the second set of lamellae are arranged in the block of foam material so that a radiation transmission direction (T) is defined, the first set of lamellae and the second set of lamellae being arranged on top of each other with respect to the transmission direction (T). Such a grid arrangement is rigid due to the use of a carrier material, can be manufactured precisely and, furthermore, two-dimensional grids can be manufactured without the need to physically intersect the lamellae.
摘要翻译：用于选择性吸收电磁辐射（2,3）的格栅（1）在CT或NM成像中包括刚性泡沫材料块（4），其中泡沫材料对电磁辐射（2,3）基本上是透明的，第一组辐射吸收薄片（5）和第二组的辐射吸收薄片（6），第一和第二组薄片布置在泡沫材料块中，从而定义辐射透射方向（T），第一组薄片和第二组薄片布置在相对于传输方向（T）彼此相邻。由于使用载体材料，这种格栅布置是刚性的，因此可以精确地制造，此外，可以制造二维格栅，而不需要物理地与薄片相交。

8. 发明申请

US20100171196A1 ELECTRICALLY SHIELDED THROUGH-WAFER INTERCONNECT 有权
标题翻译：电气屏蔽通过波形互连
公开(公告)号：US20100171196A1
公开(公告)日：2010-07-08
申请号：US12063774
申请日：2006-08-15
申请人： Roger Steadman , Gereon Vogtmeier , Ralf Dorsheid
发明人： Roger Steadman , Gereon Vogtmeier , Ralf Dorsheid
IPC分类号： H01L23/538
CPC分类号： H01L23/481 , H01L23/552 , H01L2223/6622 , H01L2224/13 , H01L2224/13025
摘要： Through-Wafer Interconnections allow for the usage of cost-effective substrates for detector chips. According to an exemplary embodiment of the present invention, detecting element for application in an examination apparatus may be provided, comprising a wafer with a sensitive region and a coaxial through-wafer interconnect structure. This may reduce the susceptibility of the interconnection by providing an effective shielding.
摘要翻译：通过晶片互连允许为检测器芯片使用经济高效的基板。根据本发明的示例性实施例，可以提供用于检查装置中的检测元件，其包括具有敏感区域的晶片和同轴贯通晶片互连结构。这可以通过提供有效的屏蔽来降低互连的敏感性。

9. 发明申请

US20070176108A1 Semiconductor-based image sensor 审中-公开
标题翻译：基于半导体的图像传感器
公开(公告)号：US20070176108A1
公开(公告)日：2007-08-02
申请号：US10597017
申请日：2005-01-07
申请人： Olaf Such , Josef Lauter , Michael Gnade , Dirk Weiler , Armin Kemna , Gereon Vogtmeier , Roger Steadman
发明人： Olaf Such , Josef Lauter , Michael Gnade , Dirk Weiler , Armin Kemna , Gereon Vogtmeier , Roger Steadman
IPC分类号： G01T1/24 , H01L27/146
CPC分类号： H04N5/32 , H04N5/37455
摘要： A detector arrangement and/or a semiconductor-based image sensor with a plurality of detector elements or image pixels is described, which each have an integrated SD-(Sigma Delta) Modulator (20 to 29) or an integrated SD-A/D-(Sigma Delta Analog/Digital) converter (20 to 30), as well as particularly such a detector arrangement and/or such an image sensor on the basis of a CMOS-semiconductor. Particularly on the basis of the differential version and/or the multi-phase structure of the SD modulator and the SD-A/D converter, a detector arrangement and/or an image sensor with specially high noise robustness, a high dynamic range and a lesser noise can be produced, so that this is particularly suitable for usage in Computer Tomography (CT) apparatus.
摘要翻译：描述了具有多个检测器元件或图像像素的检测器装置和/或基于半导体的图像传感器，每个检测器装置具有集成的SD-（Sigma Delta）调制器（20-29）或集成SD-A / （Sigma Delta Analog / Digital）转换器（20至30），以及特别是基于CMOS半导体的这种检测器装置和/或这种图像传感器。特别是基于SD调制器和SD-A / D转换器的差分版本和/或多相结构，具有特别高的噪声鲁棒性，高动态范围和可以产生较小的噪音，因此特别适用于计算机断层扫描（CT）装置。

10. 发明申请

US20070057192A1 Shielding for an x-ray detector 有权
标题翻译：屏蔽X射线探测器
公开(公告)号：US20070057192A1
公开(公告)日：2007-03-15
申请号：US10596152
申请日：2004-12-02
申请人： Gereon Vogtmeier , Roger Steadman , Klaus Engel , Herfried Wieczorek , Wolfgang Eckenbach
发明人： Gereon Vogtmeier , Roger Steadman , Klaus Engel , Herfried Wieczorek , Wolfgang Eckenbach
IPC分类号： G01T1/20
CPC分类号： G01T1/2018
摘要： The invention relates to an X-ray detector with detector elements (1) arranged in a layer. The detector elements (1) contain a scintillator element (2) for the conversion of X-rays (X) into photons (v), a photodiode (5) for detection of the photons (v), and a processing circuit (4) for the processing of electric signals generated by the photodiode (5). In order to protect the electronics (4) from X-rays a shielding (3) of variable effective thickness (d1, d2) is disposed in front of the electronics (4). This shielding (3) can in particular be L-shaped. By reduction of the effective thickness of the shielding (3) to a necessary minimum the volume of the scintillator unit (2) can be maximized.
摘要翻译：本发明涉及一种具有布置在一层中的检测器元件（1）的X射线检测器。检测器元件（1）包括用于将X射线（X）转换成光子（v）的闪烁体元件（2），用于检测光子（v）的光电二极管（5）和处理电路（4）用于处理由光电二极管（5）产生的电信号。为了保护电子器件（4）免受X射线影响，可变有效厚度（d 1，d 2）的屏蔽层（3）设置在电子器件（4）的前面。这种屏蔽（3）可以特别是L形。通过将屏蔽（3）的有效厚度减小到所需的最小值，可以使闪烁体单元（2）的体积最大化。

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